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1. 发明授权

US5593812A Photoresist having increased sensitivity and use thereof 失效
标题翻译：光敏剂具有增加的灵敏度和使用
公开(公告)号：US5593812A
公开(公告)日：1997-01-14
申请号：US389864
申请日：1995-02-17
申请人： Edward D. Babich , Karen E. Petrillo , John P. Simons , David E. Seeger
发明人： Edward D. Babich , Karen E. Petrillo , John P. Simons , David E. Seeger
IPC分类号： G03F7/004 , G03F7/029 , G03F7/033 , G03F7/039 , G03F7/09 , G03F7/30 , H01L21/027 , G03F7/38
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/116 , Y10S430/12 , Y10S430/121 , Y10S430/123 , Y10S430/124 , Y10S430/125
摘要： The sensitivity of a photoresist to actinic light is improved by the addition of certain dyes. The photoresist includes a polymer matrix, a photosensitive acid generator and at least one compound selected from the group consisting of dyes containing at least one heterosulphur atom such as 2,2.sup.1,5.sup.1,2"-terthiophene and its derivatives; thianthrene and its derivatives, and 4,6-diphenylthieno(3,4-d)-1,3-dioxol-2-one-5,5-dioxide; phenylsulfone and its derivatives; and 4,5-diphenyl-1,3-dioxol-2-one; 3,4-bis(acetoxymethyl)furan; chelidonic acid and its derivatives; and 5,7,12,14-pentacenetetrone. Resist images on a substrate are formed from the compositions.
摘要翻译：通过添加某些染料可以改善光致抗蚀剂对光化光的敏感性。光致抗蚀剂包括聚合物基质，光敏酸产生剂和至少一种选自包含至少一个杂硫原子的染料的化合物，例如2,2,1,51,2“ - 三噻吩及其衍生物; 噻吩及其衍生物和4,6-二苯基噻吩并（3,4-d）-1,3-二氧杂环戊烯-2-酮-5,5-二氧化物; 苯砜及其衍生物; 和4,5-二苯基-1,3-二氧杂环戊烯-2-酮; 3,4-二（乙酰氧基甲基）呋喃; 螯合酸及其衍生物; 和5,7,12,14-五硝基四酮。由组合物形成基底上的抗蚀剂图像。

2. 发明授权

US06685853B1 Energy sensitive electrically conductive admixtures, uses thereof, methods of fabrication and structures fabricated therewith 有权
标题翻译：能量敏感的导电掺合物，其用途，制造方法和用其制造的结构
公开(公告)号：US06685853B1
公开(公告)日：2004-02-03
申请号：US09614230
申请日：2000-07-12
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
IPC分类号： H01B112
CPC分类号： H01B1/12 , H01L23/5328 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
摘要翻译：本发明是导电材料和能量敏感材料的混合物，导致导电能量敏感组合物。该结构可用于微电子制造中的光刻，以避免对来自电子束的抗蚀剂充电的影响。该组合物也可用于扫描电子测量和静电消散的应用中。

3. 发明授权

US6132644A Energy sensitive electrically conductive admixtures 失效
标题翻译：能量敏感的导电外加剂
公开(公告)号：US6132644A
公开(公告)日：2000-10-17
申请号：US086238
申请日：1998-05-28
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
IPC分类号： H01B1/12 , H01L23/532 , H01B1/20
CPC分类号： H01B1/12 , H01L23/5328 , H01L2924/0002
摘要： The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
摘要翻译：本发明是导电材料和能量敏感材料的混合物，导致导电能量敏感组合物。该结构可用于微电子制造中的光刻，以避免对来自电子束的抗蚀剂充电的影响。该组合物也可用于扫描电子测量和静电消散的应用中。

