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1. 发明申请

US20060006379A1 Organic semiconductor copolymers containing oligothiophene and n-type heteroaromatic units 有权
标题翻译：含有低聚噻吩和n型杂芳族单元的有机半导体共聚物
公开(公告)号：US20060006379A1
公开(公告)日：2006-01-12
申请号：US11073691
申请日：2005-03-08
申请人： Bang Lee , Kook Han , Jung Shin , Sang Lee , Eun Jeong
发明人： Bang Lee , Kook Han , Jung Shin , Sang Lee , Eun Jeong
IPC分类号： H01L29/08 , C08G75/00
CPC分类号： H01L51/0043 , H01L51/0036 , H01L51/0512 , Y10T428/31533
摘要： An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.
摘要翻译：示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。电子接受单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受性杂芳族结构或包含C 2〜2-30杂芳族结构的噻吩 - 亚芳基。还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。

2. 发明申请

US20060081839A1 Oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
公开(公告)号：US20060081839A1
公开(公告)日：2006-04-20
申请号：US11084794
申请日：2005-03-21
申请人： Eun Jeong , Chang Kim , Bang Lee , Sang Lee , Kook Han
发明人： Eun Jeong , Chang Kim , Bang Lee , Sang Lee , Kook Han
IPC分类号： H01L29/08 , C08G75/00
CPC分类号： H01L51/0068 , C08G61/12 , C08G61/126 , H01L51/0036 , H01L51/0072 , H01L51/0545
摘要： An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative.

3. 发明申请

US20060292758A1 Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same 有权
公开(公告)号：US20060292758A1
公开(公告)日：2006-12-28
申请号：US11358050
申请日：2006-02-22
申请人： Eun Jeong , Sang Lee , Bang Lee
发明人： Eun Jeong , Sang Lee , Bang Lee
IPC分类号： C06B45/00 , H01L21/84
CPC分类号： H01L51/0068 , H01L51/0067 , H01L51/0071 , H01L51/0545
摘要： Pyrimidopyrimidine derivatives, organic thin film transistors using pyrimidopyrimidine derivatives and method for fabricating the same are provided. Pyrimidopyrimidine derivative structures, along with example syntheses, are provided. The pyrimidopyrimidine derivatives may be pyrimidopyrimidine oligothiophene derivatives in which an oligothiophene having p-type semiconductor characteristics may be bonded to a pyrimidopyrimidine having n-type semiconductor characteristics positioned substantially in the center of the molecules, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. The pyrimidopyrimidine derivatives may be spin-coated at room, or ambient, temperature when applied to the fabrication of an electronic device, for example, organic thin film transistors. Organic thin film transistors using the pyrimidopyrimidine derivatives may provide higher charge carrier mobility and/or lower off-state leakage current.

4. 发明申请

US20070129473A1 Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same 有权
标题翻译：有机绝缘体组合物，具有该有机绝缘体组合物的有机绝缘膜，具有该有机绝缘体组合物的有机薄膜晶体管和具有该有机绝缘体组合物的电子器件及其形成方法
公开(公告)号：US20070129473A1
公开(公告)日：2007-06-07
申请号：US11481843
申请日：2006-07-07
申请人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
发明人： Jung Shin , Eun Lee , Eun Jeong , Joo Kim , Hyun Moon , Sang Lee
IPC分类号： C04B41/50 , B60C1/00
CPC分类号： H01L51/052 , H01L21/02126 , H01L21/02175 , H01L21/3122 , H01L51/0036 , H01L51/0055 , Y10T428/31663
摘要： Example embodiments of the present invention relate to an organic insulator composition, an organic insulating film having the organic insulator composition, an organic thin film transistor having the organic insulating film, an electronic device having the organic thin film transistor and methods of forming the same. Other example embodiments of the present invention relate to an organic insulator composition including a fluorinated silane compound that may be used to improve the charge carrier mobility and hysteresis of an organic thin film transistor. An organic insulator composition including a fluorinated silane compound and an organic thin film transistor using the same is provided. The hysteresis and physical properties, e.g., threshold voltage and/or charge carrier mobility, of the organic thin film transistor may be improved by the use of the organic insulator composition. The organic thin film transistor may be effectively used in the manufacture of a variety of electronic devices including liquid crystal displays (LCDs) and/or photovoltaic devices.
摘要翻译：本发明的实施例涉及有机绝缘体组合物，具有有机绝缘体组合物的有机绝缘膜，具有有机绝缘膜的有机薄膜晶体管，具有有机薄膜晶体管的电子器件及其形成方法。本发明的其它示例性实施方案涉及包含可用于改善有机薄膜晶体管的载流子迁移率和滞后的氟化硅烷化合物的有机绝缘体组合物。提供了包含氟化硅烷化合物和使用其的有机薄膜晶体管的有机绝缘体组合物。可以通过使用有机绝缘体组合物来改善有机薄膜晶体管的滞后和物理性质，例如阈值电压和/或电荷载流子迁移率。有机薄膜晶体管可以有效地用于制造包括液晶显示器（LCD）和/或光伏器件的各种电子器件。

