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1. 发明授权

US5700602A Method and apparatus for precision determination of phase-shift in a phase-shifted reticle 失效
标题翻译：用于精确确定相移掩模版中相移的方法和装置
公开(公告)号：US5700602A
公开(公告)日：1997-12-23
申请号：US538354
申请日：1995-10-30
申请人： Giang T. Dao , Nelson N. Tam , Gang Liu , Jeffrey N. Farnsworth
发明人： Giang T. Dao , Nelson N. Tam , Gang Liu , Jeffrey N. Farnsworth
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A metrology pattern on a reticle comprising a phase-shifted feature and an additional phase-shifted feature and/or non phase-shifted feature is disclosed. The metrology pattern can be used to determine the target thickness for achieving 180.degree. phase difference, i.e., zero phase error on a phase-shifted reticle. A test reticle having several such metrology patterns, with several different phase-shifter thickness differences is used to produce a CD versus defocus data for each of the phase-shifter thickness differences by performing an exposure matrix or series of aerial images. The data can be used to determine a target thickness for zero phase error. The data can also be used to determine a correlation between focal shift, phase error, and shifter thickness. The metrology pattern can be placed on reticles used for the fabrication of semiconductor devices, for example, so that an exposure matrix can be performed, to determine any focal shift, which can then be related to phase error.
摘要翻译：公开了包括相移特征和附加相移特征和/或非相移特征的掩模版上的度量图案。可以使用计量模式来确定实现180°相位差的目标厚度，即在相移掩模版上的零相位误差。具有几种这样的测量图案的测试掩模版具有几种不同的移相器厚度差异，用于通过执行曝光矩阵或一系列的空间图像来产生每个移相器厚度差的CD对散焦数据。该数据可用于确定零相位误差的目标厚度。该数据还可用于确定焦点偏移，相位误差和移位器厚度之间的相关性。例如，可以将计量图案放置在用于制造半导体器件的掩模版上，使得可以执行曝光矩阵，以确定任何可能与相位误差相关的焦点偏移。

2. 发明授权

US5384219A Reticle with structurally identical inverted phase-shifted features 失效
标题翻译：具有结构相同的反相移相特征的标线片
公开(公告)号：US5384219A
公开(公告)日：1995-01-24
申请号：US114953
申请日：1993-08-31
申请人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
发明人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and method of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase. Also, since each pattern is structurally identical, any focal shift due to phase error is in the same direction for all patterns, so that an acceptable depth of field is maintained for a substrate exposed with the reticle.
摘要翻译：具有彼此相邻的图案的相移掩模版具有用于特征和相移元件的反相，以及制造掩模版的方法。每个图案和反相图案在相移方向上在结构上是相同的，因此对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向。在优选实施例中，结构相同的相反的掩模版用于形成紧密间隔的接触或通孔的阵列。对于标线板上的第一个图案，该特征将为0°相位，该特征周围的相移边缘将为180°相位。围绕第一图案的所有图案都具有0°相位的相移边界和180°相位的特征。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是180°异相的。此外，由于每个图案在结构上相同，所以对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向，因此对于用掩模版曝光的基底，可以保持可接受的景深。

3. 发明授权

US5300379A Method of fabrication of inverted phase-shifted reticle 失效
标题翻译：倒相相位掩模版的制作方法
公开(公告)号：US5300379A
公开(公告)日：1994-04-05
申请号：US933341
申请日：1992-08-21
申请人： Giang T. Dao , Eng T. Gaw , Nelson N. Tam , Ruben A. Rodriquez
发明人： Giang T. Dao , Eng T. Gaw , Nelson N. Tam , Ruben A. Rodriquez
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.
摘要翻译：公开了一种具有彼此邻近的图案的相移掩模版，具有用于特征和相移元件的反相，以及制造掩模版的方法。在优选实施例中，反相的掩模版用于形成紧密间隔的接触或通孔的阵列。对于刻线上的第一个图案，该特征将为0度相位，并且该特征周围的相移边缘将为180度相位。围绕第一图案的所有图案都具有0度相位和180度相位特征的移相轮缘。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是相位相差180度。

