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1. 发明授权

US07843039B2 Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit 有权
标题翻译：应力改进的器件结构，制造这种应力改进的器件结构的方法以及集成电路的设计结构
公开(公告)号：US07843039B2
公开(公告)日：2010-11-30
申请号：US12030917
申请日：2008-02-14
申请人： Edward C. Cooney, III , Mark Dupuis , William J. Murphy , Steven S. Williams
发明人： Edward C. Cooney, III , Mark Dupuis , William J. Murphy , Steven S. Williams
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/732 , H01L21/76224 , H01L21/76843 , H01L21/8222 , H01L21/8228 , H01L27/0825 , H01L27/0826 , H01L29/0649 , H01L29/456
摘要： Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit. An electrical characteristic of semiconductor devices formed on a common substrate, such as the current gains of bipolar junction transistors, may be altered by modifying stresses in structures indirectly on or over, or otherwise indirectly coupled with, the semiconductor devices. The structures, which may be liners for contacts in a contact level of an interconnect, are physically spaced away from, and not in direct physical contact with, the respective semiconductor devices because at least one additional intervening material or structure is situated between the stress-imparting structures and the stress-modified devices. The intervening materials or structures, such as contacts extending through an insulating layer of a local interconnect level between the contact level and the semiconductor devices, provide paths for the transfer of stress from the stress-imparting structures to the stress-modified semiconductor devices.
摘要翻译：应力改进的器件结构，制造这种应力改进的器件结构的方法以及集成电路的设计结构。形成在公共衬底上的半导体器件的电特性，例如双极结晶体管的电流增益，可以通过间接地或间接地与半导体器件耦合的结构中的应力来改变。在互连的接触电平中可以为触点的衬垫的结构物理上与相应的半导体器件隔开距离并且不与其直接物理接触，因为至少一个附加的介入材料或结构位于应力 - 赋予结构和应力改进的装置。中间的材料或结构，例如延伸穿过接触层和半导体器件之间的局部互连层的绝缘层的触点，提供了将应力从应力赋予结构转移到应力改性半导体器件的路径。

2. 发明申请

US20090206449A1 STRESS-MODIFIED DEVICE STRUCTURES, METHODS OF FABRICATING SUCH STRESS-MODIFIED DEVICE STRUCTURES, AND DESIGN STRUCTURES FOR AN INTEGRATED CIRCUIT 有权
标题翻译：应变修正装置结构，制造这种应变修正装置结构的方法，以及集成电路的设计结构
公开(公告)号：US20090206449A1
公开(公告)日：2009-08-20
申请号：US12030917
申请日：2008-02-14
申请人： Edward C. Cooney III , Mark Dupuis , William J. Murphy , Steven S. Williams
发明人： Edward C. Cooney III , Mark Dupuis , William J. Murphy , Steven S. Williams
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/732 , H01L21/76224 , H01L21/76843 , H01L21/8222 , H01L21/8228 , H01L27/0825 , H01L27/0826 , H01L29/0649 , H01L29/456
摘要： Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit. An electrical characteristic of semiconductor devices formed on a common substrate, such as the current gains of bipolar junction transistors, may be altered by modifying stresses in structures indirectly on or over, or otherwise indirectly coupled with, the semiconductor devices. The structures, which may be liners for contacts in a contact level of an interconnect, are physically spaced away from, and not in direct physical contact with, the respective semiconductor devices because at least one additional intervening material or structure is situated between the stress-imparting structures and the stress-modified devices. The intervening materials or structures, such as contacts extending through an insulating layer of a local interconnect level between the contact level and the semiconductor devices, provide paths for the transfer of stress from the stress-imparting structures to the stress-modified semiconductor devices.
摘要翻译：应力改进的器件结构，制造这种应力改进的器件结构的方法以及集成电路的设计结构。形成在公共衬底上的半导体器件的电特性，例如双极结晶体管的电流增益，可以通过间接地或间接地与半导体器件耦合的结构中的应力来改变。在互连的接触电平中可以为触点的衬垫的结构物理上与相应的半导体器件隔开距离并且不与其直接物理接触，因为至少一个附加的介入材料或结构位于应力 - 赋予结构和应力改进的装置。中间的材料或结构，例如延伸穿过接触层和半导体器件之间的局部互连层的绝缘层的触点，提供用于将应力从应力赋予结构转移到应力改变的半导体器件的路径。

