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1. 发明授权

US09174316B2 Method of manufacturing roller 有权
标题翻译：滚筒制造方法
公开(公告)号：US09174316B2
公开(公告)日：2015-11-03
申请号：US13521775
申请日：2011-01-21
申请人： Kohei Higashi , Satoshi Sugitatsu
发明人： Kohei Higashi , Satoshi Sugitatsu
IPC分类号： B21K1/02 , B23P17/00 , B23P13/02 , B23P23/02 , B24B7/16 , B23P15/00
CPC分类号： B23P13/02 , B23P15/003 , B23P23/02 , B24B7/16 , Y10T29/49544
摘要： A workpiece is fixed by a retracting mechanical chuck mounted on a spindle head of a five-axis control machining center. The apparent outer diameter of the workpiece is increased by a jig. Clamp surfaces of the jaws and a support surface of the jig are formed on the machining center. A cutting tool is mounted on a spindle by an automatic tool exchanger. The workpiece is rotated about an axis to grind an end surface of the workpiece to approximately a predetermined target shape, which is a spherical surface. A grinder is then mounted on the spindle by the automatic tool exchanger, and the grinder is set relative to the workpiece by five-axis control such that the inclination angle, the offset amount, etc. satisfy a predetermined relationship according to the desired grinding. The grinder is then fed in the Z-axis direction to form the spherical surface by grinding.
摘要翻译：工件通过安装在五轴控制加工中心的主轴头上的回缩机械夹具固定。通过夹具增加工件的外观外径。夹具的夹紧表面和夹具的支撑表面形成在加工中心上。切割工具通过自动换刀器安装在主轴上。工件围绕轴线旋转，以将工件的端面磨削成大致为球面的预定目标形状。然后通过自动刀具交换器将研磨机安装在主轴上，并且通过五轴控制将研磨机相对于工件设定，使得倾斜角度，偏移量等根据期望的研磨满足预定关系。然后将研磨机沿Z轴方向进给，通过研磨形成球面。

2. 发明申请

US20120285018A1 METHOD OF MANUFACTURING ROLLER 有权
标题翻译：制造滚子的方法
公开(公告)号：US20120285018A1
公开(公告)日：2012-11-15
申请号：US13521775
申请日：2011-01-21
申请人： Kohei Higashi , Satoshi Sugitatsu
发明人： Kohei Higashi , Satoshi Sugitatsu
IPC分类号： B23P15/00
CPC分类号： B23P13/02 , B23P15/003 , B23P23/02 , B24B7/16 , Y10T29/49544
摘要： A workpiece is fixed by a retracting mechanical chuck mounted on a spindle head of a five-axis control machining center. The apparent outer diameter of the workpiece is increased by a jig. Clamp surfaces of the jaws and a support surface of the jig are formed on the machining center. A cutting tool is mounted on a spindle by an automatic tool exchanger. The workpiece is rotated about an axis to grind an end surface of the workpiece to approximately a predetermined target shape, which is a spherical surface. A grinder is then mounted on the spindle by the automatic tool exchanger, and the grinder is set relative to the workpiece by five-axis control such that the inclination angle, the offset amount, etc. satisfy a predetermined relationship according to the desired grinding. The grinder is then fed in the Z-axis direction to form the spherical surface by grinding.
摘要翻译：工件通过安装在五轴控制加工中心的主轴头上的回缩机械夹具固定。通过夹具增加工件的外观外径。夹具的夹紧表面和夹具的支撑表面形成在加工中心上。切割工具通过自动换刀器安装在主轴上。工件围绕轴线旋转，以将工件的端面磨削成大致为球面的预定目标形状。然后通过自动刀具交换器将研磨机安装在主轴上，并且通过五轴控制使研磨机相对于工件设定，使得倾斜角度，偏移量等根据期望的研磨满足预定关系。然后将研磨机沿Z轴方向进给，通过研磨形成球面。

