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1. 发明申请

US20040140535A1 Semiconductor device, method of forming epitaxial film, and laser ablation device 审中-公开
标题翻译：半导体器件，形成外延膜的方法和激光烧蚀装置
公开(公告)号：US20040140535A1
公开(公告)日：2004-07-22
申请号：US10755448
申请日：2004-01-13
申请人： FUJITSU LIMITED
发明人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
IPC分类号： H01L023/58
CPC分类号： H01L21/02266 , C23C14/28 , C30B23/02 , C30B25/18 , C30B29/32 , H01L21/02197 , H01L21/02293 , H01L21/02304 , H01L21/31691
摘要： The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon. substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
摘要翻译：本发明提供一种包括单晶硅衬底的半导体器件; 以及在单晶硅上通过外延生长形成具有钙钛矿结构的单晶氧化物薄膜。基质。单晶氧化物薄膜直接与单晶硅衬底的表面接触，并且含有与硅反应的二价金属。

2. 发明申请

US20030169574A1 IC card and method of operating the same 有权
标题翻译： IC卡及其操作方法
公开(公告)号：US20030169574A1
公开(公告)日：2003-09-11
申请号：US10361587
申请日：2003-02-11
申请人： FUJITSU LIMITED
发明人： Kenji Maruyama , Mineharu Tsukada
IPC分类号： H05K007/02 , H05K007/06 , H05K007/08 , H05K007/10
CPC分类号： G06K19/0716 , G06K19/0701 , G06K19/07345 , G06K19/077 , G06K19/07703
摘要： The present invention aims to provide an IC card, requiring no special additional devices, not causing a liquid leakage of an aqueous electrolyte, requiring no battery, and capable of displaying information easily and cheaply by internally generated electric power and remaining the information even after the voltage is stopped applying. An IC card of the present invention has an electric power generator capable of generating electric power by an external stimulus and a display driven by the generated electric power so as to display information. The IC card of the present invention preferably have aspects of that the electric power generator is a piezoelectric transducer, a nonvolatile memory for storing information displayed on the display is provide, the nonvolatile memory is a ferroelectric memory, the display is formed by an electrochromic display device, and the electrochromic display device is an all solid-state electrochromic display device.
摘要翻译：本发明的目的在于提供一种IC卡，不需要特殊的附加装置，不会引起电解液的液体泄漏，不需要电池，并且能够通过内部产生的电力容易且廉价地显示信息，并且即使在电压停止施加。本发明的IC卡具有能够通过外部刺激产生电力的电力发生器和由所产生的电力驱动的显示器以显示信息。本发明的IC卡优选地具有发电机是压电换能器的方面，提供用于存储显示在显示器上的信息的非易失性存储器，非易失性存储器是铁电存储器，显示器由电致变色显示器电致变色显示装置是全固态电致变色显示装置。

3. 发明申请

US20030113986A1 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20030113986A1
公开(公告)日：2003-06-19
申请号：US10292436
申请日：2002-11-13
申请人： FUJITSU LIMITED
发明人： Yoshiaki Sakamoto , Kenji Maruyama
IPC分类号： H01L021/20 , H01L021/44
CPC分类号： H01L28/60 , C23C16/4402 , C30B25/02 , C30B29/32 , H01L28/55
摘要： A method of producing a semiconductor device in which a film is formed on a substrate by a chemical vapor deposition (CVD) process, the method comprising purifying a source gas for a film to be formed by selectively removing at least one of components contained in the source gas, which does not pertain to reactions for the deposition of the film, based on the difference in molecular size between the component to be removed and other components.
摘要翻译：一种制造半导体器件的方法，其中通过化学气相沉积（CVD）工艺在衬底上形成膜，所述方法包括通过选择性地除去包含在所述膜中的成分中的至少一种元素来净化待形成的膜的源气体源气体，其不属于用于沉积膜的反应，基于要除去的组分与其它组分之间的分子尺寸的差异。

