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1. 发明授权

US07682944B2 Pendeo epitaxial structures and devices 有权
标题翻译： Pendeo外延结构和器件
公开(公告)号：US07682944B2
公开(公告)日：2010-03-23
申请号：US11957154
申请日：2007-12-14
申请人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
发明人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译：一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

2. 发明申请

US20090152565A1 PENDEO EPITAXIAL STRUCTURES AND DEVICES 有权
标题翻译： PENDEO外形结构和设备
公开(公告)号：US20090152565A1
公开(公告)日：2009-06-18
申请号：US11957154
申请日：2007-12-14
申请人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
发明人： George R. Brandes , Arpan Chakraborty , Shuji Nakamura , Monica Hansen , Steven Denbaars
IPC分类号： H01L29/20 , H01L21/76
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译：一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

3. 发明授权

US08679876B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US08679876B2
公开(公告)日：2014-03-25
申请号：US12826305
申请日：2010-06-29
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

4. 发明申请

US20080112452A1 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US20080112452A1
公开(公告)日：2008-05-15
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

5. 发明授权

US07769066B2 Laser diode and method for fabricating same 有权
标题翻译：激光二极管及其制造方法
公开(公告)号：US07769066B2
公开(公告)日：2010-08-03
申请号：US11600604
申请日：2006-11-15
申请人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
发明人： Arpan Chakraborty , Monica Hansen , Steven Denbaars , Shuji Nakamura , George Brandes
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/2004 , H01S5/3406
摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.
摘要翻译：一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。因此，n型SLS可以以增加的Al百分数生长以增加折射率。这与其他功能一起允许降低阈值电流和电压操作。

6. 发明申请

US20070093073A1 Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权
标题翻译：用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术
公开(公告)号：US20070093073A1
公开(公告)日：2007-04-26
申请号：US11444946
申请日：2006-06-01
申请人： Robert Farrell , Troy Baker , Arpan Chakraborty , Benjamin Haskell , P. Pattison , Rajat Sharma , Umesh Mishra , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Robert Farrell , Troy Baker , Arpan Chakraborty , Benjamin Haskell , P. Pattison , Rajat Sharma , Umesh Mishra , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译：一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。

7. 发明申请

US20050214992A1 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 有权
标题翻译：通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件
公开(公告)号：US20050214992A1
公开(公告)日：2005-09-29
申请号：US11123805
申请日：2005-05-06
申请人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven Denbaars , Shuji Nakamura , Umesh Mishra
发明人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven Denbaars , Shuji Nakamura , Umesh Mishra
IPC分类号： H01L21/20 , H01L21/205 , H01L29/15 , H01L31/0312 , H01L33/00
CPC分类号： H01L21/0242 , H01L21/02378 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02647 , H01L33/0075 , H01L33/18 , Y10S438/938
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译：制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

8. 发明申请

US20070111488A1 FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROSTRUCTURES AND DEVICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过金属化学气相沉积制备非金属氮化物薄膜，异质结构和器件
公开(公告)号：US20070111488A1
公开(公告)日：2007-05-17
申请号：US11621479
申请日：2007-01-09
申请人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
发明人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
IPC分类号： H01L21/20
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译：制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。

9. 发明申请

US20070267654A1 In-situ defect reduction techniques for nonpolar and semipolar (Al,Ga, In)N 有权
标题翻译：非极性和半极性（Al，Ga，In）N的原位缺陷还原技术
公开(公告)号：US20070267654A1
公开(公告)日：2007-11-22
申请号：US11801283
申请日：2007-05-09
申请人： Arpan Chakraborty , Kwang-Choong Kim , James Speck , Steven DenBaars , Umesh Mishra
发明人： Arpan Chakraborty , Kwang-Choong Kim , James Speck , Steven DenBaars , Umesh Mishra
IPC分类号： H01L31/00 , H01L21/28 , H01L21/3205
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译：公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiN x N）纳米掩模层，以及（b）在SiN的顶部生长GaN膜的厚度， SUB> x 纳米掩模层。

10. 发明申请

US20110101301A1 LIGHT EMITTING DEVICE WITH A COUPLED QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有耦合量子阱结构的发光器件
公开(公告)号：US20110101301A1
公开(公告)日：2011-05-05
申请号：US12916218
申请日：2010-10-29
申请人： You-Da Lin , Arpan Chakraborty , Shuji Nakamura , Steven P. DenBaars
发明人： You-Da Lin , Arpan Chakraborty , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/32
摘要： A light emitting device with a coupled quantum well structure in an active region. The coupled quantum well structure may include two or more wells are separated by one or more mini-barriers, and the wells and mini-barriers together are sandwiched by barriers. The coupled quantum well structure provides almost the same effect as a wide quantum well, due to the coupling of the wavefunctions through the mini-barrier. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device.
摘要翻译：一种在有源区域中具有耦合的量子阱结构的发光器件。耦合的量子阱结构可以包括两个或更多个孔被一个或多个微型屏障隔开，并且阱和微型屏障一起夹在屏障之间。耦合量子阱结构提供了与宽量子阱几乎相同的效果，这是由于通过微型屏障的波函数的耦合。发光器件可以是非极性，半极性或极性（Al，Ga，In）N基发光器件。

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