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1. 发明授权

US06979838B2 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof 失效
公开(公告)号：US06979838B2
公开(公告)日：2005-12-27
申请号：US10654189
申请日：2003-09-03
申请人： Gary R. Ashton , Gary A. Gibson , Robert N. Bicknell-Tassius
发明人： Gary R. Ashton , Gary A. Gibson , Robert N. Bicknell-Tassius
IPC分类号： G03F7/20 , G11B9/00 , G11B9/04 , G11B9/10 , G11B11/00 , G11B11/08 , H01L29/18
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1463 , G11B9/149 , G11B11/002 , G11B11/08
摘要： An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, and a second layer forming one layer in the layered diode structure, the second layer comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, comprises depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.

2. 发明授权

US07151008B2 Fabrication method for phase change diode memory cells 失效
标题翻译：相变二极管存储单元的制作方法
公开(公告)号：US07151008B2
公开(公告)日：2006-12-19
申请号：US11253233
申请日：2005-10-17
申请人： Gary R. Ashton , Gary A. Gibson , Robert N. Bicknell-Tassius
发明人： Gary R. Ashton , Gary A. Gibson , Robert N. Bicknell-Tassius
IPC分类号： H01L21/06
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1463 , G11B9/149 , G11B11/002 , G11B11/08
摘要： A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes is disclosed. The method includes depositing a first diode layer of CuInSe material on a substrate and depositing a second diode layer of phase-change material on the first diode layer.
摘要翻译：公开了一种形成用于相变数据存储阵列的二极管结构的方法，其具有适于形成多个数据存储单元二极管的多个薄膜层。该方法包括在衬底上沉积CuInSe材料的第一二极管层并在第一二极管层上沉积相变材料的第二二极管层。

3. 发明授权

US06961299B2 Storage device 有权
标题翻译：储存设备
公开(公告)号：US06961299B2
公开(公告)日：2005-11-01
申请号：US10310606
申请日：2002-12-05
申请人： Robert Bicknell-Tassius , Gary R. Ashton
发明人： Robert Bicknell-Tassius , Gary R. Ashton
IPC分类号： G11B9/04 , G11B9/00 , G11B9/10 , G11B11/00 , G11B11/08 , G11B7/00
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B11/08
摘要： A storage device has a stator layer, an emitter layer, and a rotor layer. The rotor layer has a plurality of data clusters, each having a substrate which is electrically isolated from the other data clusters by a dielectric material. Another storage device has a means for electrically isolating a plurality of data clusters, each having phase change media coupled to a conductive substrate, from each other. The storage device also has a means for reading a differential signal from each of the data clusters based on currents which flow from the phase change media to the conductive substrate in each data cluster. A method of electrically isolating conductive regions on a micromover device is also provided.
摘要翻译：存储装置具有定子层，发射极层和转子层。转子层具有多个数据簇，每个数据簇具有通过电介质材料与其它数据簇电隔离的衬底。另一种存储装置具有用于将彼此相互连接的多个数据簇（各自具有耦合到导电基板的相变介质）电隔离的装置。存储装置还具有用于基于从每个数据簇中的相变介质流到导电基板的电流从每个数据簇读取差分信号的装置。还提供了一种在微缩装置上电隔离导电区域的方法。

4. 发明授权

US07027380B2 Atomic resolution storage device 有权
公开(公告)号：US07027380B2
公开(公告)日：2006-04-11
申请号：US10137784
申请日：2002-05-02
申请人： Gary R. Ashton
发明人： Gary R. Ashton
IPC分类号： G11B9/00
CPC分类号： B82Y10/00 , G11B9/14 , G11B9/1463 , G11B11/007
摘要： A storage device and a storage system employing the storage device. In one embodiment, the storage devices include an electron emitter and a storage medium in close proximity to the electron emitter. The storage medium includes a phase change material. A read signal detector capable of detecting light is provided in communication with the storage medium.

5. 发明授权

US07057202B2 Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof 失效
标题翻译：使用相变二极管存储单元的超高密度存储装置及其制造方法
公开(公告)号：US07057202B2
公开(公告)日：2006-06-06
申请号：US10673003
申请日：2003-09-26
申请人： Gary R. Ashton , Robert J. Davidson
发明人： Gary R. Ashton , Robert J. Davidson
IPC分类号： H01L47/02
CPC分类号： B82Y10/00 , G11B9/10 , G11B9/14 , G11B9/1409 , G11B9/1463 , G11B9/149 , G11B11/002 , G11B11/08
摘要： An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for detecting a memory or data state of the storage cells, wherein the device comprises a phase-change data storage layer capable of changing states in response to the beams from the emitters, comprising a material containing copper, indium and selenium. A method of forming a diode structure for a phase-change data storage array, having multiple thin film layers adapted to form a plurality of data storage cell diodes, wherein the method comprises depositing a first diode layer of material on a substrate, and depositing a second diode layer of phase-change material on the first diode layer, the phase-change material containing copper, indium and selenium.
摘要翻译：一种超高密度数据存储装置，其使用相变二极管存储单元，并且具有用于引导定向能量束的多个发射器，用于形成多个数据存储单元的层和用于检测存储器或数据状态的分层二极管结构存储单元，其中该装置包括能够响应于来自发射器的光束而改变状态的相变数据存储层，包括含有铜，铟和硒的材料。一种形成用于相变数据存储阵列的二极管结构的方法，其具有适于形成多个数据存储单元二极管的多个薄膜层，其中所述方法包括在衬底上沉积材料的第一二极管层，第一二极管层上的相变材料的第二二极管层，含有铜，铟和硒的相变材料。

6. 发明授权

US4583128A Continuous tone recording system incorporating feedback control circuit 失效
标题翻译：连续色调记录系统结合了反馈控制电路
公开(公告)号：US4583128A
公开(公告)日：1986-04-15
申请号：US644874
申请日：1984-08-27
申请人： Walter F. Anderson, Jr. , Gary R. Ashton , Peter B. Jamieson
发明人： Walter F. Anderson, Jr. , Gary R. Ashton , Peter B. Jamieson
IPC分类号： B41J2/44 , G02B26/12 , H04N1/113 , H04N1/23 , H04N1/40 , H04N1/36
CPC分类号： H04N1/4005 , G02B26/12 , H04N1/1135 , H04N1/40037
摘要： A continuous tone image recording system comprises a solid state laser diode capable of sending out an analog signal-controlled pulsed beam of light, a continuous feedback circuit for stabilizing the laser diode light output, and an optical system for changing the path of the beam of light. The laser beam scans across a photosensitive receptor surface to provide scanned lines, which are positioned along the length of the receptor surface so as to provide images containing at least 64 levels of gray on transparent recording media or at least 32 levels of gray on opaque media.
摘要翻译：连续色调图像记录系统包括能够发出模拟信号控制的脉冲光束的固态激光二极管，用于稳定激光二极管光输出的连续反馈电路和用于改变激光二极管光输出的光束路径的光学系统光。激光束扫描光敏受体表面以提供沿着受体表面长度定位的扫描线，以便在透明记录介质上提供包含至少64层灰度的图像，或者在不透明介质上提供至少32层灰度。

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