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1. 发明授权

US07387969B2 Top patterned hardmask and method for patterning 有权
标题翻译：顶部图案化硬掩模和图案化方法
公开(公告)号：US07387969B2
公开(公告)日：2008-06-17
申请号：US11084495
申请日：2005-03-18
申请人： George Liu , Vencent Chang , Norman Chen , Yao-Ching Ku , Chin-Hsiang Lin , Kuei Shun Chen
发明人： George Liu , Vencent Chang , Norman Chen , Yao-Ching Ku , Chin-Hsiang Lin , Kuei Shun Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , G03F7/11 , H01L21/0274 , H01L21/0332 , H01L21/76807
摘要： A patterned hardmask and method for forming the same, the method including providing a substrate comprising an overlying resist sensitive to activating radiation; forming an overlying hardmask insensitive to the activating radiation; exposing the resist through the hardmask to the activating radiation; baking the resist and the hardmask; and, developing the hardmask and resist to form a patterned resist and patterned hardmask.
摘要翻译：一种图案化硬掩模及其形成方法，所述方法包括提供包含对活化辐射敏感的上覆抗蚀剂的基底; 形成对激活辐射不敏感的上覆硬掩模; 将抗蚀剂通过硬掩模暴露于活化辐射; 烘烤抗蚀剂和硬掩模; 并开发硬掩模和抗蚀剂以形成图案化的抗蚀剂和图案化的硬掩模。

2. 发明授权

US08472005B2 Methodology for implementing enhanced optical lithography for hole patterning in semiconductor fabrication 有权
标题翻译：实现半导体制造中孔图案化的增强型光刻技术的方法
公开(公告)号：US08472005B2
公开(公告)日：2013-06-25
申请号：US11677693
申请日：2007-02-22
申请人： George Liu , Kuei Shun Chen , Norman Chen , Vencent Chang , Chin-Hsiang Lin
发明人： George Liu , Kuei Shun Chen , Norman Chen , Vencent Chang , Chin-Hsiang Lin
IPC分类号： G03B27/54
CPC分类号： G03F7/70425 , G03F7/701
摘要： System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.
摘要翻译：描述了用于增强半导体制造中的孔图案化的光学光刻方法的系统和方法。在一个实施例中，光刻系统包括用于调节来自光源的光的照明系统，所述照明系统产生三孔照明图案; 包括至少一部分要成像到基底上的图案的掩模版，其中由照明系统产生的三孔照明图案通过掩模版投射; 以及设置在掩模版和基板之间的投影透镜。

3. 发明申请

US20080204688A1 Methodology For Implementing Enhanced Optical Lithography For Hole Patterning In Semiconductor Fabrication 有权
标题翻译：在半导体制造中实现孔图案的增强光刻法的方法
公开(公告)号：US20080204688A1
公开(公告)日：2008-08-28
申请号：US11677693
申请日：2007-02-22
申请人： George Liu , Kuei Shun Chen , Norman Chen , Vencent Chang , Chin-Hsiang Lin
发明人： George Liu , Kuei Shun Chen , Norman Chen , Vencent Chang , Chin-Hsiang Lin
IPC分类号： G03B27/54
CPC分类号： G03F7/70425 , G03F7/701
摘要： System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.
摘要翻译：描述了用于增强半导体制造中的孔图案化的光学光刻方法的系统和方法。在一个实施例中，光刻系统包括用于调节来自光源的光的照明系统，所述照明系统产生三孔照明图案; 包括至少一部分要成像到基底上的图案的掩模版，其中由照明系统产生的三孔照明图案通过掩模版投射; 以及设置在掩模版和基板之间的投影透镜。

4. 发明授权

US07642101B2 Semiconductor device having in-chip critical dimension and focus patterns 失效
标题翻译：具有芯片临界尺寸和聚焦图案的半导体器件
公开(公告)号：US07642101B2
公开(公告)日：2010-01-05
申请号：US11567055
申请日：2006-12-05
申请人： George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
发明人： George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L23/544 , G03F7/70625 , G03F7/70641 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is fabricated to include one or more sets of calibration patterns used to measure line pitch and line focus.
摘要翻译：制造半导体器件以包括用于测量线间距和线焦点的一组或多组校准图案。

