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1. 发明申请

US20110303973A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD 有权
标题翻译：半导体器件和生产方法
公开(公告)号：US20110303973A1
公开(公告)日：2011-12-15
申请号：US13116506
申请日：2011-05-26
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42392 , H01L21/26586 , H01L21/823814 , H01L21/823828 , H01L21/823871 , H01L21/823885 , H01L27/088 , H01L27/092 , H01L29/42384 , H01L29/4908 , H01L29/4958 , H01L29/66666 , H01L29/66772 , H01L29/78618 , H01L29/78642 , H01L29/78696
摘要： The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film.
摘要翻译：根据本发明的半导体器件是nMOS SGT，并且由第一n +型硅层，含有金属的第一栅电极和第二n +型硅层构成，所述第二n +型硅层布置在垂直定位在第一n +型硅层上的第一柱状硅层的表面上第一平面硅层。此外，第一绝缘膜位于第一栅电极和第一平面硅层之间，第二绝缘膜位于第一栅电极的顶表面上。此外，含有第一栅电极的金属被第一n +型硅层，第二n +型硅层，第一绝缘膜和第二绝缘膜包围。

2. 发明授权

US09153697B2 Surrounding gate transistor (SGT) structure 有权
标题翻译：周边栅晶体管（SGT）结构
公开(公告)号：US09153697B2
公开(公告)日：2015-10-06
申请号：US13116506
申请日：2011-05-26
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , King-Jien Chui , Yisuo Li , Yu Jiang , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
IPC分类号： H01L21/70 , H01L29/786 , H01L21/8238 , H01L29/423 , H01L29/49 , H01L29/66 , H01L21/265
CPC分类号： H01L29/42392 , H01L21/26586 , H01L21/823814 , H01L21/823828 , H01L21/823871 , H01L21/823885 , H01L27/088 , H01L27/092 , H01L29/42384 , H01L29/4908 , H01L29/4958 , H01L29/66666 , H01L29/66772 , H01L29/78618 , H01L29/78642 , H01L29/78696
摘要： The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film.
摘要翻译：根据本发明的半导体器件是nMOS SGT，并且由第一n +型硅层，含有金属的第一栅电极和第二n +型硅层构成，所述第二n +型硅层布置在垂直定位在第一n +型硅层上的第一柱状硅层的表面上第一平面硅层。此外，第一绝缘膜位于第一栅电极和第一平面硅层之间，第二绝缘膜位于第一栅电极的顶表面上。此外，含有第一栅电极的金属被第一n +型硅层，第二n +型硅层，第一绝缘膜和第二绝缘膜包围。

3. 发明授权

US08486785B2 Surround gate CMOS semiconductor device 有权
公开(公告)号：US08486785B2
公开(公告)日：2013-07-16
申请号：US13113482
申请日：2011-05-23
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , Yu Jiang , King-Jien Chui , Yisuo Li , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , Yu Jiang , King-Jien Chui , Yisuo Li , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
IPC分类号： H01L21/8238
CPC分类号： H01L29/66484 , H01L21/823885 , H01L21/84 , H01L27/1203 , H01L29/42392 , H01L29/78642
摘要： The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer.

4. 发明申请

US20110303985A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110303985A1
公开(公告)日：2011-12-15
申请号：US13113482
申请日：2011-05-23
申请人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , Yu Jiang , King-Jien Chui , Yisuo Li , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
发明人： Fujio Masuoka , Hiroki Nakamura , Shintaro Arai , Tomohiko Kudo , Yu Jiang , King-Jien Chui , Yisuo Li , Xiang Li , Zhixian Chen , Nansheng Shen , Vladimir Bliznetsov , Kavitha Devi Buddharaju , Navab Singh
IPC分类号： H01L27/092 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66484 , H01L21/823885 , H01L21/84 , H01L27/1203 , H01L29/42392 , H01L29/78642
摘要： The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer.
摘要翻译：半导体器件包括：平面硅层上的柱状硅层; 形成在柱状硅层的底部区域中的第一n +型硅层; 形成在柱状硅层的上部区域的第二n +型硅层; 栅极绝缘膜，形成在第一和第二n +型硅层之间的沟道区的周边; 栅电极，形成在所述栅极绝缘膜的周边，并具有第一金属 - 硅化合物层; 形成在栅电极和平面硅层之间的绝缘膜，形成在柱状硅层的上侧壁中的绝缘膜侧壁; 形成在所述平面硅层中的第二金属 - 硅化合物层; 以及形成在第二n +型硅层上的电接触。

