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1. 发明申请

US20080182420A1 ION BEAM TREATMENT FOR THE STRUCTURAL INTEGRITY OF AIR-GAP III-NITRIDE DEVICES PRODUCED BY THE PHOTOELECTROCHEMICAL (PEC) ETCHING 审中-公开
标题翻译：由光电化学（PEC）蚀刻生产的空气 - 氮气III-硝酸盐装置的结构完整性的离子束处理
公开(公告)号：US20080182420A1
公开(公告)日：2008-07-31
申请号：US11940876
申请日：2007-11-15
申请人： Evelyn L. Hu , Shuji Nakamura , Yong Seok Choi , Rajat Sharma , Chiou-Fu Wang
发明人： Evelyn L. Hu , Shuji Nakamura , Yong Seok Choi , Rajat Sharma , Chiou-Fu Wang
IPC分类号： H01L21/302
CPC分类号： H01L33/10 , H01L33/0075 , H01L33/0095
摘要： A method for ensuring the structural integrity of III-nitride opto-electronic or opto-mechanical air-gap nano-structured devices, comprising (a) performing ion beam implantation in a region of the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device, wherein the milling significantly locally modifies a material property in the region to provide the structural integrity; and (b) performing a band-gap selective photo-electro-chemical (PEC) etch on the III-nitride opto-electronic and opto-mechanical air-gap nano-structured device. The method can be used to fabricate distributed Bragg reflectors or photonic crystals, for example. The method also comprises the suitable design of distributed Bragg reflector (DBR) structures for the PEC etching and the ion-beam treatment, the suitable design of photonic crystal distributed Bragg reflector (PCDBR) structures for PEC etching and the ion-beam treatment, the suitable placement of protection layers to prevent the ion-beam damage to optical activity and PEC etch selectivity, and a suitable annealing treatment for curing the material quality after the ion-beam treatment.
摘要翻译：一种用于确保III族氮化物光电子或光电机械气隙纳米结构器件的结构完整性的方法，包括（a）在III族氮化物光电子和光机电空气的区域中进行离子束注入其中所述研磨显着地局部地修饰该区域中的材料性质以提供结构完整性; 和（b）在III族氮化物光电子和光机电气隙纳米结构器件上进行带隙选择性光电化学（PEC）蚀刻。该方法可用于制造分布式布拉格反射器或光子晶体。该方法还包括用于PEC蚀刻和离子束处理的分布式布拉格反射器（DBR）结构的合适设计，用于PEC蚀刻和离子束处理的光子晶体分布布拉格反射器（PCDBR）结构的合适设计，保护层的适当放置以防止离子束损伤光学活性和PEC蚀刻选择性，以及适当的退火处理以在离子束处理后固化材料质量。

2. 发明授权

US07550395B2 Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte 失效
标题翻译：通过改变半导体结构相对于电解质的局部电化学电位来控制光电化学（PEC）蚀刻
公开(公告)号：US07550395B2
公开(公告)日：2009-06-23
申请号：US11263314
申请日：2005-10-31
申请人： Evelyn L. Hu , Shuji Nakamura , Elaine D. Haberer , Rajat Sharma
发明人： Evelyn L. Hu , Shuji Nakamura , Elaine D. Haberer , Rajat Sharma
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30635 , B82Y20/00 , H01L33/10 , H01S5/1075 , H01S5/18316 , H01S5/2081 , H01S5/34333 , H01S2304/12
摘要： A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.
摘要翻译：通过适当地布置妨碍半导体结构内的电子流的电阻层或层，局部地控制半导体结构或器件的电位，从而局部控制横向和/或垂直光电化学（PEC）蚀刻速率的方法，以及 /或通过在PEC蚀刻期间将阴极定位成与半导体结构的特定层接触。

3. 发明申请

US20060110926A1 Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte 失效
公开(公告)号：US20060110926A1
公开(公告)日：2006-05-25
申请号：US11263314
申请日：2005-10-31
申请人： Evelyn Hu , Shuji Nakamura , Elaine Haberer , Rajat Sharma
发明人： Evelyn Hu , Shuji Nakamura , Elaine Haberer , Rajat Sharma
IPC分类号： H01L21/302
CPC分类号： H01L21/30635 , B82Y20/00 , H01L33/10 , H01S5/1075 , H01S5/18316 , H01S5/2081 , H01S5/34333 , H01S2304/12
摘要： A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that impede electron flow within the semiconductor structure, and/or by positioning a cathode in contact with specific layers of the semiconductor structure during PEC etching.

