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1. 发明申请

US20070026579A1 DOPED SINGLE CRYSTAL SILICON SILICIDED EFUSE 有权
标题翻译：单晶硅晶硅胶
公开(公告)号：US20070026579A1
公开(公告)日：2007-02-01
申请号：US11161320
申请日：2005-07-29
申请人： Edward Nowak , Jed Rankin , William Tonti , Richard Williams
发明人： Edward Nowak , Jed Rankin , William Tonti , Richard Williams
IPC分类号： H01L21/84
CPC分类号： H01L27/10 , H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An eFuse begins with a single crystal silicon-on-insulator (SOI) structure that has a single crystal silicon layer on a first insulator layer. The single crystal silicon layer is patterned into a strip. Before or after the patterning, the single crystal silicon layer is doped with one or more impurities. At least an upper portion of the single crystal silicon layer is then silicided to form a silicided strip. In one embodiment the entire single crystal silicon strip is silicided to create a silicide strip. Second insulator(s) is/are formed on the silicide strip, so as to isolate the silicided strip from surrounding structures. Before or after forming the second insulators, the method forms electrical contacts through the second insulators to ends of the silicided strip. By utilizing a single crystal silicon strip, any form of semiconductor, such as a diode, conductor, insulator, transistor, etc. can form the underlying portion of the fuse structure. The overlying silicide material allows the fuse to act as a conductor in its unprogrammed state. However, contrary to metal or polysilicon based eFuses which only comprise an insulator in the programmed state, when the inventive eFuse is programmed (and the silicide is moved or broken) the underlying semiconductor structure operates as an active semiconductor device.
摘要翻译： eFuse从在第一绝缘体层上具有单晶硅层的单晶硅绝缘体（SOI）结构开始。将单晶硅层图案化成条带。在构图之前或之后，单晶硅层掺杂有一种或多种杂质。至少单晶硅层的上部然后被硅化以形成硅化带。在一个实施例中，整个单晶硅带被硅化以产生硅化物条。在硅化物条上形成第二绝缘体，从而将硅化物带与周围结构隔离。在形成第二绝缘体之前或之后，该方法通过第二绝缘体形成与硅化带的端部的电接触。通过使用单晶硅条，任何形式的半导体，例如二极管，导体，绝缘体，晶体管等都可以形成熔丝结构的下面部分。上覆的硅化物材料允许熔丝作为未编程状态的导体。然而，与仅编程状态的仅包含绝缘体的金属或多晶硅基eFuse相反，当本发明的eFuse被编程（并且硅化物被移动或断开）时，下面的半导体结构作为有源半导体器件工作。

2. 发明申请

US20070029576A1 PROGRAMMABLE SEMICONDUCTOR DEVICE CONTAINING A VERTICALLY NOTCHED FUSIBLE LINK REGION AND METHODS OF MAKING AND USING SAME 审中-公开
标题翻译：包含垂直可编程可熔连接区域的可编程半导体器件及其制造和使用方法
公开(公告)号：US20070029576A1
公开(公告)日：2007-02-08
申请号：US11161439
申请日：2005-08-03
申请人： Edward Nowak , Jed Rankin , William Tonti
发明人： Edward Nowak , Jed Rankin , William Tonti
IPC分类号： H01L27/10
CPC分类号： H01L27/10 , H01L23/5256 , H01L29/66795 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a programmable semiconductor device, preferably a FinFET or tri-gate structure, that contains a first contact element, a second contact element, and at least one fin-shaped fusible link region coupled between the first and second contact elements. The second contact element is laterally spaced apart from the first contact element, and the fin-shaped fusible link region has a vertically notched section. A programming current flowing through the fin-shaped fusible link region causes either significant resistance increase or formation of an electric discontinuity in the vertically notched section. Alternatively, the vertically notched section may contain a dielectric material, and application of a programming voltage between a gate electrode overlaying the vertically notched section and one of the contact elements breaks down the dielectric material and allows current flow between the gate electrode and the fin-shaped fusible link region.
摘要翻译：本发明涉及一种可编程半导体器件，优选地为FinFET或三栅极结构，其包含第一接触元件，第二接触元件以及耦合在第一和第二接触元件之间的至少一个鳍状可熔连接区域。第二接触元件与第一接触元件横向间隔开，并且鳍状可熔连接区域具有垂直切口部分。流过翅片状易熔连接区域的编程电流导致垂直切口部分中显着的电阻增加或电中断的形成。或者，垂直切口部分可以包含电介质材料，并且在覆盖垂直切口部分的栅极电极和其中一个接触元件之间施加编程电压会破坏电介质材料，并允许电流在栅电极和鳍片间电流之间流动，形易熔连接区域。