4. 发明申请

US20040033672A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20040033672A1
公开(公告)日：2004-02-19
申请号：US10635648
申请日：2003-08-07
申请人： FUJITSU LIMITED
发明人： Osamu Matsuura , Kenji Maruyama
IPC分类号： H01L021/20
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： After a MOS transistor is formed on a semiconductor substrate, an Ir film, LT film, PZT film, and IrO2 film are formed in this order on the entire surface. Although the LT film itself is not a ferroelectric film, a ferroelectric film is formed by a stacked film of the LT film and PZT film. In a ferroelectric capacitor having this ferroelectric film, the LT film does not contain Pb, so the alignment can be readily controlled during the film formation. This raises the alignment of the LT film. The crystal structure of the LT film is a perovskite structure similar to that of the PZT film. Since the PZT film is formed on this LT film, the alignment of the LT film is taken over when the PZT film is grown. This raises the alignment of the PZT film.
摘要翻译：在半导体衬底上形成MOS晶体管之后，在整个表面上依次形成Ir膜，LT膜，PZT膜和IrO 2膜。虽然LT膜本身不是铁电体膜，但是由LT膜和PZT膜的叠层膜形成铁电体膜。在具有这种铁电体膜的铁电电容器中，LT膜不含有Pb，因此可以容易地在成膜时控制取向。这提高了LT膜的对准。 LT膜的晶体结构是类似于PZT膜的钙钛矿结构。由于在该LT膜上形成PZT膜，所以当PZT膜生长时，LT膜被取向。这提高了PZT膜的对准。

5. 发明申请

US20030171002A1 Method of manufacturing a semiconductor device and method of forming a film 失效
标题翻译：制造半导体器件的方法和形成膜的方法
公开(公告)号：US20030171002A1
公开(公告)日：2003-09-11
申请号：US10364379
申请日：2003-02-12
申请人： FUJITSU LIMITED
发明人： Shigeyoshi Umemiya , Kenji Maruyama
IPC分类号： H01L021/31
CPC分类号： C23C16/54
摘要： A semiconductor device manufacturing method includes the steps of (a) introducing a first substrate into a first CVD chamber; (b) raising the first substrate temperature to a predetermined value; (c) growing a film on the first substrate by supplying vapor phase material in a material line to the first chamber; (d) introducing a second substrate into a second CVD chamber; (e) raising the second substrate temperature to the predetermined value; and (f) growing a film on the second substrate by supplying the vapor phase material to the second chamber. Steps (c) and (f) supply the vapor phase material selectively to the first and second chambers, respectively. In step (f) after step (c), the chamber to which the vapor phase material is supplied is switched from the first chamber to the second chamber so that the pressure of the vapor phase material in the material line is kept substantially constant.
摘要翻译：半导体器件制造方法包括以下步骤：（a）将第一衬底引入第一CVD室; （b）将第一衬底温度升高到预定值; （c）通过将材料线中的气相材料供应到第一室，在第一基板上生长膜; （d）将第二衬底引入第二CVD室; （e）将所述第二基板温度升高到所述预定值; 和（f）通过将气相材料供应到第二室而在第二基板上生长膜。步骤（c）和（f）分别将气相材料选择性地供应到第一和第二室。在步骤（f）之后的步骤（f）中，将供应气相材料的室从第一室切换到第二室，使得材料管线中气相材料的压力基本上保持不变。

6. 发明申请

US20030146287A1 Authentication circuit, semiconductor device, process for operating the same, IC card, and process for operating the same 失效
标题翻译：认证电路，半导体器件，操作过程，IC卡及其操作过程
公开(公告)号：US20030146287A1
公开(公告)日：2003-08-07
申请号：US10294711
申请日：2002-11-15
申请人： Fujitsu Limited
发明人： Kenji Maruyama
IPC分类号： G06K019/06
CPC分类号： G06K19/07372 , G06K19/073
摘要： An authentication circuit containing at least two types of ferroelectrics having different Curie temperatures and properties of retaining charges by residual polarization. An authentication signal stored in one of the ferroelectrics is erased when the ferroelectrics are held in a Curie temperature or more of the one of the ferroelectrics and below a Curie temperature of the ferroelectrics 2. In an authentication circuit, preferably one of the ferroelectrics outputs a primary authentication signal and, when the ferroelectric 2 receives the primary authentication signal, the ferroelectric 2 outputs a secondary authentication signal, and a plurality of ferroelectrics are formed of two or more types of elements and have different element compositions, the two or more elements are selected from Na, K, Ba, Cd, Hf, O, Pb, Zr, Ti, La, Ca, Sr, Tl, Bi, a rare earth element, Nb, Ta, W, Mo, Fe, Co, and Cr.
摘要翻译：包含至少两种具有不同居里温度的铁电体和通过残余极化保持电荷的性质的认证电路。当铁电体保持在一个铁电体的居里温度以上且低于铁电体2的居里温度时，存储在铁电体之一中的认证信号被擦除。在认证电路中，优选地，铁电体中的一个输出初级认证信号，当铁电体2接收到初始认证信号时，铁电体2输出二次认证信号，多个铁电体由两种以上的元件形成，具有不同的元件组成，选自Na，K，Ba，Cd，Hf，O，Pb，Zr，Ti，La，Ca，Sr，Tl，Bi，稀土元素，Nb，Ta，W，Mo，Fe，Co和Cr。

