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1. 发明授权

US08686466B2 Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices 有权
标题翻译：用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
公开(公告)号：US08686466B2
公开(公告)日：2014-04-01
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

2. 发明申请

US20110062449A1 TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES 有权
标题翻译：用于生长和制造半透明（GA，AL，IN，B）N薄膜，异构体和器件的技术
公开(公告)号：US20110062449A1
公开(公告)日：2011-03-17
申请号：US12953029
申请日：2010-11-23
申请人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, JR. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

3. 发明授权

US07846757B2 Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权
标题翻译：用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
公开(公告)号：US07846757B2
公开(公告)日：2010-12-07
申请号：US11444946
申请日：2006-06-01
申请人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh Kumar Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

4. 发明授权

US07795146B2 Etching technique for the fabrication of thin (Al, In, Ga)N layers 有权
标题翻译：用于制造薄（Al，In，Ga）N层的蚀刻技术
公开(公告)号：US07795146B2
公开(公告)日：2010-09-14
申请号：US11403288
申请日：2006-04-13
申请人： James S. Speck , Benjamin A. Haskell , P. Morgan Pattison , Troy J. Baker
发明人： James S. Speck , Benjamin A. Haskell , P. Morgan Pattison , Troy J. Baker
IPC分类号： H01L21/461
CPC分类号： H01L21/76254 , H01L21/2654 , H01L21/26546 , H01L21/30612 , H01L33/0079 , H01L33/32
摘要： An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.
摘要翻译：用于制造薄（Al，In，Ga）N层的蚀刻技术。选择合适的模板或衬底并在期望的区域上注入外来离子以产生离子注入材料。然后在植入的模板或衬底上执行器件结构的再生长。模板的顶部生长表面被结合到载体晶片以产生结合的模板/载体晶片结构。像任何残留的材料一样去除衬底以暴露离子注入的材料。然后将接合的模板/载体晶片结构上的离子注入材料暴露于合适的蚀刻剂足够的时间以除去离子注入的材料。

5. 发明申请

US20100320475A1 ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS 审中-公开
标题翻译：蚀刻技术（Al，In，Ga）N层的制备技术
公开(公告)号：US20100320475A1
公开(公告)日：2010-12-23
申请号：US12873947
申请日：2010-09-01
申请人： James S. Speck , Benjamin A. Haskell , P. Morgan Pattison , Troy J. Baker
发明人： James S. Speck , Benjamin A. Haskell , P. Morgan Pattison , Troy J. Baker
IPC分类号： H01L29/20
CPC分类号： H01L21/2654 , H01L21/26546 , H01L21/30612 , H01L21/76254 , H01L33/0079 , H01L33/32
摘要： An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.
摘要翻译：用于制造薄（Al，In，Ga）N层的蚀刻技术。选择合适的模板或衬底并在期望的区域上注入外来离子以产生离子注入材料。然后在植入的模板或衬底上执行器件结构的再生长。模板的顶部生长表面被结合到载体晶片以产生结合的模板/载体晶片结构。像任何残留的材料一样去除衬底以暴露离子注入的材料。然后将接合的模板/载体晶片结构上的离子注入材料暴露于合适的蚀刻剂足够的时间以除去离子注入的材料。

6. 发明授权

US08491165B2 Lighting unit having lighting strips with light emitting elements and a remote luminescent material 有权
标题翻译：照明单元具有带有发光元件和远程发光材料的照明条
公开(公告)号：US08491165B2
公开(公告)日：2013-07-23
申请号：US13029000
申请日：2011-02-16
申请人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
发明人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
IPC分类号： F21V7/00
CPC分类号： F21V13/08 , F21K9/20 , F21V7/00 , F21V7/22 , F21V9/30 , F21V13/02 , F21Y2103/10 , F21Y2115/10 , H05B41/02
摘要： The invention provides systems and methods for providing illumination. A lighting unit may have a support structure, and one or more light emitting elements supported by a circuit board contacting the support structure. A first optical element and a second optical element may be provided. A remote luminescent material may be provided on one or more optical elements. Light emitting elements configured to excite the luminescent material such as highly efficient light emitting diodes may be directed towards the luminescent material. The support structure may be a heat dissipating element, which may conduct heat from a heat source to a surface of the support structure. The heat dissipating element may have a passageway permitting the formation of a convection path to dissipate heat from the support structure. Such lighting units may be used to replace conventional fluorescent light tubes or other lighting devices, or may be provided as standalone lighting units.
摘要翻译：本发明提供了用于提供照明的系统和方法。照明单元可以具有支撑结构，并且一个或多个由电路板支撑的发光元件与支撑结构接触。可以提供第一光学元件和第二光学元件。远程发光材料可以设置在一个或多个光学元件上。配置成激发发光材料（例如高效发光二极管）的发光元件可以被引向发光材料。支撑结构可以是散热元件，其可以将热量从热源传导到支撑结构的表面。散热元件可以具有允许形成对流路径以从支撑结构散发热量的通道。这种照明单元可以用于替代常规的荧光灯管或其他照明装置，或者可以被提供为独立照明装置。