5. 发明申请

US20080128924A1 Semiconductor Device Having In-Chip Critical Dimension and Focus Patterns 失效
标题翻译：具有片内临界尺寸和聚焦模式的半导体器件
公开(公告)号：US20080128924A1
公开(公告)日：2008-06-05
申请号：US11567055
申请日：2006-12-05
申请人： George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
发明人： George Liu , Vencent Chang , Chin-Hsiang Lin , Kuei Shun Chen , Norman Chen
IPC分类号： H01L23/544 , H01L21/66 , G03F7/20
CPC分类号： H01L23/544 , G03F7/70625 , G03F7/70641 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is fabricated to include one or more sets of calibration patterns used to measure line pitch and line focus.
摘要翻译：制造半导体器件以包括用于测量线间距和线焦点的一组或多组校准图案。

6. 发明申请

US20060211254A1 Top patterned hardmask and method for patterning 有权
标题翻译：顶部图案化硬掩模和图案化方法
公开(公告)号：US20060211254A1
公开(公告)日：2006-09-21
申请号：US11084495
申请日：2005-03-18
申请人： George Liu , Vencent Chang , Norman Chen , Yao-Ching Ku , Chin-Hsiang Lin , Kuei Chen
发明人： George Liu , Vencent Chang , Norman Chen , Yao-Ching Ku , Chin-Hsiang Lin , Kuei Chen
IPC分类号： H01L21/467 , G03F1/00
CPC分类号： H01L21/31144 , G03F7/11 , H01L21/0274 , H01L21/0332 , H01L21/76807
摘要： A patterned hardmask and method for forming the same, the method including providing a substrate comprising an overlying resist sensitive to activating radiation; forming an overlying hardmask insensitive to the activating radiation; exposing the resist through the hardmask to the activating radiation; baking the resist and the hardmask; and, developing the hardmask and resist to form a patterned resist and patterned hardmask.
摘要翻译：一种图案化硬掩模及其形成方法，所述方法包括提供包含对活化辐射敏感的上覆抗蚀剂的基底; 形成对激活辐射不敏感的上覆硬掩模; 将抗蚀剂通过硬掩模暴露于活化辐射; 烘烤抗蚀剂和硬掩模; 并开发硬掩模和抗蚀剂以形成图案化的抗蚀剂和图案化的硬掩模。

7. 发明授权

US09091923B2 Contrast enhancing exposure system and method for use in semiconductor fabrication 有权
标题翻译：对比增强曝光系统和半导体制造中使用的方法
公开(公告)号：US09091923B2
公开(公告)日：2015-07-28
申请号：US11677879
申请日：2007-02-22
申请人： George Liu , Vencent Chang , Norman Chen , Kuei Shun Chen , Chin-Hsiang Lin
发明人： George Liu , Vencent Chang , Norman Chen , Kuei Shun Chen , Chin-Hsiang Lin
IPC分类号： G03F1/00 , G03F7/20 , G03F7/004
CPC分类号： G03F1/144 , G03F1/70 , G03F7/0045 , G03F7/2022 , G03F7/70475
摘要： Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described. The method includes dividing the pattern into two component patterns; exposing the photoresist layer of the substrate to UV light through a first mask corresponding to a first one of the component patterns; subsequent to the exposing the photoresist layer of the substrate to UV light through the first mask, exposing the photoresist layer of the substrate to UV light through a second mask corresponding to a second one of the component patterns, wherein the PAGs and PBGs disposed in areas of the photoresist layer that have been exposed to UV light at least twice are activated and wherein the activated PAGs neutralize the activated PBGs in areas of the photoresist layer that have been exposed to UV light at least twice.
摘要翻译：描述了用于半导体制造的对比增强曝光装置和方法。在一个实施例中，描述了在衬底上形成图案的方法，其中衬底包括包含光酸发生器（“PAG”）和光产生器（“PBG”）的光致抗蚀剂层。该方法包括将图案划分成两个分量图案; 通过与第一组分图案相对应的第一掩模将衬底的光致抗蚀剂层暴露于UV光; 在将衬底的光致抗蚀剂层暴露于通过第一掩模的UV光之后，通过对应于第二组件图案的第二掩模将衬底的光致抗蚀剂层暴露于UV光，其中设置在区域中的PAG和PBG 已经暴露于UV光的光致抗蚀剂层至少两次被激活，并且其中激活的PAG在已经暴露于UV光的光致抗蚀剂层的区域中中和活化的PBG至少两次。