7. 发明申请

US20030085426A1 Semiconductor device, method of forming epitaxial film, and laser ablation device 失效
标题翻译：半导体器件，形成外延膜的方法和激光烧蚀装置
公开(公告)号：US20030085426A1
公开(公告)日：2003-05-08
申请号：US10093519
申请日：2002-03-11
申请人： Fujitsu Limited
发明人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
IPC分类号： H01L027/01
CPC分类号： H01L21/02266 , C23C14/28 , C30B23/02 , C30B25/18 , C30B29/32 , H01L21/02197 , H01L21/02293 , H01L21/02304 , H01L21/31691
摘要： The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
摘要翻译：本发明提供一种包括单晶硅衬底的半导体器件; 以及在单晶硅衬底上通过外延生长形成具有钙钛矿结构的单晶氧化物薄膜。单晶氧化物薄膜直接与单晶硅衬底的表面接触，并且含有与硅反应的二价金属。

8. 发明申请

US20040195605A1 Electronic device with electrode and its manufacture 失效
标题翻译：带电极的电子设备及其制造
公开(公告)号：US20040195605A1
公开(公告)日：2004-10-07
申请号：US10821841
申请日：2004-04-12
申请人： FUJITSU LIMITED
发明人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
IPC分类号： H01L021/00 , H01L029/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.
摘要翻译：一种制造电子器件的方法包括以下步骤：（a）制备（001）取向的ReO 3层; 和（b）在ReO 3层上形成具有钙钛矿结构的（001）取向氧化物铁电层。优选地，步骤（a）包括以下步骤：（a-1）制备（001）取向的MgO层; 和（a-2）在MgO层上形成（001）取向的ReO 3层。提供一种能够获得大极化的铁电体层的电子装置及其制造方法。

9. 发明申请

US20040135183A1 Ferroelectric capacitor, process for production thereof and semiconductor device using the same 失效
标题翻译：铁电电容器，其制造方法和使用其的半导体器件
公开(公告)号：US20040135183A1
公开(公告)日：2004-07-15
申请号：US10743814
申请日：2003-12-24
申请人： FUJITSU LIMITED
发明人： Osamu Matsuura , Kenji Maruyama , Kazuaki Takai
IPC分类号： H01L029/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56
摘要： A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.
摘要翻译：铁电电容器包括一对电极，并且至少一个铁电体保持在该对电极之间，其中铁电体包括由原子力显微镜确定的表面粗糙度（RMS）为10nm以上的第一铁电层; 并且第二铁电层被布置为与第一铁电层相邻并且具有5nm或更小的RMS。一种工艺通过在等于或高于第一铁电层承受铁电晶体结构的结晶温度的温度下，在一对电极中的一个或其上方形成第一铁电层来制造这种铁电电容器，并且形成第二铁电层铁电层在第一铁电体层上的温度低于第二铁电层呈铁电晶体结构的结晶温度。

10. 发明申请

US20040043520A1 Device having capacitor and its manufacture 有权
标题翻译：具有电容器及其制造的装置
公开(公告)号：US20040043520A1
公开(公告)日：2004-03-04
申请号：US10647246
申请日：2003-08-26
申请人： FUJITSU LIMITED
发明人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
IPC分类号： H01L021/00
CPC分类号： H01L28/55 , H01L21/31691 , H01L28/60 , H03H9/02574
摘要： A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.
摘要翻译：具有电容器元件的器件包括：具有非取向第一表面的下体; 形成在下体的第一表面上的下电极，下电极含有导电金属氧化物，不含有贵金属，例如LaNiO 3，导电金属氧化物具有（0,0）取向的ABO 3型钙钛矿结构; 形成在下部电极上的强电介质层，具有菱形ABO 3型硅酸盐结构，所述强电介质层优选（0 1）与所述下部电极的取向一致，所述上部电极形成在所述强电介质层上。

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