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1. 发明授权

US07674716B2 Adjuvant for chemical mechanical polishing slurry 有权
标题翻译：化学机械抛光浆辅料
公开(公告)号：US07674716B2
公开(公告)日：2010-03-09
申请号：US11319071
申请日：2005-12-28
申请人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Jeong Jin Hong , Young Jun Hong , No Ma Kim , An Na Lee
发明人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Jeong Jin Hong , Young Jun Hong , No Ma Kim , An Na Lee
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.
摘要翻译：公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，其包含骨架和侧链; 和（b）基本材料。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

2. 发明授权

US08652967B2 Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same 有权
标题翻译：用于控制抛光选择性的辅助剂和包含其的化学机械抛光浆料
公开(公告)号：US08652967B2
公开(公告)日：2014-02-18
申请号：US13420815
申请日：2012-03-15
申请人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.
摘要翻译：公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其中助剂包含聚电解质盐，其包含：（a）重均分子量为2,000〜50,000的线性聚电解质与接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与接枝型聚电解质。

3. 发明授权

US08163650B2 Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry comprising the same 有权
标题翻译：用于控制抛光选择性的辅助剂和包含其的化学机械抛光浆料
公开(公告)号：US08163650B2
公开(公告)日：2012-04-24
申请号：US11634238
申请日：2006-12-06
申请人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.
摘要翻译：公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其在阳离子电荷材料上形成吸附层，以增加阴离子带电材料的抛光选择性，其中助剂包含含有：（a）重均分子量为2,000〜50,000的线性聚电解质与重均分子量为1,000〜20,000的接枝型聚电解质的混合物，其包含骨架和侧链; 和（b）基本材料。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与接枝型聚电解质。

4. 发明申请

US20120187333A1 ADJUVANT FOR CONTROLLING POLISHING SELECTIVITY AND CHEMICAL MECHANICAL POLISHING SLURRY COMPRISING THE SAME 有权
标题翻译：用于控制抛光选择性和化学机械抛光浆料的添加剂
公开(公告)号：US20120187333A1
公开(公告)日：2012-07-26
申请号：US13420815
申请日：2012-03-15
申请人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Gi Ra Yi , Jong Pil Kim , Jung Hee Lee , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.
摘要翻译：公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的助剂，其中助剂包含聚电解质盐，该聚电解质盐包含：（a）重均分子量为2,000〜50,000的线性聚电解质与接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与接枝型聚电解质。

5. 发明授权

US08147711B2 Adjuvant for controlling polishing selectivity and chemical mechanical polishing slurry 有权
标题翻译：用于控制抛光选择性和化学机械抛光浆料的辅助剂
公开(公告)号：US08147711B2
公开(公告)日：2012-04-03
申请号：US12086155
申请日：2006-12-08
申请人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.
摘要翻译：公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。还公开了包含佐剂的CMP浆料。助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化在外力下的粘度并且在抛光过程中最小化微细纹的产生。因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

6. 发明申请

US20090267020A1 Adjuvant for Controlling Polishing Selectivity and Chemical Mechanical Polishing Slurry 有权
标题翻译：控制抛光选择性和化学机械抛光浆料的辅助剂
公开(公告)号：US20090267020A1
公开(公告)日：2009-10-29
申请号：US12086155
申请日：2006-12-08
申请人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
发明人： Jung Hee Lee , Jong Pil Kim , Gi Ra Yi , Kwang Ik Moon , Chang Bum Ko , Soon Ho Jang , Seung Beom Cho , Young Jun Hong
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.
摘要翻译：公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。还公开了包含佐剂的CMP浆料。助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化在外力下的粘度并且在抛光过程中最小化微细纹的产生。因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

7. 发明授权

US08062395B2 Adjuvant for CMP slurry 有权
标题翻译： CMP浆料的辅料
公开(公告)号：US08062395B2
公开(公告)日：2011-11-22
申请号：US11783742
申请日：2007-04-11
申请人： Gi Ra Yi , Jong Pil Kim , Young Jun Hong
发明人： Gi Ra Yi , Jong Pil Kim , Young Jun Hong
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.
摘要翻译：公开了一种用于对阳离子充电材料和阴离子充电材料同时研磨磨料颗粒的方法的辅助剂，其被吸收到阳离子充电材料上，从而限制阳离子充电材料的抛光，从而提高阴离子充电材料的抛光选择性，其中所述助剂包含具有小于磨料颗粒的纳米级粒径的核 - 壳结构的聚合物颗粒，其表面是阴离子充电的。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

