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    • 2. 发明授权
    • Apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing sorbent-based fluid storage and dispensing system for reagent delivery
    • US06204180B1
    • 2001-03-20
    • US09002278
    • 1997-12-31
    • Glenn M. TomPeter S. KirlinJames V. McManus
    • Glenn M. TomPeter S. KirlinJames V. McManus
    • B32B1700
    • F17C11/00F17C2205/0338F17C2205/0391F17C2270/0518
    • A process for fabricating an electronic device structure on or in a substrate. A storage and dispensing vessel is provided, containing a solid-phase physical sorbent medium having physically adsorbed thereon a fluid for fabrication of the electronic device structure, e.g., a source fluid for a material constituent of the electronic device structure, or a reagent such as an etchant or mask material which is utilized in the fabrication of the electronic device structure but does not compose or form a material constituent of the electronic device structure. In the process, the source fluid is desorbed from the physical sorbent medium and dispensing source fluid from the storage and dispensing vessel, and contacted with the substrate, under conditions effective to utilize the material constituent on or in the substrate. The contacting step of the process may include process steps such as ion implantation; epitaxial growth; plasma etching; reactive ion etching; metallization; physical vapor deposition; chemical vapor deposition; cleaning; doping; etc. The process of the invention may be employed to fabricate electronic device structures such as transistors; capacitors; resistors; memory cells; dielectric material; buried doped substrate regions; metallization layers; channel stop layers; source layers; gate layers; drain layers; oxide layers; field emitter elements; passivation layers; interconnects; polycides; electrodes; trench structures; ion implanted material layers; via plugs; precursor structures for the foregoing electronic device structures; and device assemblies comprising more than one of the foregoing electronic device structures. The electronic device structure fabricated by such process may in turn may be employed as a component of an electronic product such as a telecommunications device or electronic appliance.
    • 3. 发明授权
    • Process and composition for purifying semiconductor process gases to
remove Lewis acid and oxidant impurities therefrom
    • 用于净化半导体工艺气体以从其中除去路易斯酸和氧化剂杂质的方法和组合物
    • US5385689A
    • 1995-01-31
    • US84414
    • 1993-06-29
    • Glenn M. TomJames V. McManus
    • Glenn M. TomJames V. McManus
    • B01D53/02B01D53/28B01D53/40B01D53/46B01J20/02B01J20/04B01J20/26E02F9/22F15B11/05F15B11/16F15B21/08C09K3/00
    • E02F9/2235B01D53/28B01D53/40B01D53/46B01J20/02B01J20/28057B01J20/28078B01J20/321B01J20/3236E02F9/2282E02F9/2296
    • Scavenger compositions useful for purifying process gas streams, such as process gas streams, such as hydrogen, nitrogen, noble gases, diborane, and hydride gases from Groups IVA-VIA of the Periodic Table, such as arsine, phosphine, silane, germane, hydrogen selenide, and hydrogen telluride, and mixtures thereof, to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, such scavenger comprising a porous, high surface area inert support having thereon an active scavenging species, formed by the deposition on the support of a Group IA metal and pyrolysis thereof at a selected elevated temperature on said support. In another aspect, the present invention relates to a method of making a scavenger useful for purifying process gas streams, to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, and a process for purifying process gas streams to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, such process comprising contacting the impurity-containing process gas stream with a scavenger of the general type described above. In a further aspect, the invention relates to a method for using scavengers of the general type described above as back-diffusion scrubbers to protect the manufacturing process or gas supply system from inadvertent introduction of impurities, such method comprising contacting the impurity-containing process gas stream with a scavenger of the general type described above and providing in the scavenger bed one or more endpoint detectors so that back-diffusion events are observed.
    • 用于净化工艺气流的清除剂组合物,例如来自元素周期表IVA-VIA族的工艺气流,例如氢气,氮气,惰性气体,乙硼烷和氢化物气体,例如胂,膦,硅烷,锗烷,氢 硒化物和碲化氢及其混合物,以从其中除去水,氧和其它氧化剂和路易斯酸杂质,这种清除剂包括其上具有活性清除物质的多孔高表面积惰性载体,其通过沉积在载体上而形成 的IA族金属并在所述载体上在选定的升高温度下进行热解。 另一方面,本发明涉及一种制备清除剂的方法,其用于净化工艺气流,从中除去水,氧和其它氧化剂和路易斯酸杂质,以及净化工艺气流以除去水,氧气的方法 ,和其它氧化剂和路易斯酸杂质,这种方法包括使含杂质的工艺气体流与上述一般类型的清除剂接触。 在另一方面,本发明涉及一种使用上述一般类型的清除剂作为反向扩散洗涤器的方法,用于保护制造过程或气体供应系统不会意外引入杂质,这种方法包括使含杂质的工艺气体 流与上述一般类型的清除剂并在清除床中提供一个或多个端点检测器,从而观察到反向扩散事件。
    • 4. 发明授权
    • Laser system utilizing sorbent-based gas storage and delivery system
    • 基于吸附剂的气体储存和输送系统的激光系统
    • US6125131A
    • 2000-09-26
    • US80895
    • 1998-05-18
    • George R. BrandesGlenn M. TomJames V. McManus
    • George R. BrandesGlenn M. TomJames V. McManus
    • B01D53/04B01J4/02B01J20/18B01J20/20F17C11/00H01S3/20
    • F17C11/007B01D53/0407B01J20/20F17C11/00B01D2253/308B01D2259/4525F17C2205/0338F17C2205/0391Y02C10/08Y02C20/10Y10S95/902
    • A laser system utilizing a fluid as the excitatory medium for stimulated light emission, wherein the fluid is supplied from a sorbent-based fluid storage and dispensing system coupled in fluid-supplying relationship with the laser apparatus. The laser may be an excimer laser utilizing as the laser working fluid a rare gas halide compound such as fluorides and/or chlorides of krypton, xenon and argon, as well as fluorine and/or chlorine per se. The laser system may alternatively be a far infrared gas laser utilizing a gas such as CO.sub.2, N.sub.2 O, CD.sub.3 OD, CH.sub.3 OD, CH.sub.3 OH, CH.sub.3 NH.sub.2, C.sub.2 H.sub.2 F.sub.2, HCOOH, CD.sub.3 I, CH.sub.3 F, and C.sup.13 H.sub.3 F. Laser systems of the present invention may be utilized in applications such as materials processing, measurement and inspection, reading, writing, and recording of information, holography, communications, displays, spectroscopy and analytical chemistry, remote sensing, surveying, marking, and alignment, surgical and medical applications, plasma diagnostics, laser weaponry, laser-induced nuclear fusion, isotope enrichment and atomic physics.
