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1. 发明申请

US20100073271A1 BALANCE BOARD AND LIQUID CRYSTAL DISPLAY HAVING THE SAME 失效
标题翻译：平衡板和液晶显示器
公开(公告)号：US20100073271A1
公开(公告)日：2010-03-25
申请号：US12498190
申请日：2009-07-06
申请人： Eui-Dong HWANG , Yun-Gun LEE , Dal-Jung KWON , Myoung-Soo KIM , Byung-Kyou MIN
发明人： Eui-Dong HWANG , Yun-Gun LEE , Dal-Jung KWON , Myoung-Soo KIM , Byung-Kyou MIN
IPC分类号： G09G3/36
CPC分类号： G02F1/133611 , G02F2001/133612
摘要： A balance board includes; a substrate, a first wire disposed on the substrate, a second wire disposed on the substrate and spaced apart from the first wire, a plurality of first balance coils connected to the first wire and which uniformly distribute a first power supply voltage, a plurality of second balance coils connected to the second wire and which uniformly distribute a second power supply voltage, and a conductive pattern disposed on the substrate and spaced apart from the first and second wires, wherein the first and second wires are disposed substantially in parallel with each other, the second wire being divided into a plurality of parts with respect to an area where the first wire and the second wire cross over one another and the plurality of parts of the second wire are connected by a plurality of jumper connectors overlapping the first wire.
摘要翻译：平衡板包括; 基板，设置在基板上的第一布线，设置在基板上并与第一布线隔开的第二布线，与第一布线连接并且均匀分布第一电源电压的多个第一平衡线圈，多个连接到第二线并且均匀分布第二电源电压的第二平衡线圈和设置在基板上并与第一和第二线分开的导电图案，其中第一和第二线基本上彼此平行地设置相对于第一线和第二线彼此交叉的区域，第二线被分成多个部分，并且第二线的多个部分通过与第一线重叠的多个跳线连接器连接。

2. 发明申请

US20090263948A1 METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：金属氧化物半导体场效应晶体管（MOSFET）及其制造方法
公开(公告)号：US20090263948A1
公开(公告)日：2009-10-22
申请号：US12498000
申请日：2009-07-06
申请人： Myoung-Soo KIM
发明人： Myoung-Soo KIM
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/823462 , H01L21/823456
摘要： A Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is provided. The MOSFET includes a semiconductor substrate, a device isolating region disposed on a predetermined portion of the semiconductor substrate to define an active region, a source region and a drain region spaced apart from each other about a channel region within the active region, and a gate electrode formed on the active region between the source region and the drain region. Furthermore, the MOSFET also includes a gate insulating layer formed between the active region and the gate electrode. The gate insulating layer includes a central gate insulating layer disposed under central portion of the gate electrode, an edge gate insulating layer disposed under an edge portion of the gate electrode to have a bottom surface level with a bottom of the central gate insulating layer and an upper surface protruding to be higher than an upper surface of the central gate insulating layer.
摘要翻译：提供金属氧化物半导体场效应晶体管（MOSFET）。 MOSFET包括半导体衬底，设置在半导体衬底的预定部分上以限定有源区的器件隔离区，围绕有源区内的沟道区彼此隔开的源区和漏区，以及栅极在源极区域和漏极区域之间的有源区域上形成电极。此外，MOSFET还包括在有源区和栅电极之间形成的栅极绝缘层。所述栅极绝缘层包括设置在所述栅极电极的中心部分的中心栅极绝缘层，设置在所述栅极电极的边缘部分下方的边缘栅极绝缘层，以具有与所述中心栅极绝缘层的底部相对的底面电平，上表面突出高于中心栅极绝缘层的上表面。

3. 发明申请

US20090269898A1 METAL OXIDE SEMICONDUCTOR (MOS) FIELD EFFECT TRANSISTOR HAVING TRENCH ISOLATION REGION AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有固化隔离区的金属氧化物半导体（MOS）场效应晶体管及其制造方法
公开(公告)号：US20090269898A1
公开(公告)日：2009-10-29
申请号：US12498652
申请日：2009-07-07
申请人： Myoung-Soo KIM
发明人： Myoung-Soo KIM
IPC分类号： H01L21/336
CPC分类号： H01L21/823481 , H01L29/78
摘要： A leakage current occurring on a boundary of a trench isolation region and an active region can be prevented in a Metal Oxide Semiconductor (MOS) Field Effect transistor, and a fabricating method thereof is provided. The transistor includes the trench isolation region disposed in a predetermined portion of a semiconductor substrate to define the active region. A source region and a drain region are spaced apart from each other within the active region with a channel region disposed between the source region and the drain region. A gate electrode crosses over the channel region between the source region and the drain region, and a gate insulating layer is disposed between the gate electrode and the channel region. An edge insulating layer thicker than the gate insulating layer is disposed on a lower surface of the gate electrode around the boundary of the trench isolation region and the active region.
摘要翻译：在金属氧化物半导体（MOS）场效应晶体管中，可以防止在沟槽隔离区域和有源区域的边界上产生的漏电流，并提供其制造方法。晶体管包括设置在半导体衬底的预定部分中以限定有源区的沟槽隔离区。源极区域和漏极区域在有源区域内彼此间隔开，沟道区域设置在源极区域和漏极区域之间。栅电极跨越源极区域和漏极区域之间的沟道区域，栅极绝缘层设置在栅电极和沟道区域之间。在沟槽隔离区域和有源区域的边界周围的栅电极的下表面上设置比栅绝缘层厚的边缘绝缘层。

