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    • 9. 发明授权
    • Method for circuitizing over an edge of a circuit card
    • 电路卡边缘电路化方法
    • US6014809A
    • 2000-01-18
    • US33618
    • 1998-03-03
    • Robert D. Sebesta
    • Robert D. Sebesta
    • H05K3/00H05K3/10H05K3/38H05K3/40H05K3/02
    • H05K3/403H05K3/108H05K2201/09154H05K2203/0769H05K2203/095H05K3/0032H05K3/388H05K3/4076Y10T29/49082Y10T29/49126Y10T29/4913Y10T29/49144Y10T29/5102
    • The present invention provides a method of performing high density over the edge circuitization on circuit cards. In particular, the invention allows for circuits having width and spacing requirements of one millimeter or less to be placed over the edge of a substrate. The method includes the steps of: (1) angling the substrate such that the first surface, second surface and edge separating the two surfaces form an exposed region; (2) metallically sputter seeding the exposed region from a seeding source such that a metallic sputter seed layer is formed; (3) covering the exposed region with a dielectric material; (4) ablating portions of the dielectric material; (5) applying a conductive layer, for example, with copper plating, on the circuit path to form a circuit; (6) removing the remaining unablated dielectric material, thereby exposing portions of the metallic sputter seed layer that are adjacent to the circuit; and (7) removing the exposed portions of the metallic sputter seed layer that are not part of the circuit.
    • 本发明提供了一种在电路卡上的边缘电路上执行高密度的方法。 特别地,本发明允许具有一毫米或更小的宽度和间距要求的电路放置在衬底的边缘上。 该方法包括以下步骤:(1)使衬底倾斜,使得分离两个表面的第一表面,第二表面和边缘形成暴露区域; (2)从接种源金属溅射接触曝光区域,从而形成金属溅射种子层; (3)用介电材料覆盖所述暴露区域; (4)烧蚀介电材料的部分; (5)在电路上施加例如镀铜的导电层以形成电路; (6)去除剩余的未铺放的电介质材料,从而暴露与电路相邻的金属溅射种子层的部分; 和(7)去除金属溅射种子层的不是电路的一部分的暴露部分。