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1. 发明授权

US08222158B2 Electronic device, method of manufacturing the same, display and sensor 有权
标题翻译：电子设备，制造方法，显示和传感器
公开(公告)号：US08222158B2
公开(公告)日：2012-07-17
申请号：US12832077
申请日：2010-07-08
申请人： Fumihiko Mochizuki , Atsushi Tanaka
发明人： Fumihiko Mochizuki , Atsushi Tanaka
IPC分类号： H01L21/302
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.
摘要翻译：一种制造电子器件的方法包括：制备包括衬底的膜附着衬底和包含In，Ga和Zn的氧化物半导体膜以及在衬底上依次提供包含W或Mo中的至少一种的金属膜 ; 在主要成分为过氧化氢的蚀刻液中，使金属膜与氧化物半导体膜之间的蚀刻选择比（金属膜/氧化物半导体膜的蚀刻速度）的条件，湿式蚀刻附着有膜的基板的金属膜，氧化物半导体膜的蚀刻速度）为100以上。

2. 发明授权

US08884272B2 Amorphous oxide semiconductor material, field-effect transistor, and display device 有权
标题翻译：无定形氧化物半导体材料，场效应晶体管和显示装置
公开(公告)号：US08884272B2
公开(公告)日：2014-11-11
申请号：US12853338
申请日：2010-08-10
申请人： Takeshi Hama , Masayuki Suzuki , Atsushi Tanaka , Fumihiko Mochizuki
发明人： Takeshi Hama , Masayuki Suzuki , Atsushi Tanaka , Fumihiko Mochizuki
IPC分类号： H01L29/08 , H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/3248 , H01L27/3262 , H01L2251/5338
摘要： There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b −5b+8 and 1≦c≦2.
摘要翻译：提供了包括In，Ga和Zn的非晶氧化物半导体的非晶氧化物半导体材料，其中当In：Ga：Zn = a：b：c表示氧化物半导体的元素组成比时，元素组成比由 a + b = 2和b <2和c <4b-3.2的范围，c> -5b + 8和1＆nlE; c＆nlE; 2。

3. 发明授权

US09454197B2 Controller and semiconductor system 有权
标题翻译：控制器和半导体系统
公开(公告)号：US09454197B2
公开(公告)日：2016-09-27
申请号：US13982385
申请日：2011-01-28
申请人： Atsushi Tanaka , Hiroshi Murakami
发明人： Atsushi Tanaka , Hiroshi Murakami
IPC分类号： G06F1/32 , G06F1/26 , G06F1/00 , H02M3/155 , H02M3/157
CPC分类号： G06F1/28 , G06F1/26 , G06F1/266 , G06F1/32 , H02M3/155 , H02M3/157 , H02M3/158
摘要： A controller is formed as one chip, and controls a voltage regulator that supplies a power supply voltage to a CPU. The controller includes: an input unit for receiving a monitor voltage for monitoring the power supply voltage applied to the CPU; a control unit for detecting that the power supply voltage is decreased to a target voltage by the monitor voltage with the voltage regulator being in OFF state in a discharge mode; and an output unit for outputting a result signal indicating to make transition to a normal mode, when the power supply voltage has reached the target voltage. The control unit includes a calculation circuit, which is operated in accordance with a program. The calculation circuit is provided between the input unit and the output unit.
摘要翻译：控制器形成为一个芯片，并且控制向CPU提供电源电压的电压调节器。控制器包括：输入单元，用于接收用于监视施加到CPU的电源电压的监视电压; 控制单元，用于在放电模式下通过所述电压调节器处于截止状态来检测所述电源电压被所述监视电压降低到目标电压; 以及输出单元，用于当电源电压达到目标电压时，输出指示转换到正常模式的结果信号。控制单元包括根据程序操作的计算电路。计算电路设置在输入单元和输出单元之间。