4. 发明申请

US20090015990A1 DRAW IN-OUT APPARATUS FOR AIR CIRCUIT BREAKER 审中-公开
标题翻译：用于空气断路器的抽出式输入装置
公开(公告)号：US20090015990A1
公开(公告)日：2009-01-15
申请号：US12165789
申请日：2008-07-01
申请人： Hyun-Jae KIM , Ki-Chul NA , Myoung-Soo KIM , Jae-Goo LYU
发明人： Hyun-Jae KIM , Ki-Chul NA , Myoung-Soo KIM , Jae-Goo LYU
IPC分类号： H02B11/127
CPC分类号： H02B11/127
摘要： Disclosed is a draw in-out apparatus that is suitable for an air circuit breaker having large capacity and size, the apparatus comprising: a movable plate meshed with the thread portion of a spindle so as to be movable back and forth; rack gear installed on the movable plate so as to be movable back and forth along with the movable plate moving back and forth; pinion gear installed to be meshed with the rack gear and rotatable according to the rack gear moving back and forth; a cam rotatable by a rotational driving force transferred from the pinion gear by being provided with a teeth portion meshed with the pinion gear and having a radius larger than those of the pinion gear so as to amplify a torque transferred from the pinion gear and provided with a cam slot portion for enduring a load of the main body and a reaction force generated when the main body and the cradle are electrically connected to each other while the main body is moved to a connected position; a pivot disposed on the cradle at a position adjacent to the middle of a height between electric terminals of the cradle so as for the cam to effectively endure the load of the main body and the reaction force generated when the main body and the cradle are electrically connected to each other; and a driving protruding portion extended from the main body with moving together with the main body and connected to the cam thus to transfer a driving force from the cam to the main body.
摘要翻译：本发明公开了一种适合于具有大容量和大小的空气断路器的抽出装置，该装置包括：与主轴的螺纹部分啮合的活动板，可前后移动; 齿条齿轮安装在可动板上，以便可动板前后移动; 小齿轮安装成与齿条啮合并且可根据齿条来回移动; 通过设置有与所述小齿轮啮合的齿部分并且具有比所述小齿轮大的半径的半径的从所述小齿轮传递的旋转驱动力可旋转的凸轮，以便放大从所述小齿轮传递的扭矩并设置有用于使主体的载荷持续的凸轮槽部和当主体移动到连接位置时主体和托架彼此电连接时产生的反作用力; 在支架上设置在与支架的电气端子之间的高度中间相邻的位置处的枢轴，以便凸轮有效地承受主体的负载和当主体和托架电气时产生的反作用力相互连接; 以及从主体延伸的与主体一起移动并与凸轮连接的驱动突出部，从而将驱动力从凸轮传递到主体。

5. 发明申请

US20090014766A1 NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090014766A1
公开(公告)日：2009-01-15
申请号：US12136580
申请日：2008-06-10
申请人： Myoung-Soo KIM
发明人： Myoung-Soo KIM
IPC分类号： H01L29/94
CPC分类号： H01L27/11206 , H01L27/112 , H01L29/66825 , H01L29/7881
摘要： In one embodiment, a non-volatile memory device includes an isolation film defining an active region in a semiconductor substrate; a tunnel insulating film located on the active region; a control gate located on the isolation film; an inter-gate dielectric film parallel to the control gate and located between the control gate and the isolation film; an electrode overlapped by the control gate and the inter-gate dielectric film, wherein the electrode extends over the tunnel insulating film on the active region to form a floating gate; and a source region and a drain region formed in the active region on both sides of the floating gate.
摘要翻译：在一个实施例中，非易失性存储器件包括限定半导体衬底中的有源区的隔离膜; 位于有源区上的隧道绝缘膜; 位于隔离膜上的控制门; 栅极间电介质膜平行于控制栅并位于控制栅极和隔离膜之间; 由控制栅极和栅极间电介质膜重叠的电极，其中电极在有源区上的隧道绝缘膜上延伸以形成浮栅; 以及形成在浮置栅极两侧的有源区域中的源极区域和漏极区域。

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