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1. 发明授权

US06734258B2 Protective coating composition for dual damascene process 有权
标题翻译：双镶嵌工艺的保护涂料组合物
公开(公告)号：US06734258B2
公开(公告)日：2004-05-11
申请号：US10011277
申请日：2001-12-11
申请人： Etsuko Iguchi , Jun Koshiyama , Kazumasa Wakiya
发明人： Etsuko Iguchi , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： C08F830
CPC分类号： C08L81/06
摘要： The invention discloses a protective coating solution suitable for forming a resinous protective coating layer on a patterned resist layer in the manufacture of semiconductor devices having, in particular, crowdedly hole-patterned areas and areas of an isolated hole pattern. The essential ingredients of the solution are (A) a resinous compound such as an acrylic resin and (B) a crosslinking compound such as a triazine compound which are combined in such a proportion of 2:8 to 4:6 by weight that the overall weight-average molecular weight of the components (A) and (B) is in the range from 1300 to 4500. This inventive coating solution is advantageous in respect of evenness in the thickness of the coating layer even on a patterned resist layer having a crowdedly hole-patterned area and an isolatedly hole-patterned area and absence of unfilled voids within the hole patterns.
摘要翻译：本发明公开了一种适用于在图案化抗蚀剂层上形成树脂保护涂层的保护涂层溶液，该半导体器件具有特别是拥挤的孔图形区域和隔离孔图案的区域。溶液的主要成分是（A）树脂化合物如丙烯酸树脂和（B）交联化合物如三嗪化合物，其按重量比为2:8至4:6的比例组合，总体上组分（A）和（B）的重均分子量在1300至4500的范围内。本发明的涂布溶液在涂层厚度方面的均匀性方面是有利的，即使是在拥挤的图案化抗蚀剂层上孔图案区域和隔离孔图案区域，并且在孔图案内没有未填充的空隙。

2. 发明授权

US06689535B2 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern 有权
标题翻译：抗反射涂料组合物，使用其的多层光刻胶材料，以及形成图案的方法
公开(公告)号：US06689535B2
公开(公告)日：2004-02-10
申请号：US09986673
申请日：2001-11-09
申请人： Etsuko Iguchi , Takeshi Tanaka , Kazumasa Wakiya
发明人： Etsuko Iguchi , Takeshi Tanaka , Kazumasa Wakiya
IPC分类号： G03F7003
CPC分类号： G03F7/091
摘要： Disclosed is an anti-reflective coating composition for forming an anti-reflective coating as an undercoating layer is provided, comprising a crosslinking agent, which is at least one compound selected from nitrogen-containing compounds having an amino group(s) and/or an imino group(s) at least two hydrogen atoms of which are substituted by a hydroxyalkyl group(s) and/or an alkoxyalkyl group(s), and an acidic compound, wherein the crosslinking agent is such that the proportion of its low-molecular-weight component not larger than a trimer is adjusted to be 15 wt % or less; a multilayer photoresist material using the composition; and a method for forming a pattern. According to the present invention, even in the formation of a hyperfine pattern, it is possible to provide a photoresist pattern having a rectangular cross-sectional profile in relation to the substrate without causing any undesirable phenomena, such as footing, undercutting, etc. at is bottom.
摘要翻译：公开了一种抗反射涂层组合物，其用于形成作为底涂层的抗反射涂层，其包含交联剂，其为至少一种选自具有氨基的含氮化合物和/或其中至少两个氢原子被羟基烷基和/或烷氧基烷基取代的亚氨基，和酸性化合物，其中交联剂使得其低分子量不大于三聚体的重量成分调整为15重量％以下; 使用该组合物的多层光致抗蚀剂材料; 以及形成图案的方法。根据本发明，即使形成超精细图案，也可以提供相对于基板具有矩形截面轮廓的光致抗蚀剂图案，而不会引起任何不期望的现象，例如基底，底切等是底部

3. 发明授权

US06599682B2 Method for forming a finely patterned photoresist layer 失效
标题翻译：形成精细图案化光刻胶层的方法
公开(公告)号：US06599682B2
公开(公告)日：2003-07-29
申请号：US09839200
申请日：2001-04-23
申请人： Etsuko Iguchi , Kazumasa Wakiya
发明人： Etsuko Iguchi , Kazumasa Wakiya
IPC分类号： G03F700
CPC分类号： G03F7/091 , Y10S430/151
摘要： The invention discloses an improvement in the photolithographic patterning method of a photoresist layer formed on a substrate surface with intervention of an anti-reflection coating film, in which the refractive index and the light-absorption coefficient of the anti-reflection coating film are controlled in such a way that, in a graph prepared by plotting the thickness of the anti-reflection coating film taken as the abscissa values and the reflectivity of the light for patterning exposure at the interface between the anti-reflection coating film and the photoresist layer thereon taken as the ordinate values, the range of the variation in the film thickness corresponding to an increment of 0.01 in the reflectivity in the vicinity of the minimum point on the thickness vs. reflectivity curve does not exceed ±0.01 &mgr;m.
摘要翻译：本发明公开了在防反射涂膜的介入下形成在基板表面上的光致抗蚀剂层的光刻图案化方法的改进，其中防反射涂膜的折射率和光吸收系数被控制在这样一种方式，在通过绘制作为横坐标值的抗反射涂膜的厚度和用于图案曝光的光的反射率制成的图中，其中所述抗反射涂膜和其上的光致抗蚀剂层之间的界面被取下作为纵坐标值，厚度与反射率曲线之间的最小点附近的反射率中对应于0.01的增量的膜厚度的变化范围不超过±0.01μm。