3. 发明申请

US20070127172A1 ON DEMAND CIRCUIT FUNCTION EXECUTION EMPLOYING OPTICAL SENSING 失效
标题翻译：使用光电传感器的需求电路功能执行
公开(公告)号：US20070127172A1
公开(公告)日：2007-06-07
申请号：US11275058
申请日：2005-12-06
申请人： Wagdi Abadeer , James Adkisson , Jeffrey Brown , Kiran Chatty , Robert Gauthier , Michael Hauser , Jed Rankin , William Tonti
发明人： Wagdi Abadeer , James Adkisson , Jeffrey Brown , Kiran Chatty , Robert Gauthier , Michael Hauser , Jed Rankin , William Tonti
IPC分类号： H02H9/00
CPC分类号： H01L23/5256 , H01L23/525 , H01L27/14609 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i.e., replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad once the packaged chip is placed in system. No additional pins on the package are necessary.
摘要翻译：公开了通过光谱选择的外部光激活通过芯片嵌入式光电二极管的激活以及相应的结构和电路来执行诸如定影操作之类的电功能的方法。本发明基于将具有特定强度/波长特性的入射光结合到集成电路的附加电路元件，执行维修的实现，即用冗余电路替换故障电路元件以获得和/或可靠性。一旦封装的芯片放置在系统中，也可以将ESD保护装置从输入焊盘断开。不需要额外的引脚。

4. 发明申请

US20050090049A1 High voltage N-LDMOS transistors having shallow trench isolation region 失效
公开(公告)号：US20050090049A1
公开(公告)日：2005-04-28
申请号：US10991936
申请日：2004-11-18
申请人： Wagdi Abadeer , Jeffrey Brown , Robert Gauthier , Jed Rankin , William Tonti
发明人： Wagdi Abadeer , Jeffrey Brown , Robert Gauthier , Jed Rankin , William Tonti
IPC分类号： H01L21/265 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/78
CPC分类号： H01L29/0878 , H01L21/26586 , H01L21/266 , H01L29/0653 , H01L29/086 , H01L29/42368 , H01L29/66689 , H01L29/7816
摘要： A method and structure is disclosed for a transistor having a gate, a channel region below the gate, a source region on one side of the channel region, a drain region on an opposite side of the channel region from the source region, a shallow trench isolation (STI) region in the substrate between the drain region and the channel region, and a drain extension below the STI region. The drain extension is positioned along a bottom of the STI region and along a portion of sides of the STI. Portions of the drain extension along the bottom of the STI may comprise different dopant implants than the portions of the drain extensions along the sides of the STI. Portions of the drain extensions along sides of the STI extend from the bottom of the STI to a position partially up the sides of the STI. The STI region is below a portion of the gate. The drain extension provides a conductive path between the drain region and the channel region around a lower perimeter of the STI. The drain region is positioned further from the gate than the source region.

5. 发明申请

US20060128071A1 Integrated antifuse structure for finfet and cmos devices 有权
标题翻译： Finf集成反熔丝结构和cmos器件
公开(公告)号：US20060128071A1
公开(公告)日：2006-06-15
申请号：US10539333
申请日：2002-12-20
申请人： Jed Rankin , Wagdl Abadeer , Jeffrey Brown , William Tonti
发明人： Jed Rankin , Wagdl Abadeer , Jeffrey Brown , William Tonti
IPC分类号： H01L21/82
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/785
摘要： A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise. A region of semiconducting material (11) is provided overlying an insulator (3) disposed on a substrate (10); an etching process exposes a plurality of corners (111-114) in the semiconducting material. The exposed corners are oxidized to form elongated tips (111t-114t) at the corners; the oxide (31) overlying the tips is removed. An oxide layer (51), such as a gate oxide, is then formed on the semiconducting material and overlying the corners; this layer has a reduced thickness at the corners. A layer of conducting material (60) is formed in contact with the oxide layer (51) at the corners, thereby forming a plurality of possible breakdown paths between the semiconducting material and the layer of conducting material through the oxide layer. Applying a voltage, such as a burn-in voltage, to the structure converts at least one of the breakdown paths to a conducting path (103, 280).
摘要翻译：描述了与半导体器件（例如FINFET或平面CMOS器件）集成的制造和反熔丝结构（100）的方法。设置在设置在基板（10）上的绝缘体（3）上的半导体材料（11）的区域; 蚀刻工艺暴露了半导体材料中的多个拐角（111-114）。露出的角部被氧化，以形成角落处的细长尖端（111t-114t）; 去除顶部上方的氧化物（31）。然后在半导体材料上形成氧化物层（例如栅极氧化物），并覆盖在角部上; 该层在拐角处具有减小的厚度。在角部处形成与氧化物层（51）接触的导电材料层（60），从而通过氧化物层在半导体材料和导电材料层之间形成多个可能的击穿路径。将诸如老化电压的电压施加到结构将至少一个击穿路径转换成导电路径（103,280）。

