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1. 发明授权

US06303464B1 Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layer 失效
标题翻译：用于通过电介质层中的封闭空隙减小互连系统电容的方法和结构
公开(公告)号：US06303464B1
公开(公告)日：2001-10-16
申请号：US08774382
申请日：1996-12-30
申请人： Eng T. Gaw , Quat T. Vu , David B. Fraser , Chien Chiang , Ian A. Young , Thomas N. D. Marieb
发明人： Eng T. Gaw , Quat T. Vu , David B. Fraser , Chien Chiang , Ian A. Young , Thomas N. D. Marieb
IPC分类号： H01L2176
CPC分类号： H01L21/7682
摘要： A reduced capacitance interconnect system. A first metal layer is formed to a predetermined level above a first dielectric layer which is formed on a semiconductor substrate. The first metal layer level forms multiple interconnect lines wherein each interconnect line is separated from each adjacent interconnect line by a trench including a trench having a highest aspect ratio. A second dielectric layer is formed on the first metal layer and in the trenches between the interconnect lines such that an enclosed void having a void tip substantially level with the top of the metal layer is formed in at least each trench having an aspect ratio above a predetermined minimum aspect ratio, wherein the enclosed void in the trench having the highest aspect ratio has a void volume which is at least 15% of the volume of the trench.
摘要翻译：降低电容互连系统。第一金属层形成在形成在半导体衬底上的第一介电层上方的预定水平。第一金属层级形成多个互连线，其中每个互连线通过包括具有最高纵横比的沟槽的沟槽与每个相邻的互连线分开。在第一金属层和互连线之间的沟槽中形成第二电介质层，使得具有空隙尖端的封闭空隙与金属层的顶部基本一致地形成在至少每个沟槽中，其纵横比高于预定的最小纵横比，其中具有最高纵横比的沟槽中的封闭空隙具有至少占沟槽体积的15％的空隙体积。

2. 发明授权

US5348826A Reticle with structurally identical inverted phase-shifted features 失效
标题翻译：具有结构相同的反相移相特征的标线片
公开(公告)号：US5348826A
公开(公告)日：1994-09-20
申请号：US12564
申请日：1993-02-02
申请人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
发明人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase. Also, since each pattern is structurally identical, any focal shift due to phase error is in the same direction for all patterns, so that an acceptable depth of field is maintained for a substrate exposed with the reticle.
摘要翻译：具有彼此相邻的图案的相移掩模版具有用于特征和相移元件的反相，以及制造掩模版的方法。每个图案和反相图案在相移方向上在结构上是相同的，因此对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向。在优选实施例中，结构相同的相反的掩模版用于形成紧密间隔的接触或通孔的阵列。对于标线板上的第一个图案，该特征将为0°相位，该特征周围的相移边缘将为180°相位。围绕第一图案的所有图案都具有0°相位的相移边界和180°相位的特征。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是180°异相的。此外，由于每个图案在结构上相同，所以对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向，因此对于用掩模版曝光的基底，可以保持可接受的景深。

3. 发明授权

US5633102A Lithography using a new phase-shifting reticle 失效
标题翻译：使用新的相移掩模版进行平版印刷
公开(公告)号：US5633102A
公开(公告)日：1997-05-27
申请号：US396926
申请日：1995-03-01
申请人： Kenny K. H. Toh , Giang T. Dao , Eng T. Gaw , Rajeev R. Singh
发明人： Kenny K. H. Toh , Giang T. Dao , Eng T. Gaw , Rajeev R. Singh
IPC分类号： G03F1/34 , G03F9/00
CPC分类号： G03F1/34
摘要： Methods of forming a patterned layer using a reticle having a phase-shifting element and the reticles for making the patterns are disclosed. The methods of the present invention use a phase-shifting element to change the phase of the radiation exiting a reticle about 180.degree. out of phase compared to the radiation exiting the areas immediately adjacent to an edge of the phase-shifting element so that radiation from both areas near the edge destructively interfere with each other so as to cancel out one another thereby resulting in a substantially unexposed region on a semiconductor substrate. The present invention can be used to prevent exposing a large area by using a set of phase-shifting elements to form a grating or checkerboard area.
摘要翻译：公开了使用具有相移元件的掩模版和用于制作图案的掩模版形成图案层的方法。与离开与相移元件的边缘紧邻的区域的辐射相比，本发明的方法使用相移元件来改变离开标线的辐射的相位大约180°异相，使得来自靠近边缘的两个区域相互干涉地彼此抵消，从而在半导体衬底上形成基本上未曝光的区域。本发明可以用于通过使用一组移相元件来防止暴露大面积以形成光栅或棋盘区域。

