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1. 发明申请

US20080023144A1 DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMENT ENERGY PLASMA PROVIDING HIGH ETCH RATES 审中-公开
标题翻译：配置高密度和低BOMBARDMENT ENERGY等离子体的电介质蚀刻工具提供高蚀刻率
公开(公告)号：US20080023144A1
公开(公告)日：2008-01-31
申请号：US11778058
申请日：2007-07-15
申请人： Gerardo Delgadino , Chang-Lin Hsieh , Yan Ye , Hyunjong Shim
发明人： Gerardo Delgadino , Chang-Lin Hsieh , Yan Ye , Hyunjong Shim
IPC分类号： H01L21/02
CPC分类号： H01L21/31116 , C09K13/00 , H01L21/31122
摘要： In at least some embodiments, a plasma etch tool is provided which includes a processing chamber capable of receiving a workpiece. The plasma etch tool is configured to generate a high density and low bombardment energy plasma therein from a gas mixture which includes CF4, N2 and Ar, for processing the workpiece. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The density or electron density, can, depending on the embodiment, range from about 5×1010 electrons/cm3 and above, including about 1×1011 electrons/cm3 and above. The gas mixture can further include H2, NH3, a hydrofluorocarbon gas and/or a fluorocarbon gas.
摘要翻译：在至少一些实施例中，提供了包括能够接收工件的处理室的等离子体蚀刻工具。等离子体蚀刻工具被配置为从包括CF 4 N 2，N 2和Ar的气体混合物产生高密度和低轰击能量等离子体，用于加工工件。通过使用高源和低偏置功率设置形成高密度和低轰击能量等离子体。根据实施例，密度或电子密度可以在约5×10 10电子/ cm 3以上，包括约1×10 11 / 电子/ cm 3以上。气体混合物可以进一步包括H 2 CO 3，NH 3，氢氟烃气体和/或碳氟化合物气体。

2. 发明申请

US20060118519A1 Dielectric etch method with high source and low bombardment plasma providing high etch rates 审中-公开
标题翻译：具有高源和低轰击等离子体的介电蚀刻方法提供高蚀刻速率
公开(公告)号：US20060118519A1
公开(公告)日：2006-06-08
申请号：US11003227
申请日：2004-12-03
申请人： Gerardo Delgadino , Chang-Lin Hsieh , Yan Ye , Hyunjong Shim
发明人： Gerardo Delgadino , Chang-Lin Hsieh , Yan Ye , Hyunjong Shim
IPC分类号： C23F1/00 , B44C1/22 , C03C25/68 , H01L21/461
CPC分类号： H01L21/31116 , C09K13/00 , H01L21/31122
摘要： In at least some embodiments, the present invention is a plasma etching method which includes applying a gas mixture comprising CF4, N2 and Ar and forming a high density and low bombardment energy plasma. The high density and low bombardment energy plasma is formed by using high source and low bias power settings. The gas mixture can further include H2, NH3, a hydrofluorocarbon gas and/or a fluorocarbon gas. The hydrofluorocarbon gas can include CH2F2, CH3F; and/or CHF3. The fluorocarbon gas can include C4F8, C4F6 and/or C5F8.
摘要翻译：在至少一些实施方案中，本发明是等离子体蚀刻方法，其包括施加包含CF 4 N 2，N 2和Ar的气体混合物并形成高密度和低轰击能量等离子体高密度和低轰击能量等离子体通过使用高源和低偏压功率设置形成。气体混合物可以进一步包括H 2 CO 3，NH 3，氢氟烃气体和/或碳氟化合物气体。氢氟烃气体可以包括CH 2 2 F 2 CH 3，CH 3 F; 和/或CHF 3。碳氟化合物气体可以包括C 4 C 8 C 6，C 4 F 6和/或C 5 8 。

3. 发明申请

US20070026665A1 METHOD OF FABRICATING A DUAL DAMASCENE INTERCONNECT STRUCTURE 审中-公开
标题翻译：双重DAMASCENE互连结构的制作方法
公开(公告)号：US20070026665A1
公开(公告)日：2007-02-01
申请号：US11535935
申请日：2006-09-27
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/4763 , H01L21/461 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽以及通孔和下面的导电层之间的阻挡层。

4. 发明申请

US20050059234A1 Method of fabricating a dual damascene interconnect structure 审中-公开
标题翻译：制造双镶嵌互连结构的方法
公开(公告)号：US20050059234A1
公开(公告)日：2005-03-17
申请号：US10663304
申请日：2003-09-16
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽，以及通孔和下面的导电层之间的阻挡层。

