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1. 发明授权

US07768815B2 Optoelectronic memory devices 失效
标题翻译：光电存储器件
公开(公告)号：US07768815B2
公开(公告)日：2010-08-03
申请号：US11161941
申请日：2005-08-23
申请人： Fen Chen , Richard S. Kontra , Tom C. Lee , Theodore M. Levin , Christopher D. Muzzy , Timothy D. Sullivan
发明人： Fen Chen , Richard S. Kontra , Tom C. Lee , Theodore M. Levin , Christopher D. Muzzy , Timothy D. Sullivan
IPC分类号： G11C13/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/004 , G11C13/04 , G11C13/047 , G11C2013/0054 , H01L45/1213 , H01L45/145
摘要： A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the material absorbing heat; sending an electric current through the resistive/reflective region so as to cause a reflectance change in the resistive/reflective region from a first reflectance value to a second reflectance value different from the first reflectance value; and optically reading the reflectance change in the resistive/reflective region.
摘要翻译：一种结构及其操作方法。该方法包括在衬底上提供电阻/反射区域，其中电阻/反射区域包括具有由于材料吸收热而改变材料的反射率的特性的材料; 发送电流通过电阻/反射区域，以使电阻/反射区域的反射率变化从第一反射率值到不同于第一反射率值的第二反射率值; 并且光学地读取电阻/反射区域中的反射率变化。

2. 发明授权

US08288747B2 Optoelectronic memory devices 有权
标题翻译：光电存储器件
公开(公告)号：US08288747B2
公开(公告)日：2012-10-16
申请号：US12842158
申请日：2010-07-23
申请人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
发明人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
IPC分类号： H01L29/00 , H01L47/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/004 , G11C13/04 , G11C13/047 , G11C2013/0054 , H01L45/1213 , H01L45/145
摘要： A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.
摘要翻译：一个结构。该结构包括衬底，衬底上的电阻/反射区域以及被配置为确定电阻/反射区域中的反射率和/或电阻变化的光源/光检测和/或感测放大器电路。电阻/反射区域包括具有材料的反射率和/或电阻的特性的材料由于材料的相变而改变。电阻/反射区域被配置为通过材料的相变来响应通过电阻/反射区域的电流和/或投射在电阻/反射区域上的激光束，这导致反射和/ 电阻/反射区域从第一反射率和/或电阻值到不同于第一反射率和/或电阻值的第二反射率和/或电阻值。

3. 发明申请

US20120287707A1 OPTOELECTRONIC MEMORY DEVICES 审中-公开
标题翻译：光电存储器件
公开(公告)号：US20120287707A1
公开(公告)日：2012-11-15
申请号：US13558541
申请日：2012-07-26
申请人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
发明人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/004 , G11C13/04 , G11C13/047 , G11C2013/0054 , H01L45/1213 , H01L45/145
摘要： A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.
摘要翻译：一个结构。该结构包括衬底，衬底上的电阻/反射区域以及被配置为确定电阻/反射区域中的反射率和/或电阻变化的光源/光检测和/或感测放大器电路。电阻/反射区域包括具有材料的反射率和/或电阻的特性的材料由于材料的相变而改变。电阻/反射区域被配置为通过材料的相变来响应通过电阻/反射区域的电流和/或投射在电阻/反射区域上的激光束，这导致反射和/ 电阻/反射区域从第一反射率和/或电阻值到不同于第一反射率和/或电阻值的第二反射率和/或电阻值。

4. 发明申请

US20100290264A1 OPTOELECTRONIC MEMORY DEVICES 有权
标题翻译：光电存储器件
公开(公告)号：US20100290264A1
公开(公告)日：2010-11-18
申请号：US12842158
申请日：2010-07-23
申请人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
发明人： Fen Chen , Richard Steven Kontra , Tom C. Lee , Theodore M. Levin , Christopher David Muzzy , Timothy Dooling Sullivan
IPC分类号： G11C13/04 , G11C11/00
CPC分类号： G11C13/0009 , G11C13/0004 , G11C13/004 , G11C13/04 , G11C13/047 , G11C2013/0054 , H01L45/1213 , H01L45/145
摘要： A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.
摘要翻译：一个结构。该结构包括衬底，衬底上的电阻/反射区域以及被配置为确定电阻/反射区域中的反射率和/或电阻变化的光源/光检测和/或感测放大器电路。电阻/反射区域包括具有材料的反射率和/或电阻的特性的材料由于材料的相变而改变。电阻/反射区域被配置为通过材料的相变来响应通过电阻/反射区域的电流和/或投射在电阻/反射区域上的激光束，这导致反射和/ 电阻/反射区域从第一反射率和/或电阻值到不同于第一反射率和/或电阻值的第二反射率和/或电阻值。

