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1. 发明授权

US07700256B2 Phenolic/alicyclic copolymers and photoresists 有权
标题翻译：酚醛/脂环族共聚物和光致抗蚀剂
公开(公告)号：US07700256B2
公开(公告)日：2010-04-20
申请号：US10313954
申请日：2002-12-06
申请人： George G. Barclay , Ashish Pandya , Wang Yueh , Anthony Zampini , Gary Ganghui Teng , Zhibiao Mao
发明人： George G. Barclay , Ashish Pandya , Wang Yueh , Anthony Zampini , Gary Ganghui Teng , Zhibiao Mao
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.
摘要翻译：本发明涉及包含苯酚重复单元和含有脂环族基团的光酸不稳定酯的新聚合物，优选适合含有7至约20个碳原子的大体积基团，例如烷基金刚烷基，乙基戊基，三环癸烷基或蒎烷基组。本发明的聚合物可用作化学增效正性抗蚀剂的组分。

2. 发明授权

US06492086B1 Phenolic/alicyclic copolymers and photoresists 有权
标题翻译：酚醛/脂环族共聚物和光致抗蚀剂
公开(公告)号：US06492086B1
公开(公告)日：2002-12-10
申请号：US09414738
申请日：1999-10-08
申请人： George G. Barclay , Ashish Pandya , Wang Yueh , Anthony Zampini , Gary Ganghui Teng , Zhibiao Mao
发明人： George G. Barclay , Ashish Pandya , Wang Yueh , Anthony Zampini , Gary Ganghui Teng , Zhibiao Mao
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.
摘要翻译：本发明涉及包含苯酚重复单元和含有脂环族基团的光酸不稳定酯的新聚合物，优选适合含有7至约20个碳原子的大体积基团，例如烷基金刚烷基，乙基戊基，三环癸烷基或蒎烷基组。本发明的聚合物可用作化学增效正性抗蚀剂的组分。

3. 发明授权

US06849381B2 Copolymers and photoresist compositions comprising same 失效
标题翻译：包含其的共聚物和光致抗蚀剂组合物
公开(公告)号：US06849381B2
公开(公告)日：2005-02-01
申请号：US10408522
申请日：2003-04-07
申请人： George G. Barclay , Stefan J. Caporale , Wang Yueh , Zhibiao Mao , Joseph Mattia
发明人： George G. Barclay , Stefan J. Caporale , Wang Yueh , Zhibiao Mao , Joseph Mattia
IPC分类号： C08F220/18 , C08F222/06 , C08F232/00 , C08L33/06 , C08L35/00 , C08L45/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.
摘要翻译：本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。本发明的聚合物适当地含有1）优选含有脂环族部分的光酸不稳定基团; 2）聚合电子缺陷单体; 3）聚合的环烯烃部分。本发明特别优选的聚合物是四聚物或五元共聚物，优选具有不同聚合的降冰片烯单元。

4. 发明授权

US06777157B1 Copolymers and photoresist compositions comprising same 失效
标题翻译：包含其的共聚物和光致抗蚀剂组合物
公开(公告)号：US06777157B1
公开(公告)日：2004-08-17
申请号：US09567814
申请日：2000-05-09
申请人： George G. Barclay , Stefan J. Caporale , Wang Yueh , Zhibiao Mao , Joseph Mattia
发明人： George G. Barclay , Stefan J. Caporale , Wang Yueh , Zhibiao Mao , Joseph Mattia
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0395 , Y10S430/106 , Y10S430/111
摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.
摘要翻译：本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。本发明的聚合物适当地含有1）优选含有脂环族部分的光酸不稳定基团; 2）聚合电子缺陷单体; 3）聚合的环烯烃部分。本发明特别优选的聚合物是四聚物或五元共聚物，优选具有不同聚合的降冰片烯单元。

5. 发明授权

US07090968B2 Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same 有权
标题翻译：具有腈和脂环族离去基团的共聚物和包含它们的光致抗蚀剂组合物
公开(公告)号：US07090968B2
公开(公告)日：2006-08-15
申请号：US10683532
申请日：2003-10-10
申请人： George G. Barclay , Zhibiao Mao , Robert J. Kavanagh
发明人： George G. Barclay , Zhibiao Mao , Robert J. Kavanagh
IPC分类号： G03F7/30
CPC分类号： G03F7/039 , C07C69/54 , C07C2602/42 , C08F220/18 , C08F220/44 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.
摘要翻译：本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。本发明的聚合物以特定的摩尔比含有具有脂环部分的腈和光致酸不稳定基团，特别是桥连的双环或三环基团或其它笼状基团。本发明的聚合物和抗蚀剂可显示出对等离子体蚀刻剂的实质性阻力。