4. 发明授权

US5348826A Reticle with structurally identical inverted phase-shifted features 失效
标题翻译：具有结构相同的反相移相特征的标线片
公开(公告)号：US5348826A
公开(公告)日：1994-09-20
申请号：US12564
申请日：1993-02-02
申请人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
发明人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase. Also, since each pattern is structurally identical, any focal shift due to phase error is in the same direction for all patterns, so that an acceptable depth of field is maintained for a substrate exposed with the reticle.
摘要翻译：具有彼此相邻的图案的相移掩模版具有用于特征和相移元件的反相，以及制造掩模版的方法。每个图案和反相图案在相移方向上在结构上是相同的，因此对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向。在优选实施例中，结构相同的相反的掩模版用于形成紧密间隔的接触或通孔的阵列。对于标线板上的第一个图案，该特征将为0°相位，该特征周围的相移边缘将为180°相位。围绕第一图案的所有图案都具有0°相位的相移边界和180°相位的特征。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是180°异相的。此外，由于每个图案在结构上相同，所以对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向，因此对于用掩模版曝光的基底，可以保持可接受的景深。

5. 发明授权

US5789118A Method and apparatus for precision determination of phase-shift in a phase-shifted reticle 失效
标题翻译：用于精确确定相移掩模版中相移的方法和装置
公开(公告)号：US5789118A
公开(公告)日：1998-08-04
申请号：US764667
申请日：1996-12-11
申请人： Gang Liu , Giang T. Dao , Alan M. Snyder
发明人： Gang Liu , Giang T. Dao , Alan M. Snyder
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： An attenuating phase metrology cell on a reticle comprising an attenuating feature and a binary feature. The metrology cell is used to determine amount of focal shift associated with the attenuating phase-shifting material. A dimension of an image of the attenuating feature is measured at a number of focal distances from the reticle. Thereafter a first relationship between the measurements of the attenuating feature and the focal distance is determined. A dimension of an aerial image of the binary feature is also measured at a number of focal distances from the reticle. The relationship between the measurements of the binary feature and focal distance is determined. An amount of focal shift is then determined based upon the first and second relationships. The attenuating metrology pattern can thus be included on an attenuating phase-shifting reticle, such that the focal shift of the attenuating phase-shifting reticle can be determined.
摘要翻译：包括衰减特征和二进制特征的掩模版上的衰减相位测量单元。测量单元用于确定与衰减相移材料相关的焦点位移量。衰减特征的图像的尺寸在距离掩模版的多个焦距处被测量。此后确定衰减特征的测量与焦距之间的第一关系。在距掩模版的多个焦距处也测量二进制特征的空间图像的尺寸。确定二进制特征和焦距的测量之间的关系。然后基于第一和第二关系确定焦点偏移量。因此衰减计量模式可以被包括在衰减的相移掩模版上，使得可以确定衰减相移掩模版的焦点偏移。

6. 发明授权

US5618643A Embedded phase shifting mask with improved relative attenuated film transmission 失效
标题翻译：嵌入式相移掩模，具有改进的相对衰减薄膜传输
公开(公告)号：US5618643A
公开(公告)日：1997-04-08
申请号：US573526
申请日：1995-12-15
申请人： Giang T. Dao , Gang Liu
发明人： Giang T. Dao , Gang Liu
IPC分类号： G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A method and apparatus for fabricating a mask for use in patterning a radiation sensitive layer in a lithographic printer. An embedded phase shifting layer is disposed over a substantially transparent base layer such that attenuated regions of the mask are phase shifted approximately 160 to 200 degrees relative to open features in the mask. In accordance with the present invention, radiation transmission is reduced through the open feature regions of the mask. In one embodiment, a thin radiation transmission reducing layer is deposited over the open feature regions of the mask. In another embodiment, the open feature regions of the mask are roughened to reduce radiation transmission. In yet another embodiment, ion implantation is performed in the open feature regions of the mask to reduce transmission. With the reduced transmission of radiation through the open feature regions of the present mask, high resolution lithography employing short wavelength radiation is realized.
摘要翻译：一种用于制造用于图案化平版印刷机中的辐射敏感层的掩模的方法和装置。嵌入式相移层设置在基本上透明的基底层上，使得掩模的衰减区域相对于掩模中的开放特征相移大约160至200度。根据本发明，辐射透射通过掩模的开放特征区域减小。在一个实施例中，薄的辐射透射降低层沉积在掩模的开放特征区域上。在另一个实施例中，掩模的开放特征区域被粗糙化以减少辐射透射。在另一个实施例中，在掩模的开放特征区域中执行离子注入以减少透射。随着辐射通过本掩模的开放特征区域的减小的透射，实现了采用短波长辐射的高分辨率光刻。