4. 发明授权

US08643036B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08643036B2
公开(公告)日：2014-02-04
申请号：US13550433
申请日：2012-07-16
申请人： Rajat Sharma , Paul Morgan Pattison , John Francis Kaeding , Shuji Nakamura
发明人： Rajat Sharma , Paul Morgan Pattison , John Francis Kaeding , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/22 , H01S5/0207 , H01S5/10 , H01S5/1053 , H01S5/34333
摘要： A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.
摘要翻译：一种半导体发光二极管及其制造方法，其中含铟（In）的发光层以及随后的器件层沉积在织构表面上。所得装置是无磷白色光源。

5. 发明授权

US08227820B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08227820B2
公开(公告)日：2012-07-24
申请号：US11054271
申请日：2005-02-09
申请人： Rajat Sharma , Paul Morgan Pattison , John Francis Kaeding , Shuji Nakamura
发明人： Rajat Sharma , Paul Morgan Pattison , John Francis Kaeding , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/22 , H01S5/0207 , H01S5/10 , H01S5/1053 , H01S5/34333
摘要： A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.
摘要翻译：一种半导体发光二极管及其制造方法，其中含铟（In）的发光层以及随后的器件层沉积在织构表面上。所得装置是无磷白色光源。

6. 发明申请

US20070093073A1 Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权
标题翻译：用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
公开(公告)号：US20070093073A1
公开(公告)日：2007-04-26
申请号：US11444946
申请日：2006-06-01
申请人： Robert Farrell , Troy Baker , Arpan Chakraborty , Benjamin Haskell , P. Pattison , Rajat Sharma , Umesh Mishra , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Robert Farrell , Troy Baker , Arpan Chakraborty , Benjamin Haskell , P. Pattison , Rajat Sharma , Umesh Mishra , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

7. 发明授权

US08686466B2 Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices 有权
标题翻译：用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
公开(公告)号：US08686466B2
公开(公告)日：2014-04-01
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

8. 发明授权

US07858996B2 Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices 有权
标题翻译：生长半极（Al，In，Ga，B）N光电器件的方法
公开(公告)号：US07858996B2
公开(公告)日：2010-12-28
申请号：US11676999
申请日：2007-02-20
申请人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译：一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。本发明还公开了一种制造分面表面的方法。一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。分面表面通常是半极性平面。

9. 发明申请

US20070252164A1 METHOD FOR GROWTH OF SEMIPOLAR (Al,In,Ga,B)N OPTOELECTRONIC DEVICES 有权
标题翻译：用于生长半导体（Al，In，Ga，B）N光电器件的方法
公开(公告)号：US20070252164A1
公开(公告)日：2007-11-01
申请号：US11676999
申请日：2007-02-20
申请人： Hong Zhong , John Kaeding , Rajat Sharma , James Speck , Steven DenBaars , Shuji Nakamura
发明人： Hong Zhong , John Kaeding , Rajat Sharma , James Speck , Steven DenBaars , Shuji Nakamura
IPC分类号： H01L33/00 , H01L21/00 , H01L29/06
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译：一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。本发明还公开了一种制造分面表面的方法。一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。分面表面通常是半极性平面。

10. 发明授权

US08203159B2 Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices 有权
标题翻译：生长半极（Al，In，Ga，B）N光电器件的方法
公开(公告)号：US08203159B2
公开(公告)日：2012-06-19
申请号：US12889787
申请日：2010-09-24
申请人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , John F. Kaeding , Rajat Sharma , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L31/0236 , C30B25/186 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02647 , H01L21/02658 , H01L29/2003 , H01L29/778 , H01L31/18 , H01L33/0075 , Y02E10/50
摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.
摘要翻译：一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。本发明还公开了一种制造分面表面的方法。一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。分面表面通常是半极性平面。

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