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1. 发明授权

US5285103A Structure and method for contacts in CMOS devices 失效
标题翻译： CMOS器件中触点的结构和方法
公开(公告)号：US5285103A
公开(公告)日：1994-02-08
申请号：US864502
申请日：1992-04-07
申请人： Fusen Chen , Frank R. Bryant , Girish Dixit
发明人： Fusen Chen , Frank R. Bryant , Girish Dixit
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L29/34 , H01L29/78
CPC分类号： H01L21/76802 , Y10S148/133
摘要： The method for fabrication of openings in semiconductor devices to improve metal step coverage includes forming an active region over a substrate. A metal oxide layer is then formed over the source/drain region. An insulating layer is formed over the metal oxide layer. A photoresist layer is formed over the insulating layer, and patterned to form an opening, exposing a portion of the insulating. The insulating layer is then etched to expose a portion of the metal oxide layer. The photoresist layer is removed and the insulating layer is reflowed so as to form rounded corners at the opening of the insulating layer. The exposed portion of the metal oxide layer is removed to expose a portion of the active region.
摘要翻译：用于制造半导体器件中的开口以改善金属台阶覆盖的方法包括在衬底上形成有源区。然后在源极/漏极区域上形成金属氧化物层。在金属氧化物层上形成绝缘层。在绝缘层上形成光致抗蚀剂层，并被图案化以形成开口，暴露绝缘层的一部分。然后蚀刻绝缘层以暴露金属氧化物层的一部分。去除光致抗蚀剂层，并且绝缘层被回流以便在绝缘层的开口处形成圆角。去除金属氧化物层的暴露部分以暴露活性区域的一部分。

2. 发明授权

US5164340A Structure and method for contacts in CMOS devices 失效
标题翻译： CMOS器件中的接触结构和方法
公开(公告)号：US5164340A
公开(公告)日：1992-11-17
申请号：US719791
申请日：1991-06-24
申请人： Fusen Chen , Frank R. Bryant , Girish Dixit
发明人： Fusen Chen , Frank R. Bryant , Girish Dixit
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76802 , Y10S148/133
摘要： The method for fabrication of openings in semiconductor devices to improve metal step coverage includes forming an active region over a substrate. A metal oxide layer is then formed over the source/drain region. An insulating layer is formed over the metal oxide layer. A photoresist layer is formed over the insulating layer, and patterned to form an opening, exposing a portion of the insulating. The insulating layer is then etched to expose a portion of the metal oxide layer. The photoresist layer is removed and the insulating layer is reflowed so as to form rounded corners at the opening of the insulating layer. The exposed portion of the metal oxide layer is removed to expose a portion of the active region.

3. 发明申请

US20050056536A1 Multi-step magnetron sputtering process 有权
标题翻译：多级磁控溅射工艺
公开(公告)号：US20050056536A1
公开(公告)日：2005-03-17
申请号：US10934231
申请日：2004-09-03
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/34 , C23C14/04 , C23C14/16 , C23C14/32 , C23C14/35 , H01J37/34 , H01L21/203 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

4. 发明授权

US06277249B1 Integrated process for copper via filling using a magnetron and target producing highly energetic ions 失效
标题翻译：通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶
公开(公告)号：US06277249B1
公开(公告)日：2001-08-21
申请号：US09518180
申请日：2000-03-02
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形槽。位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场，密度等离子体从槽的顶部延伸到底部。大的等离子体体积增加了溅射的金属原子将被电离的可能性。磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

5. 发明授权

US06787006B2 Operating a magnetron sputter reactor in two modes 有权
标题翻译：以两种模式操作磁控溅射反应器
公开(公告)号：US06787006B2
公开(公告)日：2004-09-07
申请号：US10197680
申请日：2002-07-16
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

6. 发明授权

US06451177B1 Vault shaped target and magnetron operable in two sputtering modes 失效
标题翻译：拱形靶和磁控管可在两种溅射模式下工作
公开(公告)号：US06451177B1
公开(公告)日：2002-09-17
申请号：US09703601
申请日：2000-11-01
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。优选地，磁控管包括设置在两个拱顶侧壁之后的相对极性的环形磁体和沿拱顶顶部扫描的具有相对极性的嵌套磁体的小型闭合不平衡磁控管。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

7. 发明授权

US06274008B1 Integrated process for copper via filling 失效
标题翻译：铜通过灌装的综合工艺
公开(公告)号：US06274008B1
公开(公告)日：2001-08-14
申请号：US09677946
申请日：2000-10-02
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1434
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

8. 发明授权

US06991709B2 Multi-step magnetron sputtering process 有权
标题翻译：多级磁控溅射工艺
公开(公告)号：US06991709B2
公开(公告)日：2006-01-31
申请号：US10934231
申请日：2004-09-03
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok K. Sinha
IPC分类号： C23C14/34
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

9. 发明授权

US5391520A Method for forming local interconnect for integrated circuits 失效
标题翻译：用于形成集成电路局部互连的方法
公开(公告)号：US5391520A
公开(公告)日：1995-02-21
申请号：US139268
申请日：1993-10-18
申请人： Fusen Chen , Fu-Tai Liou , Girish Dixit
发明人： Fusen Chen , Fu-Tai Liou , Girish Dixit
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532 , H01L21/283 , H01L21/302
CPC分类号： H01L23/53257 , H01L21/76889 , H01L2924/0002 , Y10S148/019 , Y10S257/915
摘要： A method for fabrication of local interconnects in an integrated circuit, and an integrated circuit formed according to the same, is disclosed. According to the disclosed embodiment, a first and a second conductive structure are formed over the integrated circuit. An insulating layer is formed over the integrated. A first photoresist layer is formed over the insulating layer, patterned and developed. The insulating layer is etched to expose selected regions of the first and second conductive structures. A refractory metal layer is formed over the integrated circuit. A barrier layer is formed over the refractory metal layer, and optionally a refractory metal silicide layer is formed over the barrier layer. A second photoresist layer is formed over the barrier layer, patterned and developed. The refractory metal layer and barrier layer, and the refractory metal silicide layer if formed, are etched to define a conductive interconnect between the exposed selected regions of the first and second conductive structures.
摘要翻译：公开了一种用于制造集成电路中的局部互连的方法，以及根据该集成电路形成的集成电路。根据所公开的实施例，在集成电路上形成第一和第二导电结构。在整合上形成绝缘层。第一光致抗蚀剂层形成在绝缘层上，被图案化和显影。蚀刻绝缘层以暴露第一和第二导电结构的选定区域。在集成电路上形成难熔金属层。在耐火金属层之上形成阻挡层，并且可选地在阻挡层上形成难熔金属硅化物层。第二光致抗蚀剂层形成在阻挡层上，被图案化和显影。难熔金属层和阻挡层以及如果形成的难熔金属硅化物层被蚀刻以在第一和第二导电结构的暴露的选定区域之间限定导电互连。

10. 发明申请

US20070095654A1 Controlled multi-step magnetron sputtering process 审中-公开
标题翻译：受控多级磁控溅射工艺
公开(公告)号：US20070095654A1
公开(公告)日：2007-05-03
申请号：US11636751
申请日：2006-12-11
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Wei Wang , Ashok Sinha
IPC分类号： C23C14/00
CPC分类号： H01L21/76844 , C23C14/046 , C23C14/165 , C23C14/185 , C23C14/225 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3452 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
摘要翻译：在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。目标具有面向待溅射涂覆的晶片的环形保险库。位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。前两个步骤也可以与阻隔金属一起使用。

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