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1. 发明授权

US4217154A Method for control of an open gallium diffusion 失效
标题翻译：用于控制开放镓扩散的方法
公开(公告)号：US4217154A
公开(公告)日：1980-08-12
申请号：US955713
申请日：1978-10-30
申请人： Gerhard Popp , Gerhard Held
发明人： Gerhard Popp , Gerhard Held
IPC分类号： C30B31/06 , C30B31/08 , C30B31/18 , H01L21/22 , H01L7/34
CPC分类号： C30B31/08 , C30B31/18 , Y10S438/935
摘要： A method for controlling a gallium diffusion with at least one silicon wafer, wherein precisely dosed amounts of hydrogen, oxygen, and optionally nitrogen are mixed in a combustion chamber where the hydrogen and oxygen is converted into water vapor and hydrogen. The combustion chamber is connected to a source portion of the diffusion oven, wherein is contained a gallium oxide containing crucible. The water vapor, hydrogen (and nitrogen) mixture is then passed from the combustion chamber to the source over where the volatile sub-oxide (Ga.sub.2 O), is produced and then carried in a gas stream to the silicon wafer contained in a main portion of the diffusion oven for diffusion therein.
摘要翻译：一种用至少一个硅晶片控制镓扩散的方法，其中将精确计量的氢，氧和任选的氮气混合在燃烧室中，其中氢和氧被转化为水蒸气和氢气。燃烧室与扩散炉的源部连接，其中含有含有氧化镓的坩埚。然后将水蒸汽，氢气（和氮气）混合物从燃烧室传送到源，在其上产生挥发性亚氧化物（Ga 2 O），然后将其以气流运送到包含在主要部分扩散炉用于扩散。

2. 发明授权

US4680615A Silicon semiconductor component with an edge contour made by an etching technique, and method for manufacturing this component 失效
标题翻译：具有通过蚀刻技术制成的边缘轮廓的硅半导体部件及其制造方法
公开(公告)号：US4680615A
公开(公告)日：1987-07-14
申请号：US744811
申请日：1985-06-14
申请人： Oswald Gotzenbrucker , Gerhard Popp
发明人： Oswald Gotzenbrucker , Gerhard Popp
IPC分类号： H01L21/308 , H01L29/06 , H01L29/74 , B44C1/22 , C03C15/00 , H01L21/306
CPC分类号： H01L29/0661 , H01L21/3085 , Y10S438/978
摘要： Silicon semiconductor component with a wafer-like silicon semiconductor body with an edge contour made by an etching technique. The component has a p-region parallel to a principal surface of the semiconductor body and has in this principal surface a passivating ditch, into which leads a pn-junction extending between the more heavily doped p-region and a less heavily doped n-region, in which the edge contour has in the vicinity of a flank length, between the emergence of the pn-junction into the passivating ditch and this principal surface of the semiconductor body, a small angle of inclination of 1.degree. to 7.degree.. The angle of inclination (.alpha.) of the edge contour is nearly uniform over the major part of the flank length (L) and the following relationships apply:L=(0.8 . . . 1.6).multidot.x.sub.n andH=(0.5 . . . 1.2).multidot.x.sub.p, whereH=the height of the p-doped silicon layer over the pn-junction, measured in the center of the flank length (L),x.sub.n =the extent of the space charge zone into the n-region,x.sub.p =the extent of the space charge zone into the p-region at the cut-off voltage of the component.
摘要翻译：具有通过蚀刻技术制成的具有边缘轮廓的晶片状硅半导体主体的硅半导体部件。该部件具有平行于半导体主体的主表面的p区，并且在该主表面中具有钝化沟，在该钝化沟中引出在更重掺杂的p区和较重掺杂的n区之间延伸的pn结，其中边缘轮廓在侧面长度附近，在pn结到钝化沟的出现和半导体主体的主表面之间，倾斜角小于1°至7°。边缘轮廓的倾角（α）在侧面长度（L）的主要部分上几乎是均匀的，并且以下关系适用：L =（0.8。1.6）xxn和H =（0.5。1.2 ）xxp，其中H =在侧面长度（L）的中心测量的pn结上的p掺杂硅层的高度，xn =到n区域的空间电荷区域的程度，xp = 在组件的截止电压下的空间电荷区域到p区域的程度。

