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1. 发明授权

US06841334B2 Onium salts and positive resist materials using the same 失效
标题翻译：鎓盐和正抗蚀材料使用它们
公开(公告)号：US06841334B2
公开(公告)日：2005-01-11
申请号：US10683107
申请日：2003-10-10
申请人： Fujio Yagihashi , Tomoyoshi Furihata , Jun Watanabe , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
发明人： Fujio Yagihashi , Tomoyoshi Furihata , Jun Watanabe , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
IPC分类号： C07C381/12 , C08K5/36 , C08L25/00 , C08L25/18 , G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30 , G03F7/038
CPC分类号： G03F7/039 , C07C381/12 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.
摘要翻译：公开了由通式（R）3S + M表示的新型鎓盐，其中三个R可以相同或不同，各自为芳基，条件是R的至少一个为叔烷氧基取代的苯基， M是能形成锍盐的阴离子; 和使用所述新型鎓盐作为酸发生剂的高能辐射响应正抗蚀材料。

2. 发明授权

US06667415B1 Tertiary butyl 4,4-bis(4′-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same 失效
标题翻译：叔丁基4,4-双（4'-羟基苯基）戊酸酯衍生物和含有它们的正性抗蚀剂材料
公开(公告)号：US06667415B1
公开(公告)日：2003-12-23
申请号：US08300245
申请日：1994-09-02
申请人： Fujio Yagihashi , Jun Watanabe , Minoru Takamizawa , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
发明人： Fujio Yagihashi , Jun Watanabe , Minoru Takamizawa , Akinobu Tanaka , Yoshio Kawai , Tadahito Matsuda
IPC分类号： C07C6976
CPC分类号： C07C69/734 , C07D309/12 , C07F7/1804 , G03F7/0045 , Y02P20/55
摘要： Disclosed are novel tert-butyl 4,4-bis(4′-hydroxyphenyl)pentanoate derivatives represented by the following general formula (I); wherein R1 represents a protective group which can be readily eliminated under an acidic condition, and R2 represents a hydrogen atom, a lower alkyl group or a lower alkoxy group: and high energy radiation-responsive positive resist materials using said novel derivatives as dissolution inhibitors.
摘要翻译：公开了由以下通式（I）表示的新颖的4,4-双（4'-羟基苯基）戊酸叔丁酯衍生物：其中R 1表示在酸性条件下易于除去的保护基，R 代表氢原子，低级烷基或低级烷氧基;以及使用所述新衍生物作为溶解抑制剂的高能辐射响应正抗蚀材料。

3. 发明授权

US5629134A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5629134A
公开(公告)日：1997-05-13
申请号：US539759
申请日：1995-10-06
申请人： Katsuyuki Oikawa , Toshinobu Ishihara , Fujio Yagihashi , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuyuki Oikawa , Toshinobu Ishihara , Fujio Yagihashi , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： G03F7/004 , G03F7/039 , G03C1/492 , G03C1/494 , G03C1/76
CPC分类号： G03F7/0045 , Y10S430/106
摘要： In a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, an acid generator, and an optional dissolution inhibitor, a salt of a pyridine which may have an alkyl, alkoxy, amino or dialkylamino group with an alkylsulfonic acid, arylsulfonic acid or halogen atom is blended. Because of high sensitivity to deep UV and resolution and elimination of the PED problem causing T-top pattern configuration and the skirting phenomenon, the resist composition is improved in dimensional precision and lends itself to fine patterning.
摘要翻译：在包含有机溶剂，碱溶性树脂，酸产生剂和任选的溶解抑制剂的化学放大型正性抗蚀剂组合物中，可以具有烷基磺酸的烷基，烷氧基，氨基或二烷基氨基的吡啶盐，芳基磺酸酸或卤素原子混合。由于对深UV和分辨率的高灵敏度以及消除引起T顶部图案构型和裙边现象的PED问题，抗蚀剂组合物的尺寸精度提高，并且适合精细图案化。

4. 发明授权

US5624787A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5624787A
公开(公告)日：1997-04-29
申请号：US466690
申请日：1995-06-06
申请人： Satoshi Watanabe , Katsuyuki Oikawa , Toshinobu Ishihara , Akinobu Tanaka , Tadahito Matsuda , Yoshio Kawai
发明人： Satoshi Watanabe , Katsuyuki Oikawa , Toshinobu Ishihara , Akinobu Tanaka , Tadahito Matsuda , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： A chemically amplified, positive resist composition contains a trifluoromethanesulfonic or p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salt and a nitrogenous compound. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
摘要翻译：化学增幅阳性抗蚀剂组合物含有三氟甲磺酸或对甲苯磺酸双或三（对叔丁氧基苯基）锍盐和含氮化合物。该组合物对高能辐射高度敏感，特别是KrF准分子激光器，并且具有高灵敏度，分辨率和等离子体耐蚀刻性，同时产生的抗蚀剂图案是耐热的。

