会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 7. 发明授权
    • Polarization state converter
    • 极化状态转换器
    • US5493624A
    • 1996-02-20
    • US344551
    • 1994-11-23
    • George H. B. Thompson
    • George H. B. Thompson
    • G02B6/126G02B6/14G02B6/00
    • G02B6/14G02B6/126
    • An integrated optics polarization state converter comprises optically in series a first TM.sub.0 to TM.sub.1 mode converter that is substantially transparent to TE.sub.0, a concatenation of total internal reflectors and a second TM.sub.0 to TM.sub.1 converter, similarly substantially transparent to TE.sub.0, which is connected the way round so as to operate as a TM.sub.1 to TM.sub.0 converter. Each TM.sub.0 to TM.sub.1 converter may comprise a tandem arrangement of a 2.times.2 TE.sub.0 /TM.sub.0 polarization beam splitting coupler and a mismatched, 3 dB maximum, 2.times.2 beam splitting coupler. The place of the TM.sub.0 to TM.sub.1 converters substantially transparent to TE.sub.0 may be taken by TE.sub.0 to TE.sub.1 converters substantially transparent to TM.sub.0.
    • 集成光学偏振状态转换器包括光学地串联第一TM0至TM1模式转换器,其对于TE0基本上是透明的,总内部反射器的级联和第二TM0至TM1转换器类似地基本上透明于TE0,其连接在一起 以便作为TM1到TM0转换器工作。 每个TM0至TM1转换器可以包括2x2TE0 / TM0偏振分束耦合器和不匹配的3dB最大2×2分束耦合器的串联布置。 对TE0基本透明的TM0至TM1转换器的位置可以由基本上对TM0透明的TE0至TE1转换器来实现。
    • 9. 发明授权
    • Photo-detectors
    • 光电探测器
    • US4740823A
    • 1988-04-26
    • US791197
    • 1985-10-25
    • George H. B. Thompson
    • George H. B. Thompson
    • G01J1/02H01L21/338H01L27/144H01L29/778H01L29/812H01L31/09H01L31/107H01L27/14
    • H01L27/1443H01L31/09
    • A photo-detector includes a photoconductor comprised by a structure similaro a high electron mobility transistor (HEMT) but with the gate removed and the layer of high band gap thinned in order to reduce noise. On a semi-insulating substrate (8), an n-channel layer (9) is disposed and on channel layer (9) is disposed on n.sup.+ layer (7). Light incident on the n.sup.+ layer (7) causes electron-hole pairs to be generated in layer 9, the electrons and holes of which migrate to oppositely biased contact regions 10 and 11 respectively. The photoconductor is monolithically integrated with an HEMT (TI) (FIG. 3, FIG. 4 or FIG. 6) the latter comprising a pre-amplifier for a receiver circuit. In dependence on the materials chosen the photo-detector may be employed to detect wavelengths of the order of
    • 光检测器包括由类似于高电子迁移率晶体管(HEMT)的结构组成的光电导体,但是去除了栅极并且为了降低噪声而使高带隙层变薄。 在半绝缘基板(8)上,设置n沟道层(9),在沟道层(9)上设置n +层(7)。 入射到n +层(7)上的光使层9中产生电子 - 空穴对,其中电子和空穴分别迁移到相对偏压的接触区域10和11。 光电导体与HEMT(TI)(图3,图4或图6)单片集成,后者包括用于接收器电路的前置放大器。 根据所选择的材料,可以使用光电检测器来检测大小<8.88μm或<1.6μm的波长。