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1. 发明授权

US06376273B2 Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device 失效
标题翻译：用于II-VI半导体光转换器件中欧姆接触的钝化覆盖层
公开(公告)号：US06376273B2
公开(公告)日：2002-04-23
申请号：US09093588
申请日：1998-06-08
申请人： Fen-Ren Chien , Michael A. Haase , Thomas J. Miller
发明人： Fen-Ren Chien , Michael A. Haase , Thomas J. Miller
IPC分类号： H01L2100
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/28 , H01L33/40 , H01S5/0421 , H01S5/347
摘要： A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.
摘要翻译： II-VI半导体器件包括一叠半导体层。提供电耦合到堆叠的欧姆接触。欧姆接触暴露于氧化物质时具有氧化速率。钝化覆盖层覆盖欧姆接触，氧化速率小于欧姆接触的氧化速率。

2. 发明授权

US5767534A Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device 失效
公开(公告)号：US5767534A
公开(公告)日：1998-06-16
申请号：US804768
申请日：1997-02-24
申请人： Fen-Ren Chien , Michael A. Haase , Thomas J. Miller
发明人： Fen-Ren Chien , Michael A. Haase , Thomas J. Miller
IPC分类号： H01L31/02 , H01L33/28 , H01L33/40 , H01L33/44 , H01S5/028 , H01S5/042 , H01S5/347 , H01L33/00
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/40 , H01S5/347 , H01L33/28 , H01S5/0421
摘要： A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.

3. 发明授权

US09431584B2 Light converting and emitting device with suppressed dark-line defects 有权
标题翻译：具有抑制黑线缺陷的光转换和发射装置
公开(公告)号：US09431584B2
公开(公告)日：2016-08-30
申请号：US13698384
申请日：2011-05-31
申请人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
发明人： Michael A. Haase , Thomas J. Miller , Terry L. Smith , Xiaoguang Sun , Junqing Xie
IPC分类号： H01L33/50 , H01L33/08 , H01L21/02
CPC分类号： H01L33/504 , H01L21/02477 , H01L21/0256 , H01L21/02568 , H01L33/08 , H01L33/50
摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.
摘要翻译：描述发光系统。特别地，描述了在这些系统中使用的发光系统和光转换组件。发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

4. 发明授权

US08994071B2 Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms 有权
标题翻译：利用铟耗尽机制在含铟衬底上生长的半导体器件
公开(公告)号：US08994071B2
公开(公告)日：2015-03-31
申请号：US13264509
申请日：2010-04-30
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L29/22 , H01L33/28 , H01L33/00 , H01L21/02 , H01L33/08 , H01L33/50
CPC分类号： H01L33/0087 , H01L21/02392 , H01L21/02463 , H01L21/02466 , H01L21/02469 , H01L21/0256 , H01L21/02568 , H01L21/02576 , H01L21/02631 , H01L33/08 , H01L33/28 , H01L33/502
摘要： We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.
摘要翻译：我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是在生长期间从衬底中的铟原子迁移到II-V层的结果。因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟，以保持良好的设备性能。

5. 发明授权

US08835963B2 Light converting and emitting device with minimal edge recombination 有权
标题翻译：具有最小边缘复合的光转换和发射装置
公开(公告)号：US08835963B2
公开(公告)日：2014-09-16
申请号：US13701065
申请日：2011-05-25
申请人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
发明人： Michael A. Haase , Junqing Xie , Thomas J. Miller , Terry L. Smith
IPC分类号： H01L33/00 , H01L33/50 , H01L33/36
CPC分类号： H01L33/36 , H01L33/005 , H01L33/50
摘要： Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.
摘要翻译：公开了发光系统（100），特别是利用半导体波长转换区域（104）的发光系统以及制造这种系统的方法。产生这种系统的发光系统和方法试图阻止与波长转换区域相关联的游离载体的重组。

6. 发明授权

US08338838B2 Down-converted light source with uniform wavelength emission 有权
标题翻译：具有均匀波长发射的下变频光源
公开(公告)号：US08338838B2
公开(公告)日：2012-12-25
申请号：US12810052
申请日：2008-12-09
申请人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L. Smith , Tommie W. Kelley , Catherine A. Leatherdale
发明人： Xiaoguang Sun , Michael A. Haase , Thomas J. Miller , Terry L. Smith , Tommie W. Kelley , Catherine A. Leatherdale
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置附着到半导体波长转换器。每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。峰值波长的第二范围比峰值波长的第一范围窄。半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