5. 发明授权

US09307423B2 Method for coordinating inter-cell interference in heterogeneous network and heterogeneous network 有权
标题翻译：用于协调异构网络和异构网络中的小区间干扰的方法
公开(公告)号：US09307423B2
公开(公告)日：2016-04-05
申请号：US14131370
申请日：2012-07-09
申请人： Satoshi Nagata , Jing Wang , Yu Jiang , Xiaoming She , Lan Chen , Hirohito Suda
发明人： Satoshi Nagata , Jing Wang , Yu Jiang , Xiaoming She , Lan Chen , Hirohito Suda
IPC分类号： H04W24/02 , H04W16/14 , H04W72/08 , H04W72/04
CPC分类号： H04W24/02 , H04W16/14 , H04W72/0426 , H04W72/082 , Y02D70/122 , Y02D70/1262
摘要： Provided are a method for coordinating inter-cell interference in a heterogeneous network (HetNet) and the heterogeneous network. The method includes: forming M normal base stations and low-power nodes within coverage of the respective normal base stations in the heterogeneous network into a coordinated group; combining mute/non-mute states of bandwidths of the M normal base stations to obtain a plurality of states of the coordinated group; a user of each of the normal base stations feeding at least one first CQI back to the normal base station; a user of each of the low-power nodes feeding one or more second CQIs back to the low-power node; using the first CQI and the second CQIs as a basis to make capacity estimation of the coordinated group; and setting the mute/non-mute states of the bandwidths of the M normal base stations in accordance with a state of the coordinated group corresponding to an optimal system capacity so as to perform data transmission. In the method for coordinating interference provided by the present invention, M transmission points each including one or more normal base stations and low-power nodes covered by the respective normal base stations can be formed into a coordinated group, thereby extending processing for the normal base stations up to all the transmission points in the coordinated group.
摘要翻译：提供了一种用于协调异构网络（HetNet）和异构网络中的小区间干扰的方法。该方法包括：将异构网络中相应正常基站的覆盖范围内的M个正常基站和低功率节点形成协调组; 组合M个正常基站的静音/非静音带宽，以获得协调组的多个状态; 每个正常基站的用户将至少一个第一CQI馈送回正常基站; 每个低功率节点的用户将一个或多个第二CQI馈送回所述低功率节点; 使用第一CQI和第二CQI作为进行协调组的容量估计的基础; 以及根据与最佳系统容量相对应的协调组的状态来设置M个正常基站的带宽的静音/非静音状态，以执行数据传输。在本发明提供的干扰协调方法中，可以将由各个正常基站覆盖的一个或多个正常基站和低功率节点组成的M个发送点形成为协调组，从而扩展正常基站的处理到达协调组中的所有传输点的站。

6. 发明申请

US20130239690A1 MRE EXCITATION APPARATUS, EXCITATION SYSTEM, AND EXCITATION METHOD 审中-公开
标题翻译：地雷征用装置，激励系统和激励方法
公开(公告)号：US20130239690A1
公开(公告)日：2013-09-19
申请号：US13818964
申请日：2011-08-25
申请人： Shigeru Tadano , Itsuro Kajiwara , Kazuhiro Fujisaki , Seishin Takao , Gen Nakamura , Yu Jiang , Mikio Suga
发明人： Shigeru Tadano , Itsuro Kajiwara , Kazuhiro Fujisaki , Seishin Takao , Gen Nakamura , Yu Jiang , Mikio Suga
IPC分类号： G01N29/04
CPC分类号： G01N29/04 , A61B5/0051 , A61B5/055 , G01R33/56358
摘要： An MRE excitation apparatus (100) comprises an excitation device (110) that generates vibration, and a transmitter (120) that is made using a non-magnetic material and that, with one end-section being fastened to the excitation device (110) and the other end-section being connected with a living body (300), and that extends in direction that vibration is transmitted from the excitation device (110) and transmits longitudinal vibration from the excitation device (110) to the living body (300). The frequency of the vibration is 125 Hz or greater, the amplitude of the vibration is 0.2 mm or greater, and the primary natural frequency of the longitudinal vibration of the transmitter (120) is further on the higher side than the frequency band of the vibration from the excitation device (110).
摘要翻译： MRE励磁装置（100）包括产生振动的励磁装置（110）和使用非磁性材料制成的发射器（120），并且一个端部紧固到激励装置（110）上，并且另一端部与活体（300）连接，并且在从激励装置（110）传递振动的方向延伸，并且将来自激励装置（110）的纵向振动传递到生物体（300）。振动的频率为125Hz以上，振动的振幅为0.2mm以上，发送器（120）的纵向振动的主要固有频率进一步在比振动的频带高的一侧来自激励装置（110）。