4. 发明授权

US09387464B2 Iron oxide-zirconia composite oxide and method for producing same, and exhaust gas purification catalyst 有权
标题翻译：氧化铁 - 氧化锆复合氧化物及其制造方法以及废气净化催化剂
公开(公告)号：US09387464B2
公开(公告)日：2016-07-12
申请号：US14384283
申请日：2013-04-26
申请人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
发明人： Masahide Miura , Atsushi Tanaka , Takahiro Suzuki , Tadashi Suzuki , Toshitaka Tanabe , Naoki Takahashi
IPC分类号： B01J23/00 , B01J23/08 , B01J23/10 , B01J23/40 , B01J23/42 , B01J23/44 , B01J23/56 , B01J23/70 , B01J23/74 , B01J23/89 , B01J35/00 , B01J23/745 , B01J23/83 , C01G25/00 , C01G49/00 , B01J37/02 , B01J37/03
CPC分类号： B01J23/894 , B01J21/066 , B01J23/10 , B01J23/745 , B01J23/83 , B01J35/0006 , B01J35/002 , B01J37/0248 , B01J37/03 , C01G25/00 , C01G49/0018 , C01G49/0054 , C01P2002/72 , C01P2004/03 , C01P2004/32 , C01P2004/45 , C01P2004/61 , C01P2006/12
摘要： A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, is not greater than 20.
摘要翻译：提供具有高储氧能力的复合氧化物，而不使用铈。复合氧化物是含有铁，锆和稀土元素的氧化铁 - 氧化锆复合氧化物。 Fe2O3，ZrO2和稀土类元素的氧化物的总含量为90质量％以上，Fe 2 O 3的氧化铁含量为10〜90质量％，协方差COV的绝对值在大气中在大气压900℃以上焙烧5小时以上的复合氧化物（Fe，Zr + X）不大于20。

5. 发明申请

US20130332706A1 ELECTRONIC DEVICE, ELECTRONIC DEVICE COOPERATING SYSTEM, AND ELECTRONIC DEVICE CONTROLLING METHOD 审中-公开
标题翻译：电子设备，电子设备合作系统和电子设备控制方法
公开(公告)号：US20130332706A1
公开(公告)日：2013-12-12
申请号：US14001026
申请日：2012-05-14
申请人： Atsushi Tanaka
发明人： Atsushi Tanaka
IPC分类号： G06F9/00
CPC分类号： G06F9/00 , G06F13/385
摘要： There are included a communication part performing communication with other device; a command managing part transmitting a command of an own device to other device and receiving a command of other device to acquire the command of other device by the communication part, and managing the command of the own device and the command of other device; and a command processing part executing processing of a function corresponding to the command of the own device by the own device when a command selected from the commands managed by the command managing part is the command of the own device, and executing processing of a function corresponding to the command of other device by the other device when the command selected is the command of the other device.
摘要翻译：包括与其他设备进行通信的通信部件; 命令管理部，将自身设备的命令发送到其他设备，并接收其他设备的命令以通过通信部分获取其他设备的命令，并管理自身设备的命令和其他设备的命令; 以及命令处理部，当从由命令管理部管理的命令中选择的命令为自身装置的命令时，通过自身装置执行与本装置的命令对应的功能的处理，并执行对应的功能的处理当所选择的命令是另一设备的命令时，由另一设备指定其他设备。

6. 发明申请

US20120280826A1 MANAGEMENT APPARATUS FOR MANAGING A CONTENT DISPLAY CHANGE TIME ON A DISPLAY APPARATUS AND CONTENT INFORMATION TO BE TRANSMITTED TO A TERMINAL 有权
标题翻译：用于管理显示设备上的内容显示更改时间的管理设备和要传输到终端的内容信息
公开(公告)号：US20120280826A1
公开(公告)日：2012-11-08
申请号：US13552092
申请日：2012-07-18
申请人： Atsushi Tanaka
发明人： Atsushi Tanaka
IPC分类号： G08B21/00
CPC分类号： H04N7/17318 , H04N21/4126 , H04N21/4143 , H04N21/4182 , H04N21/4722 , H04N21/6582
摘要： A management apparatus for managing a content display change time on a display apparatus and content information to be transmitted to a terminal determines the content information to be transmitted to the terminal on the basis of a reception time of a content information request command transmitted from the terminal and the content display change time on the display apparatus.
摘要翻译：用于管理显示装置上的内容显示改变时间的管理装置和要发送到终端的内容信息根据从终端发送的内容信息请求命令的接收时间来确定要发送到终端的内容信息和显示装置上的内容显示改变时间。

7. 发明授权

US08299461B2 Thin film transistor, method of producing the same, electrooptic apparatus, and sensor 有权
标题翻译：薄膜晶体管，其制造方法，电光设备和传感器
公开(公告)号：US08299461B2
公开(公告)日：2012-10-30
申请号：US12797632
申请日：2010-06-10
申请人： Atsushi Tanaka , Takeshi Hama , Masayuki Suzuki
发明人： Atsushi Tanaka , Takeshi Hama , Masayuki Suzuki
IPC分类号： H01L29/12
CPC分类号： H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0−x):x:y, wherein 0.0
摘要翻译：薄膜晶体管包括：基板; 并且在基板上具有用作有源层并且包含In，Ga和Zn的氧化物半导体膜，栅电极，栅绝缘膜，源电极和漏电极，其中，当摩尔比 In，Ga和Zn表示为In：Ga：Zn =（2.0-x）：x：y，其中0.0