5. 发明申请

US20050266691A1 Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry 审中-公开
标题翻译：在碳氟化合物蚀刻化学中使用H2添加剂进行碳掺杂Si氧化物蚀刻
公开(公告)号：US20050266691A1
公开(公告)日：2005-12-01
申请号：US11126053
申请日：2005-05-09
申请人： Binxi Gu , Gerardo Delgadino , Yan Ye , Mike Chen
发明人： Binxi Gu , Gerardo Delgadino , Yan Ye , Mike Chen
IPC分类号： B44C1/22 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/0276 , H01L21/31138 , H01L21/76802 , H01L21/76808 , H01L21/76829
摘要： Certain embodiments include an etching method including providing an etch material, applying a gas mixture including hydrogen, forming a plasma, and etching the etch material. The etch material can include a low-k dielectric material. The gas mixture can include a hydrogen gas, a hydrogen-free fluorocarbon, and a nitrogen gas, and further include one or more of a hydrofluorocarbon gas, an inert gas, and/or a carbon monoxide gas. The hydrogen gas can be a diatomic hydrogen, a hydrocarbon, a silane and/or a fluorine-free hydrogen gas, including H2, CH4, C2H4, NH3, and/or H2O gases. The hydrogen-free fluorocarbon gas can be a CxFy gas (where x≧1 and Y≧1) and the hydrofluorocarbon gas can be a CxHyFz gas (where x≧1, y≧1 and z≧1). The gas mixture can be free of oxygen. Embodiments can include reduced pressures, reduced hydrogen flow rates and one or more plasma frequencies.
摘要翻译：某些实施例包括蚀刻方法，包括提供蚀刻材料，施加包括氢气的气体混合物，形成等离子体，以及蚀刻蚀刻材料。蚀刻材料可以包括低k电介质材料。气体混合物可以包括氢气，无氢碳氟化合物和氮气，并且还包括氢氟烃气体，惰性气体和/或一氧化碳气体中的一种或多种。氢气可以是双原子氢，烃，硅烷和/或无氟氢气，包括H 2，CH 4，C 2 H 4，NH 3和/或H 2 O 2气体。无氢碳氟化合物气体可以是气体（其中x> = 1且Y> = 1），并且氢氟烃气体可以是C _{= 1，y> = 1，z> = 1）。气体混合物可以没有氧气。实施例可以包括减压，降低氢气流速和一个或多个等离子体频率。}

6. 发明申请

US20050029229A1 Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material 失效
标题翻译：在介电材料上的牺牲光吸收材料（SLAM）的选择性蚀刻工艺
公开(公告)号：US20050029229A1
公开(公告)日：2005-02-10
申请号：US10706902
申请日：2003-11-12
申请人： Hee Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
发明人： Hee Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/311 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocargon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
摘要翻译：使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。气体混合物包括氢氟烃气体，任选的含氢气体，任选的富含氟的氟碳酸气体，氮气，氧气和惰性气体。该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

7. 发明授权

US06652712B2 Inductive antenna for a plasma reactor producing reduced fluorine dissociation 失效
标题翻译：用于等离子体反应器的感应天线，其产生降低的氟解离
公开(公告)号：US06652712B2
公开(公告)日：2003-11-25
申请号：US10028646
申请日：2001-12-19
申请人： Shiang-Bau Wang , Daniel J. Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , David McParland , Matthew L. Miller , Douglas A. Buchberger, Jr. , Steven C. Shannon
发明人： Shiang-Bau Wang , Daniel J. Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , David McParland , Matthew L. Miller , Douglas A. Buchberger, Jr. , Steven C. Shannon
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.
摘要翻译：用于处理半导体晶片的等离子体反应器的感应天线连接到射频（RF）电源，并且由布置在相反方向上的连续回路中的导体组成，相邻的一对连续的回路具有面对部分电流流动是平行的，面对部分足够接近至少几乎共享公共电流路径，从而在相对的磁极化之间跨越相对部分形成过渡。