5. 发明授权

US07671604B2 Nanoscale fault isolation and measurement system 失效
标题翻译：纳米级故障隔离测量系统
公开(公告)号：US07671604B2
公开(公告)日：2010-03-02
申请号：US12116497
申请日：2008-05-07
申请人： Philip V. Kaszuba , Theodore M. Levin , David P. Vallett
发明人： Philip V. Kaszuba , Theodore M. Levin , David P. Vallett
IPC分类号： H01H31/02 , G01R27/08 , G01R31/02
CPC分类号： G01R1/06705 , G01R1/0466 , G01R31/2844 , G01R31/2886
摘要： Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.
摘要翻译：公开了一种在公共平台上提供多个近场扫描隔离技术的故障隔离和测量系统。该系统包括使用专门的保持器来为位于设备或材料的区域内的内部电路结构提供电偏压。该系统还使用多探头组件。每个探头安装在围绕公共参考点的支撑结构上，并且是不同测量或故障隔离工具的组件。组件移动使得每个探针可以从设备或材料上的相同固定位置获得测量值。可以改变支撑结构和/或保持器的相对定位，以便从区域内的多个相同的固定位置获得测量值。此外，该系统使用处理器来提供与每个信号相关联的分层图像，并且用于将这些图像与设计数据精确对准，以便表征或隔离设备或材料内的故障位置。

6. 发明授权

US07202689B2 Sensor differentiated fault isolation 失效
标题翻译：传感器差分故障隔离
公开(公告)号：US07202689B2
公开(公告)日：2007-04-10
申请号：US10907787
申请日：2005-04-15
申请人： Kevin L. Condon , Theodore M. Levin , Leah M. P. Pastel , David P. Vallett
发明人： Kevin L. Condon , Theodore M. Levin , Leah M. P. Pastel , David P. Vallett
IPC分类号： G01R31/02
CPC分类号： G01R31/311 , G01R31/302 , G01R31/31728 , G01R31/3187
摘要： Disclosed is an apparatus and method for diagnostically testing circuitry within a device. The apparatus and method incorporate the use of energy (e.g., light, heat, magnetic, electric, etc.) applied directly to any location on the device that can affect the electrical activity within the circuitry being tested in order to produce an indicator of a response. A local sensor (e.g., photonic, magnetic, etc.) is positioned at another location on the device where the sensor can detect the indicator of the response within the circuitry. A correlator is configured with response location correlation software and/or circuit tracing software so that when the indicator is detected, the correlator can determine the exact location of a response causing a device failure and/or trace the connectivity of the circuitry, based upon the location of the energy source and the location of the sensor.
摘要翻译：公开了一种用于诊断测试设备内的电路的装置和方法。该装置和方法包括直接应用于设备上可能影响被测电路内的电活动的任何位置的能量（例如光，热，磁，电等）的使用，以便产生一个响应。本地传感器（例如，光子，磁性等）位于设备上的另一位置处，其中传感器可以检测电路内的响应的指示符。相关器配置有响应位置相关软件和/或电路跟踪软件，使得当检测到指示符时，相关器可基于导致设备故障的确定位置和/或跟踪电路的连通性来确定电路的连接性能源的位置和传感器的位置。

7. 发明授权

US07511510B2 Nanoscale fault isolation and measurement system 有权
标题翻译：纳米级故障隔离测量系统
公开(公告)号：US07511510B2
公开(公告)日：2009-03-31
申请号：US11164654
申请日：2005-11-30
申请人： Philip V. Kaszuba , Theodore M. Levin , David P. Vallett
发明人： Philip V. Kaszuba , Theodore M. Levin , David P. Vallett
IPC分类号： H01H31/02 , G01R27/08 , G01R31/02
CPC分类号： G01R1/06705 , G01R1/0466 , G01R31/2844 , G01R31/2886
摘要： Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.
摘要翻译：公开了一种在公共平台上提供多个近场扫描隔离技术的故障隔离和测量系统。该系统包括使用专门的保持器来为位于设备或材料的区域内的内部电路结构提供电偏压。该系统还使用多探头组件。每个探头安装在围绕公共参考点的支撑结构上，并且是不同测量或故障隔离工具的组件。组件移动使得每个探针可以从设备或材料上的相同固定位置获得测量值。可以改变支撑结构和/或保持器的相对定位，以便从区域内的多个相同的固定位置获得测量值。此外，该系统使用处理器来提供与每个信号相关联的分层图像，并且用于将这些图像与设计数据精确对准，以便表征或隔离设备或材料内的故障位置。

