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1. 发明申请

US20160225615A1 PRECURSORS FOR SILICON DIOXIDE GAP FILL 审中-公开
标题翻译：硅二氧化硅填料的前身
公开(公告)号：US20160225615A1
公开(公告)日：2016-08-04
申请号：US15093865
申请日：2016-04-08
申请人： Entegris, Inc.
发明人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
IPC分类号： H01L21/02 , H01L29/06
CPC分类号： H01L21/02211 , H01L21/02123 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02263 , H01L21/31604 , H01L21/31608 , H01L29/0649
摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.
摘要翻译：描述了一种全填充沟槽结构，其包括其中具有高纵横比沟槽的微电子器件衬底，并填充了其整个整体质量基本上无空隙特征和基本均匀密度的二氧化硅。还描述了制造半导体产品的方法，其涉及使用特定的硅前体组合物，用于在沟槽中形成基本上无空隙且基本均匀的密度二氧化硅材料。前体填充组合物可以包括硅和锗，以产生包括GeO 2 / SiO 2沟槽填充材料的微电子器件结构。可以在前体填充组合物中使用抑制剂组分，以消除或最小化固化沟槽填充材料中的接缝形成。

2. 发明授权

US10043658B2 Precursors for silicon dioxide gap fill 有权
公开(公告)号：US10043658B2
公开(公告)日：2018-08-07
申请号：US15862205
申请日：2018-01-04
申请人： Entegris, Inc.
发明人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
IPC分类号： H01L21/02 , H01L29/06
摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

3. 发明授权

US09219232B2 Antimony and germanium complexes useful for CVD/ALD of metal thin films 有权
标题翻译：用于金属薄膜的CVD / ALD的锑和锗络合物
公开(公告)号：US09219232B2
公开(公告)日：2015-12-22
申请号：US14251475
申请日：2014-04-11
申请人： Entegris, Inc.
发明人： William Hunks , Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum , Matthias Stender , Philip S. H. Chen , Gregory T. Stauf , Bryan C. Hendrix
IPC分类号： H01L21/36 , H01L45/00 , C07C251/08 , C07F7/00 , C07F7/10 , C07F7/28 , C07F9/90 , C07F17/00 , C23C16/18 , C23C16/30
CPC分类号： H01L45/1616 , C07C251/08 , C07F7/003 , C07F7/10 , C07F7/28 , C07F9/90 , C07F9/902 , C07F17/00 , C23C16/18 , C23C16/305 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683
摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
摘要翻译：描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造方法。本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

4. 发明申请

US20180130654A1 PRECURSORS FOR SILICON DIOXIDE GAP FILL 审中-公开
公开(公告)号：US20180130654A1
公开(公告)日：2018-05-10
申请号：US15862205
申请日：2018-01-04
申请人： Entegris, Inc.
发明人： William Hunks , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Steven M. Bilodeau , Weimin Li
IPC分类号： H01L21/02 , H01L29/06
CPC分类号： H01L21/02211 , H01L21/02123 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02263 , H01L21/31604 , H01L21/31608 , H01L29/0649
摘要： A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

5. 发明授权

US09537095B2 Tellurium compounds useful for deposition of tellurium containing materials 有权
标题翻译：用于沉积含碲材料的碲化合物
公开(公告)号：US09537095B2
公开(公告)日：2017-01-03
申请号：US14332924
申请日：2014-07-16
申请人： Entegris, Inc.
发明人： Matthias Stender , Chongying Xu , Tianniu Chen , William Hunks , Philip S. H. Chen , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C23C16/00 , H01L45/00 , C07C333/16 , C07C395/00 , C07F7/10 , C23C16/30
CPC分类号： H01L45/1616 , C07C333/16 , C07C395/00 , C07F7/10 , C23C16/305
摘要： Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
摘要翻译：用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。

6. 发明申请

US20140329357A1 TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS 有权
标题翻译：用于沉积含碲化物材料的细颗粒化合物
公开(公告)号：US20140329357A1
公开(公告)日：2014-11-06
申请号：US14332924
申请日：2014-07-16
申请人： Entegris, Inc.
发明人： Matthias Stender , Chongying Xu , Tianniu Chen , William Hunks , Philip S.H. Chen , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： H01L45/00
CPC分类号： H01L45/1616 , C07C333/16 , C07C395/00 , C07F7/10 , C23C16/305
摘要： Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
摘要翻译：用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。

7. 发明授权

US09534285B2 Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films 有权
标题翻译：用于钛酸盐，镧系元素和钽酸盐介电膜的原子层沉积和化学气相沉积的前体组合物
公开(公告)号：US09534285B2
公开(公告)日：2017-01-03
申请号：US14301861
申请日：2014-06-11
申请人： Entegris, Inc.
发明人： Chongying Xu , Tianniu Chen , Thomas M. Cameron , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C23C16/40 , C23C14/08 , C07F17/00 , C23C16/455
CPC分类号： C23C14/088 , C07F17/00 , C23C16/409 , C23C16/45553
摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.
摘要翻译：用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布材料制造闪存等微电子器件。

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