8. 发明申请

US20070020944A1 SELECTIVE ETCH PROCESS OF A SACRIFICIAL LIGHT ABSORBING MATERIAL (SLAM) OVER A DIELECTRIC MATERIAL 失效
标题翻译：绝缘材料（SLAM）的选择性蚀刻工艺
公开(公告)号：US20070020944A1
公开(公告)日：2007-01-25
申请号：US11535551
申请日：2006-09-27
申请人： Hee Yeop Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
发明人： Hee Yeop Chae , Jeremiah Pender , Gerardo Delgadino , Xiaoye Zhao , Yan Ye
IPC分类号： C23F1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76808 , H01L21/31116
摘要： A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.
摘要翻译：使用等离子体蚀刻室中的气体混合物的等离子体在衬底上在介电材料（例如碳掺杂氧化物）上选择性地蚀刻牺牲光吸收材料（SLAM）的工艺。气体混合物包括氢氟烃气体，任选的含氢气体，任选的富氟碳氟化合物气体，氮气，氧气和惰性气体。该方法可以提供大于10:1的介电材料蚀刻选择比的SLAM。

9. 发明授权

US06667577B2 Plasma reactor with spoke antenna having a VHF mode with the spokes in phase 失效
标题翻译：具有辐射天线的等离子体反应器具有VHF模式，辐条处于同相状态
公开(公告)号：US06667577B2
公开(公告)日：2003-12-23
申请号：US10025408
申请日：2001-12-18
申请人： Steven Shannon , Daniel Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , Douglas A. Buchberger, Jr. , Shiang-Bau Wang , Robert B. Hagen , Matthew L Miller , Stephen Thai
发明人： Steven Shannon , Daniel Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , Douglas A. Buchberger, Jr. , Shiang-Bau Wang , Robert B. Hagen , Matthew L Miller , Stephen Thai
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall. The set of outer conductive spokes extends radially inwardly toward the conductive post from and is electrically connected to the conductive side wall. In this way, the inner and outer sets of conductive spokes are electrically connected together, the combination of the inner and outer set of spokes with the conductive enclosure having a fundamental resonant frequency inversely proportional to the height of the conductive enclosure and the lengths of the inner and outer set of conductive spokes. An RF source power generator is coupled across the RF power applicator and has an RF frequency corresponding to the fundamental resonant frequency.
摘要翻译：反应器的RF功率施加器包括内部和外部导电的径向辐条。一组内导电轮辐径向向外延伸并且与导电柱电连接到导电侧壁。一组外导电轮辐径向向内延伸到导电柱，并与导电侧壁电连接。以这种方式，导电辐条的内部和外部组电连接在一起，内部和外部组的辐条与导电外壳的组合具有与导电外壳的高度成反比的基本谐振频率和内外套导电辐条。 RF源功率发生器耦合在RF功率施加器上并且具有对应于基本谐振频率的RF频率。

10. 发明授权

US06455431B1 NH3 plasma descumming and resist stripping in semiconductor applications 失效
标题翻译： NH3等离子体除氧和半导体应用中的抗剥离
公开(公告)号：US06455431B1
公开(公告)日：2002-09-24
申请号：US09629329
申请日：2000-08-01
申请人： Chang Lin Hsieh , Hui Chen , Jie Yuan , Yan Ye
发明人： Chang Lin Hsieh , Hui Chen , Jie Yuan , Yan Ye
IPC分类号： H01L21302
CPC分类号： H01L21/31138 , G03F7/427
摘要： In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is disclosed for descumming residual photoresist material from areas where it is not desired after patterning of the photoresist. In another embodiment, a misaligned patterned photoresist is stripped from a semiconductor substrate surface. In particular, the method comprises exposing the semiconductor structure to a plasma generated from a source gas comprising NH3. A substrate bias voltage is utilized in both methods in order to produce anisotropic etching. In the descumming embodiment, the critical dimensions of the patterned photoresist are maintained. In the photoresist stripping embodiment, a patterned photoresist is removed without adversely affecting a partially exposed underlying layer of an organic dielectric.
摘要翻译：通常，本公开涉及用于从半导体结构上的位置去除光致抗蚀剂的方法，其中其存在是不期望的。在一个实施例中，公开了一种从光刻胶图形化之后不希望的区域去除残余光致抗蚀剂材料的方法。在另一个实施例中，从半导体衬底表面剥离未对准的图案化光致抗蚀剂。特别地，该方法包括将半导体结构暴露于由包含NH 3的源气体产生的等离子体。为了产生各向异性蚀刻，在两种方法中均采用衬底偏置电压。在除尘实施例中，维持图案化光致抗蚀剂的临界尺寸。在光致抗蚀剂剥离实施例中，去除图案化的光致抗蚀剂，而不会有害地影响有机电介质的部分暴露的下层。

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