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1. 发明授权

US08900799B2 Thin film patterning method and method of manufacturing semiconductor device using the thin film patterning method 有权
标题翻译：薄膜构图方法及使用薄膜构图方法制造半导体器件的方法
公开(公告)号：US08900799B2
公开(公告)日：2014-12-02
申请号：US13588689
申请日：2012-08-17
申请人： Jong-baek Seon , Myung-kwan Ryu , Sang-yoon Lee
发明人： Jong-baek Seon , Myung-kwan Ryu , Sang-yoon Lee
IPC分类号： G03F7/20 , H01L21/46
CPC分类号： G03F7/2002 , G03F7/0043 , G03F7/40 , H01L21/02554 , H01L21/02581 , H01L21/02628 , H01L21/46 , H01L29/7869
摘要： A thin film patterning method may include forming a thin film by coating a precursor solution containing a precursor of metal oxide onto a substrate, soft baking the thin film, exposing the thin film to light by using a photomask, developing the thin film, and hard baking the developed thin film. The precursor may include metal acetate, for example, a zinc acetate-based material, and the metal oxide thin film may include zinc oxide (ZnO).
摘要翻译：薄膜图案化方法可以包括通过将含有金属氧化物前体的前体溶液涂布在基材上来形成薄膜，软化该薄膜，通过使用光掩模将该薄膜曝光，使薄膜显影，并使硬烘焙发达的薄膜。前体可以包括金属乙酸盐，例如乙酸锌基材料，并且金属氧化物薄膜可以包括氧化锌（ZnO）。

2. 发明授权

US08847206B2 Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure 有权
标题翻译：表面改性剂，层压结构体及包含该表面改性剂的晶体管及其制造方法
公开(公告)号：US08847206B2
公开(公告)日：2014-09-30
申请号：US12656685
申请日：2010-02-12
申请人： Jeong-il Park , Byung-wook Yoo , Do-hwan Kim , Sang-yoon Lee , Bang-lin Lee , Eun-jeong Jeong
发明人： Jeong-il Park , Byung-wook Yoo , Do-hwan Kim , Sang-yoon Lee , Bang-lin Lee , Eun-jeong Jeong
IPC分类号： H01L29/72
CPC分类号： H01L51/102 , B82Y30/00 , H01L51/0023 , H01L51/0512 , Y10T428/24802 , Y10T428/24917 , Y10T428/31504 , Y10T428/31678
摘要： Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.
摘要翻译：公开了一种表面改性剂，其包括在一个末端具有乙炔基的化合物，使用表面改性剂制造的层压结构，该层压结构体的制造方法和包含该层压结构的晶体管。

3. 发明授权

US08779428B2 Transistors and electronic devices including the same 有权
标题翻译：晶体管和电子设备包括相同的
公开(公告)号：US08779428B2
公开(公告)日：2014-07-15
申请号：US13167299
申请日：2011-06-23
申请人： Eok-su Kim , Sang-yoon Lee , Myung-kwan Ryu
发明人： Eok-su Kim , Sang-yoon Lee , Myung-kwan Ryu
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/78648 , H01L29/78651 , H01L29/78681 , H01L29/7869
摘要： A transistor includes a first active layer having a first channel region and a second active layer having a second channel region. A first gate of the transistor is configured to control electrical characteristics of at least the first active layer and a second gate is configured to control electrical characteristics of at least the second active layer. A source electrode contacts the first and second active layers. A drain electrode also contacts the first and second active layers.
摘要翻译：晶体管包括具有第一沟道区的第一有源层和具有第二沟道区的第二有源层。晶体管的第一栅极被配置为控制至少第一有源层的电特性，并且第二栅极被配置为控制至少第二有源层的电特性。源电极接触第一和第二有源层。漏电极也接触第一和第二有源层。

4. 发明授权

US08679984B2 Method of manufacturing electric device, array of electric devices, and manufacturing method therefor 有权
标题翻译：电气装置的制造方法，电气装置的阵列及其制造方法
公开(公告)号：US08679984B2
公开(公告)日：2014-03-25
申请号：US13173986
申请日：2011-06-30
申请人： Jong Won Chung , Christopher J. Bettinger , Zhenan Bao , Do Hwan Kim , Bang Lin Lee , Jeong Il Park , Yong Wan Jin , Sang Yoon Lee
发明人： Jong Won Chung , Christopher J. Bettinger , Zhenan Bao , Do Hwan Kim , Bang Lin Lee , Jeong Il Park , Yong Wan Jin , Sang Yoon Lee
IPC分类号： H01L21/461
CPC分类号： H01L51/0558 , H01L51/0003 , H01L51/0026 , H01L51/0541 , H01L51/0545
摘要： An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.
摘要翻译：示例性实施例涉及一种制造电气设备阵列的方法，其包括将包括微通道结构的平台附接到基板。该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱，其中第一和第二溶液包括不同的溶剂组成比，并且液柱各自包括不同的溶剂组成比。该方法还包括将基板分离，从液膜柱移除溶剂以形成薄膜柱，以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。从薄膜柱中除去溶剂，并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。