5. 发明授权

US5636004A Projection exposure method and apparatus 失效
标题翻译：投影曝光方法及装置
公开(公告)号：US5636004A
公开(公告)日：1997-06-03
申请号：US515583
申请日：1995-08-16
申请人： Akihiro Ootaka , Yoshio Kawai , Tadahito Matsuda
发明人： Akihiro Ootaka , Yoshio Kawai , Tadahito Matsuda
IPC分类号： G03F7/20 , G03B27/32 , H01L21/30
CPC分类号： G03F7/70058 , G03F7/70333 , G03F7/70475 , G03F7/70883
摘要： In a projection exposure method of irradiating illumination light from an illumination light source onto a photomask made of a transparent substrate with a periodic mask pattern, and projecting the resultant transmitted light from the photomask on a wafer through a projection system, thereby forming an optical image of the mask pattern on the wafer, projection/exposure with respect to the wafer is performed by a main exposure operation and a sub-exposure operation to be performed after the main exposure operation. The main exposure operation is performed by irradiating the photomask with the illumination light whose coherency becomes 0.3 or less when a period L of the mask pattern on the image plane of the optical system is not more than a value obtained by doubling an exposure wavelength .lambda. of the illumination light source, and dividing the resultant value by a numerical aperture of the projection system. The sub-exposure operation is performed by irradiating the photomask with the illumination light having a coherency of 0.3 or less at at least one of positions separated from a position in the main exposure operation in the optical axis direction by .DELTA.=.lambda./[2{1-(1-.lambda..sup.2 /L.sup.2).sup.1/2 }], thereby forming a periodic pattern having a period 1/2 the period L on the wafer.
摘要翻译：在将照明光源的照明光照射到由周期性掩模图案的透明基板构成的光掩模上的投影曝光方法中，通过投影系统将来自光掩模的透过光投射到晶片上，由此形成光学图像通过在主曝光操作之后进行的主曝光操作和副曝光操作来进行相对于晶片的投影/曝光。主曝光操作是通过在光学系统的像面上的掩模图案的周期L不大于通过使光学系统的像面上的曝光波长λ倍增获得的值的情况下照射具有相干性为0.3以下的照明光的光掩模来进行的照明光源，并将得到的值除以投影系统的数值孔径。副曝光操作是通过在与主曝光操作中在光轴方向上的位置分开的至少一个位置处具有0.3或更小的相干性的照明光照射光掩模来执行的，即DELTA =λ/ [2 { 1-（1-lambda 2 / L2）+ E，fra 1/2 + EE}]，从而形成具有周期+ E，fra 1/2 + EE的晶片周期L的周期性图案。

6. 发明授权

US5880169A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5880169A
公开(公告)日：1999-03-09
申请号：US742324
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： G03F7/0045
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团以及正，支链或环状的C 1 -C 20烷基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的烷基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

7. 发明授权

US5679496A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5679496A
公开(公告)日：1997-10-21
申请号：US566703
申请日：1995-12-04
申请人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Youichi Ohsawa , Satoshi Watanabe , Katsuyuki Oikawa , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
IPC分类号： C07C381/12 , G03F7/004 , H01L21/027 , G03F7/26
CPC分类号： G03F7/0045 , C07C381/12 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified positive resist composition contains a novel trifluoromethanesulfonic or p-toluenesulfonic acid sulfonium salt having at least one tert-butoxycarbonylmethoxy group as an acid labile group. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.
摘要翻译：化学放大正型抗蚀剂组合物含有具有至少一个叔丁氧基羰基甲氧基作为酸不稳定基团的新型三氟甲磺酸或对甲苯磺酸锍盐。该组合物对高能辐射高度敏感，特别是KrF准分子激光器，并且具有高灵敏度，分辨率和等离子体耐蚀刻性，同时产生的抗蚀剂图案是耐热的。

