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1. 发明授权

US06220091B1 Liquid level pressure sensor and method 失效
标题翻译：液位压力传感器及方法
公开(公告)号：US06220091B1
公开(公告)日：2001-04-24
申请号：US08976961
申请日：1997-11-24
申请人： Fufa Chen , Yu Chang , Gwo Tzu
发明人： Fufa Chen , Yu Chang , Gwo Tzu
IPC分类号： G01F2318
CPC分类号： G01F23/168 , C23C16/4482
摘要： The present invention provides methods and systems for forming deposition films on semiconductor wafers. In particular, the present invention measures the amount of liquid remaining in a bubbler ampule of a semiconductor processing system used for chemical vapor deposition (CVD) on a semiconductor wafer. More particularly, measurements are made when gas has stopped flowing through the ampule, and the liquid is in a static condition. The system of the present invention comprises a container containing a liquid, a gas inlet for introduction of gas into the liquid, a gas outlet, and a pressure transducer fluidly connected to the gas inlet and the gas outlet. The device measures the amount of liquid in a bubbler ampule through measurements of gas pressure differential between gas exiting a nozzle near the bottom of the liquid and gas located above the level of the liquid. The depth of liquid remaining in the ampule may be extrapolated from the measured pressure differential.
摘要翻译：本发明提供了在半导体晶片上形成沉积膜的方法和系统。特别地，本发明测量在半导体晶片上用于化学气相沉积（CVD）的半导体处理系统的起泡器安瓿中剩余的液体量。更具体地，当气体已经停止流过安瓿并且液体处于静止状态时进行测量。本发明的系统包括容纳液体的容器，用于将气体引入液体的气体入口，气体出口和与气体入口和气体出口流体连接的压力传感器。该装置通过测量离开位于液体底部附近的喷嘴的气体和位于液体高度之上的气体之间的气压差来测量起泡器安瓿中的液体量。保留在安瓿中的液体的深度可以从测量的压力差外推。

2. 发明授权

US06364949B1 300 mm CVD chamber design for metal-organic thin film deposition 有权
标题翻译： 300 mm CVD室设计用于金属 - 有机薄膜沉积
公开(公告)号：US06364949B1
公开(公告)日：2002-04-02
申请号：US09421779
申请日：1999-10-19
申请人： David T. Or , Keith K. Koai , Fufa Chen , Lawrence C. Lei
发明人： David T. Or , Keith K. Koai , Fufa Chen , Lawrence C. Lei
IPC分类号： B05C1106
CPC分类号： C23C16/4557 , C23C16/4412 , C23C16/45565 , C23C16/45572 , C23C16/45591 , C23C16/5096
摘要： The present invention relates to plasma-enhanced chemical vapor deposition (PECVD) and related chamber hardware. Embodiments of the present invention include a PECVD system for depositing a film of titanium nitride from a TDMAT precursor. The present invention broadly provides a chamber, a gas delivery assembly, a pedestal which supports a substrate, and a plasma system to process substrates. In general, the invention includes a chamber body and a gas delivery assembly disposed thereon to define a chamber cavity. A pedestal movably disposed within the chamber cavity is adapted to support a substrate during processing. The gas delivery assembly is supported by the chamber body and includes a temperature control plate and a showerhead mounted thereto. Preferably, the interface between the showerhead and temperature control plate is parallel to a radial direction of the gas delivery assembly to accommodate lateral thermal expansion without separation of the showerhead and the temperature control plate. A blocker plate, or baffle plate, may be disposed between the showerhead and temperature control plate to facilitate dispersion of gases delivered thereto.
摘要翻译：本发明涉及等离子体增强化学气相沉积（PECVD）和相关腔室硬件。本发明的实施例包括用于从TDMAT前体沉积氮化钛膜的PECVD系统。本发明广泛地提供了一个腔室，一个气体输送组件，一个支撑衬底的基座和一个用于处理衬底的等离子体系统。通常，本发明包括一个室主体和一个设置在其上以限定腔室的气体输送组件。可移动地设置在腔室内的基座适于在处理期间支撑衬底。气体输送组件由腔室主体支撑并且包括安装在其上的温度控制板和喷头。优选地，喷头和温度控制板之间的界面平行于气体输送组件的径向方向以适应横向热膨胀而不分离喷头和温度控制板。可以在喷头和温度控制板之间设置阻挡板或挡板，以便于输送到其上的气体的分散。