8. 发明申请

US20070243710A1 Adjuvant for CMP slurry 有权
标题翻译： CMP浆料的辅料
公开(公告)号：US20070243710A1
公开(公告)日：2007-10-18
申请号：US11783742
申请日：2007-04-11
申请人： Gi Ra Yi , Jong Pil Kim , Young Jun Hong
发明人： Gi Ra Yi , Jong Pil Kim , Young Jun Hong
IPC分类号： H01L21/461 , C09K13/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.
摘要翻译：公开了一种用于对阳离子充电材料和阴离子充电材料同时研磨磨料颗粒的方法的辅助剂，其被吸收到阳离子充电材料上，从而限制阳离子充电材料的抛光，从而提高阴离子充电材料的抛光选择性，其中所述助剂包含具有小于磨料颗粒的纳米级粒度的核 - 壳结构的聚合物颗粒，其表面是阴离子充电的。还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

9. 发明授权

US09209087B2 Semiconductor devices including etching stop films 有权
标题翻译：半导体器件包括蚀刻停止膜
公开(公告)号：US09209087B2
公开(公告)日：2015-12-08
申请号：US13243338
申请日：2011-09-23
申请人： Jong Pil Kim , Woncheol Jeong
发明人： Jong Pil Kim , Woncheol Jeong
IPC分类号： H01L31/18 , H01L21/8238
CPC分类号： H01L27/092 , H01L21/823807 , H01L21/823814 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device may include a substrate including an NMOS region and a PMOS region. A gate structure can include a gate pattern and a spacer pattern, where the gate structure is on the substrate. A first etching stop film can be on the substrate in the NMOS region and a second etching stop film can be on the substrate in the PMOS region. A contact hole can penetrate the first and second etching stop films and a contact plug can be in the contact hole. A thickness of the first etching stop film can be greater than a thickness of the second etching stop film. Related methods are also disclosed.
摘要翻译：半导体器件可以包括包括NMOS区和PMOS区的衬底。栅极结构可以包括栅极图案和间隔物图案，其中栅极结构在衬底上。第一蚀刻停止膜可以在NMOS区域的衬底上，并且第二蚀刻停止膜可以在PMOS区域中的衬底上。接触孔可以穿透第一和第二蚀刻停止膜，并且接触插塞可以在接触孔中。第一蚀刻停止膜的厚度可以大于第二蚀刻停止膜的厚度。还公开了相关方法。

10. 发明申请

US20100033993A1 TRANSFORMER HAVING RESONANT INDUCTANCE 有权
标题翻译：具有谐振电感的变压器
公开(公告)号：US20100033993A1
公开(公告)日：2010-02-11
申请号：US12212123
申请日：2008-09-17
申请人： Don Sik Kim , Gun Woo Moon , Kyu Min Cho , Young Do Kim , In Ho Cho , Hak Ryong Kim , Jong Pil Kim , Dong Joong Kim , Tae Won Heo , Sang Cheol Bong
发明人： Don Sik Kim , Gun Woo Moon , Kyu Min Cho , Young Do Kim , In Ho Cho , Hak Ryong Kim , Jong Pil Kim , Dong Joong Kim , Tae Won Heo , Sang Cheol Bong
IPC分类号： H02M3/335 , H01F27/28
CPC分类号： H02M3/337 , H01F27/38 , H02M2007/4811 , Y02B70/1433
摘要： Provided is a transformer having resonant inductance, the transformer including a core that includes a first leg formed in one side thereof, a second leg which is formed in the other side thereof so as to be electromagnetically coupled to the first leg, and a third leg which is formed between the first and second legs so as to be electromagnetically coupled to the first and second legs; a primary winding that is wound around one side of the third leg; a secondary winding that is wound around the other side of the third leg so as to induce power through electromagnetic induction with the primary winding; and a resonant inductance winding that is wound around the outside of the core so as not to be magnetically induced by magnetic fluxes generated from the primary and secondary windings.
摘要翻译：提供一种具有谐振电感的变压器，该变压器包括一芯部，该芯部包括形成在其一侧的第一支脚，另一侧形成为与第一支脚电磁耦合的第二支脚;以及第三支脚其形成在第一和第二腿之间，以便电磁耦合到第一和第二腿; 缠绕在第三条腿一侧的初级绕组; 缠绕在第三腿的另一侧的次级绕组，以便通过与初级绕组的电磁感应来引起电力; 以及缠绕在芯的外侧的谐振电感绕组，以便不被从初级和次级绕组产生的磁通磁感应。

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