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    • 1. 发明申请
    • Polymer solar cell and manufacturing method thereof
    • 聚合物太阳能电池及其制造方法
    • US20080149174A1
    • 2008-06-26
    • US11802436
    • 2007-05-23
    • Fang-Chung ChenChih-Wei ChuChu-Jung KoYi-Kai Lin
    • Fang-Chung ChenChih-Wei ChuChu-Jung KoYi-Kai Lin
    • H01L31/06
    • H01L51/4253B82Y10/00H01L51/0036H01L51/0037H01L51/0047Y02E10/549Y02P70/521
    • A polymer solar cell and a manufacturing method thereof are disclosed. The cell includes a substrate, a first electrode located on top of the substrate, a conductive polymer layer having a conductive polymer and an additive located on the first electrode, a semiconductor layer over the conductive polymer layer and a second electrode over the semiconductor layer. The manufacturing method of the polymer solar cell is composed of following steps: growing a first electrode on a substrate; mixing an additive and a conductive polymer to form a mixture; depositing the mixture on the first electrode to form a conductive polymer layer; depositing a semiconductor layer on the conductive polymer layer and evaporating a second electrode on the semiconductor layer. By adding additive into the conductive polymer, resistance of the conductive polymer layer is reduced and efficiency of the cell is improved.
    • 公开了一种聚合物太阳能电池及其制造方法。 电池包括衬底,位于衬底顶部的第一电极,具有导电聚合物的导电聚合物层和位于第一电极上的添加剂,导电聚合物层上的半导体层和半导体层上的第二电极。 聚合物太阳能电池的制造方法由以下步骤构成:在基板上生长第一电极; 混合添加剂和导电聚合物以形成混合物; 将所述混合物沉积在所述第一电极上以形成导电聚合物层; 在导电聚合物层上沉积半导体层并蒸发半导体层上的第二电极。 通过在导电聚合物中添加添加剂,导电聚合物层的电阻降低,电池的效率提高。
    • 3. 发明申请
    • Organic active-layer solution for polymer solar cell and method for preparing the same
    • 聚合物太阳能电池的有机活性层溶液及其制备方法
    • US20090217974A1
    • 2009-09-03
    • US12149647
    • 2008-05-06
    • Fang-Chung ChenHsin-Chen TsengChu-Jung Ko
    • Fang-Chung ChenHsin-Chen TsengChu-Jung Ko
    • H01L31/00
    • H01L51/0007H01L51/0036H01L51/4253Y02E10/549Y02P70/521
    • An organic active-layer solution for a polymer solar cell and a method for preparing the same are provided, wherein the organic active-layer solution comprises an organic active-layer material, a first organic solvent and a second organic solvent. The first organic solvent has a boiling point ranging from 50° C. to 200° C. while the second organic solvent has a boiling point ranging from 150° C. to 300° C. The second organic solvent is added into the first organic solvent to dissolve the organic active-layer material. As the second organic solvent has a higher boiling point (a lower evaporation speed), it can directly lower an evaporation speed of the organic active-layer solution, thereby simplifying a manufacturing process of the polymer solar cell and increasing a power conversion efficiency of the polymer solar cell.
    • 提供了一种聚合物太阳能电池用有机活性层溶液及其制备方法,其中有机活性层溶液包含有机活性层材料,第一有机溶剂和第二有机溶剂。 第一有机溶剂的沸点范围为50℃至200℃,而第二有机溶剂的沸点范围为150℃至300℃。将第二有机溶剂加入到第一有机溶剂中 以溶解有机活性层材料。 由于第二有机溶剂具有较高的沸点(较低的蒸发速度),因此可以直接降低有机活性层溶液的蒸发速度,从而简化了聚合物太阳能电池的制造过程,提高了聚合物太阳能电池的功率转换效率 聚合物太阳能电池。
    • 6. 发明申请
    • JUNCTION STRUCTURE OF ORGANIC SEMICONDUCTOR DEVICE, ORGANIC THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF
    • 有机半导体器件的结构结构,有机薄膜晶体管及其制造方法
    • US20070102697A1
    • 2007-05-10
    • US11164092
    • 2005-11-10
    • Fang-Chung ChenChiao-Shun Chuang
    • Fang-Chung ChenChiao-Shun Chuang
    • H01L29/08
    • H01L51/105H01L51/057
    • A junction structure of an organic semiconductor device including an organic semiconductor layer, a conductive layer and a modifying layer is provided. The modifying layer is formed between the organic semiconductor layer and the conductive layer, wherein the modifying layer includes an inorganic compound or an organic complex compound. An organic thin film transistor including a gate, a source/drain, a dielectric layer, an organic semiconductor layer and at least a modifying layer is also provided. The gate is electrically isolated from the source/drain. The dielectric layer is disposed between the gate and the source/drain. The organic semiconductor layer is disposed between the source and the drain. The modifying layer is disposed between the organic semiconductor layer and the source/drain, wherein the modifying layer includes an inorganic compound or an organic complex compound.
