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1. 发明授权

US07795160B2 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US07795160B2
公开(公告)日：2010-09-14
申请号：US11490875
申请日：2006-07-21
申请人： Chang-gong Wang , Eric J. Shero , Glen Wilk , Jan Willem Maes
发明人： Chang-gong Wang , Eric J. Shero , Glen Wilk , Jan Willem Maes
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/401 , C23C16/405 , C23C16/45531 , C23C16/45542 , H01L21/28194 , H01L21/31612 , H01L21/31645
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与金属源化学品，硅源化学品和氧化剂的交替和顺序的气相脉冲接触。在优选的实施方案中，使用烷基酰胺金属化合物和卤化硅化合物。根据优选实施方案的方法可以用于在包含高纵横比特征（例如，通孔和/或沟槽）的衬底表面上形成具有基本上均匀的薄膜覆盖率的硅酸铪硅酸盐膜和硅酸锆膜。

2. 发明授权

US08268409B2 Plasma-enhanced deposition of metal carbide films 有权
标题翻译：金属碳化物膜的等离子体增强沉积
公开(公告)号：US08268409B2
公开(公告)日：2012-09-18
申请号：US11873250
申请日：2007-10-16
申请人： Kai-Erik Elers , Glen Wilk , Steven Marcus
发明人： Kai-Erik Elers , Glen Wilk , Steven Marcus
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/32 , C23C16/45527 , C23C16/45542 , C23C16/515
摘要： Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.
摘要翻译：提供了形成金属碳化物膜的方法。在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物的气相脉冲和一种或多种等离子体激发的物质含碳化合物。在其他实施例中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括使反应空间中的底物与金属化合物和一种或多种等离子体激发的含碳化合物同时接触。将底物进一步暴露于还原剂。还原剂除去杂质，包括卤素原子和/或氧原子。

3. 发明申请

US20110256735A1 ALD OF METAL SILICATE FILMS 有权
标题翻译：金属硅酸盐膜
公开(公告)号：US20110256735A1
公开(公告)日：2011-10-20
申请号：US13175204
申请日：2011-07-01
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/316
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

4. 发明申请

US20100022099A1 METHOD OF FORMING NON-CONFORMAL LAYERS 有权
标题翻译：形成非一致层的方法
公开(公告)号：US20100022099A1
公开(公告)日：2010-01-28
申请号：US12573008
申请日：2009-10-02
申请人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
发明人： Sebastian E. Van Nooten , Jan Willem Maes , Steven Marcus , Glen Wilk , Petri Räisänen , Kai-Erik Elers
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

5. 发明申请

US20090280267A1 PLASMA-ENHANCED PULSED DEPOSITION OF METAL CARBIDE FILMS 有权
标题翻译：金属碳化物膜的等离子体增强脉冲沉积
公开(公告)号：US20090280267A1
公开(公告)日：2009-11-12
申请号：US12116894
申请日：2008-05-07
申请人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
发明人： Dong Li , Steven Marcus , Glen Wilk , Brennan Milligan
IPC分类号： C23C16/44 , C23C26/00
CPC分类号： C23C16/32 , C23C16/4554 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
摘要翻译：提供了形成金属碳化物膜的方法。在一些实施例中，将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。过渡金属物质与碳物质反应以沉积金属碳化物膜。底物与过渡金属物质同时暴露于碳物质，或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。在一些实施方案中，碳物质和过渡金属物质形成相同前体化合物的一部分，例如金属有机化合物。

6. 发明授权

US07972977B2 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US07972977B2
公开(公告)日：2011-07-05
申请号：US11868333
申请日：2007-10-05
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/31
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