3. 发明授权

US07851803B2 Semiconductor device, manufacturing method of semiconductor device, and display device 有权
标题翻译：半导体装置，半导体装置的制造方法以及显示装置
公开(公告)号：US07851803B2
公开(公告)日：2010-12-14
申请号：US12418671
申请日：2009-04-06
申请人： Atsushi Tanaka , Ken-Ichi Umeda , Kohei Higashi , Maki Nangu
发明人： Atsushi Tanaka , Ken-Ichi Umeda , Kohei Higashi , Maki Nangu
IPC分类号： H01L29/10
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1292 , H01L29/7869 , H01L51/0004 , H01L51/0558
摘要： A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L≧2a is satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W≧2b is satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.
摘要翻译：半导体器件包括衬底和通过印刷在衬底上形成的沟道区，其中满足L≥2a的关系，其中L是沟道区的沟道长度，a是图案尺寸和图案间的最小尺寸与限定通道长度L的图案在同一层中的尺寸; 并且满足W≥2B的关系，其中W是沟道区的沟道宽度，b是与限定沟道宽度W的图案在同一层中的图案尺寸和图案间尺寸中的最小尺寸。

4. 发明申请

US20090294964A1 ELECTRICALLY-CONDUCTIVE INORGANIC COATING, METHOD FOR PRODUCING THE COATING, CIRCUIT BOARD, AND SEMICONDUCTOR APPARATUS 有权
标题翻译：电导体无机涂料，涂料，电路板和半导体装置的制造方法
公开(公告)号：US20090294964A1
公开(公告)日：2009-12-03
申请号：US12473746
申请日：2009-05-28
申请人： Kohei Higashi , Atsushi Tanaka
发明人： Kohei Higashi , Atsushi Tanaka
IPC分类号： H01L23/48 , B05D5/12 , B05D3/06 , H01L21/321 , H05K1/02
CPC分类号： H01L29/7869 , C23C18/08 , C23C18/1216 , C23C18/1233 , C23C18/127 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01L21/4867 , H01L23/4985 , H01L2924/0002 , H01L2924/12044 , H05K1/0393 , H05K1/092 , H05K3/105 , H05K3/1241 , H05K3/1283 , H05K2201/0224 , H05K2203/107 , H05K2203/1131 , H05K2203/1163 , H01L2924/00
摘要： A method for producing an electrically-conductive inorganic coating includes depositing, on a substrate, a coating-precursor containing a plurality of inorganic particles and at least one kind of organic component by a liquid-phase method by using a material-liquid containing the inorganic particles and an organic solvent. The inorganic particles are coated with a dispersant binding to the surfaces of the inorganic particles by chemical bonds that can be broken by oxidation. Further, the method includes oxidizing the coating-precursor at a temperature exceeding 100° C., and that is less than or equal to the pyrolysis initiation temperature of an organic component that has the highest pyrolysis initiation temperature among the at least one kind of organic component and less than or equal to the heat-resistance temperature of the substrate, thereby breaking the chemical bonds to eliminate the dispersant from the surfaces, and decomposing the at least one kind of organic component.
摘要翻译：一种导电性无机涂层的制造方法，其特征在于，在基材上使用含有无机粒子的材料液，通过液相法将含有多种无机粒子和至少一种有机成分的涂料前体颗粒和有机溶剂。无机颗粒用可通过氧化破坏的化学键与分散剂结合的分散剂涂覆。此外，该方法包括在超过100℃的温度下氧化涂层前体，并且小于或等于至少一种有机物中具有最高热解引发温度的有机组分的热解开始温度并且小于或等于基板的耐热温度，从而破坏化学键以从表面消除分散剂，并分解至少一种有机组分。