7. 发明申请

US20120097921A1 Cadmium-free Re-Emitting Semiconductor Construction 失效
标题翻译：无镉重发半导体结构
公开(公告)号：US20120097921A1
公开(公告)日：2012-04-26
申请号：US13379858
申请日：2010-06-25
申请人： Terry L. Smith , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
发明人： Terry L. Smith , Michael A. Haase , Thomas J. Miller , Xiaoguang Sun
IPC分类号： H01L33/04
CPC分类号： H01L33/08 , H01L33/26 , H01L33/502
摘要： Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.
摘要翻译：公开的再发射半导体结构（RSC）可以提供不含镉的全色RGB或白光发射器件。一些实施例可以包括包含III-V半导体并且将第一光子能量的光转换成较小光子能量的光的势阱，以及包括具有大于第一光子能级的带隙能量的II-VI半导体的窗口光子能量。一些实施例可以包括将具有第一光子能量的光转换成具有较小光子能量的光并且包括基本上不含Cd的II-VI半导体的势阱。一些实施例可以包括包括第一III-V半导体并且将具有第一光子能量的光转换成具有较小光子能量的光的势阱，以及包括第二III-V半导体并且具有带隙能量大于第一光子能量。

8. 发明授权

US08148741B2 Polychromatic LED's and related semiconductor devices 有权
标题翻译：多色LED及相关半导体器件
公开(公告)号：US08148741B2
公开(公告)日：2012-04-03
申请号：US12781227
申请日：2010-05-17
申请人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Xiaoguang Sun
IPC分类号： H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0008 , H01L33/06
摘要： A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
摘要翻译：提供了一种半导体器件，其包括位于pn结内的第一势阱和不位于pn结内的第二势阱。势阱可能是量子阱。半导体器件通常是LED，并且可以是白色或近白色的光LED。半导体器件还可以包括不位于pn结内的第三势阱。半导体器件还可以包括围绕或紧密或紧邻第二或第三量子阱的吸收层。此外，提供了包括根据本发明的半导体器件的图形显示装置和照明装置。

9. 发明申请

US20110156002A1 LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS 审中-公开
标题翻译：具有轻型封闭组件的光源
公开(公告)号：US20110156002A1
公开(公告)日：2011-06-30
申请号：US13060850
申请日：2009-07-28
申请人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen , Thomas J. Miller
发明人： Catherine A. Leatherdale , Michael A. Haase , Todd A. Ballen , Thomas J. Miller
IPC分类号： H01L33/06
CPC分类号： H01L33/08 , H01L33/04 , H01L33/44 , H01L33/50
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括从电致发光器件的顶表面发射第一波长的光的电致发光器件。发光系统还包括靠近电致发光器件的侧面的结构，用于阻挡否则将离开侧面的第一波长的光。发光系统还包括包括II-VI势阱的再发射半导体结构。再发射半导体结构接收离开电致发光器件的第一波长光，并将接收的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

10. 发明授权

US07902543B2 Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission 有权
标题翻译：适应短波长的LED用于多色，宽带或“白色”发射
公开(公告)号：US07902543B2
公开(公告)日：2011-03-08
申请号：US12715957
申请日：2010-03-02
申请人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
发明人： Thomas J. Miller , Michael A. Haase , Terry L. Smith , Xiaoguang Sun
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/14 , H01L2224/05541 , H01L2224/05005
摘要： An adapted LED is provided comprising a short-wavelength LED and a re-emitting semiconductor construction, wherein the re-emitting semiconductor construction comprises at least one potential well not located within a pn junction. The potential well(s) are typically quantum well(s). The adapted LED may be a white or near-white light LED. The re-emitting semiconductor construction may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the potential well(s). In addition, graphic display devices and illumination devices comprising the adapted LED according to the present invention are provided.
摘要翻译：提供了一种适配的LED，其包括短波长LED和再发射半导体结构，其中再发射半导体结构包括不位于pn结内的至少一个势阱。势阱通常是量子阱。适配的LED可以是白色或近白色的LED灯。再发射半导体结构可以另外包括围绕或紧密或紧邻势阱的吸收层。此外，提供了包括根据本发明的适配LED的图形显示装置和照明装置。

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