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1. 发明申请

US20120003388A1 METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY 有权
标题翻译：具有可变温度能力的基于热的基板加工的方法和装置
公开(公告)号：US20120003388A1
公开(公告)日：2012-01-05
申请号：US13169373
申请日：2011-06-27
申请人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , BENJAMIN CHENG WANG , AVGERINOS V. GELATOS , KAI WU , MICHAEL P. KARAZIM , JING LIN , OLKAN CUVALCI
发明人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , BENJAMIN CHENG WANG , AVGERINOS V. GELATOS , KAI WU , MICHAEL P. KARAZIM , JING LIN , OLKAN CUVALCI
IPC分类号： C23C16/455 , C23C16/06 , C23C16/46 , C23C16/52 , B05C11/00 , C23C16/458
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

2. 发明申请

US20130247826A1 APPARATUS FOR VARIABLE SUBSTRATE TEMPERATURE CONTROL 有权
标题翻译：可变基板温度控制装置
公开(公告)号：US20130247826A1
公开(公告)日：2013-09-26
申请号：US13430278
申请日：2012-03-26
申请人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , AVGERINOS V. GELATOS , OLKAN CUVALCI , KAI WU , MICHAEL P. KARAZIM
发明人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , AVGERINOS V. GELATOS , OLKAN CUVALCI , KAI WU , MICHAEL P. KARAZIM
IPC分类号： C23C16/46 , F24J3/00
CPC分类号： C23C16/46 , C23C16/45565 , C23C16/4583 , C23C16/4585 , C23C16/4586 , C23C16/481 , C23C16/52
摘要： In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.
摘要翻译：在一些实施例中，用于可变衬底温度控制的装置可以包括可沿衬底支撑件的中心轴线移动的加热器; 围绕所述加热器设置的密封环，所述密封环被配置为与设置在所述加热器上方的阴影环接合以形成密封; 多个间隔销，其构造成支撑基板并且设置在形成在所述加热器中的多个通孔内，所述多个间隔销可平行于所述中心轴线移动，其中所述多个间隔销控制所述基板和所述基板之间的第一距离加热器和衬底和阴影环之间的第二距离; 以及弹性元件，其设置在所述密封环下方以将所述密封环朝向所述加热器的后侧表面偏置。

3. 发明申请

US20140008349A1 SUBSTRATE SUPPORT FOR SUBSTRATE BACKSIDE CONTAMINATION CONTROL 有权
标题翻译：基板支撑底板污染控制
公开(公告)号：US20140008349A1
公开(公告)日：2014-01-09
申请号：US13540710
申请日：2012-07-03
申请人： GWO-CHUAN TZU , OLKAN CUVALCI , YU CHANG , XIAOXIONG YUAN
发明人： GWO-CHUAN TZU , OLKAN CUVALCI , YU CHANG , XIAOXIONG YUAN
IPC分类号： H05B3/30 , H05B3/06
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6875 , H05B3/143
摘要： Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.
摘要翻译：本文提供了基板支撑件的实施例。在一些实施例中，衬底支撑件可以包括用于支撑衬底的第一铝板，所述第一铝板具有嵌入其中的多个加热元件以提供多个加热区域; 设置在第一铝板下方并支撑第一铝板的第二铝板; 设置在第二铝板下方并支撑第二铝板的第三铝板; 设置在第一铝板顶上的非金属环; 以及多个间隔件，其具有设置在所述第一铝板的表面上方的上部，其中所述非金属环和所述多个间隔件将所述基板支撑在所述第一铝板的上方。

4. 发明申请

US20130001215A1 SUBSTRATE SUPPORT WITH SUBSTRATE HEATER AND SYMMETRIC RF RETURN 有权
标题翻译：基板支撑与基板加热器和对称RF返回
公开(公告)号：US20130001215A1
公开(公告)日：2013-01-03
申请号：US13173471
申请日：2011-06-30
申请人： YU CHANG , GWO-CHUAN TZU , ANQING CUI , WILLIAM W. KUANG , OLKAN CUVALCI
发明人： YU CHANG , GWO-CHUAN TZU , ANQING CUI , WILLIAM W. KUANG , OLKAN CUVALCI
IPC分类号： F27D11/02
CPC分类号： F27B17/0025 , H01J37/32091 , H01J37/32715 , H01L21/67103 , H01L21/67248
摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.
摘要翻译：本文提供了用于处理基板的装置。在一些实施例中，衬底支撑件包括衬底支撑表面和轴; 设置在所述衬底支撑件中的RF电极，靠近所述衬底支撑表面以从RF源接收RF电流; 设置在所述基板支撑表面附近的加热器，以在设置在所述基板支撑表面上时向所述基板提供热量，所述加热器具有一个或多个导线以向所述加热器提供电力; 当设置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部体积的导电元件，所述一个或多个导电线和所述热电偶设置穿过所述内部体积，所述导电元件耦合到所述RF电极，并且当RF电流流过所述内部体积时具有约零的电场导电元件。

5. 发明申请

US20110114020A1 LID ASSEMBLY FOR A PROCESSING SYSTEM TO FACILITATE SEQUENTIAL DEPOSITION TECHNIQUES 审中-公开
标题翻译：用于加工顺序沉积技术的加工系统的组装
公开(公告)号：US20110114020A1
公开(公告)日：2011-05-19
申请号：US13012341
申请日：2011-01-24
申请人： GWO-CHUAN TZU , Salvador P. Umotoy
发明人： GWO-CHUAN TZU , Salvador P. Umotoy
IPC分类号： C23C16/52 , C23C16/455 , C23C16/50
CPC分类号： C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45525 , C23C16/45538 , C23C16/45561 , C23C16/50 , H01L21/67017
摘要： Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system for sequential deposition or atomic layer deposition (ALD) is provided and includes a lid assembly coupled with a chamber housing, wherein the lid assembly contains a lid having a plurality of controllable flow channels extending from an upper lid surface, through the lid, and to a lower lid surface, a gas manifold disposed on the lid, and at least one valve coupled with the gas manifold and adapted to control a gas flow through one of the controllable flow channels. The substrate processing system further contains a gas reservoir disposed between a first gas line and a second gas line, and the gas reservoir is fluidly connected to the gas manifold by the second gas line.
摘要翻译：本发明的实施例一般涉及用于处理衬底的装置。在一个实施例中，提供了用于顺序沉积或原子层沉积（ALD）的衬底处理系统，并且包括与室壳体耦合的盖组件，其中盖组件包含具有多个可控流动通道的盖，该可控流动通道从上盖表面，通过盖子和下盖表面，设置在盖子上的气体歧管，以及与气体歧管连接并且适于控制通过可控流动通道之一的气体流动的至少一个阀。基板处理系统还包括设置在第一气体管线和第二气体管线之间的气体储存器，并且气体储存器通过第二气体管线流体地连接到气体歧管。

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