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    • 6. 发明授权
    • Cadmium-free re-emitting semiconductor construction
    • 无镉再发射半导体结构
    • US08541803B2
    • 2013-09-24
    • US13379858
    • 2010-06-25
    • Terry L. SmithMichael A. HaaseThomas J. MillerXiaoguang Sun
    • Terry L. SmithMichael A. HaaseThomas J. MillerXiaoguang Sun
    • H01L33/50H01L33/00
    • H01L33/08H01L33/26H01L33/502
    • Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.
    • 公开的再发射半导体结构(RSC)可以提供不含镉的全色RGB或白光发射器件。 一些实施例可以包括包含III-V半导体并且将第一光子能量的光转换成较小光子能量的光的势阱,以及包括具有大于第一光子能级的带隙能量的II-VI半导体的窗口 光子能量。 一些实施例可以包括将具有第一光子能量的光转换成具有较小光子能量的光并且包括基本上不含Cd的II-VI半导体的势阱。 一些实施例可以包括包括第一III-V半导体并且将具有第一光子能量的光转换成具有较小光子能量的光的势阱,以及包括第二III-V半导体并且具有带隙能量 大于第一光子能量。
    • 9. 发明授权
    • Type II broadband or polychromatic LEDs
    • II型宽带或多色LED
    • US08148742B2
    • 2012-04-03
    • US12748956
    • 2010-03-29
    • Thomas J. MillerMichael A. Haase
    • Thomas J. MillerMichael A. Haase
    • H01L33/00
    • H01L33/06H01L33/08H01L33/28
    • An LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%, and wherein at least one of the Type II interfaces is within a pn junction. Alternately, an LED is provided comprising two or more light-emitting Type II interfaces wherein at least two of the Type II interfaces differ in transition energy by at least 5%, or more typically by at least 10%. The Type II interfaces may include interfaces from a layer which is an electron quantum well and not a hole quantum well, interfaces to a layer which is a hole quantum well and not an electron quantum well; and interfaces that satisfy both conditions simultaneously. The Type II interfaces may be within a pn or pin junction or not within a pn or pin junction. In the later case, emission from the Type II interfaces may be photopumped by a nearby light source. The LED may be a white or near-white light LED. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
    • 提供包括两个或更多个发光II型界面的LED,其中II型界面中的至少两个界面的转换能量不同于至少5%,或更通常至少10%,并且其中至少一种类型 II接口位于pn结内。 或者,提供包括两个或更多个发光II型界面的LED,其中至少两个II型界面的跃迁能量不同于至少5%,或更通常至少10%。 II型界面可以包括来自作为电子量子阱而不是空穴量子阱的层的界面,其与作为空穴量子阱而不是电子量子阱的层接合; 和同时满足两个条件的接口。 II型接口可以在pn或pin结内,或者不在pn或pin结内。 在后一种情况下,II型接口的发射可能被附近的光源照射。 LED可以是白色或近白色的LED灯。 此外,提供了包括根据本发明的半导体器件的图形显示装置和照明装置。