7. 发明授权

US08528082B2 Security disposing method and device for input data 有权
标题翻译：输入数据的安全处理方法和设备
公开(公告)号：US08528082B2
公开(公告)日：2013-09-03
申请号：US12672506
申请日：2008-07-23
申请人： Yu Jiang
发明人： Yu Jiang
IPC分类号： G06F11/00 , G06F12/14 , G06F7/04
CPC分类号： G06F21/606
摘要： A security disposing method and device for the input data involves generating an interference data according to a predefined rule when inputting the data, and mixing the input data with the interference data and sending the mixed data, and parsing out the interference data according to the predefined rule after receiving the mixed data, and separating the input data according to the parsed interference data.
摘要翻译：用于输入数据的安全处置方法和装置包括在输入数据时根据预定规则生成干扰数据，并将输入数据与干扰数据进行混合并发送混合数据，并根据预定义解析出干扰数据接收混合数据后的规则，并根据解析的干扰数据分离输入数据。

8. 发明授权

US07329656B2 Arylthiobenzylpiperidine derivatives 失效
标题翻译：芳硫基苄基哌啶衍生物
公开(公告)号：US07329656B2
公开(公告)日：2008-02-12
申请号：US11231601
申请日：2005-09-21
申请人： Mohammad R. Marzabadi , Yu Jiang , Chien-An Chen , Kai Lu , Kim Andersen
发明人： Mohammad R. Marzabadi , Yu Jiang , Chien-An Chen , Kai Lu , Kim Andersen
IPC分类号： A61K31/4545 , A61K31/444 , A61K31/5377 , C07D211/04 , C07D401/04 , C07D413/14
CPC分类号： C07D401/04 , C07D211/26 , C07D211/62 , C07D401/12 , C07D401/14
摘要： This invention is directed to Arylthiobenzylpiperidine derivatives which are ligands at the MCH1 receptor. The invention provides a pharmaceutical composition comprising a therapeutically effective amount of a compound of the invention and a pharmaceutically acceptable carrier. This invention also provides a pharmaceutical composition made by admixing a therapeutically effective amount of a compound of the invention and a pharmaceutically acceptable carrier. This invention further provides a process for making a pharmaceutical composition comprising combining a therapeutically effective amount of a compound of the invention and a pharmaceutically acceptable carrier. This invention also provides a method of treating a subject suffering from depression and/or anxiety which comprises administering to the subject a therapeutically effective amount of a compound of the subject invention. This invention also provides a method of treating a subject suffering from obesity which comprises administering to the subject a therapeutically effective amount of a compound of the subject invention.
摘要翻译：本发明涉及作为MCH1受体的配体的芳硫基苄基哌啶衍生物。本发明提供了包含治疗有效量的本发明化合物和药学上可接受的载体的药物组合物。本发明还提供通过混合治疗有效量的本发明化合物和药学上可接受的载体制备的药物组合物。本发明还提供了制备药物组合物的方法，其包括将治疗有效量的本发明化合物和药学上可接受的载体组合。本发明还提供了治疗患有抑郁症和/或焦虑症的受试者的方法，其包括向受试者施用治疗有效量的本发明化合物。本发明还提供了治疗患有肥胖症的受试者的方法，其包括向受试者施用治疗有效量的本发明化合物。

