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2. 发明申请

US20140361298A1 LITHOGRAPHY PROCESS MONITORING OF LOCAL INTERCONNECT CONTINUITY 有权
标题翻译：本地互连连续性的地震过程监测
公开(公告)号：US20140361298A1
公开(公告)日：2014-12-11
申请号：US13913007
申请日：2013-06-07
申请人： GLOBAL FOUNDRIES, INC. , INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Hyun-Jin CHO , Tenko YAMASHITA , Chun-chen YEH , Hui ZANG
IPC分类号： H01L21/66
CPC分类号： H01L22/14 , H01L22/12 , H01L22/34
摘要： Disclosed is a novel system and method to form local interconnects in a continuity test structure. The method begins with a first set of transistor gate lines and a second set of transistor gate lines are formed. Next, a first group of two or more local interconnect lines landing on transistor gates and formed substantially perpendicular to the first set of transistor gate lines and electrically coupled therewith is formed using a first lithography pass. A second group of two or more local interconnect lines landing and formed substantially perpendicular to the second set of transistor gate lines and electrically coupled therewith is formed during second lithography pass. For some technologies, a third set of transistor gate lines is formed along with a third group using a third lithography pass.
摘要翻译：公开了一种在连续性测试结构中形成局部互连的新型系统和方法。该方法由第一组晶体管栅极线开始，并且形成第二组晶体管栅极线。接下来，使用第一光刻通道形成第一组两个或更多个局部互连线，其位于晶体管栅极上并且基本上垂直于第一组晶体管栅极线形成并与之电耦合的局部互连线。在第二光刻通过期间形成第二组两个或更多个局部互连线，其基本垂直于第二组晶体管栅极线并与之电耦合。对于一些技术，使用第三光刻通道与第三组一起形成第三组晶体管栅极线。

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