4. 发明授权

US5384219A Reticle with structurally identical inverted phase-shifted features 失效
标题翻译：具有结构相同的反相移相特征的标线片
公开(公告)号：US5384219A
公开(公告)日：1995-01-24
申请号：US114953
申请日：1993-08-31
申请人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
发明人： Giang T. Dao , Qi De Qian , Nelson N. Tam , Eng T. Gaw , Harry H. Fujimoto
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and method of fabricating the reticle. Each of the patterns and inverted patterns are structurally identical with regard to the direction of phase shift, so that any focal shift due to phase error is in the same direction for all patterns. In a preferred embodiment, the structurally identical inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase. Also, since each pattern is structurally identical, any focal shift due to phase error is in the same direction for all patterns, so that an acceptable depth of field is maintained for a substrate exposed with the reticle.
摘要翻译：具有彼此相邻的图案的相移掩模版具有用于特征和相移元件的反相，以及制造掩模版的方法。每个图案和反相图案在相移方向上在结构上是相同的，因此对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向。在优选实施例中，结构相同的相反的掩模版用于形成紧密间隔的接触或通孔的阵列。对于标线板上的第一个图案，该特征将为0°相位，该特征周围的相移边缘将为180°相位。围绕第一图案的所有图案都具有0°相位的相移边界和180°相位的特征。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是180°异相的。此外，由于每个图案在结构上相同，所以对于所有图案，由相位误差引起的任何焦点偏移都是相同的方向，因此对于用掩模版曝光的基底，可以保持可接受的景深。

5. 发明授权

US5354632A Lithography using a phase-shifting reticle with reduced transmittance 失效
标题翻译：使用具有降低的透射率的相移掩模版进行平版印刷
公开(公告)号：US5354632A
公开(公告)日：1994-10-11
申请号：US869026
申请日：1992-04-15
申请人： Giang T. Dao , Kenny K. H. Toh , Eng T. Gaw , Rajeev R. Singh
发明人： Giang T. Dao , Kenny K. H. Toh , Eng T. Gaw , Rajeev R. Singh
IPC分类号： G03F1/00 , G03F1/29 , G03F7/20 , H01L21/027 , H01L21/30 , G03F9/00 , G03F9/02
CPC分类号： G03F7/70283 , G03F1/29
摘要： A reticle and method of forming a patterned resist layer on a semiconductor substrate using the reticle is described. The substrate is coated with a resist layer. The resist layer is selectively exposed to a radiation wave having a wavelength that is transmitted through the reticle. The reticle includes at least one first, second, and third areas. The first area has a first transmittance. The second area is adjacent to the first area and has a second transmittance that is less than the first transmittance. The second area shifts radiation transmitted through the second area approximately 180.degree. out of phase relative to radiation transmitted through the first area. The third area is adjacent to the second area. The third area is substantially opaque to prevent virtually any transmission of radiation. The resist layer is developed to form the patterned resist layer including at least one resist layer opening and at least one resist element.
摘要翻译：描述了使用该掩模版在半导体衬底上形成图案化的抗蚀剂层的掩模版和方法。衬底被涂覆有抗蚀剂层。抗蚀剂层选择性地暴露于具有透射通过掩模版的波长的辐射波。掩模版包括至少一个第一，第二和第三区域。第一区域具有第一透射率。第二区域与第一区域相邻，并且具有小于第一透射率的第二透射率。第二区域相对于通过第一区域传输的辐射，使透射通过第二区域的辐射相差大约180度。第三个区域与第二个区域相邻。第三区域基本上是不透明的，以防止几乎任何辐射的传播。显影抗蚀剂层以形成包括至少一个抗蚀剂层开口和至少一个抗蚀剂元件的图案化抗蚀剂层。

6. 发明授权

US5300379A Method of fabrication of inverted phase-shifted reticle 失效
标题翻译：倒相相位掩模版的制作方法
公开(公告)号：US5300379A
公开(公告)日：1994-04-05
申请号：US933341
申请日：1992-08-21
申请人： Giang T. Dao , Eng T. Gaw , Nelson N. Tam , Ruben A. Rodriquez
发明人： Giang T. Dao , Eng T. Gaw , Nelson N. Tam , Ruben A. Rodriquez
IPC分类号： G03F1/29 , G03F1/30 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F7/70283 , G03F7/70625 , G03F7/70641
摘要： A phase-shifted reticle with patterns proximate each other having inverted phases for the features and phase-shifting elements, and methods of fabricating the reticle, are disclosed. In a preferred embodiment, the inverted reticle is used to form an array of closely spaced contact or via openings. For a first pattern on the reticle, the feature will be the 0.degree. phase and the phase-shifting rim surrounding that feature will be the 180.degree. phase. All patterns surrounding the first pattern have phase-shifting rims of the 0.degree. phase and features of the 180.degree. phase. In this way, each pattern can form below conventional resolution features in the resist. Additionally, there will not be exposure of the regions between the closely spaced features since radiation transmitted through the closely spaced phase-shifting rims of the two patterns is 180.degree. out of phase.
摘要翻译：公开了一种具有彼此邻近的图案的相移掩模版，具有用于特征和相移元件的反相，以及制造掩模版的方法。在优选实施例中，反相的掩模版用于形成紧密间隔的接触或通孔的阵列。对于刻线上的第一个图案，该特征将为0度相位，并且该特征周围的相移边缘将为180度相位。围绕第一图案的所有图案都具有0度相位和180度相位特征的移相轮缘。以这种方式，每个图案可以在抗蚀剂中形成为低于常规分辨率特征。另外，在紧密间隔的特征之间不会发生区域的曝光，因为通过两个图案的紧密间隔的相移轨道的辐射是相位相差180度。

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