4. 发明授权

US4752668A System for laser removal of excess material from a semiconductor wafer 失效
标题翻译：用于从半导体晶片激光去除多余材料的系统
公开(公告)号：US4752668A
公开(公告)日：1988-06-21
申请号：US856303
申请日：1986-04-28
申请人： Michael G. Rosenfield , David E. Seeger
发明人： Michael G. Rosenfield , David E. Seeger
IPC分类号： H01L21/027 , B23K26/14 , G03F1/72 , G03F7/42 , H01L21/30 , B23K26/16
CPC分类号： G03F7/42 , B23K26/1462 , G03F1/72
摘要： A system for removing excess material from a semiconductor wafer employs an excimer laser for ablative photocomposition. A wafer is positioned on an X-Y stage that is computer controlled to position the wafer at points where the laser may be focused to remove excess material whether over alignment marks or identified contamination. The laser passes through a vacuum chamber which by generating an inward laminar flow constrains any particulate contamination resulting from the ablative photodecomposition from spreading. This material is removed by the vacuum system.
摘要翻译：用于从半导体晶片去除多余材料的系统采用准分子激光器进行烧蚀光电组合。晶片定位在计算机控制的X-Y平台上，以将晶片定位在可以聚焦激光器的点处，以去除多余的材料，无论是对准标记还是识别出的污染物。激光穿过真空室，其通过产生向内的层流限制由烧蚀光分解产生的任何颗粒污染物的扩散。该材料被真空系统除去。

5. 发明授权

US07888786B2 Electronic module comprising memory and integrated circuit processor chips formed on a microchannel cooling device 有权
标题翻译：电子模块包括形成在微通道冷却装置上的存储器和集成电路处理器芯片
公开(公告)号：US07888786B2
公开(公告)日：2011-02-15
申请号：US11735155
申请日：2007-04-13
申请人： Paul S. Andry , Evan G. Colgan , Lawrence S. Mok , Chirag S. Patel , David E. Seeger
发明人： Paul S. Andry , Evan G. Colgan , Lawrence S. Mok , Chirag S. Patel , David E. Seeger
IPC分类号： H01L23/473 , H01L23/52
CPC分类号： H01L23/473 , H01L25/0657 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2225/06517 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/15311 , H01L2224/0401
摘要： Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.
摘要翻译：提供了用于将微通道冷却模块集成在包括多个高性能IC芯片的高密度电子模块（例如，芯片封装，系统级封装模块等）中的装置和方法。电子模块被设计成使得高性能（大功率）IC芯片被布置成靠近集成冷却模块（或冷却板）以有效地提取热量。此外，包括具有多个芯片面的大表面积硅载体的电子模块被设计成使得集成的硅冷却模块刚性地结合到这种芯片的背面以增加硅载体的结构完整性。

6. 发明授权

US5569501A Diamond-like carbon films from a hydrocarbon helium plasma 失效
标题翻译：来自烃氦等离子体的类金刚石碳膜
公开(公告)号：US5569501A
公开(公告)日：1996-10-29
申请号：US483685
申请日：1995-06-07
申请人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
发明人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
IPC分类号： G03F1/08 , C01B31/06 , C08J7/06 , C23C8/26 , C23C8/50 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04 , G02B1/10 , G11B5/255 , H01L21/31 , H01L21/314 , B05D3/06 , H05H1/24
CPC分类号： C23C16/26 , G02B1/105 , G11B5/255 , Y10S427/104 , Y10S427/106 , Y10T428/30
摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.
摘要翻译：本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。更具体地说，本发明的类金刚石碳膜通过采用以氦作为等离子体气体大量稀释的乙炔沉积在基板上。使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，因此使得它们对于各种各样的应用是非常需要的。

7. 发明授权

US5264328A Resist development endpoint detection for X-ray lithography 失效
标题翻译：抵抗X射线光刻的发展端点检测
公开(公告)号：US5264328A
公开(公告)日：1993-11-23
申请号：US874286
申请日：1992-04-24
申请人： Ronald A. DellaGuardia , John L. Mauer, IV , David E. Seeger
发明人： Ronald A. DellaGuardia , John L. Mauer, IV , David E. Seeger
IPC分类号： G03F7/26 , G03F7/30 , H01L21/027 , H01L21/30 , H01L21/66 , G03C5/02
CPC分类号： G03F7/30 , Y10S430/168
摘要： The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.
摘要翻译：本发明提供了一种用于确定X射线光刻工艺中的显影终点的方法。通过在显影步骤期间通过显微镜在视觉上观察抗蚀剂测试场图案来确定端点。在开发期间，形成变化的测试场模式，因为测试场位置各自同时暴露于不同的辐射剂量。当辐射通过包含多个不同尺寸的辐射衰减器的掩模时，产生这些不同的剂量。当改变的测试场模式匹配与期望的开发端点相关联的已知模式时，工件从显影步骤中移除。

