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1. 发明申请

US20140009932A1 LIGHT EMITTING DIODE PRIMARY OPTIC FOR BEAM SHAPING 有权
标题翻译：光发射二极管主光学用于光束形状
公开(公告)号：US20140009932A1
公开(公告)日：2014-01-09
申请号：US13544662
申请日：2012-07-09
申请人： Eric Tarsa , Monica Hansen , Bernd Keller
发明人： Eric Tarsa , Monica Hansen , Bernd Keller
IPC分类号： F21V7/04 , F21V7/00
CPC分类号： H01L33/54 , F21K9/233 , F21S8/026 , F21V7/0008 , F21V7/005 , F21V13/04 , F21V29/74 , F21Y2115/10
摘要： LED components are described having primary optics provide improved LED component emission characteristics. Light fixtures are also described that utilize the LED components to provide improved light fixture emissions. One LED component according to the present invention comprises an LED chip emitting an LED chip emission pattern. A primary optic is included directly on the LED chip with LED light from the LED chip passing through the primary optic. The primary optic shapes the LED emission pattern into an LED component emission pattern with the LED component emission pattern being broader than the LED chip emission pattern.
摘要翻译：描述了具有主要光学器件的LED组件，提供了改进的LED组件发射特性。还描述了利用LED组件来提供改进的灯具排放物的灯具。根据本发明的一个LED组件包括发射LED芯片发射图案的LED芯片。主要光学元件直接包含在LED芯片上，LED芯片的LED光通过主光学元件。主要光学器件将LED发射图案形成LED组件发射图案，其中LED组件发射图案比LED芯片发射图案更宽。

2. 发明授权

US08931929B2 Light emitting diode primary optic for beam shaping 有权
标题翻译：用于光束整形的发光二极管主光学器件
公开(公告)号：US08931929B2
公开(公告)日：2015-01-13
申请号：US13544662
申请日：2012-07-09
申请人： Eric Tarsa , Monica Hansen , Bernd Keller
发明人： Eric Tarsa , Monica Hansen , Bernd Keller
IPC分类号： F21V3/00
CPC分类号： H01L33/54 , F21K9/233 , F21S8/026 , F21V7/0008 , F21V7/005 , F21V13/04 , F21V29/74 , F21Y2115/10
摘要： LED components are described having primary optics provide improved LED component emission characteristics. Light fixtures are also described that utilize the LED components to provide improved light fixture emissions. One LED component according to the present invention comprises an LED chip emitting an LED chip emission pattern. A primary optic is included directly on the LED chip with LED light from the LED chip passing through the primary optic. The primary optic shapes the LED emission pattern into an LED component emission pattern with the LED component emission pattern being broader than the LED chip emission pattern.
摘要翻译：描述了具有主要光学器件的LED组件，提供了改进的LED组件发射特性。还描述了利用LED组件来提供改进的灯具排放物的灯具。根据本发明的一个LED组件包括发射LED芯片发射图案的LED芯片。主要光学元件直接包含在LED芯片上，LED芯片的LED光通过主光学元件。主要光学器件将LED发射图案形成LED组件发射图案，其中LED组件发射图案比LED芯片发射图案更宽。

3. 发明授权

US08679876B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08679876B2
公开(公告)日：2014-03-25
申请号：US12826305
申请日：2010-06-29
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

4. 发明授权

US08050304B2 Group-III nitride based laser diode and method for fabricating same 有权
标题翻译： III族氮化物基激光二极管及其制造方法
公开(公告)号：US08050304B2
公开(公告)日：2011-11-01
申请号：US12880392
申请日：2010-09-13
申请人： Steven Denbaars , Shuji Nakamura , Monica Hansen
发明人： Steven Denbaars , Shuji Nakamura , Monica Hansen
IPC分类号： H01S5/00 , H04B10/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

5. 发明授权

US07915629B2 Composite high reflectivity layer 有权
标题翻译：复合高反射层
公开(公告)号：US07915629B2
公开(公告)日：2011-03-29
申请号：US12316097
申请日：2008-12-08
申请人： Ting Li , Monica Hansen , James Ibbetson
发明人： Ting Li , Monica Hansen , James Ibbetson
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.
摘要翻译：一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

6. 发明授权

US07682944B2 Pendeo epitaxial structures and devices 有权
标题翻译： Pendeo外延结构和器件
公开(公告)号：US07682944B2
公开(公告)日：2010-03-23
申请号：US11957154
申请日：2007-12-14
申请人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
发明人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译：一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

7. 发明授权

US07769066B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US07769066B2
公开(公告)日：2010-08-03
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

8. 发明申请

US20100330720A1 GROUP-III NITRIDE BASED LASER DIODE AND METHOD FOR FABRICATING SAME 有权
标题翻译：基于III族氮化物的激光二极管及其制造方法
公开(公告)号：US20100330720A1
公开(公告)日：2010-12-30
申请号：US12880392
申请日：2010-09-13
申请人： STEVEN DENBAARS , Shuji Nakamura , Monica Hansen
发明人： STEVEN DENBAARS , Shuji Nakamura , Monica Hansen
IPC分类号： H01L21/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

9. 发明申请

US20100273281A1 LASER DIODE AND METHOD FOR FABRICATING SAME 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20100273281A1
公开(公告)日：2010-10-28
申请号：US12826305
申请日：2010-06-29
申请人： ARPAN CHAKRABORTY , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： ARPAN CHAKRABORTY , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

10. 发明授权

US07813400B2 Group-III nitride based laser diode and method for fabricating same 有权
标题翻译： III族氮化物基激光二极管及其制造方法
公开(公告)号：US07813400B2
公开(公告)日：2010-10-12
申请号：US11600617
申请日：2006-11-15
申请人： Steven Denbaars , Shuji Nakamura , Monica Hansen
发明人： Steven Denbaars , Shuji Nakamura , Monica Hansen
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/2081 , H01S5/22 , H01S5/3063 , H01S5/3216 , H01S2304/00 , Y10T428/12875
摘要： A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure.
摘要翻译：一种激光二极管，包括第一分离限制异质结构和第一分离限制性异质结构上的有源区。第二分离的限制异质结构在有源区上，一个或多个外延层位于第二分离限制异质结构上。在外延层中形成具有围绕脊的第一台面的脊。第一台面比第二限制异质结构高0.1至0.2微米。

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