5. 发明申请

US20060177961A1 Method for fabricating organic thin film transistor by application of electric field 有权
标题翻译：通过施加电场制造有机薄膜晶体管的方法
公开(公告)号：US20060177961A1
公开(公告)日：2006-08-10
申请号：US11196382
申请日：2005-08-04
申请人： Chang Kim , Eun Jeong , Sang Lee , Bon Koo , Eun Lee
发明人： Chang Kim , Eun Jeong , Sang Lee , Bon Koo , Eun Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0002 , H01L51/0036 , H01L51/0516 , H01L51/0545
摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.
摘要翻译：一种通过施加电场来制造有机薄膜晶体管的方法。该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压和漏电极，并向栅电极施加交流（AC）电压。通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。因此，通过该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高I / O比较的高电荷载流子迁移率。

6. 发明申请

US20060289858A1 Organic thin film transistor(s) and method(s) for fabricating the same 有权
公开(公告)号：US20060289858A1
公开(公告)日：2006-12-28
申请号：US11297396
申请日：2005-12-09
申请人： Hyun Park , Sang Lee , Eun Jeong , Kook Han , Jung Hahn , Tae Lee
发明人： Hyun Park , Sang Lee , Eun Jeong , Kook Han , Jung Hahn , Tae Lee
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/105 , H01L51/0055 , H01L51/052
摘要： Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.

7. 发明申请

US20060128083A1 Method for fabricating organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20060128083A1
公开(公告)日：2006-06-15
申请号：US11123120
申请日：2005-05-06
申请人： Hyun Park , Bon Koo , Joo Kim , Jung Shin , Eun Jeong , Sang Lee
发明人： Hyun Park , Bon Koo , Joo Kim , Jung Shin , Eun Jeong , Sang Lee
IPC分类号： H01L21/8234
CPC分类号： H01L51/0529 , H01L51/0036 , H01L51/0052 , H01L51/0078 , H01L51/052 , H01L51/105
摘要： Disclosed herein is a method for fabricating an organic thin film transistor comprising a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein the surface of the gate insulating film on which source/drain electrodes are formed is impregnated with an inorganic or organic acid, followed by annealing. According to the method, the surface of a gate insulating film damaged by a photoresist process can be effectively recovered. In addition, organic thin film transistors having high charge carrier mobility and high on/off current ratio can be fabricated.
摘要翻译：本文公开了一种制造有机薄膜晶体管的方法，其包括在基板上依次形成的栅电极，栅极绝缘膜，源极/漏极和有机半导体层，其中栅极绝缘膜的表面上的源极/ 形成漏电极用无机酸或有机酸浸渍，然后进行退火。根据该方法，可以有效地回收由光刻胶工艺损坏的栅极绝缘膜的表面。此外，可以制造具有高电荷载流子迁移率和高导通/截止电流比的有机薄膜晶体管。