6. 发明申请

US20070284669A1 METHOD AND STRUCTURE TO PROCESS THICK AND THIN FINS AND VARIABLE FIN TO FIN SPACING 审中-公开
公开(公告)号：US20070284669A1
公开(公告)日：2007-12-13
申请号：US11838934
申请日：2007-08-15
申请人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthier , Jed Rankin , William Tonti
发明人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthier , Jed Rankin , William Tonti
IPC分类号： H01L29/76
CPC分类号： B07C5/344 , G01R31/2831
摘要： Disclosed is an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness and fin-to-fin spacing are controlled by an oxidation process used to form oxide sidewalls on the mandrels, and more particularly, by the processing time and the use of intrinsic, oxidation-enhancing and/or oxidation-inhibiting mandrels. Fin thickness is also controlled by using sidewalls spacers combined with or instead of the oxide sidewalls. Specifically, images of the oxide sidewalls alone, images of sidewall spacers alone, and/or combined images of sidewall spacers and oxide sidewalls are transferred into a semiconductor layer to form the fins. The fins with different thicknesses and variable spacing can be used to form a single multiple-fin FET or, alternatively, various single-fin and/or multiple-fin FETs.

7. 发明申请

US20060220174A1 E-Fuse and anti-E-Fuse device structures and methods 审中-公开
标题翻译：电子熔断器和反电子保险丝器件的结构和方法
公开(公告)号：US20060220174A1
公开(公告)日：2006-10-05
申请号：US11440199
申请日：2006-05-24
申请人： Jeffrey Brown , Robert Gauthier , Jed Rankin , William Tonti
发明人： Jeffrey Brown , Robert Gauthier , Jed Rankin , William Tonti
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： Standard photolithography is used to pattern and fabricate a final polysilicon wafer imaged structure which is smaller than normal allowable photo-lithographic minimum dimensions. Three different methods are provided to produce such sub-minimum dimension structures, a first method uses a photolithographic mask with a sub-minimum space between minimum size pattern features of the mask, a second method uses a photolithographic mask with a sub-minimum widthwise jog or offset between minimum size pattern features of the mask, and a third method is a combination of the first and second methods. Each of the three methods can be used with three different embodiments, a first embodiment is a polysilicon E-Fuse with a sub-minimum width polysilicon fuse line, a second embodiment is a work function altered/programmed self-aligned MOSFET E-Fuse with a sub-minimum width fuse line, and a third embodiment is a polysilicon MOSFET E-Fuse with a sub-minimum width fuse line which is programmed with a low trigger voltage snapback.
摘要翻译：使用标准光刻法来图案化和制造最终的多晶硅晶片成像结构，该结构小于正常允许光刻最小尺寸。提供了三种不同的方法来产生这样的次最小维度结构，第一种方法使用具有掩模的最小尺寸图案特征之间的亚最小空间的光刻掩模，第二种方法使用光刻掩模与次最小宽度方向点动或掩模的最小尺寸图案特征之间的偏移，第三种方法是第一和第二方法的组合。三种方法中的每一种可以与三种不同的实施例一起使用，第一实施例是具有亚最小宽度多晶硅熔丝线的多晶硅E熔丝，第二实施例是工作功能改变/编程的自对准MOSFET E-Fuse，具有亚最小宽度熔丝线，第三实施例是具有低电平触发电压快速编程的亚最小宽度熔丝线的多晶硅MOSFET E-Fuse。

