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1. 发明授权

US08877297B2 Deposition method 有权
标题翻译：沉积法
公开(公告)号：US08877297B2
公开(公告)日：2014-11-04
申请号：US13993266
申请日：2010-12-15
申请人： Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
发明人： Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
IPC分类号： B05D1/06 , C23C24/04 , B05B7/14
CPC分类号： B05B7/1404 , C23C24/04
摘要： A deposition method is provided to enable fine particles having a relatively large particle diameter, for example, a diameter larger than 0.5 μm, to be stably deposited on a substrate. The fine particles with insulating surface are placed in an airtight container, and a carrier gas is introduced into the container, triboelectrically charging the fine particles and generating an aerosol of the fine particles. The fine particles are charged by friction with the inner surface of a transfer tubing connected to the container, and the aerosol is conveyed via such tubing to a deposition chamber that is maintained at a pressure lower than that in the airtight container. The charged fine particles are deposited on a substrate placed in the deposition chamber.
摘要翻译：提供沉积方法以使得具有相对较大粒径（例如，大于0.5μm的直径）的细颗粒能够稳定地沉积在基底上。将具有绝缘表面的细颗粒放置在密封容器中，并将载气引入容器中，对细颗粒进行摩擦充电并产生细颗粒的气溶胶。微粒通过与连接到容器的输送管的内表面的摩擦而被加载，并且气雾剂经由这样的管输送到沉积室，该沉积室保持在低于气密容器中的压力。带电的微粒沉积在沉积室中的基底上。

2. 发明申请

US20130280414A1 DEPOSITION METHOD 有权
标题翻译：沉积方法
公开(公告)号：US20130280414A1
公开(公告)日：2013-10-24
申请号：US13993266
申请日：2010-12-15
申请人： Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
发明人： Eiji Fuchita , Eiji Tokizaki , Eiichi Ozawa
IPC分类号： B05B7/14
CPC分类号： B05B7/1404 , C23C24/04
摘要： [Object] To provide a deposition method that enables fine particles having a relatively large particle diameter (at least larger than 0.5 μm diameter) to be more stably deposited on a substrate by using a simple configuration.[Solving Means] In the deposition method, fine particles P whose surface is at least insulative are placed in an airtight container 2, and a carrier gas is introduced into the container, thereby triboelectrically charging the fine particles and generating an aerosol A of the fine particles. The fine particles in question are charged by friction with the inner surface of a transfer tubing 6 connected to the container, and the aerosol is conveyed via such tubing to a deposition chamber 3 which is maintained at a pressure lower than that in the airtight container. The charged fine particles are deposited on a substrate S placed in the deposition chamber.
摘要翻译：本发明提供一种能够通过简单的结构将具有较大粒径（至少大于0.5μm直径）的细颗粒更稳定地沉积在基板上的沉积方法。 [解决方案]在沉积方法中，将表面至少是绝缘的细颗粒P放置在气密容器2中，并将载气引入容器中，由此摩擦带电微细颗粒并产生微细气溶胶A 粒子。所讨论的细颗粒通过与连接到容器的转移管6的内表面的摩擦而被充电，并且气雾剂经由这样的管输送到沉积室3，沉积室3保持在低于气密容器中的压力。带电的微粒沉积在沉积室中的衬底S上。

