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    • 7. 发明授权
    • Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure
    • 制造具有量子线的半导体结构的方法和包括这种结构的半导体器件
    • US06696372B2
    • 2004-02-24
    • US10014257
    • 2001-12-07
    • Benzhong WangSoo Jin Chua
    • Benzhong WangSoo Jin Chua
    • H01L2100
    • B82Y20/00B82Y10/00C30B23/002C30B23/02C30B25/02C30B29/605H01L21/02395H01L21/0243H01L21/02433H01L21/02463H01L21/02507H01L21/02513H01L21/02546H01L21/0259H01L21/0262H01L29/125H01L33/06H01S5/3203H01S5/3403H01S5/341
    • A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction. Quantum wires are then spontaneously formed in situ along edges of the multi-atomic steps during epitaxial growth of a semiconductor with a larger or smaller lattice constant than the substrate but with a band gap narrower than that of the underlying material. Further deposition of a layer of semiconductor with a lattice constant within 1% of the substrate but with a band gap wider than that of the wire material then buries the quantum wires between this layer and the substrate layers. These layers are free of defects. Crystal and energy level structures of the quantum wire such as linear density, lateral and vertical dimension, and emission wavelength of photoluminescence can be easily controlled by selecting the angle of inclination of the substrate, lattice mismatch and different combinations of materials. A semiconductor laser with the active layer comprising quantum wires made by this method is also disclosed.
    • 描述了一种制造具有自组织量子线的半导体结构的方法。 该方法包括在朝向[110]方向倾斜的(001)取向的半导体衬底上形成多原子台阶。 然后,在具有比衬底更大或更小的晶格常数的半导体的外延生长中,但是具有比下面的材料窄的带隙的带隙,在多原子步骤的边缘上原位自发形成量子线。 晶格常数在衬底的1%内但具有比线材宽的带隙的半导体层的进一步沉积然后将量子线埋在该层和衬底层之间。 这些层没有缺陷。 量子线的晶体和能级结构如线密度,横向和垂直尺寸以及光致发光的发射波长可以通过选择衬底的倾斜角度,晶格失配和材料的不同组合来容易地控制。 还公开了一种具有由该方法制成的量子线的有源层的半导体激光器。
    • 8. 发明申请
    • MANUFACTURING METHOD FOR SUBSTRATE WITH ELECTRODE ATTACHED
    • 带电极的基板的制造方法
    • US20120286250A1
    • 2012-11-15
    • US13391123
    • 2010-08-11
    • Kyoko YamamotoHong Yee LowFeng Xiang ZhangBenzhong Wang
    • Kyoko YamamotoHong Yee LowFeng Xiang ZhangBenzhong Wang
    • H01L51/56H01L27/32H01L51/52
    • H01L51/0096H01L51/5268H01L51/5275H05B33/02H05B33/10Y02E10/549Y02P70/521
    • A process for producing a substrate with electrode for an organic electroluminescent device comprising a low-refractive index layer, a functional layer, and a transparent electrode that are laminated in this order, the substrate being for an organic electroluminescent device wherein the refractive index n1 of the electrode, the refractive index n2 of the functional layer, and the refractive index n3 of the low-refractive index layer satisfy the following formula (1): { 0.3 ≧ ( n   1 - n   2 ) ≧ 0 n   1 ≧ n   2 > n   3 ( 1 ) , the process comprising the step of forming the low-refractive index layer by forming raised and depressed portions on the surface of the low-refractive index layer by means of imprinting that uses a mold wherein multiple particles having an average particle size of 1.0 μm to 200 μm are laid on the surface of the base substrate of the mold, the step of forming the functional layer by applying a coating solution containing a material that will become the functional layer onto the surface of the low-refractive index layer wherein the raised and depressed portions have been formed and curing the coating, and the step of forming the electrode on the functional layer.
    • 一种用于生产具有用于有机电致发光器件的电极的衬底的方法,该有机电致发光器件包括依次层叠的低折射率层,功能层和透明电极,该衬底用于有机电致发光器件,其中折射率n1 电极,功能层的折射率n2和低折射率层的折射率n3满足下式(1):{0.3≥(n)1〜n 2} 2≥0n (1),该方法包括通过在低折射率层的表面上形成凸起和凹陷部分的方式形成低折射率层的步骤,通过印迹 使用其中平均粒径为1.0μm至200μm的多个颗粒被放置在模具的基底基材的表面上的模具,通过涂布含有材料的涂布溶液形成功能层的步骤 这将成为在低折射率层的表面上的功能层,其中已经形成凸起和凹陷部分并固化涂层,以及在功能层上形成电极的步骤。