8. 发明申请

US20070170521A1 METHOD AND STRUCTURE TO PROCESS THICK AND THIN FINS AND VARIABLE FIN TO FIN SPACING 有权
公开(公告)号：US20070170521A1
公开(公告)日：2007-07-26
申请号：US11306827
申请日：2006-01-12
申请人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthier , Jed Rankin , William Tonti
发明人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthier , Jed Rankin , William Tonti
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , H01L21/845 , H01L27/1211
摘要： Disclosed is an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness and fin-to-fin spacing are controlled by an oxidation process used to form oxide sidewalls on the mandrels, and more particularly, by the processing time and the use of intrinsic, oxidation-enhancing and/or oxidation-inhibiting mandrels. Fin thickness is also controlled by using sidewalls spacers combined with or instead of the oxide sidewalls. Specifically, images of the oxide sidewalls alone, images of sidewall spacers alone, and/or combined images of sidewall spacers and oxide sidewalls are transferred into a semiconductor layer to form the fins. The fins with different thicknesses and variable spacing can be used to form a single multiple-fin FET or, alternatively, various single-fin and/or multiple-fin FETs.

9. 发明申请

US20070254438A1 DOUBLE GATED TRANSISTOR AND METHOD OF FABRICATION 有权
标题翻译：双栅极晶体管和制造方法
公开(公告)号：US20070254438A1
公开(公告)日：2007-11-01
申请号：US11774663
申请日：2007-07-09
申请人： Andres Bryant , Meikei Ieong , K. Muller , Edward Nowak , David Fried , Jed Rankin
发明人： Andres Bryant , Meikei Ieong , K. Muller , Edward Nowak , David Fried , Jed Rankin
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L21/823842 , H01L27/092 , H01L29/66795 , H01L29/785
摘要： A method for forming a transistor. A semiconductor substrate is provided. The semiconductor substrate is patterned to provide a first body edge. A first gate structure of a first fermi level is provided adjacent the first body edge. The semiconductor substrate is patterned to provide a second body edge. The first and second body edges of the semiconductor substrate define a transistor body. A second gate structure of a second fermi level is provided adjacent the second body edge. A substantially uniform dopant concentration density is formed throughout the transistor body.
摘要翻译：一种形成晶体管的方法。提供半导体衬底。图案化半导体衬底以提供第一本体边缘。在第一身体边缘附近提供第一费米能级的第一门结构。图案化半导体衬底以提供第二本体边缘。半导体衬底的第一和第二主体边缘限定晶体管体。在第二身体边缘附近设置第二费米能级的第二门结构。在整个晶体管本体中形成基本均匀的掺杂剂浓度密度。

10. 发明申请

US20070292996A1 METHOD AND STRUCTURE TO PROCESS THICK AND THIN FINS AND VARIABLE FIN TO FIN SPACING 有权
标题翻译：加工薄膜和薄膜的方法和结构以及可变的熔化到熔融间隙
公开(公告)号：US20070292996A1
公开(公告)日：2007-12-20
申请号：US11846544
申请日：2007-08-29
申请人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthler , Jed Rankin , William Tonti
发明人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthler , Jed Rankin , William Tonti
IPC分类号： H01L21/84
CPC分类号： B07C5/344 , G01R31/2831
摘要： Disclosed is an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness and fin-to-fin spacing are controlled by an oxidation process used to form oxide sidewalls on the mandrels, and more particularly, by the processing time and the use of intrinsic, oxidation-enhancing and/or oxidation-inhibiting mandrels. Fin thickness is also controlled by using sidewalls spacers combined with or instead of the oxide sidewalls. Specifically, images of the oxide sidewalls alone, images of sidewall spacers alone, and/or combined images of sidewall spacers and oxide sidewalls are transferred into a semiconductor layer to form the fins. The fins with different thicknesses and variable spacing can be used to form a single multiple-fin FET or, alternatively, various single-fin and/or multiple-fin FETs.
摘要翻译：公开了一种集成电路，其具有在相同基板上具有不同宽度和可变间隔的多个半导体散热片。形成电路的方法包括使用不同类型的心轴的侧壁图像转印过程。翅片厚度和翅片翅片间距由用于在心轴上形成氧化物侧壁的氧化工艺控制，更具体地，通过处理时间和使用固有的，氧化增强的和/或氧化抑制的心轴来控制。翅片厚度也通过使用与氧化物侧壁结合或代替氧化物侧壁的侧壁间隔来控制。具体地，单独的氧化物侧壁的图像，侧壁间隔物的图像和/或侧壁间隔物和氧化物侧壁的组合图像被转移到半导体层中以形成散热片。可以使用具有不同厚度和可变间隔的散热片来形成单个多鳍FET，或者替代地，各种单鳍和/或多鳍FET。

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