3. 发明授权

US5677480A Method and system for assessing the operating condition of a pressure regulator in a corrosive gas distribution system 失效
标题翻译：评估腐蚀性气体分配系统中压力调节器运行状况的方法和系统
公开(公告)号：US5677480A
公开(公告)日：1997-10-14
申请号：US393684
申请日：1995-02-24
申请人： A. Nimal Liyanage , Eiichi Ozawa , Kazuo Yokogi , Jean-Marie Friedt
发明人： A. Nimal Liyanage , Eiichi Ozawa , Kazuo Yokogi , Jean-Marie Friedt
IPC分类号： F17D5/00 , B01J3/02 , G01M3/28 , H01L21/02 , G01M3/04
CPC分类号： G01M3/2876
摘要： A method of detecting a malfunction or failure of a pressure regulator in a corrosive or reactive gas distribution system while in use involves continuously measuring or monitoring the output pressure of the pressure regulator, both in the presence and the absence of gas flow. The onset of a malfunction of the pressure regulator can be predicted when the differential output pressure between flowing and non-flowing gas fluctuates highly and increases gradually. Failure of the pressure regulator or of the total system is detected when the differential output pressure in the presence and absence of flowing gas exceeds some experimentally determined value.
摘要翻译：在使用中检测腐蚀性或反应性气体分配系统中的压力调节器的故障或故障的方法包括在存在和不存在气体流动的情况下连续测量或监测压力调节器的输出压力。当流动和不流动的气体之间的差分输出压力高度波动并逐渐增加时，可以预测压力调节器故障的开始。当存在和不存在流动气体时的差压输出压力超过一定的实验值时，可以检测到压力调节器或整个系统的故障。

4. 发明授权

US5254369A Method of forming a silicon diffusion and/or overlay coating on the surface of a metallic substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在金属基底的表面上形成硅扩散和/或覆盖涂层的方法
公开(公告)号：US5254369A
公开(公告)日：1993-10-19
申请号：US878465
申请日：1992-05-05
申请人： Juichi Arai , Eiichi Ozawa , Jean-Marie Friedt
发明人： Juichi Arai , Eiichi Ozawa , Jean-Marie Friedt
IPC分类号： C23C10/08 , C23C16/02 , C23C16/24 , C23C16/00
CPC分类号： C23C10/08 , C23C16/0209 , C23C16/24
摘要： The invention relates to a method of forming a silicon diffusion and/or overlay coating on the surface of a metallic substrate comprising the steps of introducing the sample into a cold wall Low Pressure Chemical Vapor Deposition (LPCVD) enclosure, evacuating the enclosure up to a pressure P.sub.1 which is lower than 0.5 Torr, maintaining said pressure P.sub.1 while heating up said sample to a temperature which is comprised between about room temperature and about 300.degree. C., bringing under same pressure P1 the sample to the CVD temperature comprised between about 50.degree. C. and 1000.degree. C., introducing a gas or gas mixture comprising at least one silicon hydride gas, maintaining the pressure inside the enclosure between about 0.1 and about 100 Torr, maintaining the introduction of said gas or gas mixture in the enclosure for deposition and/or diffusion of silicon on and/or through the surface of said metallic sample to obtain the desired thickness of the silicon diffusion and/or overlay coating, cooling down the sample to about room temperature and withdrawing said sample from said LPCVD enclosure. The substrate is preferably polished to obtain a mirror finish and then cleaned, either mechanically or chemically, with a solvent, or both.
摘要翻译：本发明涉及一种在金属基底的表面上形成硅扩散和/或覆盖涂层的方法，包括以下步骤：将样品引入冷壁低压化学气相沉积（LPCVD）外壳中，将外壳排空至压力P1低于0.5托，保持所述压力P1，同时将所述样品加热至约室温至约300℃之间的温度，使相同压力下的样品达到约50℃的CVD温度导入包含至少一种氢化硅气体的气体或气体混合物，将外壳内的压力保持在约0.1至约100托之间，保持在外壳中引入所述气体或气体混合物在所述金属样品的表面上和/或通过所述金属样品的表面沉积和/或扩散硅，以获得硅扩散和/或覆盖涂层的所需厚度，将样品冷却至约室温，并从所述LPCVD封壳取出所述样品。优选将基底抛光以获得镜面光洁度，然后用溶剂或两者机械地或化学地清洁。

