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1. 发明授权

US07868424B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07868424B2
公开(公告)日：2011-01-11
申请号：US11658227
申请日：2005-07-07
申请人： Godefridus Adrianus Maria Hurkx , Prabhat Agarwal , Erwin Hijzen , Raymond Josephus Engelbart Hueting
发明人： Godefridus Adrianus Maria Hurkx , Prabhat Agarwal , Erwin Hijzen , Raymond Josephus Engelbart Hueting
IPC分类号： H01L21/02
CPC分类号： H01L29/0821 , B82Y10/00 , H01L29/06 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/08 , H01L29/423 , H01L29/42304 , H01L29/66242 , H01L29/737 , H01L29/7378
摘要： The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (12) comprising a vertical bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type and the first conductivity type, wherein the collector region (3) comprises a first sub-region (3A) bordering the base region (2) and a second sub-region (3B) bordering the first sub-region (3A) which has a lower doping concentration than the second sub-region (3B), and the transistor is provided with a gate electrode (5) which laterally borders the first sub-region (3A) and by means of which the first sub-region (3A) may be depleted. According to the invention the collector region (3) borders the surface of the semiconductor body (12), while the emitter region (1) is recessed in the semiconductor body (12), and the collector region (3) forms part of a mesa structure (6) formed at the surface of the semiconductor body (12). Such a device (10) has very favorable properties at high frequencies and high voltages and, moreover, is easy to manufacture. In a preferred embodiment the collector (3) comprises a nanowire (30) forming the mesa structure (6).
摘要翻译：本发明涉及一种具有衬底（11）和半导体本体（12）的半导体器件（10），该半导体器件包括分别具有发射极区，基极区和集电极区（1,2,3）的垂直双极晶体管，第一导电类型，与第一导电类型和第一导电类型相反的第二导电类型，其中集电极区域（3）包括与基极区域（2）接壤的第一子区域（3A）与第二子区域（3A）接合的第一子区域（3A）的区域（3B），其具有比第二子区域（3B）低的掺杂浓度，并且晶体管设置有与第一子区域横向相邻的栅电极（5） 3A），并且借助于此可以使第一子区域（3A）耗尽。根据本发明，集电极区域（3）与半导体本体（12）的表面相接触，而发射极区域（1）凹入半导体本体（12）中，并且集电极区域（3）形成台面的一部分结构（6）形成在半导体本体（12）的表面。这种装置（10）在高频和高电压下具有非常有利的特性，而且易于制造。在优选实施例中，收集器（3）包括形成台面结构（6）的纳米线（30）。

2. 发明申请

US20080315361A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080315361A1
公开(公告)日：2008-12-25
申请号：US11658227
申请日：2005-07-07
申请人： Godefridus Adrianus Maria Hurkx , Prabhat Agarwal , Erwin Hijzen , Raymond Josephus Engelbart Hueting
发明人： Godefridus Adrianus Maria Hurkx , Prabhat Agarwal , Erwin Hijzen , Raymond Josephus Engelbart Hueting
IPC分类号： H01L27/00 , H01L21/331
CPC分类号： H01L29/0821 , B82Y10/00 , H01L29/06 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/08 , H01L29/423 , H01L29/42304 , H01L29/66242 , H01L29/737 , H01L29/7378
摘要： The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (12) comprising a vertical bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type and the first conductivity type, wherein the collector region (3) comprises a first sub-region (3A) bordering the base region (2) and a second sub-region (3B) bordering the first sub-region (3A) which has a lower doping concentration than the second sub-region (3B), and the transistor is provided with a gate electrode (5) which laterally borders the first sub-region (3A) and by means of which the first sub-region (3A) may be depleted. According to the invention the collector region (3) borders the surface of the semiconductor body (12), while the emitter region (1) is recessed in the semiconductor body (12), and the collector region (3) forms part of a mesa structure (6) formed at the surface of the semiconductor body (12). Such a device (10) has very favorable properties at high frequencies and high voltages and, moreover, is easy to manufacture. In a preferred embodiment the collector (3) comprises a nanowire (30) forming the mesa structure (6).
摘要翻译：本发明涉及一种具有衬底（11）和半导体本体（12）的半导体器件（10），该半导体器件包括分别具有发射极区，基极区和集电极区（1,2,3）的垂直双极晶体管，第一导电类型，与第一导电类型和第一导电类型相反的第二导电类型，其中集电极区域（3）包括与基极区域（2）接壤的第一子区域（3A）与第二子区域（3A）接合的第一子区域（3A）的区域（3B），其具有比第二子区域（3B）低的掺杂浓度，并且晶体管设置有与第一子区域横向相邻的栅电极（5） 3A），并且借助于此可以使第一子区域（3A）耗尽。根据本发明，集电极区域（3）与半导体本体（12）的表面相接触，而发射极区域（1）凹入半导体本体（12）中，并且集电极区域（3）形成台面的一部分结构（6）形成在半导体本体（12）的表面。这种装置（10）在高频和高电压下具有非常有利的特性，而且易于制造。在优选实施例中，收集器（3）包括形成台面结构（6）的纳米线（30）。