3. 发明申请

US20070028510A1 Densification System 有权
标题翻译：致密系统
公开(公告)号：US20070028510A1
公开(公告)日：2007-02-08
申请号：US11462744
申请日：2006-08-07
申请人： Mark Dupuis
发明人： Mark Dupuis
IPC分类号： C10L5/40
CPC分类号： C10L5/42 , C10L5/44 , C10L5/46 , C10L5/48 , Y02E50/10 , Y02E50/30 , Y10S100/903
摘要： A densification system for shredding and densifying specification raw materials for use as an alternative fuel source. The densified specification raw materials formed by the inventive system are readily transportable to a fuel processing site where they may be used to generate energy.
摘要翻译：用于粉碎和致密化的规范原料用作替代燃料源的致密化系统。由本发明系统形成的致密化规格原材料容易运输到燃料加工部位，在那里它们可用于产生能量。

4. 发明申请

US20050271374A1 Dedensification and Delivery Unit 有权
标题翻译：推销和交付单位
公开(公告)号：US20050271374A1
公开(公告)日：2005-12-08
申请号：US11160061
申请日：2005-06-07
申请人： Mark Dupuis
发明人： Mark Dupuis
IPC分类号： G03B13/00
CPC分类号： G03B13/00
摘要： A dedensification and delivery unit for the conversion of an alternative fuel source into fuel, comprising: a dedensification area for separating a densified alternative fuel source into its component parts to form a dedensified alternative fuel source; a compression area for holding the dedensified alternative fuel source; a refining area for further shaping a size of the dedensified alternative fuel source to form a refined alternative fuel source; and a delivery area for delivering the refined alternative fuel source into a burner.
摘要翻译：一种用于将替代燃料源转化为燃料的推动和运送单元，包括：用于将致密化的替代燃料源分离成其组成部分以形成被推荐的替代燃料源的净化区域; 一个压缩区，用于容纳被推荐的替代燃料源; 一个精炼区域，用于进一步塑造一定数量的被推荐的替代燃料源，以形成精炼的替代燃料源; 以及用于将精炼的替代燃料源输送到燃烧器中的输送区域。

5. 发明申请

US20070029419A1 Method for Gathering, Segregating, and Processing Specification Raw Materials 审中-公开
标题翻译：收集，分离和处理规格原材料的方法
公开(公告)号：US20070029419A1
公开(公告)日：2007-02-08
申请号：US11461854
申请日：2006-08-02
申请人： Mark Dupuis
发明人： Mark Dupuis
IPC分类号： B02C17/00
CPC分类号： C10G1/00 , C10L5/363 , C10L5/46 , G06Q50/04 , Y02E50/10 , Y02E50/30 , Y02P90/30
摘要： A method for conducting business comprising: segregating refuse materials into types, wherein one of the types comprises specification raw materials; processing the specification raw materials into a fuel source; and utilizing the fuel source to create power.
摘要翻译：一种开展业务的方法，包括：将垃圾分类为类型，其中一种类型包括规格原材料; 将规格原料加工成燃料源; 并利用燃料源来产生动力。

6. 发明申请

US20060289959A1 YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH 有权
标题翻译：硅锗外延生长中的YIELD改进
公开(公告)号：US20060289959A1
公开(公告)日：2006-12-28
申请号：US11468030
申请日：2006-08-29
申请人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
发明人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
IPC分类号： H01L31/00
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译：一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。半导体结构的制造以单晶硅（Si）层开始。然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长，（ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。

