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1. 发明授权

US5358879A Method of making gate overlapped lightly doped drain for buried channel devices 失效
标题翻译：制造掩埋沟道器件的栅极重叠轻掺杂漏极的方法
公开(公告)号：US5358879A
公开(公告)日：1994-10-25
申请号：US54994
申请日：1993-04-30
申请人： Frederick T. Brady , Charles P. Breiten , Nadium F. Haddad , William G. Houston , Oliver S. Spencer , Steven J. Wright
发明人： Frederick T. Brady , Charles P. Breiten , Nadium F. Haddad , William G. Houston , Oliver S. Spencer , Steven J. Wright
IPC分类号： H01L21/28 , H01L21/336 , H01L29/49 , H01L29/78 , H01L21/266
CPC分类号： H01L29/6659 , H01L21/28247 , H01L29/4983 , H01L29/6656 , H01L29/7836 , Y10S148/114
摘要： A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.
摘要翻译：描述了在掩埋沟道MOSFET上形成多边栅极LDD结构的工艺。在源/漏处理之后，在栅极上形成多晶硅间隔物。间隔物随后通过植入中性杂质而短路到主栅极。该工艺特别适用于SOI技术。

2. 发明申请

US20110042770A1 WAFER LEVEL PROCESSING FOR BACKSIDE ILLUMINATED IMAGE SENSORS 有权
标题翻译：背面照明图像传感器的水平加工
公开(公告)号：US20110042770A1
公开(公告)日：2011-02-24
申请号：US12940133
申请日：2010-11-05
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/14618 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括传感器层，其具有多个像素阵列的感光元件，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。在氧化物层的背面形成有滤色器阵列，在覆盖滤色器阵列的氧化物层的背面附着有透明盖。再分布金属导体通过介电层中的相应开口与相应的接合焊盘导体电接触。再分布钝化层形成在再分布金属导体上，并且接触金属化通过再分布钝化层中的相应开口与相应的再分布金属导体中的相应的一个电接触。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

3. 发明申请

US20100006908A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH SHALLOW BACKSIDE TRENCH FOR PHOTODIODE ISOLATION 审中-公开
标题翻译：背面照明的图像传感器，带有背光隔离膜，用于光电隔离
公开(公告)号：US20100006908A1
公开(公告)日：2010-01-14
申请号：US12169810
申请日：2008-07-09
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14632 , H01L27/1463 , H01L27/1464 , H01L27/14687
摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。传感器层还包括形成在传感器层的背面中的多个背面沟槽，并被布置成在各对感光元件之间提供隔离。背面沟槽具有形成在传感器层中的相应的背面场隔离注入区域，并且所得结构提供相邻光敏元件之间的载流子复合和串扰的减小。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

4. 发明申请

US20080265295A1 METHODS, STRUCTURES AND SYTEMS FOR AN IMAGE SENSOR DEVICE FOR IMPROVING QUANTUM EFFICIENCY OF RED PIXELS 有权
标题翻译：用于提高红色像素的量子效率的图像传感器设备的方法，结构和动作
公开(公告)号：US20080265295A1
公开(公告)日：2008-10-30
申请号：US11741259
申请日：2007-04-27
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodiment, a CMOS image sensor is formed on an p-type substrate and the high energy implant is a p-type implant that creates a p-type ground contact under the red pixel, thus reducing dark non-uniformity effects. In another embodiment, a CMOS image sensor is formed on an n-type substrate and a high energy p-type implant creates a p-type region under only the red pixel to increase photon collection depth, which in turn increases the quantum efficiency for the red pixels.
摘要翻译：一种仅在CMOS图像传感器的红色像素位置提供高能量注入的方法和结构。植入物增加了红色像素的光子收集深度，这进而提高了红色像素的量子效率。在一个实施例中，在p型衬底上形成CMOS图像传感器，并且高能量注入是在红色像素之下产生p型接地触点的p型注入，从而减少黑暗的不均匀效应。在另一个实施例中，CMOS图像传感器形成在n型衬底上，高能p型注入器仅在红色像素下产生p型区域，以增加光子收集深度，这进而提高了量子效率红色像素。

5. 发明授权

US06638832B2 Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices 失效
公开(公告)号：US06638832B2
公开(公告)日：2003-10-28
申请号：US09741028
申请日：2000-12-21
申请人： Frederick T. Brady , Jon Maimon
发明人： Frederick T. Brady , Jon Maimon
IPC分类号： H01L2176
CPC分类号： H01L21/26506 , H01L21/76237 , H01L21/823412 , H01L21/823481
摘要： Neutral conductivity ions, preferably germanium, are implanted through the oxide of a metal oxide semiconductor after isolation formation to provide a nearly constant threshold voltage for transistor operation independent of transistor channel width as device geometries are scaled down in size. The present invention sets forth a method for fabricating a metal oxide semiconductor (MOS) structure that controls threshold voltage Vt in the structure, the method including generating an isolation region of the semiconductor structure on a major surface of a silicon substrate, growing a thin oxide on the major surface of the semiconductor structure, implanting a large diameter neutral conductivity type ion into the major surface of the semiconductor structure through the thin oxide, annealing the semiconductor structure having the neutral conductivity ion implanted therein, and processing the semiconductor structure to create MOS devices having a near constant threshold voltage over a range of device channel widths.