3. 发明授权

US08580042B2 Methods and apparatus for cleaning semiconductor wafers 有权
标题翻译：用于清洁半导体晶片的方法和设备
公开(公告)号：US08580042B2
公开(公告)日：2013-11-12
申请号：US12734983
申请日：2007-12-10
申请人： Voha Nuch , David Wang , Yue Ma , Fufa Chen , Jian Wang , Yunwen Huang , Liangzhi Xie , Chuan He
发明人： Voha Nuch , David Wang , Yue Ma , Fufa Chen , Jian Wang , Yunwen Huang , Liangzhi Xie , Chuan He
IPC分类号： B08B3/00 , B08B7/00
CPC分类号： H01L21/67051
摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
摘要翻译：用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的第一马达卡盘和第二马达驱动托盘。托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。由托盘收集的清洁溶液可以被引导到指定的受体中。该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

4. 发明授权

US06352620B2 Staged aluminum deposition process for filling vias 有权
标题翻译：分阶段铝沉积工艺用于填充过孔
公开(公告)号：US06352620B2
公开(公告)日：2002-03-05
申请号：US09340977
申请日：1999-06-28
申请人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
发明人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
IPC分类号： C23L1434
CPC分类号： H01L21/76882
摘要： The present invention is a semiconductor metallization process for providing complete via fill on a substrate and a planar metal surface, wherein the vias are free of voids and the metal surface is free of grooves. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A PVD metal layer, such as PVD Al or PVD Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr to provide a conformal PVD metal layer. Then the vias or contacts are filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably carried out in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by a long throw distance of at least 100 mm, and a hot metal PVD chamber that also serves as a reflow chamber.
摘要翻译：本发明是用于在基板和平面金属表面上提供完整的通孔填充的半导体金属化工艺，其中通孔没有空隙，并且金属表面没有凹槽。在本发明的一个方面中，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。然后将PVD金属层（例如PVD Al或PVD Cu）以低于约1毫乇的压力沉积在耐火层上，以提供保形PVD金属层。然后，通孔或触点填充金属，例如通过在保形PVD金属层上物理气相沉积沉积的附加金属回流。该方法优选在包括长投影PVD室的集成处理系统中进行，其中靶和衬底以至少100mm的长距离距离分开，以及也用作回流的热金属PVD室房间。

5. 发明授权

US06179277B2 Liquid vaporizer systems and methods for their use 失效
标题翻译：液体蒸发器系统及其使用方法
公开(公告)号：US06179277B2
公开(公告)日：2001-01-30
申请号：US09064359
申请日：1998-02-27
申请人： Joel M. Huston , Fufa Chen
发明人： Joel M. Huston , Fufa Chen
IPC分类号： B01F304
CPC分类号： C23C16/448 , C23C16/4481
摘要： The present invention provides for improved liquid vaporizer systems and methods for their use. Vaporizer systems of the present invention are likely to be particularly useful for the vaporization of liquids having a relatively low vapor pressure, such as TDMAT. In one preferred embodiment, a liquid vaporizer system (10) includes a vaporizer unit (16) having first and second inlets (50 and 60) and an outlet (62). The vaporizer system further includes a vessel (22) having an inlet (70) and an outlet (72), whereby the vessel inlet is operably connected to the vaporizer outlet. The vessel contains a plurality of passages (78) which operably connect the vessel inlet and the vessel outlet. In this manner, liquids and/or gases flowing into the vaporizer unit through either or both of its two inlets, exit the vaporizer unit outlet and enter the vessel inlet. Liquids and/or gases pass through the plurality of passages and exit the vessel outlet. In this manner, heating vaporizer unit and vessel to desired temperatures results in the vaporization of the liquid, such as liquid TDMAT.
摘要翻译：本发明提供改进的液体蒸发器系统及其使用方法。本发明的蒸发器系统可能特别可用于蒸发具有较低蒸气压的液体，例如TDMAT。在一个优选实施例中，液体蒸发器系统（10）包括具有第一和第二入口（50和60）和出口（62）的蒸发器单元（16）。蒸发器系统还包括具有入口（70）和出口（72）的容器（22），由此容器入口可操作地连接到蒸发器出口。容器包含可操作地连接容器入口和容器出口的多个通道（78）。以这种方式，通过其两个入口中的一个或两个流入蒸发器单元的液体和/或气体离开蒸发器单元出口并进入容器入口。液体和/或气体通过多个通道并离开容器出口。以这种方式，使加热蒸发器单元和容器达到所需温度导致液体（例如液体TDMAT）的蒸发。