5. 发明授权

US08586979B2 Oxide semiconductor transistor and method of manufacturing the same 有权
公开(公告)号：US08586979B2
公开(公告)日：2013-11-19
申请号：US12320701
申请日：2009-02-02
申请人： Kyoung-Seok Son , Tae-Sang Kim , Jang-Yeon Kwon , Ji-Sim Jung , Sang-Yoon Lee , Myung-Kwan Ryu , Kyung-Bae Park , Byung-Wook Yoo
发明人： Kyoung-Seok Son , Tae-Sang Kim , Jang-Yeon Kwon , Ji-Sim Jung , Sang-Yoon Lee , Myung-Kwan Ryu , Kyung-Bae Park , Byung-Wook Yoo
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/4908 , H01L29/78648
摘要： An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

6. 发明申请

US20130234116A1 ORGANIC MICROELECTRONIC DEVICE AND FABRICATION METHOD THEREFOR 有权
标题翻译：有机微电子器件及其制造方法
公开(公告)号：US20130234116A1
公开(公告)日：2013-09-12
申请号：US13413109
申请日：2012-03-06
申请人： Sang Yoon Lee , Shinuk Cho , Ji Youl Lee , Alan J. Heeger
发明人： Sang Yoon Lee , Shinuk Cho , Ji Youl Lee , Alan J. Heeger
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/4253 , B82Y10/00 , H01L51/0036 , H01L51/0047 , H01L51/0554 , Y02E10/549
摘要： An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.
摘要翻译：有机电子器件包括有源区极性定义层和形成在有源区极性定义层上的体异质结有源层。本体异质结有源层包括上部区域和下部区域，其具有各自具有不同极性的多数载流子。

7. 发明授权

US08529802B2 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition 有权
标题翻译：溶液组成和薄膜形成方法以及使用该溶液组合物制造薄膜晶体管的方法
公开(公告)号：US08529802B2
公开(公告)日：2013-09-10
申请号：US12656682
申请日：2010-02-12
申请人： Jong-Baek Seon , Sang-Yoon Lee , Jeong-il Park , Myung-Kwan Ryu , Kyung-Bae Park
发明人： Jong-Baek Seon , Sang-Yoon Lee , Jeong-il Park , Myung-Kwan Ryu , Kyung-Bae Park
IPC分类号： H01B1/02 , H01B1/06 , H01B1/12 , H01L21/44
CPC分类号： H01L21/02565 , H01L21/02554 , H01L21/02628 , H01L29/7869
摘要： Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
摘要翻译：公开了一种用于形成包含含锌化合物，含铟化合物和包含至少一种选自铪（Hf），镁（Mg），钽（Ta），铈（Ce），镧（La），硅（Si），锗（Ge），钒（V），铌（Nb）和钇（Y）。还公开了通过使用溶液组合物形成薄膜的方法，以及制造包括该薄膜的薄膜晶体管的制造方法。

8. 发明授权

US08395146B2 Composition and organic insulating film prepared using the same 有权
标题翻译：组合物和使用其制备的有机绝缘膜
公开(公告)号：US08395146B2
公开(公告)日：2013-03-12
申请号：US13067002
申请日：2011-05-02
申请人： Jung Seok Hahn , Eun Kyung Lee , Sang Yoon Lee , Eun Jeong Jeong , Joo Young Kim
发明人： Jung Seok Hahn , Eun Kyung Lee , Sang Yoon Lee , Eun Jeong Jeong , Joo Young Kim
IPC分类号： H01L35/24
CPC分类号： H01L51/052
摘要： Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.
摘要翻译：公开了组合物，包含该有机绝缘膜的有机绝缘膜，包括有机绝缘膜的有机薄膜晶体管，包括有机薄膜晶体管的电子器件及其制造方法。在该组合物中，包括具有羧基的有机聚合物材料和具有给电子基团的有机硅烷材料，从而实现可以进一步稳定未反应的交联材料的结构。因此，滞后现象可能会降低，并且可能增加透明度，从而可以确保暴露在空气中时的稳定性。因此，有机薄膜晶体管的寿命可以延长。

9. 发明授权

US08373158B2 Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure 有权
公开(公告)号：US08373158B2
公开(公告)日：2013-02-12
申请号：US12656685
申请日：2010-02-12
申请人： Jeong-il Park , Byung-wook Yoo , Do-hwan Kim , Sang-yoon Lee , Bang-lin Lee , Eun-jeong Jeong
发明人： Jeong-il Park , Byung-wook Yoo , Do-hwan Kim , Sang-yoon Lee , Bang-lin Lee , Eun-jeong Jeong
IPC分类号： H01L29/72
摘要： Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

10. 发明授权

US08323875B2 Methods for forming banks and organic thin film transistors comprising such banks 有权
标题翻译：用于形成包括这种堤的堤和有机薄膜晶体管的方法
公开(公告)号：US08323875B2
公开(公告)日：2012-12-04
申请号：US11633006
申请日：2006-12-04
申请人： Bon Won Koo , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
发明人： Bon Won Koo , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
IPC分类号： G30F7/00
CPC分类号： H01L51/0512 , H01L27/283 , H01L51/0005 , H01L51/0558
摘要： Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
摘要翻译：公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

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