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1. 发明授权

US10283719B2 Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film 有权
公开(公告)号：US10283719B2
公开(公告)日：2019-05-07
申请号：US15884512
申请日：2018-01-31
申请人： FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
发明人： Masashi Koyanagi , Hiroaki Tsuyama , Eiji Fukuzaki , Yoshihisa Usami , Tetsuya Watanabe , Takashi Goto , Toshihiro Okamoto , Junichi Takeya
IPC分类号： C07D517/04 , H01L51/00 , H01L29/786 , H01L51/05 , C09B57/00 , C09B69/00
摘要： An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film.An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

2. 发明授权

US09143713B2 Solid-state imaging device and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US09143713B2
公开(公告)日：2015-09-22
申请号：US14038391
申请日：2013-09-26
申请人： FUJIFILM CORPORATION
发明人： Takashi Goto
IPC分类号： H01L27/00 , H04N5/378 , H01L27/146
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/14609 , H01L27/14641
摘要： The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit as defined herein are arranged in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a protection circuit as defined herein; the protection circuit has an impurity region as defined herein; the output transistor has an impurity region as defined herein; and the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels as defined herein.
摘要翻译：本发明涉及一种固态成像装置，其中包括形成在半导体衬底上方的光电转换部分和如本文所定义的MOS型信号读取电路的像素排列成阵列形式，其中：光电转换部分包括：像素电极，对电极和光电转换层; 偏置电压施加到如本文所定义的对电极; 信号读取电路包括如本文所定义的电荷存储部分，输出晶体管和保护电路; 保护电路具有如本文所定义的杂质区域; 输出晶体管具有如本文所定义的杂质区域; 并且保护电路的杂质区域和输出晶体管的杂质区域与本文所定义的每个相邻的两个像素共同使用。

3. 发明授权

US08817149B2 Solid-state imaging device and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US08817149B2
公开(公告)日：2014-08-26
申请号：US13732988
申请日：2013-01-02
申请人： FUJIFILM Corporation
发明人： Takashi Goto
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14647 , H01L27/14667 , H04N5/355 , H04N5/3698 , H04N5/374
摘要： A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND
摘要翻译：固态成像装置包括光电转换层，MOS晶体管电路。光电转换层形成在半导体衬底上。 MOS晶体管电路读出与光电转换层中产生的电荷对应的信号，然后在半导体衬底中形成具有给定极性的电荷。 MOS晶体管电路包括电荷累积部分，复位晶体管和输出晶体管。电荷累积部分与光电转换层电连接。复位晶体管将电荷累积部分的电位复位到复位电位。输出晶体管输出对应于电荷累积部分的电位的信号。复位晶体管和输出晶体管具有极性与给定极性相反的载流子。在MOS晶体管电路中，满足下式（1）：GND

4. 发明授权

US10985327B2 Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor 有权
公开(公告)号：US10985327B2
公开(公告)日：2021-04-20
申请号：US16358910
申请日：2019-03-20
申请人： FUJIFILM Corporation
发明人： Takashi Goto , Eiji Fukuzaki , Tetsuya Watanabe
IPC分类号： H01L51/00 , C07D517/14 , C07D493/14 , C07D495/14 , C07D513/14 , C07D498/14 , H01L29/786 , H01L51/05
摘要： Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat.
Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm. X, Y, and Z each independently represent a specific ring-constituting atom. R1 and R2 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. R3 and R4 each independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

5. 发明授权

US08953078B2 Solid-state imaging device and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US08953078B2
公开(公告)日：2015-02-10
申请号：US14034438
申请日：2013-09-23
申请人： Fujifilm Corporation
发明人： Takashi Goto
IPC分类号： H04N3/14 , H04N5/335 , H04N5/3745 , H01L27/146 , H04N5/361 , H04N5/374
CPC分类号： H04N5/3745 , H01L27/14609 , H01L27/14632 , H01L27/14643 , H04N5/361 , H04N5/374
摘要： The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.
摘要翻译：本发明涉及一种固态成像装置，其中各自包括形成在半导体衬底上的光电转换部分的像素和形成在半导体衬底上的MOS型信号读取电路，用于读出对应于在光电转换部分以阵列形式布置，其中：光电转换部分包括如本文所定义的像素电极，对电极和光电转换层; 偏置电压施加到如本文所定义的对电极; 信号读取电路包括如本文所定义的电荷存储部分，输出晶体管和复位晶体管; 电荷存储部分包括如本文所定义的第一电荷存储区域，第二电荷存储区域和分离/连接区域; 并且输出晶体管输出与第二电荷存储区域的电位相对应的信号。

6. 发明授权

US10629818B2 Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film 有权
公开(公告)号：US10629818B2
公开(公告)日：2020-04-21
申请号：US15885857
申请日：2018-02-01
申请人： FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
发明人： Masashi Koyanagi , Hiroaki Tsuyama , Eiji Fukuzaki , Yoshihisa Usami , Tetsuya Watanabe , Takashi Goto , Toshihiro Okamoto , Junichi Takeya
IPC分类号： H01L51/00 , H01B1/00 , C07D345/00 , C07D421/14 , C09B57/00 , H01L51/05 , H01L29/786 , H01B1/12 , C09D5/24
CPC分类号： H01L51/0071 , C07D345/00 , C07D421/14 , C09B57/00 , C09D5/24 , H01B1/12 , H01L29/786 , H01L51/0068 , H01L51/05 , H01L51/0003 , H01L51/0004 , H01L51/0005 , H01L51/0545 , H01L51/0558
摘要： A compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. The organic thin-film transistor contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

7. 发明授权

US10622572B2 Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film 有权
公开(公告)号：US10622572B2
公开(公告)日：2020-04-14
申请号：US15885859
申请日：2018-02-01
申请人： FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
发明人： Masashi Koyanagi , Hiroaki Tsuyama , Eiji Fukuzaki , Yoshihisa Usami , Tetsuya Watanabe , Takashi Goto , Toshihiro Okamoto , Junichi Takeya
IPC分类号： H01L51/00 , H01B1/00 , C07F7/18 , H01B1/12 , C07F7/08 , H01L51/05
CPC分类号： H01L51/0094 , C07F7/0812 , C07F7/1804 , H01B1/12 , H01L51/0074 , H01L51/0003 , H01L51/0004 , H01L51/0005 , H01L51/0007 , H01L51/0012 , H01L51/0545 , H01L51/0558
摘要： An object of the present invention is to provide an organic thin-film transistor which has an organic semiconductor film produced using a compound having an excellent solubility in organic solvents and has an excellent carrier mobility, a compound, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, a method for manufacturing an organic thin-film transistor, and an organic semiconductor film.
An organic thin-film transistor of the present invention contains a compound which is represented by General Formula (1) or General Formula (2) in an organic semiconductor film (organic semiconductor layer) thereof and has a molecular weight of 3,000 or less.

In General Formula (1) and General Formula (2), at least one of R5, . . . , or R8 is a group other than a hydrogen atom.

8. 发明授权

US10312447B2 Organic semiconductor element, manufacturing method thereof, compound, organic semiconductor composition, organic semiconductor film, and manufacturing method thereof 有权
公开(公告)号：US10312447B2
公开(公告)日：2019-06-04
申请号：US15696194
申请日：2017-09-06
申请人： FUJIFILM CORPORATION
发明人： Tetsu Kitamura , Yosuke Yamamoto , Fumiko Tamakuni , Yuta Shigenoi , Takashi Goto , Tetsuya Watanabe
IPC分类号： H01L51/00 , C08L65/00 , H01L29/786 , H01L51/05 , C08G61/12 , C09D165/00
摘要： Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A (1)

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