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1. 发明授权

US06765819B1 Magnetic memory device having improved switching characteristics 有权
标题翻译：具有改进的开关特性的磁存储器件
公开(公告)号：US06765819B1
公开(公告)日：2004-07-20
申请号：US10205531
申请日：2002-07-25
申请人： Manoj Bhattacharyya , Thomas C. Anthony , Frederick A. Perner , Steven C. Johnson
发明人： Manoj Bhattacharyya , Thomas C. Anthony , Frederick A. Perner , Steven C. Johnson
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
摘要翻译：公开了磁存储器件。在一个实施例中，该装置包括具有沿着第一方向对准的容易轴的存储单元，所述存储单元被配置为当仅沿着第一方向接收磁场时最容易从一个逻辑状态切换到另一逻辑状态;以及与所述存储单元相关联的磁偏置元件，所述磁偏置元件具有沿着不同于所述第一方向的第二方向排列的磁取向。

2. 发明授权

US06775196B2 Magnetic memory having a temperature compensated write circuit 有权
标题翻译：具有温度补偿写入电路的磁存储器
公开(公告)号：US06775196B2
公开(公告)日：2004-08-10
申请号：US10194767
申请日：2002-07-12
申请人： Frederick A. Perner , Manoj Bhattacharyya
发明人： Frederick A. Perner , Manoj Bhattacharyya
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C11/16
摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory includes a magnetic memory cell, a conductor which crosses the magnetic memory cell and a circuit coupled to the conductor configured to apply a modified magnetic field to the magnetic memory cell in response to temperature variations in the magnetic memory cell.
摘要翻译：公开了磁存储器。在一个实施例中，磁存储器包括磁存储器单元，穿过磁存储单元的导体和耦合到导体的电路，该电路被配置为响应于磁存储单元中的温度变化而将修改的磁场施加到磁存储单元。

3. 发明授权

US06564742B2 Over-temperature warning device 有权
标题翻译：超温报警装置
公开(公告)号：US06564742B2
公开(公告)日：2003-05-20
申请号：US09921145
申请日：2001-08-03
申请人： Frederick A Perner , Thomas Anthony , Manoj Bhattacharyya
发明人： Frederick A Perner , Thomas Anthony , Manoj Bhattacharyya
IPC分类号： G01K1106
CPC分类号： G01K11/06
摘要： A critical temperature warning apparatus and method to monitor the thermal history of a product such as a memory card. The apparatus comprises a critical temperature indicator, which is externally attached to a product to be monitored. The indicator indicates if the product has experienced a critical temperature. The critical temperature indicator may comprise a patterned array of wax, the wax having a melting point equal to the critical temperature. If the pattern of wax has been destroyed leaving a molten wax residue, then this indicates that the product has experienced a critical temperature. The critical temperature indicator may also include thermographic inks for indicating that a critical temperature has been experienced.
摘要翻译：一种用于监测诸如存储卡的产品的热历史的临界温度警告装置和方法。该装置包括临时温度指示器，其外部附接到要监视的产品。该指示器指示产品是否经历了临界温度。临界温度指示器可以包括蜡的图案化阵列，蜡的熔点等于临界温度。如果蜡的图案被破坏，留下熔融的蜡残留物，则表明该产品已经经历了临界温度。临界温度指示器还可以包括用于指示经历了临界温度的热成像油墨。

4. 发明授权

US06930369B2 Thin film device and a method of providing thermal assistance therein 有权
公开(公告)号：US06930369B2
公开(公告)日：2005-08-16
申请号：US10713510
申请日：2003-11-14
申请人： Janice H. Nickel , Manoj Bhattacharyya , Frederick A. Perner
发明人： Janice H. Nickel , Manoj Bhattacharyya , Frederick A. Perner
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8229 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675 , H01L43/08
摘要： A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.

5. 发明授权

US06667901B1 Dual-junction magnetic memory device and read method 有权
标题翻译：双结磁存储器件及读取方式
公开(公告)号：US06667901B1
公开(公告)日：2003-12-23
申请号：US10426381
申请日：2003-04-29
申请人： Frederick A. Perner , Manish Sharma , Manoj Bhattacharyya
发明人： Frederick A. Perner , Manish Sharma , Manoj Bhattacharyya
IPC分类号： G11C1115
CPC分类号： G11C11/1673 , G11C11/161
摘要： A magnetic memory device includes a first magnetic tunnel junction having a first reference ferromagnetic layer; a second magnetic tunnel junction having a second reference ferromagnetic layer; and an electrically conductive spacer layer between the first and second reference layers. The first and second reference layers are antiferromagnetically coupled.
摘要翻译：磁存储器件包括具有第一参考铁磁层的第一磁性隧道结; 具有第二参考铁磁层的第二磁性隧道结; 以及在第一和第二参考层之间的导电间隔层。第一和第二参考层是反铁磁耦合的。