8. 发明申请

US20060151781A1 Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same 有权
标题翻译：包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法
公开(公告)号：US20060151781A1
公开(公告)日：2006-07-13
申请号：US11296704
申请日：2005-12-08
申请人： Joo Kim , Eun Lee , Bang Lee , Bon Koo , Hyun Park , Sang Lee
发明人： Joo Kim , Eun Lee , Bang Lee , Bon Koo , Hyun Park , Sang Lee
IPC分类号： H01L29/08
CPC分类号： H01L21/0212 , H01L21/02282 , H01L21/3127 , H01L21/31691 , H01L51/0036 , H01L51/052 , H01L51/0529 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.
摘要翻译：包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。有机薄膜晶体管可以包括形成在基板上的栅电极，栅极绝缘层，有机半导体层，源电极和漏电极，其中可以在界面处形成（或沉积）氟基聚合物薄膜在栅绝缘层和有机半导体层之间。有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比（I />）。此外，可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层，因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

9. 发明申请

US20060006380A1 Composition for forming organic insulating film and method for forming pattern of organic insulating film using the same 失效
标题翻译：用于形成有机绝缘膜的组合物和使用其形成有机绝缘膜的图案的方法
公开(公告)号：US20060006380A1
公开(公告)日：2006-01-12
申请号：US11156489
申请日：2005-06-21
申请人： Jung Shin , Tae Lee , Bon Koo , Bang Lee , Sang Lee
发明人： Jung Shin , Tae Lee , Bon Koo , Bang Lee , Sang Lee
IPC分类号： H01L29/08
CPC分类号： H01L21/31133 , H01L21/0274 , H01L51/052
摘要： A photo-patternable composition for forming an organic insulating film which includes (i) a functional group-containing monomer, (ii) an initiator generating an acid or a radical upon light irradiation, and (iii) an organic or inorganic polymer. Further disclosed is a method for forming a pattern of an organic insulating film using the composition. Since an organic insulating film can be simply patterned without involving any photoresist process, the overall procedure is simplified and eventually an organic thin film transistor with high charge carrier mobility can be fabricated by all wet processes.
摘要翻译：一种用于形成有机绝缘膜的光可图案组合物，其包含（i）含官能团的单体，（ii）在光照射时产生酸或自由基的引发剂，和（iii）有机或无机聚合物。还公开了使用该组合物形成有机绝缘膜的图案的方法。由于有机绝缘膜可以简单地构图而不涉及任何光致抗蚀剂工艺，所以整个工艺被简化，并且最终可以通过所有湿法制造具有高电荷载流子迁移率的有机薄膜晶体管。

10. 发明申请

US20070046856A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20070046856A1
公开(公告)日：2007-03-01
申请号：US11552289
申请日：2006-10-24
申请人： Sang Lee , Jung Kang , Sang Lee
发明人： Sang Lee , Jung Kang , Sang Lee
IPC分类号： G02F1/1335
CPC分类号： G02B6/0038 , G02B6/0053 , G02F2001/133607
摘要： An LCD device has scratch-resistant property without using a protection sheet and can provide enhanced brightness. The LCD device includes a light path regulating member. The member includes a first prism sheet having first prisms of which apex has a round shape. The first prism sheet concentrates light supplied from a lamp to output the concentrated light. An anti-glare polarizing plate uniformly polarizes polarized planes of the concentrated light and provides the polarized light to the lower substrate. The anti-glare polarizing plate is arranged below the lower substrate of an LCD panel, and an uppermost prism sheet of optical sheets is non-matte-treated and has round-treated apexes. In spite of the absence of the protection sheet, the scratch-resistant property of the uppermost prism sheet and the brightness of the LCD panel may be enhanced.
摘要翻译：液晶显示装置具有耐刮擦性能，不使用保护片，可提供更高的亮度。 LCD装置包括光路调节部件。该构件包括具有顶点具有圆形形状的第一棱镜的第一棱镜片。第一棱镜片集中从灯提供的光以输出集中的光。抗眩光偏光板使聚光的偏振面均匀地偏振，并向下基板提供偏振光。防眩光偏振板配置在LCD面板的下基板的下方，最上方的光学片棱镜片未经磨光处理，具有圆形处理的顶点。尽管不存在保护片，但是可以提高最上面的棱镜片的耐擦伤性和LCD面板的亮度。

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