7. 发明授权

US5046758A Multi-cutter self-piercing cover assembly for airbag 失效
标题翻译：用于安全气囊的多切割器自穿孔盖组件
公开(公告)号：US5046758A
公开(公告)日：1991-09-10
申请号：US611978
申请日：1990-11-13
申请人： Scott Rafferty , Bruce Batchelder , Mark Dupuis
发明人： Scott Rafferty , Bruce Batchelder , Mark Dupuis
IPC分类号： B60R21/2165
CPC分类号： B60R21/2165 , B60R2021/21652
摘要： A cover assembly for an air cushion restraint has a smooth cover with a layer of foam connected between the cover and a load bearing insert for covering a housing for an airbag and a gas generator which generates an inflatant for the airbag for deploying the airbag; three cutters are pivotally connected to the insert member to cut an insert cover member from the insert and to pierce the smooth outer cover member during inflation of the airbag so as to form a self-piercing cover assembly which will be cut to form a three sided opening through the cover assembly through which the airbag is deployed; the cutters are actuated by an insert cover member support system which will operate the cutters as the airbag is inflated to cause cutting edges on the cutters to pierce the smooth outer cover member. The cutters are recessed within the cover assembly to avoid incidental contact with the cutting edges prior to deployment. The cutters are configured such that on deployment the cutting edges have only a limited entry into the passenger compartment of a vehicle. The cutters are arranged to self-retract following airbag deployment to shield the cutting edges from passenger contact during secondary impacts.
摘要翻译：一种用于气垫限制器的盖组件具有光滑的盖，其具有连接在盖和用于覆盖用于气囊的壳体的承载插入件之间的泡沫层，以及产生用于展开气囊的气囊膨胀剂的气体发生器; 三个切割器枢转地连接到插入构件以从插入件切割插入物盖构件并且在气囊充气期间刺穿光滑的外盖构件，以便形成自动穿孔盖组件，其将被切割以形成三面通过安装气囊展开的盖组件打开; 切割器由插入盖构件支撑系统致动，该插入盖构件支撑系统将在气囊膨胀时操作切割器，以使切割器上的切割刃刺穿光滑的外盖构件。切割器凹入盖组件内以避免在展开之前与切割边缘的偶然接触。切割器被构造成使得在展开时切割刃仅限于进入车辆的乘客舱。切割器被布置成在安全气囊展开之后自动缩回以在二次冲击期间屏蔽切割边缘与乘客接触。

8. 发明申请

US20070029409A1 Nozzle and Method of Use 审中-公开
标题翻译：喷嘴和使用方法
公开(公告)号：US20070029409A1
公开(公告)日：2007-02-08
申请号：US11461645
申请日：2006-08-01
申请人： Mark Dupuis
发明人： Mark Dupuis
IPC分类号： B05B1/34
CPC分类号： B05B1/341 , F23D1/02 , F23D2201/10 , F23D2900/01001
摘要： A nozzle for controlling the spray pattern and the distribution of particles into a combustion chamber. The nozzle comprises a receiver in communication with a vortex chamber, which in turn is in communication with a discharge hood. The vortex chamber and the discharge hood are designed to reduce the air pressure within the nozzle, and to thereby decrease the velocity at which particles move through the nozzle. The nozzle further comprises a plurality of blades disposed on the vortex chamber which serve to control the spray pattern of the particles. The nozzle further optionally comprises a plurality of deflectors located on the discharge hood which further controls the spray pattern of the particles.
摘要翻译：用于控制喷射图案和颗粒分布到燃烧室中的喷嘴。喷嘴包括与涡流室连通的接收器，涡流室又与排气罩连通。涡流室和排气罩被设计成减小喷嘴内的空气压力，从而降低颗粒通过喷嘴移动的速度。喷嘴还包括设置在涡流室上的多个叶片，其用于控制颗粒的喷雾图案。喷嘴还可选地包括位于排气罩上的多个偏转器，其进一步控制颗粒的喷雾图案。

9. 发明申请

US20050260826A1 YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH 失效
标题翻译：硅锗外延生长中的YIELD改进
公开(公告)号：US20050260826A1
公开(公告)日：2005-11-24
申请号：US10709644
申请日：2004-05-19
申请人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
发明人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
IPC分类号： H01L21/20 , H01L21/205 , H01L29/04 , H01L29/10 , H01L29/12 , H01L31/036
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译：一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。半导体结构的制造以单晶硅（Si）层开始。然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长，（ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。

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