6. 发明授权

US06643213B2 Write pulse circuit for a magnetic memory 有权
标题翻译：为磁存储器写入脉冲电路
公开(公告)号：US06643213B2
公开(公告)日：2003-11-04
申请号：US10096542
申请日：2002-03-12
申请人： Frederick A. Perner , Manoj Bhattacharyya
发明人： Frederick A. Perner , Manoj Bhattacharyya
IPC分类号： G11C800
CPC分类号： G11C11/16
摘要： A magnetic memory includes a memory cell and a conductor wherein the memory cell is crossed by the conductor. A write pulse generator is coupled to the conductor and is configured to provide a discharge current to the conductor during a write operation of the memory cell.
摘要翻译：磁存储器包括存储单元和导体，其中存储单元被导体交叉。写入脉冲发生器耦合到导体并被配置为在存储器单元的写入操作期间向导体提供放电电流。

7. 发明申请

US20050195649A1 Multi-bit MRAM device with switching nucleation sites 有权
标题翻译：具有开关成核位置的多位MRAM器件
公开(公告)号：US20050195649A1
公开(公告)日：2005-09-08
申请号：US11112815
申请日：2005-04-21
申请人： Janice Nickel , Manoj Bhattacharyya
发明人： Janice Nickel , Manoj Bhattacharyya
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616
摘要： A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
摘要翻译：磁存储单元包括第一磁阻装置和第二磁阻装置。第一磁阻装置具有第一感测层。第二磁阻装置与第一磁阻装置串联连接。第二磁阻装置具有第二感测层。至少一个控制的成核位置放置在第一感测层和第二感测层中的至少一个上。

8. 发明授权

US06919594B2 Magneto resistive storage device having a magnetic field sink layer 有权
标题翻译：具有磁场吸收层的磁阻存储装置
公开(公告)号：US06919594B2
公开(公告)日：2005-07-19
申请号：US10696991
申请日：2003-10-30
申请人： Manish Sharma , Thomas C. Anthony , Manoj Bhattacharyya
发明人： Manish Sharma , Thomas C. Anthony , Manoj Bhattacharyya
IPC分类号： H01L27/105 , G11C11/16 , H01L21/8246 , H01L43/08 , H01L29/76
CPC分类号： G11C11/16 , G11C11/161
摘要： An electro-magnetic device, such as magnetic memory device, is disclosed that includes means for structuring, attenuating or eliminating stray fields at the boundaries that produce an offset in the magneto-resistive response. The device comprises a conductive first layer and the attenuating means comprises a sink layer, electro-magnetically coupled to the first layer, to attenuate the stray boundary magneto-resistive offset at a boundary of the first layer during electrical operation.
摘要翻译：公开了一种诸如磁存储器件的电磁器件，其包括用于在产生磁阻响应中的偏移的边界处构造，衰减或消除杂散场的装置。该装置包括导电第一层，并且衰减装置包括电磁耦合到第一层的吸收层，以在电操作期间衰减第一层边界处的杂散边界磁阻偏移。

9. 发明申请

US20050104146A1 THIN FILM DEVICE AND A METHOD OF PROVIDING THERMAL ASSISTANCE THEREIN 有权
标题翻译：薄膜装置及其提供热辅助的方法
公开(公告)号：US20050104146A1
公开(公告)日：2005-05-19
申请号：US10713510
申请日：2003-11-14
申请人： Janice Nickel , Manoj Bhattacharyya , Frederick Perner
发明人： Janice Nickel , Manoj Bhattacharyya , Frederick Perner
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8229 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675 , H01L43/08
摘要： A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.
摘要翻译：公开了薄膜装置及其中提供热辅助的方法。因此，使用加热器材料来热辅助薄膜器件的操作。通过利用加热材料热辅助薄膜器件的操作，实现了薄膜器件的精度和性能的显着提高。本发明的第一方面是一种薄膜器件。所述薄膜器件包括至少一个图案化薄膜层，耦合到所述至少一个图案化薄膜层的加热器材料，用于向所述图案化薄膜层中的至少一个提供热辅助，以及耦合到所述加热器材料的导体，向加热器材料供应能量。

10. 发明授权

US06867468B2 Magnetic shielding for reducing magnetic interference 有权
标题翻译：磁屏蔽减少磁干扰
公开(公告)号：US06867468B2
公开(公告)日：2005-03-15
申请号：US10440279
申请日：2003-05-15
申请人： Manish Sharma , Manoj Bhattacharyya
发明人： Manish Sharma , Manoj Bhattacharyya
IPC分类号： G11C5/02 , G11C11/15 , H01L43/00 , H01L21/00
CPC分类号： G11C11/15 , G11C5/025
摘要： A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.
摘要翻译：磁存储器阵列包括多个磁存储器单元，与至少一个磁存储单元相邻设置的磁屏蔽，以减小相对于另一个磁存储单元的磁干扰;以及绝缘体，其被设置为至少分离来自至少一个磁存储单元的部分磁屏蔽。磁屏蔽可以是嵌入绝缘体中的磁屏蔽层，图案化磁屏蔽材料和/或磁性颗粒。

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