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1. 发明授权

US06547124B2 Method for forming a micro column grid array (CGA) 失效
公开(公告)号：US06547124B2
公开(公告)日：2003-04-15
申请号：US09881251
申请日：2001-06-14
申请人： Tushar T. Shah , Andrew TS Pomerene , Keith K. Sturcken , Steven J. Wright
发明人： Tushar T. Shah , Andrew TS Pomerene , Keith K. Sturcken , Steven J. Wright
IPC分类号： B23K3512
CPC分类号： H01L24/12 , B23K35/0222 , B23K2101/40 , H01L23/3114 , H01L24/11 , H01L24/16 , H01L2224/05001 , H01L2224/05023 , H01L2224/1147 , H01L2224/13099 , H01L2924/00013 , H01L2924/00014 , H01L2924/01033 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/15787 , H05K3/3436 , H05K3/3473 , H05K2201/10992 , H05K2203/0415 , Y02P70/613 , H01L2224/29099 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A method of forming a plurality of micro column interconnection structures on a semiconductor includes providing a semiconductor layer. A photoresist layer is formed on the semiconductor layer. A plurality of cavities are etched in the photoresist layer. The plurality of cavities extend through the photoresist layer to the semiconductor layer. Solder is deposited in the plurality of cavities, thereby forming a plurality of micro columns of solder.

2. 发明公开

US20230212833A1 RAIL TRACK CLEANER VEHICLE 审中-公开
公开(公告)号：US20230212833A1
公开(公告)日：2023-07-06
申请号：US17568741
申请日：2022-01-05
申请人： Steven J. Wright , Krista J. Wright
发明人： Steven J. Wright , Krista J. Wright
IPC分类号： E01H8/10 , B08B15/02
CPC分类号： E01H8/105 , B08B15/02
摘要： Presented is a rail track cleaner vehicle configured for cleaning rail area. The rail track cleaner vehicle includes a wheel assembly, a main frame, a liquid sprayer assembly, an air blower assembly, a vacuum assembly and an electric motor assembly. The rail track cleaner vehicle comprises a plurality of optical camera to capture real time image of the rail area. The rail track cleaner vehicle efficiently and effectively clean the rail area and enables a remote personnel to inspect the cleaning process. The rail track cleaner vehicle substantially reduces manual labor and effort to clean the rail area.

3. 发明授权

US09288976B1 Game calling device 有权
标题翻译：游戏通话设备
公开(公告)号：US09288976B1
公开(公告)日：2016-03-22
申请号：US13973500
申请日：2013-08-22
申请人： Steven J. Wright
发明人： Steven J. Wright
IPC分类号： A63H33/40 , A01M31/00
CPC分类号： A01M31/004
摘要： A housing forms an enclosed chamber. A container essentially fills the chamber is fabricated of a crinkle paper or like material adapted to produce a crackling and rustling sound when touched and manipulated by a user. A plurality of objects within the container are fabricated of a rigid material adapted to provide a three dimensional shape to the container and the housing for facilitating the movement of the crinkle paper or like material when manipulated by the user for creating a sound which will attract game during use.
摘要翻译：外壳形成封闭的腔室。基本上填充室的容器由皱纹纸或类似材料制成，适于在用户触摸和操纵时产生裂纹和沙沙声。容器内的多个物体由适于向容器和壳体提供三维形状的刚性材料制成，用于当由用户操纵时促进皱纹纸或类似材料的移动，以产生将吸引游戏的声音在使用过程中。

4. 发明公开

US20230200841A1 OSTOMY WAFER CUTTER 审中-公开
公开(公告)号：US20230200841A1
公开(公告)日：2023-06-29
申请号：US17561810
申请日：2021-12-24
申请人： Steven J. Wright , Krista J. Wright
发明人： Steven J. Wright , Krista J. Wright
IPC分类号： A61B17/3205 , A61F5/443 , A61F5/445 , B26F1/38 , B26F1/44
CPC分类号： A61B17/32053 , A61F5/443 , A61F5/445 , B26F1/44 , B26F1/3846 , B26F2001/4472
摘要： Provided is an ostomy wafer cutter for enlarging a hole of an ostomy wafer. The ostomy wafer cutter includes an upper element having a locking means to removably lock a blade element. An upper arm is connected to the upper element. A lower element comprises a platform and a central pin for insertion in the hole of the ostomy wafer. A lower arm is connected to the lower element. A handle portion positioned on at least one of: upper arm and/or lower arm, the handle portion graspable and moveable by a user in a cutting position to bring the upper element in close contact with the lower element causing the cutting edge to cut the ostomy wafer enlarging the hole of the ostomy wafer. The proposed wafer cutter efficiently enlarges the opening of the ostomy wafer and is useful for patients having limited dexterity and/or for elderly people.

5. 发明授权

US5358879A Method of making gate overlapped lightly doped drain for buried channel devices 失效
标题翻译：制造掩埋沟道器件的栅极重叠轻掺杂漏极的方法
公开(公告)号：US5358879A
公开(公告)日：1994-10-25
申请号：US54994
申请日：1993-04-30
申请人： Frederick T. Brady , Charles P. Breiten , Nadium F. Haddad , William G. Houston , Oliver S. Spencer , Steven J. Wright
发明人： Frederick T. Brady , Charles P. Breiten , Nadium F. Haddad , William G. Houston , Oliver S. Spencer , Steven J. Wright
IPC分类号： H01L21/28 , H01L21/336 , H01L29/49 , H01L29/78 , H01L21/266
CPC分类号： H01L29/6659 , H01L21/28247 , H01L29/4983 , H01L29/6656 , H01L29/7836 , Y10S148/114
摘要： A process to form poly sidegate LDD structures on buried channel MOSFETs is described. A polysilicon spacer is formed on the gate after source/drain processing. The spacer is later shorted to the main gate by implantation of neutral impurities. The process is particularly suited for SOI technology.
摘要翻译：描述了在掩埋沟道MOSFET上形成多边栅极LDD结构的工艺。在源/漏处理之后，在栅极上形成多晶硅间隔物。间隔物随后通过植入中性杂质而短路到主栅极。该工艺特别适用于SOI技术。

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