专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08530964B2 Semiconductor device including first and second semiconductor elements 有权
标题翻译：包括第一和第二半导体元件的半导体器件
公开(公告)号：US08530964B2
公开(公告)日：2013-09-10
申请号：US13314637
申请日：2011-12-08
申请人： Franz Hirler , Ulrich Glaser , Christian Lenzhofer
发明人： Franz Hirler , Ulrich Glaser , Christian Lenzhofer
IPC分类号： H01L29/66
CPC分类号： H01L29/7815 , H01L27/0255 , H01L27/0629 , H01L29/0634 , H01L29/407 , H01L29/7808 , H01L29/7813 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient α1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient α2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×α1
摘要翻译：半导体器件包括在第一端子和第二端子之间包括第一pn结的第一半导体元件。半导体器件还包括在第三端子和第四端子之间包括第二pn结的半导体元件。半导体元件还包括半导体本体，其包括第一半导体元件和第一半导体元件，该第一半导体元件被整体地集成。第一和第三端子电耦合到第一器件端子。第二和第四端子电耦合到第二器件端子。第一pn结的击穿电压Vbr1的温度系数α1和第二pn结的击穿电压Vbr2的温度系数α2具有相同的代数，并且在T = 300K时满足0.6×α1<α2<1.1×α1 ，其中Vbr2

2. 发明申请

US20130146970A1 Semiconductor Device Including First and Second Semiconductor Elements 有权
标题翻译：包括第一和第二半导体元件的半导体器件
公开(公告)号：US20130146970A1
公开(公告)日：2013-06-13
申请号：US13314637
申请日：2011-12-08
申请人： Franz Hirler , Ulrich Glaser , Christian Lenzhofer
发明人： Franz Hirler , Ulrich Glaser , Christian Lenzhofer
IPC分类号： H01L27/088
CPC分类号： H01L29/7815 , H01L27/0255 , H01L27/0629 , H01L29/0634 , H01L29/407 , H01L29/7808 , H01L29/7813 , H01L29/8611 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient α1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient α2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×α1
摘要翻译：半导体器件包括在第一端子和第二端子之间包括第一pn结的第一半导体元件。半导体器件还包括在第三端子和第四端子之间包括第二pn结的半导体元件。半导体元件还包括半导体本体，其包括第一半导体元件和第一半导体元件，该第一半导体元件被整体地集成。第一和第三端子电耦合到第一器件端子。第二和第四端子电耦合到第二器件端子。第一pn结的击穿电压Vbr1的温度系数α1和第二pn结的击穿电压Vbr2的温度系数α2具有相同的代数，并且在T = 300K时满足0.6×α1

3. 发明申请

US20130153916A1 Semiconductor Device Including a Diode 有权
标题翻译：包括二极管的半导体器件
公开(公告)号：US20130153916A1
公开(公告)日：2013-06-20
申请号：US13328371
申请日：2011-12-16
申请人： Joachim Weyers , Anton Mauder , Franz Hirler , Andreas Meiser , Ulrich Glaser
发明人： Joachim Weyers , Anton Mauder , Franz Hirler , Andreas Meiser , Ulrich Glaser
IPC分类号： H01L29/06
CPC分类号： H01L27/0255 , H01L27/06 , H01L27/0814 , H01L29/407 , H01L29/861 , H01L29/8611 , H01L29/8725
摘要： One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region.
摘要翻译：集成电路的一个实施例包括半导体本体。在半导体本体中，第一沟槽区域从第一表面延伸到半导体本体中。集成电路还包括包括阳极区域和阴极区域的二极管。阳极区域和阴极区域中的一个至少部分地布置在第一沟槽区域中。阳极区域和阴极区域中的另一个包括从第一沟槽区域的外部邻接阳极区域和阴极区域中的一个的第一半导体区域。