9. 发明授权

US07105544B2 Substituted alkyl amido piperidines 失效
公开(公告)号：US07105544B2
公开(公告)日：2006-09-12
申请号：US10345063
申请日：2003-01-14
申请人： Mohammad R. Marzabadi , John M. Wetzel , Chien-An Chen , Yu Jiang , Kai Lu
发明人： Mohammad R. Marzabadi , John M. Wetzel , Chien-An Chen , Yu Jiang , Kai Lu
IPC分类号： A61K31/445 , C07D211/26
CPC分类号： C07D211/26 , C07D211/28 , C07D211/90 , C07D231/12 , C07D233/56 , C07D249/08 , C07D401/04 , C07D401/06 , C07D401/10 , C07D401/12 , C07D401/14 , C07D405/06 , C07D405/12 , C07D409/06 , C07D409/10 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/06 , C07D417/10 , C07D471/04 , C07D495/04
摘要： This invention is directed to compounds which are selective antagonists for melanin concentrating hormone-1 (MCH1) receptors. The invention provides a pharmaceutical composition comprising a therapeutically effective amount of the compound of the invention and a pharmaceutically acceptable carrier. This invention provides a pharmaceutical composition made by combining a therapeutically effective amount of the compound of this invention and a pharmaceutically acceptable carrier. This invention further provides a process for making a pharmaceutical composition comprising combining a therapeutically effective amount of the compound of the invention and a pharmaceutically acceptable carrier. This invention also provides a method of reducing the body mass of a subject which comprises administering to the subject an amount of a compound of the invention effective to reduce the body mass of the subject. This invention further provides a method of treating a subject suffering from depression and/or anxiety which comprises administering to the subject an amount of a compound of the invention effective to treat the subject's depression and/or anxiety.

10. 发明申请

US20060173027A1 Spirocvclic piperidines as mch1 antagonists and uses thereof 失效
标题翻译：作为mch1拮抗剂的西吡唑哌啶及其用途
公开(公告)号：US20060173027A1
公开(公告)日：2006-08-03
申请号：US10518939
申请日：2003-07-03
申请人： Mohammad Marzabadi , Yu Jiang , Kai Lu , Chien-An Chen , John De Leon , John Wetzel , Kim Andersen
发明人： Mohammad Marzabadi , Yu Jiang , Kai Lu , Chien-An Chen , John De Leon , John Wetzel , Kim Andersen
IPC分类号： A61K31/4747
CPC分类号： C07D221/20 , C07D401/06 , C07D401/12 , C07D405/12 , C07D409/12 , C07D413/12 , C07D491/10
摘要： This invention is directed to compounds which are selective antagonists for melanin concentrating hormone-1 (MCH1) receptors. The invention provides a pharmaceutical composition comprising a therapeutically effective amount of the compound of the invention and a pharmaceutically acceptable carrier. This invention provides a pharmaceutical composition made by combining a therapeutically effective amount of the compound of this invention and a pharmaceutically acceptable carrier. This invention further provides a process for making a pharmaceutical composition comprising combining a therapeutically effective amount of the compound of the invention and a pharmaceutically acceptable carrier. This invention also provides a method of reducing the body mass of a subject which comprises administering to the subject an amount of a compound of the invention effective to reduce the body mass of the subject. This invention further provides a method of treating a subject suffering from depression and/or anxiety which comprises administering to the subject an amount of a compound of the invention effective to treat the subject=s depression and/or anxiety. This invention further provides a method of treating a subject suffering from a urinary disorder.
摘要翻译：本发明涉及作为黑色素浓缩激素-1（MCH1）受体的选择性拮抗剂的化合物。本发明提供了包含治疗有效量的本发明化合物和药学上可接受的载体的药物组合物。本发明提供通过将治疗有效量的本发明化合物与药学上可接受的载体组合而成的药物组合物。本发明还提供了制备药物组合物的方法，其包括将治疗有效量的本发明化合物和药学上可接受的载体组合。本发明还提供减少受试者体重的方法，其包括向受试者施用一定量的有效减少受试者体重的本发明化合物。本发明进一步提供了治疗患有抑郁症和/或焦虑症的受试者的方法，其包括向受试者施用有效治疗受试者抑郁症和/或焦虑的量的本发明化合物。本发明还提供了治疗患有尿失禁的受试者的方法。

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