8. 发明授权

US5356753A Positive resist material 失效
标题翻译：正抗蚀剂材料
公开(公告)号：US5356753A
公开(公告)日：1994-10-18
申请号：US973398
申请日：1992-11-12
申请人： Motoyuki Yamada , Osamu Watanabe , Akinobu Tanaka , Hiroshi Ban , Yoshio Kawai
发明人： Motoyuki Yamada , Osamu Watanabe , Akinobu Tanaka , Hiroshi Ban , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A positive resists material for high energy-sensitive positive resists which can be developed in aqueous alkali solution, said material comprising (A) a polyhydroxystyrene resin wherein some hydroxyl groups are substituted by t-butoxycarbonyloxy groups, (B) a solution blocking agent, and (C) an onium salt, and being characterized in that said solution blocking agent contains at least one t-butoxycarbonyloxy group per molecule, said onium salt is bis(p-t-butylphenyl) iodinium trifluormethylsulfonate represented by the following formula (1): ##STR1## and the weight proportions of (A), (B), (C) are given by the relations: 0.07.ltoreq.B-.ltoreq.0.40, 0.005.ltoreq.C.ltoreq.0.15, 0.55.ltoreq.A, A+B+C=1. As the resist has low absorption at the exposure wavelength of a KrF exima laser, a fine pattern having vertical walls is easily formed.
摘要翻译：所述材料包含（A）一些羟基被叔丁氧羰基氧基取代的多羟基苯乙烯树脂，（B）溶液阻挡剂，和（C）鎓盐，其特征在于，所述溶液阻断剂每分子含有至少一个叔丁氧基羰基氧基，所述鎓盐是由下式（1）表示的双（对叔丁基苯基）碘鎓三氟甲磺酸盐：

9. 发明授权

US5824824A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5824824A
公开(公告)日：1998-10-20
申请号：US742323
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Kaysuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Kaysuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： C07C381/12 , G03F7/004 , C07C319/00
CPC分类号： G03F7/0045 , C07C381/12 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a C.sub.2 -C.sub.20 alkylsulfonate or arylsulfonate anion whose alkyl or aryl has as a substituent an electron withdrawing group such as fluorine and nitro group. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates a substituted alkyl or arylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团，和其烷基或芳基具有诸如氟和硝基的吸电子基团的取代基的C 2 -C 20烷基磺酸盐或芳基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的取代烷基或芳基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

10. 发明授权

US5457003A Negative working resist material, method for the production of the same and process of forming resist patterns using the same 失效
标题翻译：负性抗蚀剂材料，其制造方法以及使用其形成抗蚀剂图案的工艺
公开(公告)号：US5457003A
公开(公告)日：1995-10-10
申请号：US99398
申请日：1993-07-30
申请人： Akinobu Tanaka , Hiroshi Ban , Jiro Nakamura , Takao Kimura , Yoshio Kawai
发明人： Akinobu Tanaka , Hiroshi Ban , Jiro Nakamura , Takao Kimura , Yoshio Kawai
IPC分类号： G03F7/075
CPC分类号： G03F7/0757 , Y10S430/122 , Y10S430/123
摘要： A resist material comprises a polysiloxane obtained by hydrolysis and condensation with dehydration of one or more alkoxysilanes having an oxirane ring, or of a mixture of the alkoxysilane(s) having an oxirane ring and one or more alkoxysilanes having no oxirane ring, and an acid generator. The resist material may contain one or more of a spectral sensitizer, an organic polymer having a hydroxyl group or an epoxy compound. Resist patterns are formed by coating an organic polymer on a substrate and then the resist material on the film of the organic polymer to form a two layer resist having a bottom layer of the organic polymer and top layer of the resist material, prebaking, imagewise exposing high radiation, postbaking, and developing the resist with alkaline solutions to remove an unexposed portion of the top layer, and dry etching the bottom layer using the relic of the resist material as a mask. the temperature of the post baking is preferably lower than that of the prebaking.
摘要翻译：抗蚀剂材料包括通过水解和缩合得到的聚硅氧烷，所述聚硅氧烷通过脱水一个或多个具有环氧乙烷环的烷氧基硅烷，或具有环氧乙烷环的烷氧基硅烷和一个或多个不具有环氧乙烷环的烷氧基硅烷的混合物和酸发电机。抗蚀剂材料可以含有一种或多种光谱增感剂，具有羟基的有机聚合物或环氧化合物。通过在有机聚合物的膜上涂覆有机聚合物，然后在有机聚合物的膜上涂覆抗蚀剂材料形成具有有机聚合物的底层和抗蚀剂材料的顶层的双层抗蚀剂，预烘烤，成像曝光高辐射，后烘烤，并用碱性溶液显影抗蚀剂以除去顶层的未曝光部分，并使用抗蚀剂材料的遗物作为掩模干蚀刻底层。后烘烤的温度优选低于预烘烤的温度。

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