5. 发明授权

US5396039A Process for assembling piping or components by TIG welding 失效
标题翻译：通过TIG焊接组装管道或部件的工艺
公开(公告)号：US5396039A
公开(公告)日：1995-03-07
申请号：US156817
申请日：1993-11-24
申请人： Henri Chevrel , Taeko Hattori , Hideki Takagi , Eiichi Ozawa , Jean-Marie Friedt
发明人： Henri Chevrel , Taeko Hattori , Hideki Takagi , Eiichi Ozawa , Jean-Marie Friedt
IPC分类号： B23K9/16 , B23K9/028 , B23K9/167 , B23K9/23 , B23K9/00
CPC分类号： B23K9/0286
摘要： A process to avoid or limit corrosion at the junction of two piping comprising devices welded together, said piping comprising devices being adapted to flow corrosive gases through them, said process comprising the steps of:a) providing a first piping comprising device and connecting it to an inert gas source;b) purging it with an inert gas comprising substantially not more than 10 ppb of an oxidizing gas selected from the group consisting of oxygen, carbon dioxide, water vapor or mixtures thereof, said inert gas flowing from a first opening to a second opening of said piping comprising device;c) providing a second pipe comprising device in flow communication with the first one, while continuing to purge the first piping comprising device;d) welding the two piping comprising devices, said welding being carried out under an inert gas atmosphere; ande) repeating steps c and d if necessary.
摘要翻译：一种避免或限制在包括焊接在一起的装置的两个管道的接合处的腐蚀的过程，所述管道包括适于使腐蚀性气体通过它们的装置，所述方法包括以下步骤：a）提供包括装置的第一管道并将其连接到惰性气源; b）用惰性气体吹扫，所述惰性气体基本上不超过10ppb的选自氧，二氧化碳，水蒸气或其混合物的氧化气体，所述惰性气体从第一开口流到所述管道包括装置; c）提供包括与第一管流动连通的装置的第二管道，同时继续吹扫包括第一管道装置的第一管道; d）焊接包括装置的两个管道，所述焊接在惰性气体气氛下进行; 和e）如果需要，重复步骤c和d。

6. 发明授权

US5298296A Process for the elaboration of powders uniformly coated with ultrafine silicon-base particles using chemical vapor decomposition in the presence of core powders 失效
标题翻译：用于在芯粉存在下使用化学气相分解制备均匀地涂覆有超细硅基颗粒的粉末的方法
公开(公告)号：US5298296A
公开(公告)日：1994-03-29
申请号：US7362
申请日：1993-01-21
申请人： Toshinori Kojima , Masahiko Matsukata , Eiichi Ozawa , Jean-Marie Friedt
发明人： Toshinori Kojima , Masahiko Matsukata , Eiichi Ozawa , Jean-Marie Friedt
IPC分类号： C04B41/87 , B01J2/00 , B01J2/04 , C04B41/50 , C23C16/44 , C23C16/442
CPC分类号： C23C16/4417 , B01J2/006 , B01J2/04 , C04B41/009 , C04B41/5096 , C23C16/442
摘要： A process for coating powders with ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof, entailing:a) introducing a reactant gas into a bed of core powders, thereby uniformly suspending the core powders in the reactant gas,b) entraining the uniformly suspended core powders into a chemical vapor deposition (CVD) reactor,c) selectively forming ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof in the gas phase by homogeneous deposition of the reactant gas, while minimizing core powder growth by CVD at surfaces of suspended core powders, andd) coating the core powders with the ultrafine particles of silicon, silicon oxide, silicon nitride or alloys thereof, by introducing hot inert gas into the uniformly suspended core powders in the reactant gas.
摘要翻译：用硅，氧化硅，氮化硅或其合金的超微粒子涂覆粉末的方法，包括：a）将反应气体引入核心粉末床中，从而将核心粉末均匀地悬浮在反应气体中，b）夹带均匀悬浮的核心粉末进入化学气相沉积（CVD）反应器，c）通过均匀沉积反应气体，在气相中选择性地形成硅，氧化硅，氮化硅或其合金的超细颗粒，同时使通过CVD的芯粉生长最小化并且d）通过将热惰性气体引入到反应气体中的均匀悬浮的核心粉末中，并用硅，氧化硅，氮化硅或其合金的超细颗粒涂覆芯粉。

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