8. 发明授权

US07397263B2 Sensor differentiated fault isolation 有权
标题翻译：传感器差分故障隔离
公开(公告)号：US07397263B2
公开(公告)日：2008-07-08
申请号：US11670001
申请日：2007-02-01
申请人： Kevin L. Condon , Theodore M. Levin , Leah M. Pastel , David P. Vallett
发明人： Kevin L. Condon , Theodore M. Levin , Leah M. Pastel , David P. Vallett
IPC分类号： G01R31/02
CPC分类号： G01R31/311 , G01R31/302 , G01R31/31728 , G01R31/3187
摘要： Disclosed is an apparatus and method for diagnostically testing circuitry within a device. The apparatus and method incorporate the use of energy (e.g., light, heat, magnetic, electric, etc.) applied directly to any location on the device that can affect the electrical activity within the circuitry being tested in order to produce an indicator of a response. A local sensor (e.g., photonic, magnetic, etc.) is positioned at another location on the device where the sensor can detect the indicator of the response within the circuitry. A correlator is configured with response location correlation software and/or circuit tracing software so that when the indicator is detected, the correlator can determine the exact location of a response causing a device failure and/or trace the connectivity of the circuitry, based upon the location of the energy source and the location of the sensor.
摘要翻译：公开了一种用于诊断测试设备内的电路的装置和方法。该装置和方法包括直接应用于设备上可能影响被测电路内的电活动的任何位置的能量（例如光，热，磁，电等）的使用，以便产生一个响应。本地传感器（例如，光子，磁性等）位于设备上的另一位置处，其中传感器可以检测电路内的响应的指示符。相关器被配置有响应位置相关软件和/或电路跟踪软件，使得当检测到指示符时，相关器可基于导致设备故障的确定位置和/或跟踪电路的连通性来确定电路的连接性能源的位置和传感器的位置。

9. 发明申请

US20080238457A1 NANOSCALE FAULT ISOLATION AND MEASUREMENT SYSTEM 失效
标题翻译： NANOSCALE故障分离和测量系统
公开(公告)号：US20080238457A1
公开(公告)日：2008-10-02
申请号：US12116497
申请日：2008-05-07
申请人： Philip V. Kaszuba , Theodore M. Levin , David P. Vallett
发明人： Philip V. Kaszuba , Theodore M. Levin , David P. Vallett
IPC分类号： G01R31/28 , G06K9/00
CPC分类号： G01R1/06705 , G01R1/0466 , G01R31/2844 , G01R31/2886
摘要： Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.
摘要翻译：公开了一种在公共平台上提供多个近场扫描隔离技术的故障隔离和测量系统。该系统包括使用专门的保持器来为位于设备或材料的区域内的内部电路结构提供电偏压。该系统还使用多探头组件。每个探头安装在围绕公共参考点的支撑结构上，并且是不同测量或故障隔离工具的组件。组件移动使得每个探针可以从设备或材料上的相同固定位置获得测量值。可以改变支撑结构和/或保持器的相对定位，以便从区域内的多个相同的固定位置获得测量值。此外，该系统使用处理器来提供与每个信号相关联的分层图像，并且用于将这些图像与设计数据精确对准，以便表征或隔离设备或材料内的故障位置。

10. 发明授权

US07116094B2 Apparatus and method for transmission and remote sensing of signals from integrated circuit devices 失效
标题翻译：用于从集成电路器件传输和遥感信号的装置和方法
公开(公告)号：US07116094B2
公开(公告)日：2006-10-03
申请号：US10710683
申请日：2004-07-28
申请人： Theodore M. Levin , David P. Vallett
发明人： Theodore M. Levin , David P. Vallett
IPC分类号： G01R15/20 , G01R1/20 , G01R15/18 , G01R33/02
CPC分类号： G01R31/2886 , G01R15/20 , G01R31/3004 , G01R31/3025
摘要： An apparatus and a method for testing semiconductor devices, such as individual integrated circuits in semiconductor chips, by directing a current in each circuit through a respective selected predetermined path to establish, in each circuit, a respective focused magnetic field and converting each such magnetic field into a respective voltage which, when fed to respective amplifier gated with a respective selected frequency, will modulate each such respective voltage. Each such respective voltage is then used to create a respective pulsating magnetic field that when detected by a respective remote magnetic sensor will provide a series of respective signals representative of the current in the respective circuit from which the pulsating magnetic field was derived. By applying each such series of voltages to a lock-in amplifier synchronized at the respective frequencies gating each respective amplifier the current in each circuit being tested can be accurately determined and will be free of errors due to circuit noise or crosstalk between the circuits under test.
摘要翻译：一种用于测试半导体芯片中的各个集成电路的半导体器件的装置和方法，通过在每个电路中引导电流通过相应的选定的预定路径，以在每个电路中建立相应的聚焦磁场并将每个这样的磁场当被馈送到以相应选定频率门控的相应放大器时，将调制每个这样的相应电压。然后使用每个这样的各个电压来产生相应的脉动磁场，当相应的远程磁传感器检测到时，将提供一系列相应的信号，该信号表示从其产生脉动磁场的相应电路中的电流。通过将每个这样的一系列电压施加到锁定放大器，该锁定放大器在各自的频率上同步，门控各个放大器，可以精确地确定正在测试的每个电路中的电流，并且将由于被测电路之间的电路噪声或串扰而没有错误。

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