4. 发明授权

US09401355B2 Semiconductor device including a diode arranged in a trench 有权
标题翻译：半导体器件包括布置在沟槽中的二极管
公开(公告)号：US09401355B2
公开(公告)日：2016-07-26
申请号：US13328371
申请日：2011-12-16
申请人： Joachim Weyers , Anton Mauder , Franz Hirler , Andreas Meiser , Ulrich Glaser
发明人： Joachim Weyers , Anton Mauder , Franz Hirler , Andreas Meiser , Ulrich Glaser
IPC分类号： H01L29/66 , H01L29/02 , H01L23/62 , H01L27/06 , H01L29/861 , H01L27/08 , H01L27/02
CPC分类号： H01L27/0255 , H01L27/06 , H01L27/0814 , H01L29/407 , H01L29/861 , H01L29/8611 , H01L29/8725
摘要： One embodiment of an integrated circuit includes a semiconductor body. In the semiconductor body a first trench region extends into the semiconductor body from a first surface. The integrated circuit further includes a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench region. The other one of the anode region and the cathode region includes a first semiconductor region adjoining the one of the anode region and the cathode region from outside of the first trench region.
摘要翻译：集成电路的一个实施例包括半导体本体。在半导体本体中，第一沟槽区域从第一表面延伸到半导体本体中。集成电路还包括包括阳极区域和阴极区域的二极管。阳极区域和阴极区域中的一个至少部分地布置在第一沟槽区域中。阳极区域和阴极区域中的另一个包括从第一沟槽区域的外部邻接阳极区域和阴极区域中的一个的第一半导体区域。

5. 发明授权

US08643990B2 Protection circuit 有权
标题翻译：保护电路
公开(公告)号：US08643990B2
公开(公告)日：2014-02-04
申请号：US13112659
申请日：2011-05-20
申请人： Yiqun Cao , Herbert Gietler , Ulrich Glaser
发明人： Yiqun Cao , Herbert Gietler , Ulrich Glaser
IPC分类号： H02H3/20 , H02H9/04
CPC分类号： H02H9/046 , H01L23/60 , H01L27/0285 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A protection circuit includes a controllable discharge element having a load path coupled between a first second circuit nodes. The discharge element provides a discharge path between the first and the second circuit nodes when in an on state. A trigger circuit has a first connection coupled to the first circuit node and a second connections coupled to the second circuit node. The trigger circuit is configured to produce a drive signal that switches the discharge element to its on state when the voltage between the first and the second circuit nodes reaches a trigger value. A setting circuit coupled to the trigger circuit is configured to change the trigger value from a first trigger value to a second trigger value depending on a voltage between the first and the second circuit nodes and/or on the drive signal.
摘要翻译：保护电路包括可控放电元件，其具有耦合在第一第二电路节点之间的负载路径。当处于导通状态时，放电元件提供第一和第二电路节点之间的放电路径。触发电路具有耦合到第一电路节点的第一连接和耦合到第二电路节点的第二连接。触发电路被配置为当第一和第二电路节点之间的电压达到触发值时，产生将放电元件切换到其导通状态的驱动信号。耦合到触发电路的设置电路被配置为根据第一和第二电路节点之间的电压和/或驱动信号将触发值从第一触发值改变为第二触发值。

6. 发明申请

US20070158750A1 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor 有权
标题翻译：集成电路布置与冲击二极管或晶闸管以及制造和使用晶闸管的方法
公开(公告)号：US20070158750A1
公开(公告)日：2007-07-12
申请号：US11604519
申请日：2006-11-27
申请人： Ulrich Glaser , Harold Gossner , Kai Esmark
发明人： Ulrich Glaser , Harold Gossner , Kai Esmark
IPC分类号： H01L29/76
CPC分类号： H01L29/7436 , H01L27/0255 , H01L27/0266 , H01L27/0814 , H01L27/0817 , H01L29/87 , H01L2924/0002 , Y10S438/919 , Y10S438/922 , Y10S438/923 , H01L2924/00
摘要： An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
摘要翻译：集成电路装置包括Shockley二极管或晶闸管。在植入p型阱期间，二极管或晶闸管的内部区域被完全或部分屏蔽。这导致Shockley二极管或具有改善的电性能的晶闸管，特别是关于用作ESD保护元件的晶闸管。