    • 提供了包括有机半导体层,导电层和改性层的有机半导体器件的结结构。 在有机半导体层和导电层之间形成改性层,其中改性层包括无机化合物或有机络合物。 还提供了包括栅极,源极/漏极,电介质层,有机半导体层和至少改性层的有机薄膜晶体管。 栅极与源极/漏极电隔离。 电介质层设置在栅极和源极/漏极之间。 有机半导体层设置在源极和漏极之间。 改性层设置在有机半导体层和源极/漏极之间,其中改性层包括无机化合物或有机络合物。
    • 7. 发明授权
    • Manufacturing method for organic optoelectronic thin film
    • 有机光电薄膜的制造方法
    • US08252627B2
    • 2012-08-28
    • US13102286
    • 2011-05-06
    • Fang-Chung ChenMing-Kai Chuang
    • Fang-Chung ChenMing-Kai Chuang
    • H01L51/40
    • H01L51/003H01L51/0003H01L51/4253Y02E10/549Y02P70/521
    • Disclosed is a manufacturing method for an organic optoelectronic thin film comprising the steps of providing a substrate and a first electrode; forming a semiconductor layer on the substrate, wherein the semiconductor layer includes polyethylene glycol (PEG); forming a conductive polymer layer on the first electrode; disposing the substrate and the semiconductor layer on the conductive polymer layer and adhering the semiconductor layer to the conductive polymer layer; and removing the substrate; and forming a second electrode on the semiconductor layer. A first adhesion between the semiconductor layer and the substrate is generated. A second adhesion between the semiconductor layer and the conductive polymer layer is generated. The second adhesion is greater than the first adhesion so that while the substrate is removed, the semiconductor layer and the conductive polymer layer are still adhered.
    • 公开了一种有机光电薄膜的制造方法,包括以下步骤:提供基板和第一电极; 在所述衬底上形成半导体层,其中所述半导体层包括聚乙二醇(PEG); 在所述第一电极上形成导电聚合物层; 将所述基板和所述半导体层设置在所述导电聚合物层上,并将所述半导体层粘合到所述导电聚合物层; 并除去基板; 以及在所述半导体层上形成第二电极。 产生半导体层和衬底之间的第一粘附。 产生半导体层和导电聚合物层之间的第二粘附。 第二粘合力大于第一粘合力,使得在去除衬底时,半导体层和导电聚合物层仍然粘附。
    • 10. 发明申请
    • GATE DIELECTRIC STRUCTURE AND AN ORGANIC THIN FILM TRANSISTOR BASED THEREON
    • 盖特电介质结构及其有机薄膜晶体管
    • US20070215957A1
    • 2007-09-20
    • US11459409
    • 2006-07-24
    • Fang-Chung ChenChiao-Shun ChuangYung-Sheng Lin
    • Fang-Chung ChenChiao-Shun ChuangYung-Sheng Lin
    • H01L29/94H01L29/76H01L31/00
    • H01L51/0537H01L51/0529
    • A gate dielectric structure and an organic thin film transistor based thereon, wherein the gate dielectric structure comprises: an organic-inorganic composite layer and an organic insulation layer, and the gate dielectric structure is applied to an organic thin film transistor. As the organic-inorganic composite layer of the gate dielectric structure has an organic insulation matrix blended with inorganic surface-modified particles, it can achieve a high dielectric constant. Further, as the organic insulation layer can modify the surface of the organic-inorganic composite layer, not only the leakage current is reduced, but also the crystalline structure of the organic semiconductor layer becomes more orderly. Thus, the carrier mobility is raised, the current output of the element is increased, and the performance of the element is also greatly enhanced.
    • 一种栅极电介质结构和基于其的有机薄膜晶体管,其中所述栅极介电结构包括:有机 - 无机复合层和有机绝缘层,并且所述栅极电介质结构被施加到有机薄膜晶体管。 由于栅极电介质结构的有机 - 无机复合层具有与无机表面改性粒子混合的有机绝缘基体,因此可以实现高介电常数。 此外,由于有机绝缘层可以改变有机 - 无机复合层的表面,不仅漏电流降低,而且有机半导体层的晶体结构变得更有序。 因此,载流子迁移率提高,元件的电流输出增加,元件的性能也大大提高。