8. 发明授权

US07948077B2 Integrated circuit chip module with microchannel cooling device having specific fluid channel arrangement 有权
标题翻译：具有微通道冷却装置的集成电路芯片模块具有特定的流体通道布置
公开(公告)号：US07948077B2
公开(公告)日：2011-05-24
申请号：US12134883
申请日：2008-06-06
申请人： Paul S. Andry , Evan G. Colgan , Lawrence S. Mok , Chirag S. Patel , David E. Seeger
发明人： Paul S. Andry , Evan G. Colgan , Lawrence S. Mok , Chirag S. Patel , David E. Seeger
IPC分类号： H01L23/473 , H01L23/52
CPC分类号： H01L23/473 , H01L25/0657 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2225/06517 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/15311 , H01L2224/0401
摘要： Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.
摘要翻译：提供了用于将微通道冷却模块集成在包括多个高性能IC芯片的高密度电子模块（例如，芯片封装，系统级封装模块等）中的装置和方法。电子模块被设计成使得高性能（大功率）IC芯片被布置成靠近集成冷却模块（或冷却板）以有效地提取热量。此外，包括具有多个芯片面的大表面积硅载体的电子模块被设计成使得集成的硅冷却模块刚性地结合到这种芯片的背面以增加硅载体的结构完整性。

9. 发明授权

US07230334B2 Semiconductor integrated circuit chip packages having integrated microchannel cooling modules 有权
标题翻译：具有集成微通道冷却模块的半导体集成电路芯片封装
公开(公告)号：US07230334B2
公开(公告)日：2007-06-12
申请号：US10987985
申请日：2004-11-12
申请人： Paul S. Andry , Evan G. Colgan , Lawrence S. Mok , Chirag S. Patel , David E. Seeger
发明人： Paul S. Andry , Evan G. Colgan , Lawrence S. Mok , Chirag S. Patel , David E. Seeger
IPC分类号： H01L23/46
CPC分类号： H01L23/473 , H01L25/0657 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2225/06517 , H01L2225/06589 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/15311 , H01L2224/0401
摘要： Apparatus and methods are provided for integrating microchannel cooling modules within high-density electronic modules (e.g., chip packages, system-on-a-package modules, etc.,) comprising multiple high-performance IC chips. Electronic modules are designed such that high-performance (high power) IC chips are disposed in close proximity to the integrated cooling module (or cooling plate) for effective heat extraction. Moreover, electronic modules which comprise large surface area silicon carriers with multiple chips face mounted thereon are designed such that integrated silicon cooling modules are rigidly bonded to the back surfaces of such chips to increase the structural integrity of the silicon carriers.
摘要翻译：提供了用于将微通道冷却模块集成在包括多个高性能IC芯片的高密度电子模块（例如，芯片封装，系统级封装模块等）中的装置和方法。电子模块被设计成使得高性能（大功率）IC芯片被布置成靠近集成冷却模块（或冷却板）以有效地提取热量。此外，包括具有多个芯片面的大表面积硅载体的电子模块被设计成使得集成的硅冷却模块刚性地结合到这种芯片的背面以增加硅载体的结构完整性。

10. 发明授权

US06344305B1 Radiation sensitive silicon-containing resists 失效
标题翻译：辐射敏感含硅抗蚀剂
公开(公告)号：US06344305B1
公开(公告)日：2002-02-05
申请号：US09654350
申请日：2000-09-01
申请人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
发明人： Qinghuang Lin , Ahmad D. Katnani , Douglas Charles LaTulipe, Jr. , David E. Seeger , William Ross Brunsvold , Ali Afzali-Ardakani
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0757
摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.
摘要翻译：提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物。一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线，光束和离子束照射。

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