6. 发明授权

US06660135B2 Staged aluminum deposition process for filling vias 失效
标题翻译：分阶段铝沉积工艺用于填充过孔
公开(公告)号：US06660135B2
公开(公告)日：2003-12-09
申请号：US10038199
申请日：2001-12-21
申请人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
发明人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
IPC分类号： C25C1434
CPC分类号： H01L21/76882
摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.
摘要翻译：一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

7. 发明授权

US06436820B1 Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å 失效
标题翻译：用于沉积具有大于1000的组合厚度的低残留卤素含量多层氮化钛膜的CVD沉积的方法
公开(公告)号：US06436820B1
公开(公告)日：2002-08-20
申请号：US09497787
申请日：2000-02-03
申请人： Jianhua Hu , Yin Lin , Fufa Chen , Yehuda Demayo , Ming Xi
发明人： Jianhua Hu , Yin Lin , Fufa Chen , Yehuda Demayo , Ming Xi
IPC分类号： H01L21324
CPC分类号： H01L21/28568 , C23C16/34 , C23C16/56
摘要： The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 Å and, particularly greater than 1000 Å, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 Å was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 Å were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 &mgr;&OHgr;cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 Å.
摘要翻译：本公开涉及通过CVD技术产生厚度大于约400埃，特别是大于1000埃，电阻率小于约175微米/厘米3的TiN膜的发现，其中一系列TiN 沉积层以形成期望的TiN膜厚度。使用CVD沉积/处理步骤沉积各层。在处理步骤中，从CVD沉积膜去除残留的卤素（通常为氯）。具体地，通过多次沉积/处理步骤工艺制备具有大于约400埃厚度的TiN膜，其中制备具有小于400的厚度的单独TiN层以提供具有组合所需的成品TiN层厚度。每个单独的TiN层被CVD沉积，然后通过在氨环境中进行的退火步骤中将TiN表面暴露于氨进行处理。以这种方式形成的TiN膜不仅具有小于约175μOMEGA·cm的电阻率，而且基本上没有微裂纹，包括厚度大于的的膜。

8. 发明授权

US06221174B1 Method of performing titanium/titanium nitride integration 失效
标题翻译：执行钛/氮化钛整合的方法
公开(公告)号：US06221174B1
公开(公告)日：2001-04-24
申请号：US09248869
申请日：1999-02-11
申请人： Fufa Chen , Yin Lin , Jianhua Hu , Frederick Wu , Ming Xi , Li Wu
发明人： Fufa Chen , Yin Lin , Jianhua Hu , Frederick Wu , Ming Xi , Li Wu
IPC分类号： C23C824
CPC分类号： C23C16/0281 , H01L21/28568
摘要： The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.
摘要翻译：本发明是提高由四氯化钛（TiCi4）和氨（NH3）的反应形成的钛（Ti）/氮化钛（TiN）CVD膜的一体化的可靠性的晶片处理方法。对Ti膜进行NH 3气处理，使Ti膜不受氯和氯化氢侵蚀。使用热TiCl 4 / NH 3反应将TiN膜的薄晶种层沉积在处理的Ti膜上。随后在种子层上的TiN膜沉积导致Ti / TiN膜叠层的成功整合，使Ti膜厚度达到约300。