7. 发明申请

US20070026540A1 Method of forming non-conformal layers 有权
标题翻译：形成非保形层的方法
公开(公告)号：US20070026540A1
公开(公告)日：2007-02-01
申请号：US11375588
申请日：2006-03-13
申请人： Sebastian Nooten , Jan Maes , Steven Marcus , Glen Wilk , Petri Raisanen , Kai-Erik Elers
发明人： Sebastian Nooten , Jan Maes , Steven Marcus , Glen Wilk , Petri Raisanen , Kai-Erik Elers
IPC分类号： H01L21/00 , B05C11/00 , C23C16/00 , H01L21/31
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/403 , C23C16/448 , C23C16/45519 , C23C16/45525 , C23C16/45542 , C23C16/45565 , C23C16/50 , C23C16/5096 , C23C16/52 , H01J37/3244 , H01J37/32935 , H01L21/02178 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3162 , H01L29/66181
摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface
摘要翻译：在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化以耗尽效应模式运行。因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

8. 发明申请

US20050112827A1 High permittivity silicate gate dielectric 有权
标题翻译：高介电常数硅酸盐栅极电介质
公开(公告)号：US20050112827A1
公开(公告)日：2005-05-26
申请号：US11015604
申请日：2004-12-17
申请人： John Anthony , Scott Summerfelt , Robert Wallace , Glen Wilk
发明人： John Anthony , Scott Summerfelt , Robert Wallace , Glen Wilk
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/336 , H01L21/4763 , H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31691 , H01L21/02181 , H01L21/02323 , H01L21/0234 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A metal silicate gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Silicate layer 36 may be, e.g., hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.
摘要翻译：本文公开了包括高介电常数硅酸盐栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成金属硅酸盐栅极电介质层36，之后是导电栅极38。硅酸盐层36可以是例如硅酸铪，使得栅极电介质的介电常数显着高于二氧化硅的介电常数。然而，硅酸盐栅极电介质也可以被设计成具有二氧化硅的优点。高击穿，低界面状态密度和高稳定性。本发明包括沉积无定形和多晶硅酸盐层以及梯度组合硅酸盐层的方法。

9. 发明授权

US06040230A Method of forming a nano-rugged silicon-containing layer 失效
标题翻译：形成纳米坚固的含硅层的方法
公开(公告)号：US06040230A
公开(公告)日：2000-03-21
申请号：US39075
申请日：1998-03-13
申请人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
发明人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/82
摘要： An embodiment of the instant invention is a method of forming a nano-rugged silicon-containing layer, the method comprising the steps of: providing a first silicon-containing layer (steps 202 or 802); providing a patterning layer over the first silicon-containing layer (steps 204 or 804); the patterning layer comprised of an amorphous substance; providing a second silicon-containing layer (steps 206 or 808) over the patterning layer; and wherein the patterning layer creates a nano-rugged texture in the second silicon-containing layer. Preferably, the first and second silicon-containing layers are comprised of polycrystalline silicon. In an alternative embodiment, the patterning layer is comprised of a material which has small holes such that the step of providing the second silicon-containing layer utilizes the first silicon-containing layer as a seed layer through the small holes so as to form the second silicon-containing layer. In another alternative embodiment, the second silicon-containing layer is comprised of a plurality of islands of the silicon-containing material separated by voids in the material. Preferably, the patterning layer is comprised of SiO.sub.2.
摘要翻译：本发明的一个实施方案是一种形成纳米坚固的含硅层的方法，所述方法包括以下步骤：提供第一含硅层（步骤202或802）; 在第一含硅层上提供图形层（步骤204或804）; 所述图案层由无定形物质构成; 在所述图案化层上提供第二含硅层（步骤206或808）; 并且其中所述图案化层在所述第二含硅层中产生纳米坚固纹理。优选地，第一和第二含硅层由多晶硅组成。在替代实施例中，图案化层由具有小孔的材料构成，使得提供第二含硅层的步骤通过该小孔利用第一含硅层作为种子层，从而形成第二含硅层含硅层。在另一个替代实施例中，第二含硅层由多个岛状的含硅材料构成，该岛由材料中的空隙分开。优选地，图案化层由SiO 2组成。

10. 发明授权

US08563444B2 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US08563444B2
公开(公告)日：2013-10-22
申请号：US13175204
申请日：2011-07-01
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/31
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

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