    • 一种利用流体作为刺激光发射的兴奋剂介质的激光系统,其中所述流体从与所述激光装置以流体供应关系耦合的基于吸附剂的流体储存和分配系统供应。 激光可以是激光工作流体中使用诸如氟化物和/或氪,氙和氩的氟化物和/或氯化物的稀有卤化物化合物以及氟和/或氯本身的准分子激光。 激光系统可以替代地是使用诸如CO 2,N 2 O,CD 3 OD,CH 3 OD,CH 3 OH,CH 3 NH 2,C 2 H 2 F 2,HCOOH,CD 3 I,CH 3 F和C 13 H 3 F的气体的远红外气体激光。 本发明的激光系统可以用于诸如材料加工,测量和检查,读取,写入和记录信息,全息术,通信,显示,光谱学和分析化学,遥感,测量,标记和对准等应用中。 外科和医疗应用,等离子体诊断,激光武器,激光诱导核聚变,同位素浓缩和原子物理学。
    • 6. 发明授权
    • Process for purifying semiconductor process gases to remove lewis acid
and oxidant impurities therefrom
    • 净化半导体工艺气体以从其中除去路易斯酸和氧化剂杂质的方法
    • US5531971A
    • 1996-07-02
    • US322315
    • 1994-10-13
    • Glenn M. TomJames V. McManus
    • Glenn M. TomJames V. McManus
    • B01D53/02B01D53/28B01D53/40B01D53/46B01J20/02B01J20/04B01J20/26E02F9/22F15B11/05F15B11/16F15B21/08B01D53/04
    • E02F9/2235B01D53/28B01D53/40B01D53/46B01J20/02B01J20/28057B01J20/28078B01J20/321B01J20/3236E02F9/2282E02F9/2296
    • Scavenger compositions useful for purifying process gas streams, such as process gas streams, such as hydrogen, nitrogen, noble gases, diborane, and hydride gases from Groups IVA-VIA of the Periodic Table, such as arsine, phosphine, silane, germane, hydrogen selenide, and hydrogen telluride, and mixtures thereof, to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, such scavenger comprising a porous, high surface area inert support having thereon an active scavenging species, formed by the deposition on the support of a Group IA metal and pyrolysis thereof at a selected elevated temperature on said support. In another aspect, the present invention relates to a method of making a scavenger useful for purifying process gas streams, to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, and a process for purifying process gas streams to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, such process comprising contacting the impurity-containing process gas stream with a scavenger of the general type described above. In a further aspect, the invention relates to a method for using scavengers of the general type described above as back-diffusion scrubbers to protect the manufacturing process or gas supply system from inadvertent introduction of impurities, such method comprising contacting the impurity-containing process gas stream with a scavenger of the general type described above and providing in the scavenger bed one or more endpoint detectors so that back-diffusion events are observed.
    • 用于净化工艺气流的清除剂组合物,例如来自元素周期表IVA-VIA族的工艺气流,例如氢气,氮气,惰性气体,乙硼烷和氢化物气体,例如胂,膦,硅烷,锗烷,氢 硒化物和碲化氢及其混合物,以从其中除去水,氧和其它氧化剂和路易斯酸杂质,这种清除剂包括其上具有活性清除物质的多孔高表面积惰性载体,其通过沉积在载体上而形成 的IA族金属并在所述载体上在选定的升高温度下进行热解。 另一方面,本发明涉及一种制备清除剂的方法,其用于净化工艺气流,从中除去水,氧和其它氧化剂和路易斯酸杂质,以及净化工艺气流以除去水,氧气的方法 ,和其它氧化剂和路易斯酸杂质,这种方法包括使含杂质的工艺气体流与上述一般类型的清除剂接触。 在另一方面,本发明涉及一种使用上述一般类型的清除剂作为反向扩散洗涤器的方法,用于保护制造过程或气体供应系统不会意外引入杂质,这种方法包括使含杂质的工艺气体 流与上述一般类型的清除剂并在清除床中提供一个或多个端点检测器,从而观察到反向扩散事件。