7. 发明申请

US20050179088A1 ESD protective apparatus for a semiconductor circuit having an ESD protective circuit which makes contact with a substrate or guard ring contact 审中-公开
标题翻译：具有与衬底或保护环接触的ESD保护电路的半导体电路的ESD保护装置
公开(公告)号：US20050179088A1
公开(公告)日：2005-08-18
申请号：US11059778
申请日：2005-02-16
申请人： Ulrich Glaser , Harald Gossner , Jens Schneider , Martin Streibl , Silke Bargstadt-Franke
发明人： Ulrich Glaser , Harald Gossner , Jens Schneider , Martin Streibl , Silke Bargstadt-Franke
IPC分类号： H01L23/62 , H01L27/02
CPC分类号： H01L27/0266 , H01L27/0255
摘要： An electrostatic discharge (ESD) protective apparatus for a semiconductor circuit has at least one ESD protective element, which is connected between the substrate contact and a ground potential connection, and is electrically connected to the substrate contact. The ESD protective element may be in the form of an ESD protective diode or an ESD protective transistor. It is also possible to connect a resistor or an ESD protective transistor between the substrate contact and the ground potential connection as an ESD protective element, and additionally to connect an ESD protective diode or an ESD protective transistor between the substrate contact and a supply voltage potential connection.
摘要翻译：用于半导体电路的静电放电（ESD）保护装置具有至少一个ESD保护元件，其连接在基板触点和地电位连接之间，并且电连接到基板触点。 ESD保护元件可以是ESD保护二极管或ESD保护晶体管的形式。也可以在基板触点和接地电位连接之间连接一个电阻器或ESD保护晶体管作为ESD保护元件，另外还可以在基板触点和电源电压电位之间连接ESD保护二极管或ESD保护晶体管连接。

8. 发明授权

US08129292B2 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor 有权
标题翻译：集成电路布置与冲击二极管或晶闸管以及制造和使用晶闸管的方法
公开(公告)号：US08129292B2
公开(公告)日：2012-03-06
申请号：US12690776
申请日：2010-01-20
申请人： Ulrich Glaser , Harald Gossner , Kai Esmark
发明人： Ulrich Glaser , Harald Gossner , Kai Esmark
IPC分类号： H01L29/744 , H01L29/74
CPC分类号： H01L29/7436 , H01L27/0255 , H01L27/0266 , H01L27/0814 , H01L27/0817 , H01L29/87 , H01L2924/0002 , Y10S438/919 , Y10S438/922 , Y10S438/923 , H01L2924/00
摘要： An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
摘要翻译：集成电路装置包括Shockley二极管或晶闸管。在植入p型阱期间，二极管或晶闸管的内部区域被完全或部分屏蔽。这导致Shockley二极管或具有改善的电性能的晶闸管，特别是关于用作ESD保护元件的晶闸管。

9. 发明授权

US07888701B2 Integrated circuit arrangement with Shockley diode or thyristor and method for production and use of a thyristor 有权
标题翻译：集成电路布置与Shockley二极管或晶闸管以及制造和使用晶闸管的方法
公开(公告)号：US07888701B2
公开(公告)日：2011-02-15
申请号：US12690778
申请日：2010-01-20
申请人： Ulrich Glaser , Harald Gossner , Kai Esmark
发明人： Ulrich Glaser , Harald Gossner , Kai Esmark
IPC分类号： H01L29/744 , H01L29/74
CPC分类号： H01L29/7436 , H01L27/0255 , H01L27/0266 , H01L27/0814 , H01L27/0817 , H01L29/87 , H01L2924/0002 , Y10S438/919 , Y10S438/922 , Y10S438/923 , H01L2924/00
摘要： An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
摘要翻译：集成电路装置包括Shockley二极管或晶闸管。在植入p型阱期间，二极管或晶闸管的内部区域被完全或部分屏蔽。这导致Shockley二极管或具有改善的电性能的晶闸管，特别是关于用作ESD保护元件的晶闸管。

10. 发明申请

US20100120208A1 INTEGRATED CIRCUIT ARRANGEMENT WITH SHOCKLEY DIODE OR THYRISTOR AND METHOD FOR PRODUCTION AND USE OF A THYRISTOR 有权
标题翻译：集成电路安装与休克二极管或电容器和生产和使用THYRISTOR的方法
公开(公告)号：US20100120208A1
公开(公告)日：2010-05-13
申请号：US12690776
申请日：2010-01-20
申请人： Ulrich Glaser , Harald Gossner , Kai Esmark
发明人： Ulrich Glaser , Harald Gossner , Kai Esmark
IPC分类号： H01L21/04 , H01L21/02
CPC分类号： H01L29/7436 , H01L27/0255 , H01L27/0266 , H01L27/0814 , H01L27/0817 , H01L29/87 , H01L2924/0002 , Y10S438/919 , Y10S438/922 , Y10S438/923 , H01L2924/00
摘要： An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
摘要翻译：集成电路装置包括Shockley二极管或晶闸管。在植入p型阱期间，二极管或晶闸管的内部区域被完全或部分屏蔽。这导致Shockley二极管或具有改善的电性能的晶闸管，特别是关于用作ESD保护元件的晶闸管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式