5. 发明申请

US20090035536A1 PROCESS FOR PRODUCING THIN-FILM DEVICE, AND DEVICES PRODUCED BY THE PROCESS 审中-公开
标题翻译：用于制造薄膜装置的方法以及由该方法生产的装置
公开(公告)号：US20090035536A1
公开(公告)日：2009-02-05
申请号：US12181897
申请日：2008-07-29
申请人： Atsushi Tanaka , Kohei Higashi , Kenichi Umeda , Hiroshi Sunagawa , Katsuhiro Kohda
发明人： Atsushi Tanaka , Kohei Higashi , Kenichi Umeda , Hiroshi Sunagawa , Katsuhiro Kohda
IPC分类号： G03G7/00 , B05D3/00
CPC分类号： H01L29/78603 , H01L29/66757 , Y10T428/24802
摘要： In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.
摘要翻译：在制造薄膜器件的方法中，在包含树脂材料作为主要成分的衬底上形成热缓冲层，并且在衬底的至少一个区域上形成光切割层，不要形成要退火的非单晶膜，其中通过减少到达基板的短波长光的比例，光切割层防止从短波长光到基板的损坏。此后，将要退火的非单晶膜以具有热缓冲层的衬底上的图案形成，并且通过用短波长的光照射非单晶膜以形成无机膜，从而退火非单晶膜。

6. 发明授权

US08278136B2 Semiconductor device, method for producing the same, sensor and electro-optical device 有权
标题翻译：半导体装置及其制造方法，传感器和电光装置
公开(公告)号：US08278136B2
公开(公告)日：2012-10-02
申请号：US12474931
申请日：2009-05-29
申请人： Atsushi Tanaka , Kenichi Umeda , Kohei Higashi , Maki Nangu
发明人： Atsushi Tanaka , Kenichi Umeda , Kohei Higashi , Maki Nangu
IPC分类号： H01L51/40 , H01L21/00 , H01L21/44 , B05D5/12 , C23C14/30
CPC分类号： H01L21/28194 , H01L29/7869
摘要： A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.
摘要翻译：在基板上依次形成栅电极，栅极绝缘膜和无机氧化物膜，并且形成源电极和漏电极以部分地覆盖无机氧化物膜。然后，进行氧化处理以降低未被电极覆盖的无机氧化物膜的区域的载流子密度，并用作半导体器件的沟道区域。

7. 发明授权

US08202365B2 Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film 有权
标题翻译：用于制备取向无机晶体膜的方法和使用取向无机晶体膜的半导体器件
公开(公告)号：US08202365B2
公开(公告)日：2012-06-19
申请号：US12337072
申请日：2008-12-17
申请人： Kenichi Umeda , Hiroyuki Hirai , Atsushi Tanaka , Katsuhiro Kohda , Kohei Higashi , Hiroshi Sunagawa
发明人： Kenichi Umeda , Hiroyuki Hirai , Atsushi Tanaka , Katsuhiro Kohda , Kohei Higashi , Hiroshi Sunagawa
IPC分类号： C30B1/02
CPC分类号： H01L21/02565 , C30B1/02 , C30B29/22 , H01L21/02422 , H01L21/02554 , H01L21/02628 , H01L29/7869
摘要： In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.
摘要翻译：在制备取向无机结晶膜的方法中，通过液相技术，使用含有原料和有机溶剂的原料溶液，在基板上形成含有无机结晶粒子的非单晶膜，其中无机结晶颗粒具有层状晶体结构并且包含在原料中。然后，通过将非单晶膜加热到等于或高于非单晶膜的结晶温度的温度使非单晶膜结晶，使得部分无机结晶粒子作为晶核。