4. 发明授权

US09244358B2 Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate 有权
标题翻译：表面处理液，表面处理方法，疏水化方法和疏水化底物
公开(公告)号：US09244358B2
公开(公告)日：2016-01-26
申请号：US13123341
申请日：2009-09-15
申请人： Jun Koshiyama , Kazumasa Wakiya
发明人： Jun Koshiyama , Kazumasa Wakiya
IPC分类号： C09K3/18 , G03F7/40 , H01L23/29 , G03F7/16 , H01L21/306 , G03F7/20
CPC分类号： G03F7/405 , C09K3/18 , G03F7/16 , G03F7/2041 , H01L21/306 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a surface treatment liquid which enables simple and efficient hydrophobilization of a substrate and prevention of collapse of a resin pattern or etched pattern. Also disclosed are a surface treatment method using the surface treatment liquid, a hydrophobilization method using the surface treatment liquid, and a hydrophobilized substrate. When a substrate is hydrophobilized, the substrate is coated with a surface treatment liquid containing a silylating agent and a hydrocarbon non-polar solvent. When a pattern is prevented from collapse, the surface of a resin pattern formed on a substrate or etched pattern formed on a substrate by etching is treated using a surface treatment liquid containing a silylating agent and a solvent.
摘要翻译：公开了一种表面处理液体，其能够简单且有效地对基材进行疏水化，并防止树脂图案或蚀刻图案的塌陷。还公开了使用表面处理液的表面处理方法，使用表面处理液的疏水化方法和疏水化基材。当底物被疏水化时，用含有甲硅烷基化剂和烃类非极性溶剂的表面处理液涂覆基材。当防止图案塌陷时，通过使用含有甲硅烷基化剂和溶剂的表面处理液对通过蚀刻形成在基板上形成的树脂图案的表面或蚀刻图案进行处理。

5. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

6. 发明申请

US20100035177A1 METHOD FOR FORMING PATTERN, AND MATERIAL FOR FORMING COATING FILM 有权
标题翻译：形成图案的方法和形成涂膜的材料
公开(公告)号：US20100035177A1
公开(公告)日：2010-02-11
申请号：US12443118
申请日：2007-09-13
申请人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
发明人： Kiyoshi Ishikawa , Jun Koshiyama , Kazumasa Wakiya
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/0273 , G03F7/0035 , G03F7/40 , H01L21/0337 , H01L21/0338 , Y10S430/128
摘要： A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).
摘要翻译：提供一种用于形成能够减少双重图案化工艺中的台阶数的图案的新颖方法和用于形成图案的方法中适当使用的涂膜形成材料。通过在支撑体（1）上涂覆第一化学放大抗蚀剂组合物形成第一抗蚀剂膜（2），从而形成膜被选择性地曝光并显影以形成多个第一抗蚀剂图案（3）。接下来，通过分别形成由水溶性树脂膜构成的涂膜（4），在第一抗蚀剂图案（3）的表面上形成多个涂布图案（5）。此外，在其上形成有涂层图案（5）的支撑体（1）上施加第二化学放大抗蚀剂组合物以形成第二抗蚀剂膜（6），其被选择性地暴露和显影以形成多个第二抗蚀剂图案（7）。因此，在支撑体（1）上形成包括涂布图案（5）和第二抗蚀图案（7）的图案。

7. 发明申请

US20080096141A1 Cleaning Liquid For Lithography And Method For Resist Pattern Formation 有权
标题翻译：用于平版印刷的清洁液和抗蚀剂图案形成方法
公开(公告)号：US20080096141A1
公开(公告)日：2008-04-24
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03C5/56 , G03C11/00
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。

8. 发明授权

US07795197B2 Cleaning liquid for lithography and method for resist pattern formation 有权
标题翻译：光刻用清洗液及抗蚀剂图案形成方法
公开(公告)号：US07795197B2
公开(公告)日：2010-09-14
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D1/75
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8-20个碳原子的烷基或羟烷基; R2和R3表示碳原子数1〜5的烷基或羟烷基。

9. 发明授权

US07741260B2 Rinsing fluid for lithography 失效
标题翻译：用于光刻的冲洗液
公开(公告)号：US07741260B2
公开(公告)日：2010-06-22
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： C11D7/32
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式式：Rf'-COOH：其中R 1和R 2各自是氢或被氟部分或全部取代的任选取代的C 1-5烷基，或者R 1和R 2与它们所键合的SO 2基团和氮原子可形成五元或六元环; Rf是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; Rf'为至少部分氟化的碳原子数为8〜20的烷基。

10. 发明申请

US20060128581A1 Lithographic rinse solution and method for forming patterned resist layer using the same 有权
标题翻译：平版印刷冲洗液及其形成图案化抗蚀剂层的方法
公开(公告)号：US20060128581A1
公开(公告)日：2006-06-15
申请号：US11296343
申请日：2005-12-08
申请人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Jun Koshiyama , Kazumasa Wakiya , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： C11D9/00
CPC分类号： C11D7/3281 , C11D11/0047
摘要： The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.
摘要翻译：本发明提供了一种用于在用于制造半导体器件和液晶显示面板的光刻工艺中用碱性显影剂水溶液显影的图案化光刻胶层的漂洗处理步骤中使用的新型冲洗溶液。本发明提供的冲洗溶液为浓度高达10质量％的含氮杂环化合物如咪唑啉，吡啶等的水溶液。任选地，本发明的冲洗溶液还含有水混溶性醇或乙醇酸有机溶剂和/或水溶性树脂。本发明还提供了一种用于形成图案化光致抗蚀剂层的光刻方法，包括用上述定义的冲洗溶液冲洗处理碱显影抗蚀剂层的步骤。本发明提供了关于产品质量和工艺效率的光刻工艺的改进。

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