6. 发明授权

US08119435B2 Wafer level processing for backside illuminated image sensors 有权
标题翻译：背面照明图像传感器的晶片级处理
公开(公告)号：US08119435B2
公开(公告)日：2012-02-21
申请号：US12940133
申请日：2010-11-05
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/14618 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括传感器层，其具有多个像素阵列的感光元件，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。在氧化物层的背面形成有滤色器阵列，在覆盖滤色器阵列的氧化物层的背面附着有透明盖。再分布金属导体通过介电层中的相应开口与相应的接合焊盘导体电接触。再分布钝化层形成在再分布金属导体上，并且接触金属化通过再分布钝化层中的相应开口与相应的再分布金属导体中的相应的一个电接触。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

7. 发明申请

US20110285880A1 COLOR FILTER ARRAY ALIGNMENT MARK FORMATION IN BACKSIDE ILLUMINATED IMAGE SENSORS 审中-公开
标题翻译：背景照明图像传感器中的颜色过滤器阵列对准标记形成
公开(公告)号：US20110285880A1
公开(公告)日：2011-11-24
申请号：US13194593
申请日：2011-07-29
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H04N9/04 , H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/1464 , H01L2224/16225
摘要： A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括包含像素阵列的感光元件的传感器层，形成在传感器层的前侧表面上的外延层和形成在传感器层的背面上的滤色器阵列。外延层包括在与传感器层的前侧表面中的各个滤色器阵列对准标记开口对应的位置处形成的多晶硅滤色器阵列对准标记。滤色器阵列与外延层的滤色器阵列对准标记对准。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

8. 发明申请

US20110115957A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH REDUCED DARK CURRENT 审中-公开
标题翻译：背光照明图像传感器，具有降低的电流
公开(公告)号：US20110115957A1
公开(公告)日：2011-05-19
申请号：US13012843
申请日：2011-01-25
申请人： Frederick T. Brady , John P. McCarten
发明人： Frederick T. Brady , John P. McCarten
IPC分类号： H04N5/335 , H01L31/14
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/14601 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层和邻近传感器层的背面的氧化物层。传感器层包括种子层和形成在种子层上的外延层，种子层具有横截面掺杂分布，其中指定的掺杂剂基本上限制在传感器层的像素阵列区域。掺杂分布有利地减少了在传感器层和氧化物层之间的界面处产生的暗电流。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

9. 发明申请

US20100006909A1 COLOR FILTER ARRAY ALIGNMENT MARK FORMATION IN BACKSIDE ILLUMINATED IMAGE SENSORS 有权
标题翻译：背景照明图像传感器中的颜色过滤器阵列对准标记形成
公开(公告)号：US20100006909A1
公开(公告)日：2010-01-14
申请号：US12169709
申请日：2008-07-09
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/1464 , H01L2224/16225
摘要： A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括包含像素阵列的感光元件的传感器层，形成在传感器层的前侧表面上的外延层和形成在传感器层的背面上的滤色器阵列。外延层包括在与传感器层的前侧表面中的各个滤色器阵列对准标记开口对应的位置处形成的多晶硅滤色器阵列对准标记。滤色器阵列与外延层的滤色器阵列对准标记对准。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

10. 发明授权

US06665161B1 Semiconductor circuit having increased susceptibility to ionizing radiation 有权
标题翻译：半导体电路对电离辐射的敏感性增加
公开(公告)号：US06665161B1
公开(公告)日：2003-12-16
申请号：US09592473
申请日：2000-06-09
申请人： Frederick T. Brady , Murty S. Polavarapu
发明人： Frederick T. Brady , Murty S. Polavarapu
IPC分类号： G05F140
CPC分类号： H01L31/115 , H01L27/144 , H01L27/14683 , H01L31/085
摘要： A radiation-susceptible integrated circuit comprises radiation sensor, a differential amplifier and circuit disabler. The radiation sensor includes two devices that have a different tolerance to ionizing radiation. When exposed to a total dose of ionizing radiation that exceeds the radiation tolerance of one of the devices but not the other, only the more radiation-susceptible device will exhibit an increase in leakage current. The differential amplifier is operable to generate an output signal having a value that is indicative of a difference or offset that exists between the output of the two devices. The output signal from the differential amplifier is received by the circuit disabler, which is activated, or not, as a function of the value of the output signal.
摘要翻译：辐射敏感集成电路包括辐射传感器，差分放大器和电路消除器。辐射传感器包括对电离辐射具有不同容限的两个装置。当暴露于超过其中一个装置而不是另一装置的辐射耐受性的电离辐射的总剂量时，只有更多的辐射敏感装置将表现出泄漏电流的增加。差分放大器可操作以产生具有指示存在于两个器件的输出之间的差异或偏移的值的输出信号。来自差分放大器的输出信号由作为输出信号的值的函数的电路消除器被接收，该电路被禁用或不被激活。

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