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    • 1. 发明授权
    • Photoimageable dielectric epoxy resin system film
    • 可光成像介电环氧树脂体系膜
    • US06835533B2
    • 2004-12-28
    • US10781073
    • 2004-02-18
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • G03F7038
    • G03F7/0385G03F7/038H05K3/0023H05K3/4644H05K3/4676Y10T428/24851
    • A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0% to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
    • 一种制造电路化基板的方法,其减少短路,并且不需要烘烤和得到的膜。 该方法使用溶剂含量小于约5%的光致成像电介质膜,当固化时玻璃化转变温度大于约110℃。提供具有约95%至约100的光致成像电介质膜 %固体,并且包含:0%至约30%的固体,颗粒状流变改性剂; 约70%至约100%的环氧树脂体系的固体(20℃的液体),包含:约85%至约99.9%的环氧树脂; 和约0.1至15份的总树脂重量,阳离子光引发剂; 0%至约5%的溶剂; 将光致成像电介质膜施加到电路化基板上; 并将膜暴露于光化辐射。
    • 2. 发明授权
    • Method of fabricating circuitized structures
    • 制造电路结构的方法
    • US06706464B2
    • 2004-03-16
    • US10345561
    • 2003-01-16
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • G03F740
    • G03F7/0385G03F7/038H05K3/0023H05K3/4644H05K3/4676Y10T428/24851
    • A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film, is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier, from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C. comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0 to about 5% solvent, applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
    • 一种制造电路化基板的方法,其减少短路,并且不需要烘烤和得到的膜。 该方法采用溶剂含量小于约5%的光致成像电介质膜,当固化时玻璃化转变温度大于约110℃。提供了可见光电介质膜,其具有约95%至约 100%固体,并且包含:固体的0%至约30%的颗粒状流变改性剂,约70%至约100%的环氧树脂体系的固体(液体在20℃,包括:来自 约85%至约99.9%的环氧树脂;和约0.1至15份的总树脂重量,阳离子光引发剂; 0至约5%的溶剂,将可光成像的电介质膜施加到电路化基板;以及将膜暴露于 光化辐射。
    • 3. 发明授权
    • Method of fabricating circuitized structures
    • 制造电路结构的方法
    • US06528218B1
    • 2003-03-04
    • US09808334
    • 2001-03-14
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • Elizabeth FosterGary A. JohanssonHeike MarcelloDavid J. Russell
    • G03F711
    • G03F7/0385G03F7/038H05K3/0023H05K3/4644H05K3/4676Y10T428/24851
    • A method for fabricating circuitized substrates which reduces shorts, and does not require baking and resulting film. The method employs a photoimageable dielectric film, having a solvent content less than about 5%, and a glass transition temperature, when cured, which is greater than about 110° C. A photoimageable dielectric film is provided having from about 95% to about 100% solids, and comprising: from 0% to about 30% of the solids, of a particulate rheology modifier; from about 70% to about 100% of the solids of an epoxy resin system (liquid at 20° C.) comprising: from about 85% to about 99.9% epoxy resins; and from about 0.1 to 15 parts of the total resin weight, a cationic photoinitiator; from 0 to about 5% solvent; applying the photoimageable dielectric film to a circuitized substrate; and exposing the film to actinic radiation.
    • 一种制造电路化基板的方法,其减少短路,并且不需要烘烤和得到的膜。 该方法使用溶剂含量小于约5%的光致成像电介质膜,当固化时玻璃化转变温度大于约110℃。提供具有约95%至约100的光致成像电介质膜 %固体,并且包含:0%至约30%的固体,颗粒状流变改性剂; 约70%至约100%的环氧树脂体系的固体(20℃的液体),包含:约85%至约99.9%的环氧树脂; 和约0.1至15份的总树脂重量,阳离子光引发剂; 0至约5%的溶剂; 将光致成像电介质膜施加到电路化基板上; 并将膜暴露于光化辐射。