6. 发明授权

US06692888B1 Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same 有权
公开(公告)号：US06692888B1
公开(公告)日：2004-02-17
申请号：US09413763
申请日：1999-10-07
申请人： George G. Barclay , Zhibiao Mao , Robert J. Kavanagh
发明人： George G. Barclay , Zhibiao Mao , Robert J. Kavanagh
IPC分类号： G03F7039
CPC分类号： G03F7/039 , C07C69/54 , C07C2602/42 , C08F220/18 , C08F220/44 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

7. 发明授权

US08518825B1 Method to manufacture trench-first copper interconnection 有权
标题翻译：制造沟槽第一铜互连的方法
公开(公告)号：US08518825B1
公开(公告)日：2013-08-27
申请号：US13726532
申请日：2012-12-24
申请人： Zhibiao Mao
发明人： Zhibiao Mao
IPC分类号： H01L21/44 , H01L21/00 , H01L21/4763 , H01L21/31 , H01L21/469 , H01L23/48 , H01L23/52
CPC分类号： H01L21/0273 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L2924/0002
摘要： The present invention relates to manufacturing technology of damascene copper interconnection in the semiconductor manufacturing field, and especially relates to a method to manufacture by trench-first copper interconnection. The method to manufacture trench-first copper interconnection forms metal trench and VIA hole structures in the photoresist which can form a hard mask through exposure and development processes, and then forms metal interconnection lines via etching metal trench and VIA hole in one etch process. The above method replaces the existing.
摘要翻译：本发明涉及半导体制造领域的镶嵌铜互连的制造技术，特别涉及通过沟槽第一铜互连制造的方法。制造沟槽第一铜互连的方法在光致抗蚀剂中形成金属沟槽和VIA孔结构，其可以通过曝光和显影工艺形成硬掩模，然后在一个蚀刻工艺中通过蚀刻金属沟槽和VIA孔形成金属互连线。上述方法取而代之。

8. 发明授权

US08823936B2 Structure for critical dimension and overlay measurement 有权
标题翻译：关键尺寸和覆盖测量结构
公开(公告)号：US08823936B2
公开(公告)日：2014-09-02
申请号：US13667363
申请日：2012-11-02
申请人： Yunqing Dai , Jian Wang , Zhibiao Mao
发明人： Yunqing Dai , Jian Wang , Zhibiao Mao
IPC分类号： G01B11/00 , G01B11/14 , G01B11/28 , G03F7/20
CPC分类号： G03F7/70625 , G03F7/70633
摘要： The invention provides a structure for critical dimension and overlay measurement including a measuring unit, a first measurement pattern for measuring overlay and a second measurement pattern for measuring linewidth, line density and/or line semi-density. The first target pattern includes an outer bar structure disposed on a first layer and an inner bar structure disposed on a second layer; the outer bar structure and/or the inner bar structure has a same shared pattern structure with the second target pattern. The pattern structure includes four bars with the same shape positioned orthogonally and closely to each other, and at least two orthogonally positioned bars include N equally spaced rectangular lines of the same width, wherein, N is an odd number; the N rectangular lines include one central rectangular line and N−1 auxiliary rectangular lines.
摘要翻译：本发明提供了一种关键尺寸和重叠测量的结构，包括测量单元，用于测量覆盖层的第一测量图案和用于测量线宽，线密度和/或线半密度的第二测量图案。第一目标图案包括设置在第一层上的外部杆结构和设置在第二层上的内部杆结构; 外杆结构和/或内杆结构具有与第二目标图案相同的共享图案结构。图案结构包括具有彼此正交和紧密定位的相同形状的四个条，并且至少两个正交定位的条包括相同宽度的N个等间隔的矩形线，其中N是奇数; N条矩形线包括一个中心矩形线和N-1条辅助矩形线。

9. 发明授权

US07183037B2 Antireflective coatings with increased etch rates 有权
标题翻译：具有增加蚀刻速率的抗反射涂层
公开(公告)号：US07183037B2
公开(公告)日：2007-02-27
申请号：US09932792
申请日：2001-08-17
申请人： Zhibiao Mao , Suzanne Coley , Timothy G. Adams
发明人： Zhibiao Mao , Suzanne Coley , Timothy G. Adams
IPC分类号： G03C1/76
CPC分类号： G03F7/091
摘要： The present invention provides new light absorbing compositions suitable for use as an antireflective coating (“ARC”) with an overcoated resist layer. ARCs of the invention exhibit increased etch rates in standard plasma etchants. Preferred ARCs of invention have significantly increased oxygen content relative to prior compositions.
摘要翻译：本发明提供适合用作具有外涂抗蚀剂层的抗反射涂层（“ARC”）的新的光吸收组合物。本发明的ARC在标准等离子体蚀刻剂中表现出增加的蚀刻速率。本发明的优选ARCs相对于现有组合物具有显着增加的氧含量。

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