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1. 发明授权

US06793837B2 Process for material-removing machining of both sides of semiconductor wafers 有权
标题翻译：用于半导体晶片两侧材料去除加工的工艺
公开(公告)号：US06793837B2
公开(公告)日：2004-09-21
申请号：US10174139
申请日：2002-06-18
申请人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler , Gunther Kann
发明人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler , Gunther Kann
IPC分类号： B44C122
CPC分类号： H01L21/02024 , B24B17/10 , B24B37/08
摘要： A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.
摘要翻译：一种方法是在半导体晶片具有前表面和后表面的同时在两面同时进行材料去除加工，半导体晶片位于载体中，该载体通过环形外驱动环和环形内驱动在两个相对旋转的工作盘之间移动，可以通过在每种情况下通过相对于上工作盘的一个路径曲线和相对于下工作盘的一个路径曲线来描述，其中在六个之后的两个路径曲线围绕中心的环路具有仍然是开放的外观，并且在每个点处具有至少与内部驱动环的半径一样大的曲率半径。

2. 发明申请

US20050170749A1 Process for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US20050170749A1
公开(公告)日：2005-08-04
申请号：US11044595
申请日：2005-01-27
申请人： Gunther Kann , Manfred Thurner , Karl-Heinz Wajand , Armin Deser , Markus Schnappauf
发明人： Gunther Kann , Manfred Thurner , Karl-Heinz Wajand , Armin Deser , Markus Schnappauf
IPC分类号： B24B37/04 , B24B49/03 , H01L21/304 , B24B49/00
CPC分类号： B24B37/005 , B24B37/042 , B24B49/03 , Y02P80/30
摘要： The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polishing time, the semiconductor wafer being located in a cutout in a carrier having a defined carrier thickness and being held on a defined geometric path, the semiconductor wafer having a starting thickness prior to polishing and a final thickness after polishing. The polishing time for the polishing run is calculated from data which include the starting thickness of the semiconductor wafer and the carrier thickness as well as the starting thickness and final thickness and the flatness of a semiconductor wafer which was polished during a polishing run preceding the present polishing run.
摘要翻译：本发明涉及一种通过在研磨时间内抛光时抛光半导体晶片的前表面和背面之间的研磨液在抛光时间内研磨半导体晶片的方法，半导体晶片位于在具有确定的载体厚度并保持在限定的几何路径上的载体的切口中，半导体晶片在抛光之前具有起始厚度和抛光后的最终厚度。用于研磨运行的抛光时间由包括半导体晶片的起始厚度和载体厚度的数据以及在本发明之前的抛光运行期间抛光的半导体晶片的起始厚度和最终厚度以及平坦度进行计算抛光运行。

3. 发明授权

US06997776B2 Process for producing a semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US06997776B2
公开(公告)日：2006-02-14
申请号：US11044595
申请日：2005-01-27
申请人： Gunther Kann , Manfred Thurner , Karl-Heinz Wajand , Armin Deser , Markus Schnappauf
发明人： Gunther Kann , Manfred Thurner , Karl-Heinz Wajand , Armin Deser , Markus Schnappauf
IPC分类号： B24B1/00
CPC分类号： B24B37/005 , B24B37/042 , B24B49/03 , Y02P80/30
摘要： The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polishing time, the semiconductor wafer being located in a cutout in a carrier having a defined carrier thickness and being held on a defined geometric path, the semiconductor wafer having a starting thickness prior to polishing and a final thickness after polishing. The polishing time for the polishing run is calculated from data which include the starting thickness of the semiconductor wafer and the carrier thickness as well as the starting thickness and final thickness and the flatness of a semiconductor wafer which was polished during a polishing run preceding the present polishing run.
摘要翻译：本发明涉及一种通过在研磨时间内抛光时抛光半导体晶片的前表面和背面之间的研磨液在抛光时间内研磨半导体晶片的方法，半导体晶片位于在具有确定的载体厚度并保持在限定的几何路径上的载体的切口中，半导体晶片在抛光之前具有起始厚度和抛光后的最终厚度。用于研磨运行的抛光时间由包括半导体晶片的起始厚度和载体厚度的数据以及在本发明之前的抛光运行期间抛光的半导体晶片的起始厚度和最终厚度以及平坦度进行计算抛光运行。

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