3. 发明授权

US07109567B2 Semiconductor device and method of manufacturing such device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07109567B2
公开(公告)日：2006-09-19
申请号：US10495943
申请日：2002-11-21
申请人： Raymond Josephus Engelbart Hueting , Jan Willem Slotboom , Leon Cornelis Maria Van Den Oever
发明人： Raymond Josephus Engelbart Hueting , Jan Willem Slotboom , Leon Cornelis Maria Van Den Oever
IPC分类号： H01L27/082 , H01L21/8238
CPC分类号： H01L29/47 , H01L29/41708 , H01L29/42304 , H01L29/7378
摘要： The invention relates to a semiconductor device with a heterojunction bipolar, in particular npn, transistor with an emitter region (1), a base region (2), and a collector region (3), which are provided with respectively a first, a second, and a third connection conductor (4, 5, 6), while the bandgap of the base region (2) is lower than that of the collector region (3) or of the emitter region (1), for example owing to the use of a silicon-germanium alloy instead of pure silicon. Such a device is very fast, but its transistor shows a relatively low BVceo. In a device according to the invention, the emitter region (1) or the base region (2) comprises a sub-region (1B, 2B) with a reduced doping concentration, which sub-region (1B, 2B) is provided with a further connection conductor (4B, 5B) which forms a Schottky junction with the sub-region (1B, 2B). Such a device results in a transistor with a particularly high cut-off frequency fT but with no or hardly any reduction of the BVceo. In a preferred embodiment, the emitter region (1) and its sub-region (1B), or the base region (2) and its sub-region (2B) both border the surface of the semiconductor body (10) and the further connection conductor (4B, 5B) forms part of the first or the second connection conductor (4, 5), as applicable. The invention also comprises a method of manufacturing a device according to the invention.
摘要翻译：本发明涉及具有异质结双极的半导体器件，特别是具有发射极区域（1），基极区域（2）和集电极区域（3）的npn晶体管，它们分别设置有第一，第二和第三连接导体（4,5,6），而基极区域（2）的带隙比集电极区域（3）或发射极区域（1）的带隙低，例如由于使用的硅 - 锗合金代替纯硅。这样的器件非常快，但其晶体管显示出相对较低的BVceo。在根据本发明的装置中，发射极区域（1）或基极区域（2）包括具有降低的掺杂浓度的子区域（1B，2B），该子区域（1B，2B）设置有与子区域（1B，2B）形成肖特基结的另外的连接导体（4B，5B）。这种器件导致具有特别高的截止频率fT的晶体管，但是没有或几乎不减少BVceo。在优选实施例中，发射极区域（1）及其子区域（1B）或基极区域（2）及其子区域（2B）都与半导体本体（10）的表面和如果适用，另外的连接导体（4B，5B）形成第一或第二连接导体（4,5）的一部分。本发明还包括一种制造根据本发明的装置的方法。

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