9. 发明申请

US20110114120A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 有权
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：US20110114120A1
公开(公告)日：2011-05-19
申请号：US12734983
申请日：2007-12-10
申请人： Voha Nuch , David Wang , Yue Ma , Fufa Chen , Jian Wang , Yunwen Huang , Liangzhi Xie , Chuan He
发明人： Voha Nuch , David Wang , Yue Ma , Fufa Chen , Jian Wang , Yunwen Huang , Liangzhi Xie , Chuan He
IPC分类号： B08B3/00
CPC分类号： H01L21/67051
摘要： An apparatus for cleaning and conditioning the surface of a semiconductor substrate such as wafer includes a rotatable chuck, a chamber, a rotatable tray for collecting cleaning solution with one or more drain outlets, multiple receptors for collecting multiple cleaning solutions, a first motor to drive chuck, and a second motor to drive the tray. The drain outlet in the tray can be positioned directly above its designated receptor located under the drain outlet. The cleaning solution collected by the tray can be guided into designated receptor. One characteristic of the apparatus is having a robust and precisely controlled cleaning solution recycle with minimum cross contamination.
摘要翻译：用于清洁和调理诸如晶片的半导体衬底的表面的设备包括可转动卡盘，腔室，用于收集具有一个或多个排出口的清洁溶液的可旋转托盘，用于收集多个清洁溶液的多个受体，用于驱动的第一马达卡盘和第二马达驱动托盘。托盘中的排水出口可以位于排水出口下方的指定接收器的正上方。由托盘收集的清洁溶液可以被引导到指定的受体中。该设备的一个特征是具有坚固且精确控制的清洁溶液循环，具有最小的交叉污染。

10. 发明授权

US06332601B1 Liquid vaporizers for semiconductor processing systems 有权
标题翻译：用于半导体处理系统的液体蒸发器
公开(公告)号：US06332601B1
公开(公告)日：2001-12-25
申请号：US09721337
申请日：2000-11-22
申请人： Joel M. Huston , Fufa Chen
发明人： Joel M. Huston , Fufa Chen
IPC分类号： B01F304
CPC分类号： C23C16/448 , C23C16/4481
摘要： The present invention provides for improved liquid vaporizer systems and methods for their use. Vaporizer systems of the present invention are likely to be particularly useful for the vaporization of liquids having a relatively low vapor pressure, such as TDMAT. In one preferred embodiment, a liquid vaporizer system (10) includes a vaporizer unit (16) having first and second inlets (50 and 60) and an outlet (62). The vaporizer system further includes a vessel (22) having an inlet (70) and an outlet (72), whereby the vessel inlet is operably connected to the vaporizer outlet. The vessel contains a plurality of passages (78) which operably connect the vessel inlet and the vessel outlet. In this manner, liquids and/or gases flowing into the vaporizer unit through either or both of its two inlets, exit the vaporizer unit outlet and enter the vessel inlet. Liquids and/or gases pass through the plurality of passages and exit the vessel outlet. In this manner, heating vaporizer unit and vessel to desired temperatures results in the vaporization of the liquid, such as liquid TDMAT.
摘要翻译：本发明提供改进的液体蒸发器系统及其使用方法。本发明的蒸发器系统可能特别可用于蒸发具有较低蒸气压的液体，例如TDMAT。在一个优选实施例中，液体蒸发器系统（10）包括具有第一和第二入口（50和60）和出口（62）的蒸发器单元（16）。蒸发器系统还包括具有入口（70）和出口（72）的容器（22），由此容器入口可操作地连接到蒸发器出口。容器包含可操作地连接容器入口和容器出口的多个通道（78）。以这种方式，通过其两个入口中的一个或两个流入蒸发器单元的液体和/或气体离开蒸发器单元出口并进入容器入口。液体和/或气体通过多个通道并离开容器出口。以这种方式，使加热蒸发器单元和容器达到所需温度导致液体（例如液体TDMAT）的蒸发。

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