7. 发明申请

US20110199005A1 LIGHTING UNIT HAVING LIGHTING STRIPS WITH LIGHT EMITTING ELEMENTS AND A REMOTE LUMINESCENT MATERIAL 有权
标题翻译：具有发光元件和远距离发光材料的照明灯具的照明单元
公开(公告)号：US20110199005A1
公开(公告)日：2011-08-18
申请号：US13029000
申请日：2011-02-16
申请人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
发明人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
IPC分类号： H05B37/02 , F21V9/16 , F21S4/00
CPC分类号： F21V13/08 , F21K9/20 , F21V7/00 , F21V7/22 , F21V9/30 , F21V13/02 , F21Y2103/10 , F21Y2115/10 , H05B41/02
摘要： The invention provides systems and methods for providing illumination. A lighting unit may have a support structure, and one or more light emitting elements supported by a circuit board contacting the support structure. A first optical element and a second optical element may be provided. A remote luminescent material may be provided on one or more optical elements. Light emitting elements configured to excite the luminescent material such as highly efficient light emitting diodes may be directed towards the luminescent material. The support structure may be a heat dissipating element, which may conduct heat from a heat source to a surface of the support structure. The heat dissipating element may have a passageway permitting the formation of a convection path to dissipate heat from the support structure. Such lighting units may be used to replace conventional fluorescent light tubes or other lighting devices, or may be provided as standalone lighting units.
摘要翻译：本发明提供了用于提供照明的系统和方法。照明单元可以具有支撑结构，并且一个或多个由电路板支撑的发光元件与支撑结构接触。可以提供第一光学元件和第二光学元件。远程发光材料可以设置在一个或多个光学元件上。配置成激发发光材料（例如高效发光二极管）的发光元件可以被引向发光材料。支撑结构可以是散热元件，其可以将热量从热源传导到支撑结构的表面。散热元件可以具有允许形成对流路径以从支撑结构散发热量的通道。这种照明单元可以用于替代常规的荧光灯管或其他照明装置，或者可以被提供为独立照明装置。

8. 发明授权

US08360607B2 Lighting unit with heat-dissipating chimney 有权
标题翻译：具有散热烟囱的照明单元
公开(公告)号：US08360607B2
公开(公告)日：2013-01-29
申请号：US13029032
申请日：2011-02-16
申请人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
发明人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
IPC分类号： F21V29/00
CPC分类号： F21V13/08 , F21K9/20 , F21V7/00 , F21V7/22 , F21V9/30 , F21V13/02 , F21Y2103/10 , F21Y2115/10 , H05B41/02
摘要： The invention provides systems and methods for providing illumination. A lighting unit may have a support structure, and one or more light emitting elements supported by a circuit board contacting the support structure. A first optical element and a second optical element may be provided. A remote luminescent material may be provided on one or more optical elements. Light emitting elements configured to excite the luminescent material such as highly efficient light emitting diodes may be directed towards the luminescent material. The support structure may be a heat dissipating element, which may conduct heat from a heat source to a surface of the support structure. The heat dissipating element may have a passageway permitting the formation of a convection path to dissipate heat from the support structure. Such lighting units may be used to replace conventional fluorescent light tubes or other lighting devices, or may be provided as standalone lighting units.
摘要翻译：本发明提供了用于提供照明的系统和方法。照明单元可以具有支撑结构，并且一个或多个由电路板支撑的发光元件与支撑结构接触。可以提供第一光学元件和第二光学元件。远程发光材料可以设置在一个或多个光学元件上。配置成激发发光材料（例如高效发光二极管）的发光元件可以被引向发光材料。支撑结构可以是散热元件，其可以将热量从热源传导到支撑结构的表面。散热元件可以具有允许形成对流路径以从支撑结构散发热量的通道。这种照明单元可以用于替代常规的荧光灯管或其他照明装置，或者可以被提供为独立照明装置。

9. 发明申请

US20110199769A1 LIGHTING UNIT WITH HEAT-DISSIPATING CHIMNEY 有权
标题翻译：带散热片的灯具
公开(公告)号：US20110199769A1
公开(公告)日：2011-08-18
申请号：US13029032
申请日：2011-02-16
申请人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
发明人： Eric Bretschneider , Zach Berkowitz , Randall Sosnick , Lisa Pattison , P. Morgan Pattison
IPC分类号： F21S4/00
CPC分类号： F21V13/08 , F21K9/20 , F21V7/00 , F21V7/22 , F21V9/30 , F21V13/02 , F21Y2103/10 , F21Y2115/10 , H05B41/02
摘要： The invention provides systems and methods for providing illumination. A lighting unit may have a support structure, and one or more light emitting elements supported by a circuit board contacting the support structure. A first optical element and a second optical element may be provided. A remote luminescent material may be provided on one or more optical elements. Light emitting elements configured to excite the luminescent material such as highly efficient light emitting diodes may be directed towards the luminescent material. The support structure may be a heat dissipating element, which may conduct heat from a heat source to a surface of the support structure. The heat dissipating element may have a passageway permitting the formation of a convection path to dissipate heat from the support structure. Such lighting units may be used to replace conventional fluorescent light tubes or other lighting devices, or may be provided as standalone lighting units.
摘要翻译：本发明提供了用于提供照明的系统和方法。照明单元可以具有支撑结构，并且一个或多个由电路板支撑的发光元件与支撑结构接触。可以提供第一光学元件和第二光学元件。远程发光材料可以设置在一个或多个光学元件上。配置成激发发光材料（例如高效发光二极管）的发光元件可以被引向发光材料。支撑结构可以是散热元件，其可以将热量从热源传导到支撑结构的表面。散热元件可以具有允许形成对流路径以从支撑结构散发热量的通道。这种照明单元可以用于替代常规的荧光灯管或其他照明装置，或者可以被提供为独立照明装置。

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