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    • 6. 发明授权
    • Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same
    • 嘧啶并嘧啶衍生物,使用嘧啶并嘧啶衍生物的有机薄膜晶体管及其制造方法
    • US07632947B2
    • 2009-12-15
    • US11358050
    • 2006-02-22
    • Eun Jeong JeongSang Yoon LeeBang Lin Lee
    • Eun Jeong JeongSang Yoon LeeBang Lin Lee
    • H01L35/24H01L51/00C07D487/04C07F5/04
    • H01L51/0068H01L51/0067H01L51/0071H01L51/0545
    • Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same are provided. Pyrimidopyrimidine derivative structures, along with example syntheses, are provided. The pyrimidopyrimidine derivatives may be pyrimidopyrimidine oligothiophene derivatives in which an oligothiophene having p-type semiconductor characteristics may be bonded to a pyrimidopyrimidine having n-type semiconductor characteristics positioned substantially in the center of the molecules, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. The pyrimidopyrimidine derivatives may be spin-coated at room, or ambient, temperature when applied to the fabrication of an electronic device, for example, organic thin film transistors. Organic thin film transistors using the pyrimidopyrimidine derivatives may provide higher charge carrier mobility and/or lower off-state leakage current.
    • 提供了嘧啶并嘧啶衍生物,使用嘧啶并嘧啶衍生物的有机薄膜晶体管及其制造方法。 提供嘧啶并嘧啶衍生物结构,以及实施例合成。 嘧啶并嘧啶衍生物可以是嘧啶并嘧啶低聚噻吩衍生物,其中具有p型半导体特性的低聚噻吩可以键合到具有基本上位于分子中心的n型半导体特性的嘧啶并嘧啶,从而同时显示p型和n型 半导体特性。 当应用于电子器件(例如有机薄膜晶体管)的制造时,嘧啶并嘧啶衍生物可以在室温或环境温度下旋涂。 使用嘧啶并嘧啶衍生物的有机薄膜晶体管可提供较高的载流子迁移率和/或较低截止状态的漏电流。