7. 发明授权

US06763608B2 Method of transporting a reticle 失效
标题翻译：运输掩模版的方法
公开(公告)号：US06763608B2
公开(公告)日：2004-07-20
申请号：US10256357
申请日：2002-09-26
申请人： Giang T. Dao , Ronald J. Kuse
发明人： Giang T. Dao , Ronald J. Kuse
IPC分类号： F26B700
CPC分类号： H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916 , G03F7/70925 , G03F7/70983 , H01L21/67366 , H01L21/67393
摘要： A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.
摘要翻译：公开了传送掩模版的方法。将掩模版放置在具有电离器的掩模版载体中。此外，掩模版可以附着防护薄膜组件。防护薄膜组件由防护薄膜组件框架和在防护薄膜框架上延伸的防护薄膜组成。防护薄膜框架包括在吸收材料内。

8. 发明授权

US5635316A Layout methodology, mask set, and patterning method for phase-shifting lithography 失效
公开(公告)号：US5635316A
公开(公告)日：1997-06-03
申请号：US542741
申请日：1995-10-13
申请人： Giang T. Dao
发明人： Giang T. Dao
IPC分类号： G03F1/34 , G03F7/20 , G03F9/00
CPC分类号： G03F1/34 , G03F7/2022 , G03F7/70283 , G03F7/70433 , G03F7/70466
摘要： A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.

9. 发明授权

US06732746B2 Reduced particle contamination manufacturing and packaging for reticles 失效
公开(公告)号：US06732746B2
公开(公告)日：2004-05-11
申请号：US09737139
申请日：2000-12-13
申请人： Giang T. Dao , Ronald J. Kuse
发明人： Giang T. Dao , Ronald J. Kuse
IPC分类号： B08B704
CPC分类号： H01L21/67359 , G03F1/62 , G03F1/66 , G03F7/70741 , G03F7/70916 , G03F7/70925 , G03F7/70983 , H01L21/67366 , H01L21/67393
摘要： A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

10. 发明授权

US5446521A Phase-shifted opaquing ring 失效
标题翻译：相移不透明环
公开(公告)号：US5446521A
公开(公告)日：1995-08-29
申请号：US319475
申请日：1994-10-07
申请人： Robert F. Hainsey , Giang T. Dao
发明人： Robert F. Hainsey , Giang T. Dao
IPC分类号： G03F1/00 , G03F1/26 , G03F1/34 , G03F7/20 , G03B27/28
CPC分类号： G03F7/70633 , G03F1/26 , G03F1/34 , G03F1/44 , G03F7/70283 , G03F7/70433
摘要： An attenuated phase-shifted reticle is disclosed. The reticle comprises a device region and a scribeline region. The scribeline region further comprises metrology cells, which contain features to be patterned for the purpose of measurement, etc. Other portions of the scribeline region comprise a sub-resolution pattern of, for example, lines and spaces 180.degree. out of phase. Since the pattern is sub-resolution, it will not print. Since the pattern comprises features 180.degree. out of phase, the intensity of radiation underneath the pattern is significantly reduced. Therefore, in a lithography method incorporating multiple exposures of the scribeline region, the metrology cells are not overexposed by the overlapping exposures in the stepping system.
摘要翻译：公开了一种衰减的相移掩模版。掩模版包括器件区域和划线区域。划线区域还包括测量单元，其包含要用于测量目的图案化的特征等。划线区域的其他部分包括例如180°异相的线和间隔的子分辨率图案。由于模式是子分辨率，因此不会打印。由于图案包含180°异相特征，图案下方的辐射强度显着降低。因此，在包含划线区域的多次曝光的光刻方法中，计量单元不会被步进系统中的重叠曝光过度曝光。

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