8. 发明授权

US08114705B2 Electrically-conductive inorganic coating, method for producing the coating, circuit board, and semiconductor apparatus 有权
标题翻译：导电无机涂层，涂层的制造方法，电路板和半导体装置
公开(公告)号：US08114705B2
公开(公告)日：2012-02-14
申请号：US12473746
申请日：2009-05-28
申请人： Kohei Higashi , Atsushi Tanaka
发明人： Kohei Higashi , Atsushi Tanaka
IPC分类号： H01L51/40
CPC分类号： H01L29/7869 , C23C18/08 , C23C18/1216 , C23C18/1233 , C23C18/127 , C23C18/1279 , C23C18/1295 , C23C18/14 , H01L21/4867 , H01L23/4985 , H01L2924/0002 , H01L2924/12044 , H05K1/0393 , H05K1/092 , H05K3/105 , H05K3/1241 , H05K3/1283 , H05K2201/0224 , H05K2203/107 , H05K2203/1131 , H05K2203/1163 , H01L2924/00
摘要： A method for producing an electrically-conductive inorganic coating includes depositing, on a substrate, a coating-precursor containing a plurality of inorganic particles and at least one kind of organic component by a liquid-phase method by using a material-liquid containing the inorganic particles and an organic solvent. The inorganic particles are coated with a dispersant binding to the surfaces of the inorganic particles by chemical bonds that can be broken by oxidation. Further, the method includes oxidizing the coating-precursor at a temperature exceeding 100° C., and that is less than or equal to the pyrolysis initiation temperature of an organic component that has the highest pyrolysis initiation temperature among the at least one kind of organic component and less than or equal to the heat-resistance temperature of the substrate, thereby breaking the chemical bonds to eliminate the dispersant from the surfaces, and decomposing the at least one kind of organic component.
摘要翻译：一种导电性无机涂层的制造方法，其特征在于，在基材上使用含有无机粒子的材料液，通过液相法将含有多种无机粒子和至少一种有机成分的涂料前体颗粒和有机溶剂。无机颗粒用可通过氧化破坏的化学键与分散剂结合的分散剂涂覆。此外，该方法包括在超过100℃的温度下氧化涂层前体，并且小于或等于至少一种有机物中具有最高热解引发温度的有机组分的热解开始温度并且小于或等于基板的耐热温度，从而破坏化学键以从表面消除分散剂，并分解至少一种有机组分。

9. 发明授权

US07824957B2 Method for producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07824957B2
公开(公告)日：2010-11-02
申请号：US12475104
申请日：2009-05-29
申请人： Kenichi Umeda , Atsushi Tanaka , Kohei Higashi , Maki Nangu
发明人： Kenichi Umeda , Atsushi Tanaka , Kohei Higashi , Maki Nangu
IPC分类号： H01L21/423
CPC分类号： H01L21/268 , H01L21/02554 , H01L21/02664 , H01L21/02686 , H01L29/7869
摘要： During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103Ω·cm or more.
摘要翻译：在使用ZnO膜形成半导体器件的有源层的过程中，用紫外脉冲激光对ZnO膜进行激光退火，以降低膜的电阻，然后进行氧化处理以提高电阻率在激光退火后一次具有过低电阻的ZnO膜的通道部分为103Ω·cm·cm以上。

10. 发明申请

US20090250694A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 有权
标题翻译：半导体器件，半导体器件的制造方法和显示器件
公开(公告)号：US20090250694A1
公开(公告)日：2009-10-08
申请号：US12418671
申请日：2009-04-06
申请人： Atsushi TANAKA , Ken-ichi UMEDA , Kohei HIGASHI , Maki NANGU
发明人： Atsushi TANAKA , Ken-ichi UMEDA , Kohei HIGASHI , Maki NANGU
IPC分类号： H01L29/786 , H01L33/00 , H01L21/20
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1292 , H01L29/7869 , H01L51/0004 , H01L51/0558
摘要： A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L≧2a is satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W≧2b is satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.
摘要翻译：半导体器件包括衬底和通过印刷在衬底上形成的沟道区，其中满足L> = 2a的关系，其中L是沟道区的沟道长度，而a是图案尺寸之间的最小尺寸，与限定通道长度L的图案在同一层中的图案尺寸; 并且满足W> = 2b的关系，其中W是沟道区的沟道宽度，b是与定义沟道宽度W的图案在同一层中的图案尺寸和图案间尺寸中的最小尺寸。

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