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1. 发明授权

US06516143B2 Fluid heating apparatus 有权
公开(公告)号：US06516143B2
公开(公告)日：2003-02-04
申请号：US09819702
申请日：2001-03-29
申请人： Eiichi Toya , Tomio Konn , Tomohiro Nagata , Sunao Seko , Takanori Saito , Kazutoshi Miura , Harunari Hasegawa , Joji Hoshi , Katsutoshi Ishii
发明人： Eiichi Toya , Tomio Konn , Tomohiro Nagata , Sunao Seko , Takanori Saito , Kazutoshi Miura , Harunari Hasegawa , Joji Hoshi , Katsutoshi Ishii
IPC分类号： H05B302
CPC分类号： H05B3/44 , H05B3/42 , H05B3/46 , H05B2203/022
摘要： The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.

2. 发明授权

US06903030B2 System and method for heat treating semiconductor 有权
标题翻译：半导体热处理系统和方法
公开(公告)号：US06903030B2
公开(公告)日：2005-06-07
申请号：US10477110
申请日：2002-03-13
申请人： Katsutoshi Ishii , Yutaka Takahashi , Harunari Hasegawa
发明人： Katsutoshi Ishii , Yutaka Takahashi , Harunari Hasegawa
IPC分类号： H01L21/31 , C23C16/44 , C30B33/02 , H01L21/00 , H01L21/469
CPC分类号： H01L21/67103 , C23C8/16 , C30B33/02 , H01L21/67109 , H01L21/67248 , H01L21/67253 , Y10S438/909
摘要： A supply system in a heat-treating apparatus for a semiconductor process has a combustor (12), heating unit (13), and gas distributor (14). The combustor (12) has a combustion chamber (59) disposed outside a process chamber (21). The combustor (12) generates water vapor by reaction of hydrogen gas and oxygen gas in the combustion chamber (59), and supplies it to the process chamber (21). The heating unit (13) has a heating chamber (61) disposed outside the process chamber (21). The heating unit (13) selectively heats a gas not passing through the combustion chamber (59) to a temperature not lower than an activating temperature of the gas, and supplies it to the process chamber (21). The gas distributor (14) selectively supplies the hydrogen gas and oxygen gas to the combustion chamber (59), and selectively supplies a reactive gas and inactive gas to the heating chamber (61).
摘要翻译：用于半导体工艺的热处理装置中的供应系统具有燃烧器（12），加热单元（13）和气体分配器（14）。燃烧器（12）具有设置在处理室（21）外部的燃烧室（59）。燃烧器（12）通过在燃烧室（59）中的氢气和氧气的反应产生水蒸气，并将其供给到处理室（21）。加热单元（13）具有设置在处理室（21）外部的加热室（61）。加热单元（13）将不通过燃烧室（59）的气体选择性地加热至不低于气体的活化温度的温度，并将其供给到处理室（21）。气体分配器（14）选择性地将氢气和氧气供应到燃烧室（59），并且选择性地向加热室（61）供应反应气体和惰性气体。

3. 发明授权

US07211295B2 Silicon dioxide film forming method 有权
标题翻译：二氧化硅成膜法
公开(公告)号：US07211295B2
公开(公告)日：2007-05-01
申请号：US10830317
申请日：2004-04-23
申请人： Yutaka Takahashi , Hitoshi Kato , Katsutoshi Ishii , Kazutoshi Miura
发明人： Yutaka Takahashi , Hitoshi Kato , Katsutoshi Ishii , Kazutoshi Miura
IPC分类号： C23C16/40
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02271 , H01L21/3144 , H01L21/31662 , H01L21/3185
摘要： Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.
摘要翻译：本文公开了一种二氧化硅膜形成方法，包括：将反应室加热至预定温度的反应室加热步骤，所述反应室包含待处理物体; 气体预处理步骤，其使处理气体通电以产生水，所述处理气体包括氢气，氯气和氧气; 以及成膜步骤，通过将被通电的处理气体供给到加热的反应室中来形成二氧化硅膜，以氧化待处理物体的硅层。

