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    • 5. 发明授权
    • Analysis of copper ion and complexing agent in copper plating baths
    • 铜电镀液中铜离子和络合剂的分析
    • US08118988B2
    • 2012-02-21
    • US12012197
    • 2008-01-31
    • Eugene ShalytVictor OsoskovMichael PavlovPeter Bratin
    • Eugene ShalytVictor OsoskovMichael PavlovPeter Bratin
    • G01N31/16C25D21/16
    • G01N31/164
    • A simple titration method involving a single copper ion titrant detected by a copper ion specific electrode provides the concentrations of both copper ions and bath complexing agent (ethylene diamine, for example) in alkaline copper electroplating baths of the type used to deposit or thicken copper seed layers on silicon wafers. Standard addition of an excess of a strong complexing agent (EDTA, for example) and back-titration with the copper ion titrant yields the bath copper ion concentration, and continued titration to a second endpoint, preferably after addition of hydroxide to adjust the pH of the analysis solution, yields the total concentration of bath complexing agent. Based on these analyzes, the concentration of free bath complexing agent may be calculated. The method also provides direct determination of the free bath complexing agent concentration via standard addition of excess bath complexing agent to a sample of the plating bath and titration with the copper ion titrant.
    • 通过铜离子特定电极检测到的单一铜离子滴定剂的简单滴定法,可提供用于沉积或增厚铜种子的碱性铜电镀浴中铜离子和浴络合剂(例如乙二胺)的浓度 硅晶片上的层。 标准加入过量的强络合剂(例如EDTA)和用铜离子滴定剂的反滴定产生浴铜离子浓度,并持续滴定至第二终点,优选加入氢氧化物以调节pH 分析溶液,产生浴络合剂的总浓度。 基于这些分析,可以计算游离浴络合剂的浓度。 该方法还通过向镀液样品中标准加入过量浴络合剂并用铜离子滴定剂滴定来直接测定游离液络合剂浓度。