8. 发明申请

US20080206679A1 Contrast Enhancing Exposure System and Method For Use In Semiconductor Fabrication 有权
标题翻译：对比增强曝光系统和半导体制造中的使用方法
公开(公告)号：US20080206679A1
公开(公告)日：2008-08-28
申请号：US11677879
申请日：2007-02-22
申请人： George Liu , Vencent Chang , Norman Chen , Kuei Shun Chen , Chin-Hsiang Lin
发明人： George Liu , Vencent Chang , Norman Chen , Kuei Shun Chen , Chin-Hsiang Lin
IPC分类号： G03F1/02
CPC分类号： G03F1/144 , G03F1/70 , G03F7/0045 , G03F7/2022 , G03F7/70475
摘要： Contrast enhancing exposure apparatus and method for use in semiconductor fabrication are described. In one embodiment, a method for forming a pattern on a substrate, wherein the substrate includes a photoresist layer comprising photoacid generators (“PAGs”) and photobase generators (“PBGs”), is described. The method includes dividing the pattern into two component patterns; exposing the photoresist layer of the substrate to UV light through a first mask corresponding to a first one of the component patterns; subsequent to the exposing the photoresist layer of the substrate to UV light through the first mask, exposing the photoresist layer of the substrate to UV light through a second mask corresponding to a second one of the component patterns, wherein the PAGs and PBGs disposed in areas of the photoresist layer that have been exposed to UV light at least twice are activated and wherein the activated PAGs neutralize the activated PBGs in areas of the photoresist layer that have been exposed to UV light at least twice.
摘要翻译：描述了用于半导体制造的对比增强曝光装置和方法。在一个实施例中，描述了在衬底上形成图案的方法，其中衬底包括包含光酸发生器（“PAG”）和光产生器（“PBG”）的光致抗蚀剂层。该方法包括将图案划分成两个分量图案; 通过与第一组分图案相对应的第一掩模将衬底的光致抗蚀剂层暴露于UV光; 在将衬底的光致抗蚀剂层暴露于通过第一掩模的UV光之后，通过对应于第二组件图案的第二掩模将衬底的光致抗蚀剂层暴露于UV光，其中设置在区域中的PAG和PBG 已经暴露于UV光的光致抗蚀剂层至少两次被激活，并且其中激活的PAG在已经暴露于UV光的光致抗蚀剂层的区域中中和活化的PBG至少两次。

9. 发明授权

US08431291B2 Intensity selective exposure photomask 有权
标题翻译：强度选择性曝光光掩模
公开(公告)号：US08431291B2
公开(公告)日：2013-04-30
申请号：US13281198
申请日：2011-10-25
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/00 , G03F1/36
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
摘要翻译：还提供强度选择性曝光光掩模，还描述为渐变光掩模。光掩模包括包括第一子分解特征阵列的第一区域。第一个区域阻止了第一个入射辐射的百分比。光掩模还包括包括第二子分辨率特征阵列的第二区域。第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。

10. 发明授权

US08673520B2 Intensity selective exposure photomask 有权
标题翻译：强度选择性曝光光掩模
公开(公告)号：US08673520B2
公开(公告)日：2014-03-18
申请号：US13046265
申请日：2011-03-11
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/00
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
摘要翻译：还提供强度选择性曝光光掩模，还描述为渐变光掩模。光掩模包括包括第一子分解特征阵列的第一区域。第一个区域阻止了第一个入射辐射的百分比。光掩模还包括包括第二子分辨率特征阵列的第二区域。第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。第一和第二阵列的每个特征包括设置在衰减材料区域中的开口。

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