4. 发明授权

US06863732B2 Heat treatment system and method 失效
标题翻译：热处理系统及方法
公开(公告)号：US06863732B2
公开(公告)日：2005-03-08
申请号：US10342261
申请日：2003-01-15
申请人： Takanobu Asano , Katsutoshi Ishii , Hiroyuki Yamamoto , George Hoshi , Kazutoshi Miura
发明人： Takanobu Asano , Katsutoshi Ishii , Hiroyuki Yamamoto , George Hoshi , Kazutoshi Miura
IPC分类号： C23C16/40 , C23C16/44 , C23C16/452 , C23C16/455 , C30B33/00 , H01L21/00 , C23C16/00 , F27B5/00
CPC分类号： C23C16/45561 , C23C16/401 , C23C16/452 , C23C16/4557 , C30B33/005 , H01L21/67109
摘要： The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.
摘要翻译：本发明一般涉及用于对待处理物体进行热处理的热处理系统和方法。特别地，本发明涉及一种热处理系统，其中待处理物体被运送在反应容器中，该反应容器被减压至预定的真空度并将其内部加热到预定的工艺温度，并且处理气体经由供气通道供给到反应容器中以处理物体。

5. 发明授权

US06884295B2 Method of forming oxynitride film or the like and system for carrying out the same 有权
标题翻译：形成氮氧化物膜等的方法及其实施方法
公开(公告)号：US06884295B2
公开(公告)日：2005-04-26
申请号：US09864374
申请日：2001-05-25
申请人： Katsutoshi Ishii , Kazutoshi Miura
发明人： Katsutoshi Ishii , Kazutoshi Miura
IPC分类号： H01L21/314 , H01L21/316 , H01L21/318 , C23C16/00
CPC分类号： H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02271 , H01L21/3144 , H01L21/31662 , H01L21/3185
摘要： This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.
摘要翻译：本发明是一种氮氧化物膜形成方法，包括：将反应室加热到预定温度的反应室加热步骤，反应室包含待处理物体; 将处理气体加热到能够形成氮氧化物膜的反应温度以上的气体加热工序，由二氧化氮气体构成的工艺气体; 以及通过将加热的处理气体供给到加热处理室中而在被处理物上形成氮氧化物膜的成膜工序。在反应室加热步骤中将反应室加热的温度设定在低于处理气体发生反应的温度的温度。

6. 发明授权

US06540509B2 Heat treatment system and method 有权
标题翻译：热处理系统及方法
公开(公告)号：US06540509B2
公开(公告)日：2003-04-01
申请号：US09867564
申请日：2001-05-31
申请人： Takanobu Asano , Katsutoshi Ishii , Hiroyuki Yamamoto , George Hoshi , Kazutoshi Miura
发明人： Takanobu Asano , Katsutoshi Ishii , Hiroyuki Yamamoto , George Hoshi , Kazutoshi Miura
IPC分类号： F27B500
CPC分类号： C23C16/45561 , C23C16/401 , C23C16/452 , C23C16/4557 , C30B33/005 , H01L21/67109
摘要： The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.
摘要翻译：本发明一般涉及用于对待处理物体进行热处理的热处理系统和方法。特别地，本发明涉及一种热处理系统，其中待处理物体被运送在反应容器中，该反应容器被减压至预定的真空度并将其内部加热到预定的工艺温度，并且处理气体经由供气通道供给到反应容器中以处理物体。

7. 发明授权

US08834817B2 Method for removing metal impurity from quartz component part used in heat processing apparatus of batch type 有权
标题翻译：从分批式热处理装置中使用的石英部件除去金属杂质的方法
公开(公告)号：US08834817B2
公开(公告)日：2014-09-16
申请号：US12706734
申请日：2010-02-17
申请人： Masahisa Watanabe , Katsutoshi Ishii , Tetsuya Shibata
发明人： Masahisa Watanabe , Katsutoshi Ishii , Tetsuya Shibata
IPC分类号： C01F7/00 , C23C16/44
CPC分类号： C23C16/4405 , Y02C20/30 , Y02P70/605
摘要： A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.
摘要翻译：使用分批式热处理装置的方法包括进行从处理容器的石英内表面除去作为金属杂质存在的铝的准备工序，对保持在保持部件上的产品基板进行主热处理过程容器经过准备过程。该准备过程包括：放置多个虚设基板，用于允许金属杂质沉积在其中没有产品基板的处理容器内; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。