3. 发明授权

US4480025A Water reservoir layers in bleach-fix sheets 失效
标题翻译：漂白固定片中的储水层
公开(公告)号：US4480025A
公开(公告)日：1984-10-30
申请号：US457804
申请日：1983-01-13
申请人： Hao J. Chang , Gerhard Popp , Patrick H. Saturno
发明人： Hao J. Chang , Gerhard Popp , Patrick H. Saturno
IPC分类号： G03C5/26 , G03C7/42 , G03C8/00 , G03C5/54 , G03C1/40 , G03C5/38
CPC分类号： G03C8/00 , G03C5/261 , G03C7/42
摘要： A bleach-fix sheet for use in color photographic processes comprises a support having thereon a bleach-fix layer and a water reservoir layer comprising a water-supplying polymer. In a preferred embodiment, the bleach-fix sheet is useful to bleach and fix a retained image in a color image diffusion transfer process.
摘要翻译：用于彩色照相工艺的漂白固定片材包括其上具有漂白剂固定层的支撑体和包含供水聚合物的储水层。在优选的实施方案中，漂白固定片可用于在彩色图像扩散转移过程中漂白和固定保留的图像。

4. 发明授权

US4256826A Bleach-fix sheets 失效
标题翻译：漂白修复床单
公开(公告)号：US4256826A
公开(公告)日：1981-03-17
申请号：US933399
申请日：1978-08-14
申请人： Gerhard Popp , Patrick H. Saturno , Keith H. Stephen
发明人： Gerhard Popp , Patrick H. Saturno , Keith H. Stephen
IPC分类号： G03C5/26 , G03C7/42 , G03C8/00 , G03C8/26 , G03C8/36 , G03C7/00 , G03C5/32
CPC分类号： G03C5/261 , G03C7/42
摘要： A bleach-fix sheet for use in color photographic processes comprises a support having thereon a bleaching agent, a fixing agent and a hardened hydrophilic binder. In a preferred embodiment, the bleach-fix sheet is useful to bleach and fix a retained image in a color image diffusion transfer unit.
摘要翻译：用于彩色照相方法的漂白固定片材包括其上具有漂白剂，定影剂和硬化的亲水性粘合剂的载体。在优选的实施方案中，漂白固定片可用于将保留的图像漂白并固定在彩色图像扩散转移单元中。

5. 发明授权

US4232326A Chemically sensitive field effect transistor having electrode connections 失效
标题翻译：具有电极连接的化学敏感场效应晶体管
公开(公告)号：US4232326A
公开(公告)日：1980-11-04
申请号：US928309
申请日：1978-07-26
申请人： Arno Neidig , Gerhard Popp , Gabriele Gilbers
发明人： Arno Neidig , Gerhard Popp , Gabriele Gilbers
IPC分类号： G01N27/00 , G01N27/414 , H01L21/24 , H01L21/768 , H01L23/48 , H01L29/08 , H01L29/78 , H01L29/34
CPC分类号： H01L21/24 , G01N27/414 , H01L21/76898 , H01L23/481 , H01L24/05 , H01L29/0847 , H01L2224/04042 , H01L2224/45144 , H01L2224/4847 , H01L2924/12042 , H01L2924/1306
摘要： A chemically sensitive field effect transistor (FET), particularly an ion-sensitive FET (ISFET), and a method of making the same, wherein a semi-conductor body of a first conductivity type is provided with source and drain diffusion zones spaced apart and extending a predetermined distance into the semiconductor body from the front face thereof. Also formed in the semiconductor body is a pair of connection zones extending from the front face to the rear face of the semiconductor body, and connected to the diffusion zones on the front face by means of conductor paths, the diffusion zones, the conduction paths, and the connection zones formed of a material having a second conductivity and which are of a second conduction type with opposite polarity to the conduction type of the semiconductor body. External connections are made to the diffusion zones through the conductor paths and the connection zones by means of connection lines contacting the connection zones at the rear face of the semiconductor body.
摘要翻译：化学敏感场效应晶体管（FET），特别是离子敏感FET（ISFET）及其制造方法，其中第一导电类型的半导体体设置有间隔开的源极和漏极扩散区，从其正面向半导体本体延伸预定距离。还形成在半导体本体中的是从半导体主体的前表面延伸到背面的一对连接区域，并且通过导体路径，扩散区域，导电路径，并且所述连接区由具有第二导电性的材料形成，并且具有与所述半导体主体的导电类型相反极性的第二导电类型。通过导体路径和连接区域通过与半导体本体后表面的连接区域相接触的连接线对扩散区进行外部连接。

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