8. 发明授权

US07983605B2 Developing member with urethane resin and silicone surface layer 有权
标题翻译：具有聚氨酯树脂和硅树脂表面层的显影剂
公开(公告)号：US07983605B2
公开(公告)日：2011-07-19
申请号：US11845489
申请日：2007-08-27
申请人： Minoru Nakamura , Ryota Kashiwabara , Atsushi Tanaka
发明人： Minoru Nakamura , Ryota Kashiwabara , Atsushi Tanaka
IPC分类号： G03G15/08
CPC分类号： G03G15/0818 , G03G2215/0634 , G03G2215/0861
摘要： A developing member is disclosed which can lessen the occurring of banding. The developing member has a shaft member, an elastic layer provided on the shaft member, and a resin layer provided on the surface, wherein the resin layer contains a urethane resin and a non-reactive silicone compound, and the non-reactive silicone compound has a polyether moiety whose total number of carbon atoms ranges from 3 to 9.
摘要翻译：公开了一种可以减少条纹发生的显影部件。显影部件具有轴构件，设置在轴构件上的弹性层和设置在表面上的树脂层，其中树脂层包含聚氨酯树脂和非反应性硅氧烷化合物，并且非反应性硅氧烷化合物具有总碳原子数为3〜9的聚醚部分。

9. 发明申请

US20110060162A1 NANO-CARBON MATERIAL PRODUCTION APPARATUS AND METHOD 有权
标题翻译：纳碳材料生产设备和方法
公开(公告)号：US20110060162A1
公开(公告)日：2011-03-10
申请号：US12991197
申请日：2009-05-28
申请人： Kiyoshi Tatsuhara , Tomoaki Sugiyama , Atsushi Tanaka , Toshihiko Setoguchi
发明人： Kiyoshi Tatsuhara , Tomoaki Sugiyama , Atsushi Tanaka , Toshihiko Setoguchi
IPC分类号： C07C51/00 , B01J8/18 , B01J8/00 , C07C45/00 , C07C41/01 , C07C29/00 , B82Y40/00
CPC分类号： B82Y40/00 , B01J8/005 , B01J8/1836 , B01J2208/00592 , B01J2208/00681 , B01J2219/00006 , B82Y30/00 , C01B32/162
摘要： Included are a nano-carbon material production unit for producing a nano-carbon material using a fluidized catalyst formed by granulating a carrier supporting an active component, an acid treatment unit for dissolving and separating a catalyst by an acid solution by feeding a catalyst-containing nano-carbon material into the acid solution, and a pH adjustment unit, which is an anti-agglomeration treatment unit, provided on a downstream side of the acid treatment unit, for performing an anti-agglomeration treatment to prevent agglomeration among nano-carbons due to repulsion caused by dissociation among oxygen-containing functional groups added to the nano-carbon material.
摘要翻译：包括使用流化催化剂制造纳米碳材料的纳米碳材料生产单元，所述流化催化剂通过使支撑活性组分的载体成粒而形成，酸处理单元，用于通过酸溶液溶解和分离催化剂，将酸性溶液中的纳米碳材料和作为抗附聚处理单元的pH调节单元设置在酸处理单元的下游侧，进行抗附聚处理以防止纳米碳之间的附聚由添加到纳米碳材料中的含氧官能团之间的离解引起的排斥。

10. 发明授权

US07804088B2 Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device 有权
标题翻译：半导体装置，半导体装置的制造方法，显示装置以及显示装置的制造方法
公开(公告)号：US07804088B2
公开(公告)日：2010-09-28
申请号：US12418991
申请日：2009-04-06
申请人： Atsushi Tanaka , Ken-ichi Umeda , Kohei Higashi , Maki Nangu
发明人： Atsushi Tanaka , Ken-ichi Umeda , Kohei Higashi , Maki Nangu
IPC分类号： H01L33/00
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
摘要翻译：半导体器件包括衬底和具有沟道区的半导体层，沟道区由满足Vc / Va> 4的氧化物半导体制成，其中Vc是结晶成分的体积比，Va是非结晶成分的体积比，晶体成分。

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