8. 外观设计

USD425871S Quartz fin heat retaining tube 失效
公开(公告)号：USD425871S
公开(公告)日：2000-05-30
申请号：US74284
申请日：1997-07-24
申请人： Katsutoshi Ishii
设计人： Katsutoshi Ishii

9. 发明授权

US5221201A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5221201A
公开(公告)日：1993-06-22
申请号：US734784
申请日：1991-07-23
申请人： Kenichi Yamaga , Katsutoshi Ishii , Naotaka Ogino
发明人： Kenichi Yamaga , Katsutoshi Ishii , Naotaka Ogino
IPC分类号： C30B31/10 , F27B17/00
CPC分类号： F27B17/0025 , C30B31/103 , Y10S414/137 , Y10S414/14
摘要： A vertical heat treatment apparatus includes a casing, a vertical heat treatment furnace provided in the casing, a substrate holding unit mounted in the casing for holding substrates to be heat-treated in the vertical heat treatment furnace, a loading/unloading unit having a wafer boat for supporting the substrates, the loading/unloading unit being adapted to put the substrates in and take the same out of the vertical heat treatment furnace, and a transportation robot for moving the substrates between the substrate holding unit and the wafer boat. The vertical heat treatment apparatus further includes a clean air supplying unit for supplying clean air sideways to the wafers supported by the wafer boat when the loading/unloading unit is at an unloading position, a and duct for introducing air from the outside of the apparatus. The clean air supplying unit is provided with an air filter disposed opposed to the wafer boat. Air in a clean room whose pressure is set to be higher than the pressure in the casing is introduced into the clean air supplying unit through the duct.
摘要翻译：立式热处理装置包括壳体，设置在壳体中的立式热处理炉，安装在壳体中用于保持在立式热处理炉中进行热处理的基板的基板保持单元，具有晶片的装载/卸载单元用于支撑基板的装载/卸载单元适于将基板放入立式热处理炉中并将其取出，以及用于在基板保持单元和晶片舟皿之间移动基板的输送机器人。垂直热处理装置还包括清洁空气供给单元，用于当装载/卸载单元处于卸载位置时，向由晶圆舟支撑的晶片横向地供应清洁空气，以及用于从设备的外部引入空气的管道。清洁空气供给单元设置有与晶片舟相对设置的空气过滤器。将其压力设定得高于壳体内的压力的洁净室内的空气通过导管引入清洁空气供给单元。

10. 发明申请

US20090078201A1 VERTICAL PLASMA PROCESSING APPARATUS FOR SEMICONDUCTOR PROCESS 有权
标题翻译：用于半导体工艺的垂直等离子体处理装置
公开(公告)号：US20090078201A1
公开(公告)日：2009-03-26
申请号：US12277344
申请日：2008-11-25
申请人： Hiroyuki Matsuura , Toshiki Takahashi , Jun Sato , Katsuyoshi Aikawa , Katsutoshi Ishii
发明人： Hiroyuki Matsuura , Toshiki Takahashi , Jun Sato , Katsuyoshi Aikawa , Katsutoshi Ishii
IPC分类号： C23C16/505
CPC分类号： C23C16/45578 , C23C16/452 , C23C16/45565 , C23C16/45574
摘要： A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.
摘要翻译：用于半导体工艺的垂直等离子体处理装置包括由具有绝缘内表面并与处理容器一体化的壳体限定的气密辅助室。辅助室包括在垂直方向上在对应于多个目标基板的长度上延伸的等离子体产生区域。具有绝缘表面的隔板位于处理场和等离子体产生之间。隔板包括沿垂直方向设置在与多个目标基板相对应的长度上的气体通道。在通过等离子体产生区域时排出处理气体，然后通过气体通道供给到处理区域。

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